Power-on reset circuit for controlling test mode entry

{
  "publication_number": "US5115146A",
  "country": "US",
  "kind": "A",
  "title": "Power-on reset circuit for controlling test mode entry",
  "abstract": "A power-on reset circuit is disclosed, of the type having a latch which powers up into a preferred state, and which also has a timed switch for switching the latch after a selected duration of time following the power supply voltage reaching a threshold level. The disclosed power-on reset circuit further includes a reset circuit for discharging the output node of the latch upon loss of an adequate level for the power supply voltage. The reset circuit includes a discharging transistors which has its gate biased to a voltage above that of the threshold voltage of the discharging transistor, so that full discharge of the output of the latch is ensured. Alternate configurations of the reset circuit are disclosed. In each case, the timed switch is also re-enabled by the operation of the reset circuit so that the power-on reset circuit is ready to respond to renewed powering-up of the power supply voltage. The disclosed power-on reset circuits, including the reset circuit, thus provide full and prompt reset of the power-on signal even in the event of brief power supply loss.",
  "claims": [
    "1. A power-on reset circuit comprising: a latch, biased from a bias voltage terminal, and having a first state into which it enters upon the power-up of a bias voltage, said latch having an output for indicating the state of said latch; a timed switch circuit, having an input coupled to said bias voltage terminal, having a feedback input coupled to the output of said latch, and having an output coupled to said latch, for switching said latch to a second state upon the voltage at said bias voltage terminal exceeding a first threshold level for a selected duration of time, said timed switch circuit disabled responsive to the output of said latch indicating said second state and enabled responsive to the output of said latch indicating said first state; and a reset circuit, having an input coupled to said bias voltage terminal and having an output coupled to the output of said latch, for resetting the output of said latch to said first state upon the voltage at said bias voltage terminal falling below a second threshold level, thereby enabling said timed switch circuit.",
    "2. The circuit of claim 1, wherein said first state is a preferential state and said latch.",
    "3. The circuit of claim 1, further comprising: a delay circuit, coupled to the output of said latch, for generating a power-on signal responsive to said latch switching to said second state and after a selected delay interval.",
    "4. The circuit of claim 3, wherein said feedback input of said timed switch circuit is coupled to said delay circuit.",
    "5. The circuit of claim 1, wherein said timed switch comprises: a charging circuit, biased from said bias voltage terminal; a capacitor, coupled to said charging circuit; and an output device, coupled to said capacitor and to said latch, for switching said latch responsive to said capacitor being charged by said charging circuit to a threshold voltage.",
    "6. A power-on reset circuit, comprising: a latch comprising first and second cross-coupled inverters, biased from a bias voltage terminal, said latch having a first state into which it enters upon the power-up of a bias voltage; a switch circuit, coupled to said bias voltage terminal and to said latch, for switching said latch to a second state upon the voltage at said bias voltage terminal reaching a first threshold level; and a reset circuit, coupled to said bias voltage terminal and said latch, for resetting said latch to said first state upon the voltage at said bias voltage terminal falling below a second threshold level, said reset circuit comprising: a discharge transistor having a conductive path connected between an input of said first inverter and a reset node, and having a control terminal; and a bias device coupled between said bias voltage terminal and the control terminal of said discharge transistor.",
    "7. The circuit of claim 6, wherein said bias device comprises a diode.",
    "8. The circuit of claim 6, wherein said bias device comprises a bias transistor having a conductive path coupled between said bias voltage terminal and the control terminal of said discharge transistor, and having a control terminal connected to one end of its conductive path in such a manner that the voltage at the control terminal of said discharge transistor is at least a forward-biased junction voltage drop above the voltage at said bias voltage terminal.",
    "9. The circuit of claim 8, wherein said discharge transistor is a field-effect transistor; and wherein said forward-biased junction voltage drop is greater than the threshold voltage of said discharge transistor.",
    "10. The circuit of claim 6, further comprising: a capacitor connected between the control terminal of said discharge transistor and a reference voltage node.",
    "11. The circuit of claim 10, wherein said reference voltage node is ground.",
    "12. The circuit of claim 6, further comprising: a clamping device, coupled between the control terminal of said discharge transistor and said bias voltage terminal, for limiting the bias of said control terminal of said discharge transistor upon the voltage at said bias voltage terminal exceeding said first threshold voltage.",
    "13. The circuit of claim 12, wherein said clamping device comprises a diode.",
    "14. The circuit of claim 12, wherein said clamping device comprises a clamping transistor having a conductive path coupled between said bias voltage terminal and the control terminal of said discharge transistor, and having a control terminal connected to one end of its conductive path in such a manner that the voltage at the control terminal of said discharge transistor is clamped to a forward-biased junction voltage drop below the voltage at said bias voltage terminal upon the voltage at said bias voltage terminal exceeding said first threshold voltage.",
    "15. A method of generating a signal in an integrated circuit responsive to power up of a voltage at a power supply terminal, comprising: setting a latch, upon power up of said power supply terminal, so that its output presents a first state; initiating a timed period beginning from the time that the voltage at said power supply terminal reaches a first threshold voltage; switching said latch to present a second state responsive to the expiration of said timed period; resetting said timed period responsive to said switching step; discharging the output node of said latch to said first state upon the voltage at said power supply terminal falling below a second threshold level, said discharging step enabling the initiating step to be performed; repeating said initiating, switching and resetting steps responsive to the voltage at said power supply terminal reaching said first threshold voltage after said discharging step; and driving said signal responsive to said output node of said latch.",
    "16. The method of claim 15, wherein said discharging step comprises: coupling said output node to said power supply terminal responsive to the voltage at said power supply terminal falling below said second threshold level.",
    "17. The circuit of claim 15, wherein said initiating step comprises charging a capacitor; and wherein said resetting step comprises discharging said capacitor responsive to said output node of said latch being discharged to said first state.",
    "18. A method of generating a signal in an integrated circuit responsive to power up of a voltage at a power supply terminal, comprising: setting an output node in a latch from a first state to a second state upon the voltage at said power supply terminal reaching a first threshold voltage; discharging said output node to said first state upon the voltage at said power supply terminal falling below a second threshold level by biasing the gate of a discharging transistor coupled between said output node and said power supply terminal to an on-state responsive to the voltage at said power supply terminal falling below said second threshold level; and driving said signal responsive to said output node of said latch.",
    "19. The method of claim 18, wherein said biasing step comprises: charging the control terminal of said discharging terminal to an on-state responsive to the voltage at said power supply terminal exceeding said first threshold level; and retaining the voltage at the control terminal at said on-state after the voltage at said power supply terminal falls below said second threshold level.",
    "20. The method of claim 19, further comprising the step of delaying said charging step responsive to said power supply terminal reaching said first threshold level until after said setting step.",
    "21. The method of claim 19, further comprising: clamping the control terminal of said discharging transistor to a voltage below the voltage at said power supply terminal when above said first threshold level.",
    "22. A power-on reset circuit, comprising: a latch, biased from a bias voltage terminal, and having a first preferential state into which it enters upon the power-up of a bias voltage, wherein said latch comprises: first and second cross-coupled inverters; and a capacitor, coupled between the input of said first inverter and a reference voltage node, said capacitor for coupling the input of said first inverter to said reference voltage node; a switch circuit, coupled to said bias voltage terminal and to said latch, for switching said latch to a second state upon the voltage at said bias voltage terminal reaching a first threshold level; and a reset circuit, coupled to said bias voltage terminal and said latch, for resetting said latch to said first state upon the voltage at said bias voltage terminal falling below a second threshold level.",
    "23. The circuit of claim 22, wherein said reference voltage node is coupled to said bias voltage terminal.",
    "24. The circuit of claim 22, wherein said reference voltage node is coupled to a ground terminal."
  ],
  "description_excerpt": "This invention is in the field of semiconductor memories, and is specifically directed to the entry into special test modes for such memories.\n\nThis application is related to application Ser. No. 552,567, filed June 29, 1990, incorporated herein by this reference. This application is also related to applications Ser. Nos. 569,009, 568,968, 570,148, 570,149, 569,002, and 570,124, all incorporated herein by reference, all contemporaneously filed with this application. All of these applications are assigned to SGST-Thomson Microelectronics, Inc.\n\nIn modern high density memories, such as random access memories having 2 20 bits (1 Megabit) or more, the time and equipment required to test functionality and timing of all bits in the memory constitutes a significant portion of the manufacturing cost. Accordingly, as the time required for such testing increases, the manufacturing costs also increase. Similarly, if the time required for the testing of the memory can be reduced, the manufacturing cost of the memories is similarly reduced. Since the manufacturing of memory devices is generally done in high volume, the savings of even a few seconds per device can result in significant cost reduction and capital avoidance, considering the high volume of memory devices produced.\n\nRandom access memories (RAMs) are especially subject to having significant test costs, not only because of the necessity of both writing data to and reading data from each of the bits in the memory, but also because RAMs are often subject to failures due to pattern sensitivity.",
  "cpc": [
    "G11C 7/22",
    "G01R 31/31701",
    "G06F 1/24",
    "G11C 29/00",
    "G11C 29/46",
    "H03K 3/0375",
    "H03K 3/356008"
  ],
  "ipc": [
    "G01R 31/317",
    "G06F 1/24",
    "G06F 1/26",
    "G11C 29/46",
    "G11C 7/22",
    "H03K 3/037",
    "H03K 3/356"
  ],
  "assignees": [
    "SGS Thomson Microelectronics Inc"
  ],
  "inventors": [
    "David C. McClure"
  ],
  "filing_date": "1990-08-17",
  "publication_date": "1992-05-19",
  "grant_date": "1992-05-19",
  "priority_date": "1990-08-17",
  "application_number": "US-56900090-A",
  "family_id": "24273678",
  "cited_by_count": 56,
  "citations": [
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    "US4654849B1",
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    "US4788454A"
  ]
}