Fabrication of supported polycrystalline abrasive compacts

{
  "publication_number": "US4944772A",
  "country": "US",
  "kind": "A",
  "title": "Fabrication of supported polycrystalline abrasive compacts",
  "abstract": "Disclosed is a process for fabricating a supported polycrystalline diamond or CBN bi-layer compact which comprises forming a sintered polycrystalline or CBN compact which preferably is a thermally-stable compact. A cemented carbide support is separately formed. The compact and the support then are mated with a layer of diamond or CBN crystals having the largest dimension of between about 30 and 500 micrometers interposed therebetween. A source of catalyst/sintering aid material is provided in association with the layer of interposed crystals. The entire assembly then is subjected to HP/HT conditions and for a time adequate for converting the diamond or CBN crystals into a polycrystalline diamond or CBN layer and for producing the bi-layer supported compact of the present invention.",
  "claims": [
    "1. A process for fabricating a supported polycrystalline diamond or CBN bi-layer compact which comprises: (a) forming a sintered polycrystalline diamond or CBN compact having a surface; (b) separately forming a cemented carbide support having a support surface; (c) mating said compact and said support at their respective surfaces with a layer of diamond or CBN crystals having a largest dimension of between about 30 and 500 micrometers interposed between said surfaces; (d) providing a source of catalyst/sintering aid material in association with said layer of crystals; (e) subjecting said mated compact and support to HP/HT conditions and for a time adequate for converting said diamond or CBN crystals into a polycrystalline diamond or CBN layer and for providing a support polycrystalline bi-layer compact comprising at least two polycrystalline layers.",
    "2. The process of claim 1 wherein said sintered compact having a surface comprises a thermally-stable compact.",
    "3. The process of claim 1 wherein said catalyst/sintering aid material is selected from the group consisting of cobalt, nickel, iron, ruthenium, rhodium, palladium, platinum, chromium, manganese, tantalum, osmium, iridium, alloys thereof, and mixtures thereof.",
    "4. The process of claim 1 wherein said layer interposed between said surfaces comprises diamond crystals.",
    "5. The process of claim 1 wherein said cemented carbide support is selected from the group consisting of cemented tungsten carbide, titanium carbide, tungsten-molybdenum carbide, and tantalum carbide, wherein the metal bond material for the carbide is selected from the group consisting of cobalt, nickel, iron, and mixtures thereof, an elemental metal which forms a stable nitride or boride, and a metal alloy which forms a stable nitride or boride.",
    "6. The process of claim 1 wherein said HP/HT conditions comprise a temperature ranging from between about 1000° and 2000° C. and a pressure in excess of 40 kbars.",
    "7. The process of claim 1 wherein said catalyst/sintering aid material source is in admixture with said layer of crystals.",
    "8. The process of claim 1 wherein said catalyst/sintering aid material source is placed adjacent said layer of crystals.",
    "9. The process of claim 1 wherein said compact having a surface comprises a direct converted CBN compact.",
    "10. The process of claim 1 wherein said compact having a surface is a thermally-stable compact or direct converted CBN compact; said catalyst/sintering aid material is selected from the group consisting of cobalt, nickel, and iron; said cemented carbide support is selected from the group consisting of cemented tungsten carbide, titanium carbide, tungsten-molybdenum carbide, and tantalum carbide, wherein the metal bond comprises cobalt; and said HP/HT conditions comprise a temperature ranging from between about 1000° and 1500° C. and a pressure of between about 40 and 60 kbars.",
    "11. The process of claim 1 wherein said cemented carbide support comprises an annular cemented carbide support and said sintered polycrystalline diamond or CBN compact having a surface is interposed therewith.",
    "12. The process of claim 1 wherein said cemented carbide support is cylindrical and said sintered polycrystalline diamond or CBN compact having a surface is cylindrical."
  ],
  "cpc": [
    "B24D 3/06",
    "B01J 2203/062",
    "B01J 2203/0645",
    "B01J 2203/0655",
    "B01J 2203/066",
    "B01J 2203/0685",
    "B01J 3/062",
    "B22F 7/06",
    "B23B 27/148",
    "B24D 3/10",
    "C01B 32/25",
    "C04B 2235/6567",
    "C04B 2235/786",
    "C04B 2237/32",
    "C04B 2237/36",
    "C04B 2237/361",
    "C04B 2237/363",
    "C04B 2237/385",
    "C04B 2237/405",
    "C04B 2237/408",
    "C04B 2237/525",
    "C04B 35/5831",
    "C04B 37/001"
  ],
  "assignees": [
    "GEN ELECTRIC"
  ],
  "filing_date": "1988-11-30",
  "publication_date": "1990-07-31",
  "grant_date": "1990-07-31",
  "priority_date": "1988-11-30",
  "application_number": "US-27787488-A",
  "family_id": "23062735",
  "citations": [
    "US3141746A",
    "US3407445A",
    "US3743489A",
    "US3745623A",
    "US3767371A",
    "US4188194A",
    "US4224380A",
    "US4673414A"
  ]
}