High power laser diode driver utilizing a monolithic semiconductor device with a thyristor-like structured switch

{
  "publication_number": "US5477556A",
  "country": "US",
  "kind": "A",
  "title": "High power laser diode driver utilizing a monolithic semiconductor device with a thyristor-like structured switch",
  "abstract": "A laser diode driver utilizing a monolithic semiconductor device an energy storage capacitor and an optically activated, thyristor-like structured p + -n-i-p-n + semiconductor switch integrated onto a single substrate, capable of achieving high reliability, high efficiency, and high pulse repetition frequency.",
  "claims": [
    "1. A laser diode driver for storing energy and for activating by an optical signal, said laser diode driver comprising: capacitor means for storing the energy; a semiconductor means for switching by the optical signal; a single substrate; the capacitor means and the semiconductor switch means integrated into the single substrate; and wherein the semiconductor switch means has a p + -n-i-p-n + structure."
  ],
  "description_excerpt": "1. Field of the Invention\n\nThe present invention relates to a laser diode driver, and more particularly to a laser diode driver utilizing a monolithic semiconductor device with a thyristor-like structured switch.\n\n2. Description of the Prior Art\n\nWe have already proposed a high power, high pulse repetition frequency (PRF), compact, pulsed laser diode driver utilizing a monolithic semiconductor device in the pending U.S. patent application Ser. No. 08/247,064, allowed Feb. 7, 1995. Such a monolithic semiconductor device, in which the energy storage capacitor and the optically activated semiconductor switch are integrated onto a single high resistance semiconductor wafer substrate, is used to minimize the stray inductance and stray capacitance effects. The result is a pulsed, high power laser driver capable of fast turn on and turn off times and high PRF.\n\nIn an ideal operating condition, the output laser pulse width is determined by the two-way wave transit time in the energy storage non-uniform impedance stripline. In addition, the non-uniform impedance stripline induces current gain. Therefore, utilization of the non-uniform impedance stripline structure as the energy storage capacitor and the optically activated semiconductor switches as a switch is very effective way for the generation of the high peak power, high PRF, laser pulses with extremely narrow pulsewidth.\n\nHowever, operation of this device depends on an optically activated semiconductor switch, in which it requires triggering optical energy to turn on the switch.",
  "cpc": [
    "H01S 5/042",
    "B25J 19/0004",
    "B25J 19/005",
    "B25J 9/1602",
    "B25J 9/1674",
    "H02J 7/34"
  ],
  "ipc": [
    "G05D 1/02",
    "G05F 1/10",
    "H01S 5/042"
  ],
  "inventors": [
    "Hyung D. Chung"
  ],
  "filing_date": "1994-08-02",
  "publication_date": "1995-12-19",
  "grant_date": "1995-12-19",
  "priority_date": "1994-04-18",
  "application_number": "US-28429994-A",
  "family_id": "19381225",
  "cited_by_count": 3,
  "citations": [
    "US5331234A"
  ]
}