Plasma etching apparatus

{
  "publication_number": "US4101411A",
  "country": "US",
  "kind": "A",
  "title": "Plasma etching apparatus",
  "abstract": "In an apparatus wherein a microwave discharge is caused by introducing a discharge gas into a discharge area to which a microwave electric field is supplied by a microwave coupler and to which an external magnetic field is supplied by a magnetic field generator, whereby the surface of a substrate is etched by using ions in a generated plasma, a plasma etching apparatus is characterized by employing a round waveguide as the microwave coupler, the discharge area being formed within the round waveguide.",
  "claims": [
    "1. In a plasma etching apparatus comprising: microwave generator means; waveguide means coupled to said generator for propagating microwaves therefrom; a discharge area; coupling means for introducing the microwave power from said waveguide into said discharge area; magnetic field supplying means for applying an external magnetic field to said discharge area; and gas supply conduit means to introduce a discharge gas into said discharge area; whereby the surface of a substrate disposed in said discharge area is processed by ions, radical atoms and radical molecules in a plasma produced within said discharge area; the improvement wherein said coupling means comprises a round waveguide means to introduce the microwave power and wherein said discharge area is provided within said round waveguide.",
    "2. The improved plasma etching apparatus according to claim 1, wherein said round waveguide means further comprises insulator means for dividing said round waveguide means into a first section connected to said waveguide means and a second section forming said discharge area.",
    "3. The improved plasma etching apparatus according to claim 1, wherein a container made of insulator material is disposed in said round waveguide means, and said discharge area is provided within said container made of insulator material.",
    "4. The improved plasma etching apparatus according to claim 3, wherein said container is made of a material selected from the group consisting of quartz glass and aluminous porcelain.",
    "5. The improved plasma etching apparatus according to claim 1, wherein said waveguide means for propagating microwaves is a rectangular waveguide means, and said round waveguide is so constructed that its axis lies at a position 1/4 of a guide wavelength from an end of said rectangular waveguide.",
    "6. In an apparatus for generating a microwave discharge comprising: a discharge area; means for introducing a discharge gas into said discharge area; means for introducing a microwave electric field into said discharge area; and means for applying a magnetic field to said discharge area, wherein a plasma is produced for etching the surface of a substrate located in said discharge area, said microwave electric field introducing means including substantially round waveguide means with said discharge area formed therewithin.",
    "7. An apparatus as defined in claim 6, wherein said microwave electric field introducing means further comprises container means made of insulator material disposed in said round waveguide means and wherein said discharge area is provided therewithin."
  ],
  "cpc": [
    "H01J 37/32229",
    "H01J 37/32192",
    "H01J 37/32238"
  ],
  "assignees": [
    "HITACHI LTD"
  ],
  "filing_date": "1977-04-15",
  "publication_date": "1978-07-18",
  "grant_date": "1978-07-18",
  "priority_date": "1976-04-15",
  "application_number": "US-78787877-A",
  "family_id": "26382522",
  "citations": [
    "US3879597A"
  ]
}