MLchartDataset catalogue

Patent · US5271749A · A · US

Synthesis of polycrystalline cubic boron nitride

(11) Publication number
US5271749A
(21) Application number
07/970,822
(22) Filing date
1992-11-03
(30) Priority date
1992-11-03
(43) Publication date
1993-12-21
(45) Date of grant
1993-12-21
(51) IPC
B24D 3/06; C04B 35/5831; C08J 5/14; C22C 26/00; C22C 29/16
(52) CPC
  • C22C Alloys: 29/16, 2026/005, 26/00
  • B22F Working metallic powder; manufacture of articles from metallic powder; making metallic powder; apparatus or devices specially adapted for metallic powder: 2998/00
  • B24D Tools for grinding, buffing or sharpening: 3/06
  • C04B Lime, magnesia; slag; cements; compositions thereof, e.g. mortars, concrete or like building materials; artificial stone {}; ceramics; refractories; treatment of natural stone: 35/5831
(73) Assignee
Smith International Inc
(72) Inventors
Ghanshyam Rai; Xian Yao
(54) Title
Synthesis of polycrystalline cubic boron nitride
(57) Abstract

A sintered polycrystalline compact of cubic boron nitride is made by forming a mixture of about 45 to 65 percent by weight cubic boron nitride (cBN), from about 30 to 45 percent by weight hexagonal boron nitride (hBN), and from about 2 to 7 percent by weight an aluminum containing material, preferably aluminum nitride, and cobalt aluminide having a melting temperature lower than the melting temperature of cobalt phase. The mixture of cBN crystals, hBN and adjuvant materials is compacted into preforms and subjected to heat treatment in a non-oxidizing atmosphere. The preforms are placed onto a cemented tungsten carbide substrate containing cobalt and subjected to elevated pressure and temperature conditions at which the boron nitride is thermodynamically stable. The elevated pressure and temperature conditions are maintained for a time sufficient to permit the infiltration of a cobalt phase into the cBN matrix and sinter the compact. Typically, the cobalt phase is infiltrated from a tungsten carbide substrate cemented with cobalt phase. The compact is characterized by substantial intercrystalline cBN to cBN bonding, and has superior abrasive wear resistance, chemical resistance, impact resistance, thermal conductivity and stability. Further, the technique produces a sintered cBN compact that can be machined more efficiently by EDM.

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Claims (25)

  1. A method for forming a sintered polycrystalline cubic boron nitride compact comprising the steps of: mixing cubic boron nitride crystals, hexagonal boron nitride, cobalt aluminide having a melting point lower than the melting temperature of cobalt, and an aluminum bearing material selected from the group consisting of aluminum nitride, aluminum and aluminum diboride, the mixture comprising at least 30 percent by weight hexagonal boron nitride to facilitate compressing the mixture into a solid preform; and subjecting the mixture in the presence of a cobalt phase to elevated temperature and pressure conditions where cubic boron nitride is thermodynamically stable.
  2. A method as recited in claim 1 wherein the ratio of cubic boron nitride to hexagonal boron nitride is about 2:1.
  3. A method as recited in claim 1 wherein the mixture contains in the range of from 45 to 65 percent by weight cubic boron nitride.
  4. A method as recited in claim 1 wherein the mixture contains in the range of from 30 to 45 percent by weight hexagonal boron nitride.
  5. A method as recited in claim 1 wherein the mixture contains in the range of from 1 to 7 percent by weight aluminum nitride.
  6. A method as recited in claim 1 wherein the mixture contains in the range of from 1 to 3 percent by weight cobalt aluminide.
  7. A method as recited in claim 1 comprising the steps of compressing the mixture into a preform, and placing the preform on a substrate of tungsten carbide cemented with cobalt.
  8. A method as recited in claim 1 comprising the initial step of subjecting the mixture to elevated temperature to an environment of hydrogen, ammonia or vacuum at a temperature in the range of from 600° to 950° C.
  9. A method as recited in claim 1 comprising adding to the mixture a material selected from a group comprising carbide, nitride, or carbonitride of a group IVb, Vb and VIb transition metal from the periodic table.
  10. A method as recited in claim 9 comprising adding titanium carbonitride up to about 40 percent by weight of the mixture.
  11. A method as recited in claim 1 comprising the step of placing the mixture on a substrate of tungsten carbide cemented with cobalt for infiltrating cobalt phase into the mixture during the step of subjecting the mixture to elevated temperature and pressure.
  12. A method as recited in claim 1 wherein the cobalt aluminide comprises Co 2 Al 9.
  13. A sintered polycrystalline compact made by a method as recited in any one of claims 1, 2, 3, 4, 5, 6, 7, 8, 10, 11 or 12.
  14. A method for preparing a sintered polycrystalline compact with substantial intercrystalline bonding of high pressure boron nitride which comprises the steps of: forming a mixture comprising high pressure boron nitride with an amount of low pressure boron nitride, an aluminum containing adjuvant material, and cobalt aluminide having a melting temperature lower than the melting temperature of cobalt phase; subjecting the mixture to elevated temperature in a non-oxidizing environment sufficient to remove boron oxide; placing the mixture onto a substrate comprising tungsten carbide cemented with cobalt; subjecting the mixture to elevated temperature and pressure conditions sufficient to melt cobalt phase in the substrate, and at which conditions high pressure boron is thermodynamically stable; and maintaining the elevated conditions for a time sufficient to allow for substantial intercrystalline bonding of cubic boron nitride to thereby sinter the compact.
  15. A method as recited in claim 14 wherein the mixture contains in the range of from 1 to 3 percent by weight cobalt aluminide.
  16. A method as recited in claim 15 wherein the mixture contains in the range of from 45 to 65 percent by weight cubic boron nitride.
  17. A method as recited in claim 16 wherein the mixture contains in the range of from 30 to 45 percent by weight hexagonal boron nitride.
  18. A method as recited in claim 17 wherein the mixture contains in the range of from 1 to 7 percent by weight aluminum nitride.
  19. A method as recited in claim 15 wherein the ratio of cubic boron nitride to hexagonal boron nitride is about 2:1.
  20. A method as recited in claim 14 comprising adding to the mixture a material selected from a group comprising carbide, nitride, or carbonitride of a group IVb, Vb and VIb transition metals from the periodic table.
  21. A method as recited in claim 19 comprising adding to the mixture titanium carbonitride up to about 40 percent by weight of the mixture.
  22. A method as recited in claim 14 wherein the initial elevated temperature treatment is conducted in a vacuum, ammonia, or hydrogen atmosphere at a temperature in the range of from 600° to 950° C.
  23. A method as recited in claim 14 wherein the cobalt aluminide comprises Co 2 Al 9.
  24. A method for preparing a sintered polycrystalline compact of cubic boron nitride comprising the steps of: combining cubic boron nitride crystals with hexagonal boron nitride, aluminum nitride and cobalt aluminide having a lower melting point than cobalt phase, the cubic boron nitride comprising in the range of from 45 to 65 percent by weight of the mixture, the hexagonal boron nitride comprising in the range of from 30 to 45 percent by weight of the mixture, the aluminum nitride comprising in the range of from 1 to 7 percent of the mixture, and the cobalt aluminide comprising in the range of from 1 to 3 percent by weight of the mixture; compacting the mixture onto a preform; subjecting the preform to a heat treatment in a vacuum, ammonia, or hydrogen atmosphere at a temperature of at least 600° C.; placing the preform onto a tungsten carbide substrate cemented with cobalt; loading the substrate and mixture into a closed chamber; subjecting the mixture and substrate to elevated temperature and elevated pressure conditions sufficient to melt cobalt phase in the substrate, at which conditions the cubic boron nitride is thermodynamically stable, whereby cobalt phase infiltrates the mixture causing intercrystalline bonding; and maintaining the elevated temperature and pressure conditions for a time sufficient to allow for substantial intercrystalline bonding to thereby sinter the compact.
  25. A method as recited in claim 24 comprising adding to the mixture titanium carbonitride in an amount up to about 40 percent by weight of the total mixture.

Description

This invention relates to sintered polycrystalline abrasive compacts of cubic boron nitride for use as machining tools, abrasives, wire dies, wear parts, heat sinks and the like. More specifically, it relates to a process for synthesizing polycrystalline cubic boron nitride (cBN) commencing with cubic boron nitride and hexagonal boron nitride which are subjected to very high temperatures and pressures where cBN is thermodynamically stable.

The high pressure form of boron nitride known as cubic boron nitride is surpassed only by diamond in hardness and has a wide variety of uses as machining tools and the like. Polycrystalline cBN is useful, for example, for high speed machining of ferrous metals where reaction of diamond with the iron is a problem. For rough cutting of ferrous metals it is desirable to use a polycrystalline compact of cBN containing no more than the adjuvants required to form the polycrystalline compact. Such a polycrystalline cBN tool has excellent abrasive wear resistance, thermal stability, high thermal conductivity, good impact resistance and low coefficient of friction in contact with a workpiece.

Typically a polycrystalline compact of cBN is made by subjecting cBN crystals to elevated temperature and pressure in combination with sufficient adjuvants for catalyzing the formation of polycrystalline material. It is desirable, however, to dilute the amount of cubic boron nitride crystals used in the process with hexagonal boron nitride (hBN) as the starting material. The cBN crystals must be made in a high pressure, high temperature press and are therefore relatively expensive.

Citations (26)

  • US3918219A
  • US4016244A
  • US3944398A
  • US4334928A
  • US4343651A
  • US4389465A
  • US4394170A
  • US4342595A
  • US4619698A
  • US4566905A
  • US4590034A
  • US4950557A
  • US4596693A
  • US4647546A
  • US4650776A
  • US5037704A
  • US4911756A
  • US4693746A
  • US4673414A
  • US4690691A
  • US4883648A
  • US4837089A
  • US5043120A
  • US5015265A
  • US5034053A
  • US5194071A
Record as JSON
{
  "publication_number": "US5271749A",
  "country": "US",
  "kind": "A",
  "title": "Synthesis of polycrystalline cubic boron nitride",
  "abstract": "A sintered polycrystalline compact of cubic boron nitride is made by forming a mixture of about 45 to 65 percent by weight cubic boron nitride (cBN), from about 30 to 45 percent by weight hexagonal boron nitride (hBN), and from about 2 to 7 percent by weight an aluminum containing material, preferably aluminum nitride, and cobalt aluminide having a melting temperature lower than the melting temperature of cobalt phase. The mixture of cBN crystals, hBN and adjuvant materials is compacted into preforms and subjected to heat treatment in a non-oxidizing atmosphere. The preforms are placed onto a cemented tungsten carbide substrate containing cobalt and subjected to elevated pressure and temperature conditions at which the boron nitride is thermodynamically stable. The elevated pressure and temperature conditions are maintained for a time sufficient to permit the infiltration of a cobalt phase into the cBN matrix and sinter the compact. Typically, the cobalt phase is infiltrated from a tungsten carbide substrate cemented with cobalt phase. The compact is characterized by substantial intercrystalline cBN to cBN bonding, and has superior abrasive wear resistance, chemical resistance, impact resistance, thermal conductivity and stability. Further, the technique produces a sintered cBN compact that can be machined more efficiently by EDM.",
  "claims": [
    "1. A method for forming a sintered polycrystalline cubic boron nitride compact comprising the steps of: mixing cubic boron nitride crystals, hexagonal boron nitride, cobalt aluminide having a melting point lower than the melting temperature of cobalt, and an aluminum bearing material selected from the group consisting of aluminum nitride, aluminum and aluminum diboride, the mixture comprising at least 30 percent by weight hexagonal boron nitride to facilitate compressing the mixture into a solid preform; and subjecting the mixture in the presence of a cobalt phase to elevated temperature and pressure conditions where cubic boron nitride is thermodynamically stable.",
    "2. A method as recited in claim 1 wherein the ratio of cubic boron nitride to hexagonal boron nitride is about 2:1.",
    "3. A method as recited in claim 1 wherein the mixture contains in the range of from 45 to 65 percent by weight cubic boron nitride.",
    "4. A method as recited in claim 1 wherein the mixture contains in the range of from 30 to 45 percent by weight hexagonal boron nitride.",
    "5. A method as recited in claim 1 wherein the mixture contains in the range of from 1 to 7 percent by weight aluminum nitride.",
    "6. A method as recited in claim 1 wherein the mixture contains in the range of from 1 to 3 percent by weight cobalt aluminide.",
    "7. A method as recited in claim 1 comprising the steps of compressing the mixture into a preform, and placing the preform on a substrate of tungsten carbide cemented with cobalt.",
    "8. A method as recited in claim 1 comprising the initial step of subjecting the mixture to elevated temperature to an environment of hydrogen, ammonia or vacuum at a temperature in the range of from 600° to 950° C.",
    "9. A method as recited in claim 1 comprising adding to the mixture a material selected from a group comprising carbide, nitride, or carbonitride of a group IVb, Vb and VIb transition metal from the periodic table.",
    "10. A method as recited in claim 9 comprising adding titanium carbonitride up to about 40 percent by weight of the mixture.",
    "11. A method as recited in claim 1 comprising the step of placing the mixture on a substrate of tungsten carbide cemented with cobalt for infiltrating cobalt phase into the mixture during the step of subjecting the mixture to elevated temperature and pressure.",
    "12. A method as recited in claim 1 wherein the cobalt aluminide comprises Co 2 Al 9.",
    "13. A sintered polycrystalline compact made by a method as recited in any one of claims 1, 2, 3, 4, 5, 6, 7, 8, 10, 11 or 12.",
    "14. A method for preparing a sintered polycrystalline compact with substantial intercrystalline bonding of high pressure boron nitride which comprises the steps of: forming a mixture comprising high pressure boron nitride with an amount of low pressure boron nitride, an aluminum containing adjuvant material, and cobalt aluminide having a melting temperature lower than the melting temperature of cobalt phase; subjecting the mixture to elevated temperature in a non-oxidizing environment sufficient to remove boron oxide; placing the mixture onto a substrate comprising tungsten carbide cemented with cobalt; subjecting the mixture to elevated temperature and pressure conditions sufficient to melt cobalt phase in the substrate, and at which conditions high pressure boron is thermodynamically stable; and maintaining the elevated conditions for a time sufficient to allow for substantial intercrystalline bonding of cubic boron nitride to thereby sinter the compact.",
    "15. A method as recited in claim 14 wherein the mixture contains in the range of from 1 to 3 percent by weight cobalt aluminide.",
    "16. A method as recited in claim 15 wherein the mixture contains in the range of from 45 to 65 percent by weight cubic boron nitride.",
    "17. A method as recited in claim 16 wherein the mixture contains in the range of from 30 to 45 percent by weight hexagonal boron nitride.",
    "18. A method as recited in claim 17 wherein the mixture contains in the range of from 1 to 7 percent by weight aluminum nitride.",
    "19. A method as recited in claim 15 wherein the ratio of cubic boron nitride to hexagonal boron nitride is about 2:1.",
    "20. A method as recited in claim 14 comprising adding to the mixture a material selected from a group comprising carbide, nitride, or carbonitride of a group IVb, Vb and VIb transition metals from the periodic table.",
    "21. A method as recited in claim 19 comprising adding to the mixture titanium carbonitride up to about 40 percent by weight of the mixture.",
    "22. A method as recited in claim 14 wherein the initial elevated temperature treatment is conducted in a vacuum, ammonia, or hydrogen atmosphere at a temperature in the range of from 600° to 950° C.",
    "23. A method as recited in claim 14 wherein the cobalt aluminide comprises Co 2 Al 9.",
    "24. A method for preparing a sintered polycrystalline compact of cubic boron nitride comprising the steps of: combining cubic boron nitride crystals with hexagonal boron nitride, aluminum nitride and cobalt aluminide having a lower melting point than cobalt phase, the cubic boron nitride comprising in the range of from 45 to 65 percent by weight of the mixture, the hexagonal boron nitride comprising in the range of from 30 to 45 percent by weight of the mixture, the aluminum nitride comprising in the range of from 1 to 7 percent of the mixture, and the cobalt aluminide comprising in the range of from 1 to 3 percent by weight of the mixture; compacting the mixture onto a preform; subjecting the preform to a heat treatment in a vacuum, ammonia, or hydrogen atmosphere at a temperature of at least 600° C.; placing the preform onto a tungsten carbide substrate cemented with cobalt; loading the substrate and mixture into a closed chamber; subjecting the mixture and substrate to elevated temperature and elevated pressure conditions sufficient to melt cobalt phase in the substrate, at which conditions the cubic boron nitride is thermodynamically stable, whereby cobalt phase infiltrates the mixture causing intercrystalline bonding; and maintaining the elevated temperature and pressure conditions for a time sufficient to allow for substantial intercrystalline bonding to thereby sinter the compact.",
    "25. A method as recited in claim 24 comprising adding to the mixture titanium carbonitride in an amount up to about 40 percent by weight of the total mixture."
  ],
  "description_excerpt": "This invention relates to sintered polycrystalline abrasive compacts of cubic boron nitride for use as machining tools, abrasives, wire dies, wear parts, heat sinks and the like. More specifically, it relates to a process for synthesizing polycrystalline cubic boron nitride (cBN) commencing with cubic boron nitride and hexagonal boron nitride which are subjected to very high temperatures and pressures where cBN is thermodynamically stable.\n\nThe high pressure form of boron nitride known as cubic boron nitride is surpassed only by diamond in hardness and has a wide variety of uses as machining tools and the like. Polycrystalline cBN is useful, for example, for high speed machining of ferrous metals where reaction of diamond with the iron is a problem. For rough cutting of ferrous metals it is desirable to use a polycrystalline compact of cBN containing no more than the adjuvants required to form the polycrystalline compact. Such a polycrystalline cBN tool has excellent abrasive wear resistance, thermal stability, high thermal conductivity, good impact resistance and low coefficient of friction in contact with a workpiece.\n\nTypically a polycrystalline compact of cBN is made by subjecting cBN crystals to elevated temperature and pressure in combination with sufficient adjuvants for catalyzing the formation of polycrystalline material. It is desirable, however, to dilute the amount of cubic boron nitride crystals used in the process with hexagonal boron nitride (hBN) as the starting material. The cBN crystals must be made in a high pressure, high temperature press and are therefore relatively expensive.",
  "cpc": [
    "C22C 29/16",
    "B22F 2998/00",
    "B24D 3/06",
    "C04B 35/5831",
    "C22C 2026/005",
    "C22C 26/00"
  ],
  "ipc": [
    "B24D 3/06",
    "C04B 35/5831",
    "C08J 5/14",
    "C22C 26/00",
    "C22C 29/16"
  ],
  "assignees": [
    "Smith International Inc"
  ],
  "inventors": [
    "Ghanshyam Rai",
    "Xian Yao"
  ],
  "filing_date": "1992-11-03",
  "publication_date": "1993-12-21",
  "grant_date": "1993-12-21",
  "priority_date": "1992-11-03",
  "application_number": "US-97082292-A",
  "family_id": "25517558",
  "cited_by_count": 87,
  "citations": [
    "US3918219A",
    "US4016244A",
    "US3944398A",
    "US4334928A",
    "US4343651A",
    "US4389465A",
    "US4394170A",
    "US4342595A",
    "US4619698A",
    "US4566905A",
    "US4590034A",
    "US4950557A",
    "US4596693A",
    "US4647546A",
    "US4650776A",
    "US5037704A",
    "US4911756A",
    "US4693746A",
    "US4673414A",
    "US4690691A",
    "US4883648A",
    "US4837089A",
    "US5043120A",
    "US5015265A",
    "US5034053A",
    "US5194071A"
  ]
}

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