Patent · US7833348B2 · B2 · US
Temperature control method of epitaxial growth apparatus
- (11) Publication number
- US7833348B2
- (21) Application number
- US-53388906-A
- (22) Filing date
- 2006-09-21
- (30) Priority date
- 2005-09-21
- (43) Publication date
- 2010-11-16
- (45) Date of grant
- 2010-11-16
- (52) CPC
- C30B Single-crystal growth; unidirectional solidification of eutectic material or unidirectional demixing of eutectoid material; refining by zone-melting of material; production of a homogeneous polycrystalline material with defined structure; single crystals or homogeneous polycrystalline material with defined structure; after-treatment of single crystals or a homogeneous polycrystalline material with defined structure; apparatus therefor: 25/10, 25/16
- (73) Assignee
- SUMCO CORP
- (54) Title
- Temperature control method of epitaxial growth apparatus
- (57) Abstract
An object of the invention is to calibrate an upper pyrometer for indirectly measuring a substrate temperature at the time of epitaxial growth in a comparatively short time and with accuracy to thereby improve the quality of an epitaxial substrate. After calibrating an upper pyrometer by a thermocouple mounted to a temperature calibrating susceptor, a measured value of a lower pyrometer is adjusted to a calibrated value of the upper pyrometer. Then, a correlation line between substrate temperature indirectly measured by the upper pyrometer at the time of epitaxial growth onto a sample substrate and haze of a sample substrate measured immediately after epitaxial growth is set to indirectly measure a substrate temperature by the upper pyrometer at the time of epitaxial growth onto a mass-production substrate. Moreover, substrate temperature at the time of epitaxial growth onto the mass-production substrate is estimated by applying the haze of the mass-production substrate measured immediately after epitaxial growth to the correlation line and then a measured temperature of the upper pyrometer is adjusted to the estimated temperature.
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Claims (3)
- A method for controlling the temperature of an epitaxial growth apparatus having an upper pyrometer above a mass-production susceptor and a lower pyrometer below the mass-production susceptor to grow an epitaxial layer on a mass-production substrate mounted onto the susceptor based on the temperature readings of both the upper and lower pyrometers, comprising: performing a first calibration for calibrating the upper pyrometer by a thermocouple mounted to a temperature calibrating susceptor previously set in place of the mass-production susceptor; adjusting a measured value of the lower pyrometer to a calibrated value of the upper pyrometer; setting a correlation line between a temperature of a sample substrate indirectly measured by the upper pyrometer at the time of epitaxial growth onto the sample substrate previously mounted onto the mass-production susceptor instead of the mass-production substrate and haze of the sample substrate measured immediately after epitaxial growth; indirectly measuring a temperature (Tx) of the mass production substrate by the upper pyrometer at the time of epitaxial growth onto the mass-production substrate; estimating a temperature (Ty) of the mass production substrate at the time of epitaxial growth onto the mass-production substrate by applying the haze of the mass-production substrate measured immediately after the epitaxial growth to the correlation line; and performing a second calibration for adjusting the measured temperature (Tx) of the upper pyrometer to the estimated temperature (Ty) of the mass production substrate.
- The method according to claim 1 wherein each of the haze of the sample substrate and the haze of the mass-production substrate is measured immediately after epitaxial growth by using a laser surface inspection apparatus.
- The method according to claim 1, wherein the calibration for adjusting the temperature (Tx) of the mass-production substrate indirectly measured to the estimated temperature (Ty) of the mass-production substrate is carried out when the difference between the temperature (Tx) of the mass-production substrate at the time of epitaxial growth indirectly measured by the upper pyrometer and the temperature (Ty) of the mass-production substrate at the time of epitaxial growth estimated by applying the haze of the mass-production substrate to a correlation line becomes 5° C. or higher.
Citations (20)
- JP2000269137A
- JPH1151769A
- US2007062439A1
- US2007291816A1
- US3172792A
- US3178313A
- US3235418A
- US3316121A
- US3567895A
- US3666553A
- US3751310A
- US3830654A
- US4806321A
- US5213985A
- US5568978A
- US5710407A
- US6596973B1
- US6638876B2
- US6703592B2
- US6924463B2
Record as JSON
{
"publication_number": "US7833348B2",
"country": "US",
"kind": "B2",
"title": "Temperature control method of epitaxial growth apparatus",
"abstract": "An object of the invention is to calibrate an upper pyrometer for indirectly measuring a substrate temperature at the time of epitaxial growth in a comparatively short time and with accuracy to thereby improve the quality of an epitaxial substrate. After calibrating an upper pyrometer by a thermocouple mounted to a temperature calibrating susceptor, a measured value of a lower pyrometer is adjusted to a calibrated value of the upper pyrometer. Then, a correlation line between substrate temperature indirectly measured by the upper pyrometer at the time of epitaxial growth onto a sample substrate and haze of a sample substrate measured immediately after epitaxial growth is set to indirectly measure a substrate temperature by the upper pyrometer at the time of epitaxial growth onto a mass-production substrate. Moreover, substrate temperature at the time of epitaxial growth onto the mass-production substrate is estimated by applying the haze of the mass-production substrate measured immediately after epitaxial growth to the correlation line and then a measured temperature of the upper pyrometer is adjusted to the estimated temperature.",
"claims": [
"1. A method for controlling the temperature of an epitaxial growth apparatus having an upper pyrometer above a mass-production susceptor and a lower pyrometer below the mass-production susceptor to grow an epitaxial layer on a mass-production substrate mounted onto the susceptor based on the temperature readings of both the upper and lower pyrometers, comprising: performing a first calibration for calibrating the upper pyrometer by a thermocouple mounted to a temperature calibrating susceptor previously set in place of the mass-production susceptor; adjusting a measured value of the lower pyrometer to a calibrated value of the upper pyrometer; setting a correlation line between a temperature of a sample substrate indirectly measured by the upper pyrometer at the time of epitaxial growth onto the sample substrate previously mounted onto the mass-production susceptor instead of the mass-production substrate and haze of the sample substrate measured immediately after epitaxial growth; indirectly measuring a temperature (Tx) of the mass production substrate by the upper pyrometer at the time of epitaxial growth onto the mass-production substrate; estimating a temperature (Ty) of the mass production substrate at the time of epitaxial growth onto the mass-production substrate by applying the haze of the mass-production substrate measured immediately after the epitaxial growth to the correlation line; and performing a second calibration for adjusting the measured temperature (Tx) of the upper pyrometer to the estimated temperature (Ty) of the mass production substrate.",
"2. The method according to claim 1 wherein each of the haze of the sample substrate and the haze of the mass-production substrate is measured immediately after epitaxial growth by using a laser surface inspection apparatus.",
"3. The method according to claim 1, wherein the calibration for adjusting the temperature (Tx) of the mass-production substrate indirectly measured to the estimated temperature (Ty) of the mass-production substrate is carried out when the difference between the temperature (Tx) of the mass-production substrate at the time of epitaxial growth indirectly measured by the upper pyrometer and the temperature (Ty) of the mass-production substrate at the time of epitaxial growth estimated by applying the haze of the mass-production substrate to a correlation line becomes 5° C. or higher."
],
"cpc": [
"C30B 25/10",
"C30B 25/16"
],
"assignees": [
"SUMCO CORP"
],
"filing_date": "2006-09-21",
"publication_date": "2010-11-16",
"grant_date": "2010-11-16",
"priority_date": "2005-09-21",
"application_number": "US-53388906-A",
"family_id": "37882795",
"citations": [
"JP2000269137A",
"JPH1151769A",
"US2007062439A1",
"US2007291816A1",
"US3172792A",
"US3178313A",
"US3235418A",
"US3316121A",
"US3567895A",
"US3666553A",
"US3751310A",
"US3830654A",
"US4806321A",
"US5213985A",
"US5568978A",
"US5710407A",
"US6596973B1",
"US6638876B2",
"US6703592B2",
"US6924463B2"
]
}
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