Optically bistable photodiode device with voltage control circuitry to change photodiode light absorption

{
  "publication_number": "US4782223A",
  "country": "US",
  "kind": "A",
  "title": "Optically bistable photodiode device with voltage control circuitry to change photodiode light absorption",
  "abstract": "An improved optically bistable photodiode device comprises a photodiode in which the absorption of light is changed in accordance with a voltage to be applied thereacross, a circuit for amplifying photocurrent flowing through the photodiode, and a bias circuit for controlling the voltage to be applied across the photodiode wherein the incident light supplied to the photodiode is chosen to have a wavelength at which a resonance is produced in an exciton absorption or bandedge absorption where an electric field applied across a multiple quantum well is low so that a optically bistable operation is performed with a high speed response and low consuming power.",
  "claims": [
    "1. An optically bistable photodiode device comprising, a photodiode in which the absorption of light is changed in accordance with a voltage to be applied thereacross, a circuit for detecting and amplifying photocurrent flowing through said photodiode, and a circuit for controlling said voltage to be applied across said photodiode in accordance with output of said circuit for detecting and amplifying.",
    "2. An optically bistable photodiode device according to claim 1, further comprising a common substrate on which said photodiode, said circuit for detecting and amplifying, and said circuit for controlling are provided.",
    "3. An optically bistable photodiode device according to claim 1, wherein said photodiode includes a multiple quantum well, and p and n-cladding layers provided on the respective surfaces of said multiple quantum well.",
    "4. An optically bistable photodiode device according to claim 2, wherein said common substrate is of a semi-insulating substrate of GaAs, and said circuit for detecting and amplifying includes a resistor and a transistor, said resistor being connected to the p-electrode of said photodiode and gate electrode of said transistor, said transistor being connected at its collector to said circuit for controlling, and said circuit for controlling being connected to the n-electrode of said photodiode.",
    "5. An optically bistable photodiode device according to claim 2, wherein said common substrate is of a semi-insulating substrate of InP, and said circuit for detecting and amplifying includes a resistor and a pair of transistors, said resistor being connected to the p-electrode of said photodiode and gate electrode of one of said transistors, another of said transistor being connected at its emitter to the emitter of said one of said transistors and being connected at its collector to said circuit for controlling, and said circuit for controlling being connected to the n-electrode of said photodiode."
  ],
  "cpc": [
    "G02F 3/028",
    "B82Y 20/00",
    "G02F 1/017"
  ],
  "assignees": [
    "NEC CORP"
  ],
  "filing_date": "1987-09-21",
  "publication_date": "1988-11-01",
  "grant_date": "1988-11-01",
  "priority_date": "1986-09-19",
  "application_number": "US-9881187-A",
  "family_id": "16768126",
  "citations": [
    "US3952265A",
    "US4565924A",
    "US4588896A"
  ]
}