Silicon core wire

{
  "publication_number": "US11565939B2",
  "country": "US",
  "kind": "B2",
  "title": "Silicon core wire",
  "abstract": "In the silicon core wire according to a first aspect of the present invention, a male thread part formed at one end of a first thin silicon rod and a female thread part formed at one end of a second thin silicon rod may be screwed together and fastened. In the silicon core wire according to a second aspect of the present invention, a thread part formed at one end of a first thin silicon rod and a thread part formed at one end of a second thin silicon rod may be screwed together and fastened via an adapter with thread parts formed at both ends.",
  "claims": [
    "1. A silicon core wire, wherein a male thread part formed at one end of a first silicon rod and a male thread part formed at one end of a second silicon rod are screwed together and fastened via an adapter with female thread parts formed at both ends, wherein the adapter covers the male thread part formed at the one end of the first silicon rod and the male thread part formed at the one end of the second silicon rod from outside, and wherein the adapter is a silicon member.",
    "2. The silicon core wire according to claim 1, wherein the first silicon rod and the second silicon rod are silicon rods collected from a polycrystalline silicon rod or a monocrystalline silicon rod."
  ],
  "description_excerpt": "The present invention relates to a structure of a silicon core wire used for producing polycrystalline silicon, or the like.\n\nThe present application claims the priority of Japanese Patent Application No. 2019-079879 filed on Apr. 19, 2019, the contents of which are entirely incorporated by reference.\n\nPolycrystalline silicon is used as a raw material of monocrystalline silicon for producing a semiconductor or of silicon for producing a solar cell. As a method for producing polycrystalline silicon, the Siemens process is known. In this method, generally, silane-based raw material gas is brought into contact with a heated silicon core wire (thin silicon rod), and the polycrystalline silicon is deposited on a surface of the silicon core wire by the chemical vapor deposition (CVD) method.\n\nIn this Siemens process, two thin silicon rods extending in a vertical direction and one thin silicon rod extending in a horizontal direction are assembled into an inverted-U shape. Then, bottom ends of the two thin silicon rods extending in the vertical direction are connected to core wire holders and fixed to a pair of metal electrodes arranged on a base plate. In general, in a reacting furnace, a plurality of sets of inverted-U shaped silicon core wires is arranged.\n\nWhen the silicon core wire is heated to a deposition temperature by energization and supplied with raw material gas (for example, mixed gas of trichlorosilane and hydrogen), polycrystalline silicon is vapor-deposited on a surface of the silicon core wire by a CVD reaction, and a polycrystalline silicon rod having a desired diameter is formed in an inverted-U shape.",
  "cpc": [
    "C01B 33/02",
    "C01B 33/035",
    "C23C 16/24",
    "F16B 7/182",
    "H01B 1/04",
    "H01R 13/46",
    "Y10T 428/2975"
  ],
  "ipc": [
    "C01B 33/02",
    "C01B 33/035",
    "C23C 16/24",
    "F16B 7/18",
    "H01B 1/04",
    "H01R 13/46"
  ],
  "assignees": [
    "Shin Etsu Chemical Co Ltd"
  ],
  "inventors": [
    "Naruhiro Hoshino",
    "Tetsuro Okada",
    "Masahiko Ishida"
  ],
  "filing_date": "2020-04-08",
  "publication_date": "2023-01-31",
  "grant_date": "2023-01-31",
  "priority_date": "2019-04-19",
  "application_number": "US-202016843722-A",
  "family_id": "70110149",
  "cited_by_count": 0,
  "citations": [
    "US6488317B1",
    "JP2001302256A",
    "US20020076273A1",
    "US20030014202A1",
    "JP2004035311A",
    "JP2016033112A",
    "US20090238992A1",
    "EP2108619A2",
    "EP2161241A2",
    "US20100058988A1",
    "JP2010090024A",
    "JP2011116634A",
    "US20110220283A1",
    "US20110229717A1",
    "JP2011195441A",
    "US20120060562A1",
    "JP2012062243A",
    "US20170167023A1",
    "JP3206953U",
    "JP3206952U",
    "JP2018122340A"
  ]
}