Light-emitting element, light-emitting device, lighting device, and electronic appliance

{
  "publication_number": "US2007205417A1",
  "country": "US",
  "kind": "A1",
  "title": "Light-emitting element, light-emitting device, lighting device, and electronic appliance",
  "abstract": "The light-emitting layer contains a light-emitting base including a chalcogenide compound, and a light-emitting center including two kinds of halogen compounds. The chalcogenide compound contains a chalcogen element and an element selected from elements belonging to Group 2 to Group 13 of the periodic table, and the halogen compound contains a halogen element and an element selected from typical metal elements, transition metal elements, or rare earth elements.",
  "claims": [
    "1. A light-emitting device comprising: a first electrode; a light-emitting layer formed over the first electrode and comprising a base material and a luminescence center; and a second electrode formed over the light-emitting layer, wherein the base material contains a chalcogen element and at least one element selected from the group consisting of elements belonging to Group 2 to Group 13 of the periodic table, and wherein the luminescence center contains at least one halogen element and at least one element selected from the group consisting of typical metal elements, transition metal elements, and rare earth elements.",
    "2. The light-emitting device according to claim 1, wherein the base material is a compound selected from the group consisting of ZnO, ZnS, ZnSe, MgS, CaS, SrS, SrGa 2 S 4, and ZnMgS.",
    "3. The light-emitting device according to claim 1, wherein the luminescence center is a compound selected from the group consisting of CuF, CuF 2, CuCl, CuCl 2, CuBr, CuBr 2, CuI, CuI 2, AgBr, and AgI.",
    "4. The light-emitting device according to claim 1, wherein the transition metal elements are Cu, Ag, and Au.",
    "5. An electronic appliance comprising the light-emitting device according to claim 1.",
    "6. A light-emitting device comprising: a first electrode; a dielectric layer formed over the first electrode; a light-emitting layer formed over the dielectric layer and comprising a base material and a luminescence center; and a second electrode formed over the light-emitting layer, wherein the base material contains a chalcogen element and at least one element selected from the group consisting of elements belonging to Group 2 to Group 13 of the periodic table, and wherein the luminescence center contains at least one halogen element and at least one element selected from the group consisting of typical metal elements, transition metal elements, and rare earth elements.",
    "7. The light-emitting device according to claim 6, wherein the base material is a compound selected from the group consisting of ZnO, ZnS, ZnSe, MgS, CaS, SrS, SrGa 2 S 4, and ZnMgS.",
    "8. The light-emitting device according to claim 6, wherein the luminescence center is a compound selected from the group consisting of CuF, CuF 2, CuCl, CuCl 2, CuBr, CuBr 2, CuI, CuI 2, AgBr, and AgI.",
    "9. The light-emitting device according to claim 6, wherein the transition metal elements are Cu, Ag, and Au.",
    "10. The light-emitting device according to claim 6, wherein the dielectric layer comprises at least one material selected from the group consisting of acetal resin, an epoxy resin, methyl methacrylate, polyester, polyethylene, polystyrene, cyano ethyl cellulose, aluminum nitride boron nitride, titanate, strontium titanate, lithium titanate, lead titanate, tantalum pentoxide, bismuth oxide, calcium titanate, potassium niobate, silicon oxide, and aluminum oxide.",
    "11. An electronic appliance comprising the light-emitting device according to claim 6.",
    "12. A light-emitting device comprising: a first electrode; a first dielectric layer formed over the first electrode; a light-emitting layer formed over the first dielectric layer and comprising a base material and a luminescence center; a second dielectric layer formed over the light-emitting layer; and a second electrode formed over the second dielectric layer, wherein the base material contains a chalcogen element and at least one element selected from the group consisting of elements belonging to Group 2 to Group 13 of the periodic table, and wherein the light-emitting center contains at least one halogen element and at least one element selected from the group consisting of typical metal elements, transition metal elements, and rare earth elements.",
    "13. The light-emitting device according to claim 12, wherein the base material is a compound selected from the group consisting of ZnO, ZnS, ZnSe, MgS, CaS, SrS, SrGa 2 S 4, and ZnMgS.",
    "14. The light-emitting device according to claim 12, wherein the luminescence center is a compound selected from the group consisting of CuF, CuF 2, CuCl, CuCl 2, CuBr, CuBr 2, CuI, CuI 2, AgBr, and AgI.",
    "15. The light-emitting device according to claim 12, wherein the transition metal elements are Cu, Ag, and Au.",
    "16. The light-emitting device according to claim 12, wherein each of the first and second dielectric layers comprises at least one material selected from the group consisting of acetal resin, an epoxy resin, methyl methacrylate, polyester, polyethylene, polystyrene, cyano ethyl cellulose, aluminum nitride boron nitride, titanate, strontium titanate, lithium titanate, lead titanate, tantalum pentoxide, bismuth oxide, calcium titanate, potassium niobate, silicon oxide, and aluminum oxide.",
    "17. An electronic appliance comprising the light-emitting device according to claim 12.",
    "18. A lighting device comprising: a first electrode; a light-emitting layer formed over the first electrode and comprising a base material and a light-emitting center; and a second electrode formed over the light-emitting layer, wherein the base material contains a chalcogen element and at least one element selected from the group consisting of elements belonging to Group 2 to Group 13 of the periodic table, and wherein the light-emitting center contains at least one halogen element and at least one element selected from the group consisting of typical metal elements, transition metal elements, and rare earth elements.",
    "19. The lighting device according to claim 18, wherein the base material is a compound selected from the group consisting of ZnO, ZnS, ZnSe, MgS, CaS, SrS, SrGa 2 S 4, and ZnMgS.",
    "20. The lighting device according to claim 18, wherein the light-emitting center is a compound selected from the group consisting of CuF, CuF 2, CuCl, CuCl 2, CuBr, CuBr 2, CuI, CuI 2, AgBr, and AgI.",
    "21. The lighting device according to claim 18, wherein the transition metal elements are Cu, Ag, and Au.",
    "22. The lighting device according to claim 18, further comprising a dielectric layer between the first electrode and the light-emitting layer.",
    "23. An electronic appliance comprising the lighting device according to claim 18.",
    "24. A light-emitting device comprising: a first electrode; a light-emitting layer formed over the first electrode and comprising a compound represented by a composition formula of MX, an acceptor, a first donor, a second donor; and a second electrode formed over the light-emitting layer, wherein the compound has a crystal structure, wherein M is an element selected from the group consisting of elements belonging to Group 2 to Group 13 of the periodic table, wherein X is a chalcogen element, and wherein the acceptor is an ion having lower valence than M.",
    "25. The light-emitting device according to claim 24, wherein the light-emitting layer further comprises another acceptor which is an ion having lower valence than M.",
    "26. The light-emitting device according to claim 24, wherein each of the first and second donors is an ion having lower valence than X.",
    "27. The light-emitting device according to claim 24, wherein M is composed of two or more elements belonging to Group 2 to Group 13 of the periodic table.",
    "28. The light-emitting device according to claim 24, wherein the crystal structure including at least one unit cell.",
    "29. The light-emitting device according to claim 28, wherein a crystal system of the unit cell is one of cubic system, hexagonal system, tetragonal system, orthorhombic system, monoclinic system, and triclinic system, or a combination thereof.",
    "30. The light-emitting device according to claim 24, wherein the compound is one selected from the group consisting of ZnO, ZnS, ZnSe, MgS, CaS, SrS, and ZnMgS.",
    "31. An electronic appliance comprising the light-emitting device according to claim 24.",
    "32. A light-emitting device comprising: a first electrode; a light-emitting layer formed over the first electrode and comprising a compound represented by a composition formula of MX, a first acceptor, a second acceptor, a first donor, and a second donor; and a second electrode formed over the light-emitting layer, wherein the compound has a crystal structure, wherein M is an element selected from the group consisting of elements belonging to Group 2 to Group 13 of the periodic table, wherein X is a chalcogen element, wherein each of the first and second acceptors is an element selected from the group consisting of typical metal elements, transition metal elements, and rare earth elements, wherein the first donor is a first halogen element, and wherein the second donor is a second halogen element other than the first halogen element.",
    "33. The light-emitting device according to claim 32, wherein the crystal structure including at least one unit cell.",
    "34. The light-emitting device according to claim 33, wherein a crystal system of the unit cell is one of cubic system, hexagonal system, tetragonal system, orthorhombic system, monoclinic system, and triclinic system, or a combination thereof.",
    "35. The light-emitting device according to claim 32, wherein a first lattice point of the X is replaced by the first donor in the crystal structure, wherein a second lattice point of the X is replaced by the second donor in the crystal structure, wherein each of the first and second acceptors locates at a lattice point of M or an interstice in the crystal structure.",
    "36. The light-emitting device according to claim 32, wherein the compound is one selected from the group consisting of ZnO, ZnS, ZnSe, MgS, CaS, and SrS.",
    "37. The light-emitting device according to claim 32, wherein the first acceptor is the same as the second acceptor.",
    "38. An electronic appliance comprising the light-emitting device according to claim 32."
  ],
  "cpc": [
    "C09K 11/612",
    "H05B 33/145",
    "H10K 50/11"
  ],
  "assignees": [
    "SEMICONDUCTOR ENERGY LAB"
  ],
  "filing_date": "2007-02-27",
  "publication_date": "2007-09-06",
  "priority_date": "2006-03-02",
  "application_number": "US-67946607-A",
  "family_id": "38459121",
  "citations": [
    "US2005073246A1",
    "US5102579A",
    "US5648181A",
    "US6682664B1",
    "US6770221B1",
    "US6939482B2",
    "US6982124B2"
  ]
}