Method and apparatus for mode locking of external cavity semiconductor lasers with saturable Bragg reflectors

{
  "publication_number": "US6449301B1",
  "country": "US",
  "kind": "B1",
  "title": "Method and apparatus for mode locking of external cavity semiconductor lasers with saturable Bragg reflectors",
  "abstract": "External cavity semiconductor lasers using a saturable Bragg reflector as an external reflector are mode locked and produce output pulses of 1.9 ps from a semiconductor lasers without dispersion compensation. By coupling the output to a standard single mode fiber with a length of 35 m to compensate the linear chirp, the mode-locked pulse duration as short as 880 fs is achieved.",
  "claims": [
    "1. A laser capable of generating short pulses of less than 1000 femtoseconds comprising: a semiconductor laser; and a resonant optical cavity having a reflecting mirror, said mirror comprising a saturable Bragg reflector.",
    "2. The laser of claim 1 wherein said semiconductor laser comprises a buried heterostructure multiple quantum well laser.",
    "3. The laser of claim 2 wherein said buried heterostructure multiple quantum well laser comprises an InGaAs/InGaAsP/InP buried heterostructure multiple quantum well laser.",
    "4. The laser of claim 3 wherein said InGaAs/InGaAsP/InP buried heterostructure multiple quantum well laser is fabricated using organometallic vapor phase epitaxy.",
    "5. The laser of claim 1 wherein said resonant optical cavity is an external cavity.",
    "6. The laser of claim 1 wherein said resonant optical cavity is an internal cavity.",
    "7. The laser of claim 6 wherein said internal cavity includes an antiresonant Fabry-Perot saturable absorber.",
    "8. The laser of claim 7 further comprising a pair of diffraction Bragg reflectors disposed within said internal cavity and wherein said antiresonant Fabry-Perot saturable absorber is disposed between said pair of diffraction Bragg reflectors.",
    "9. The laser of claim 7 further comprising an inclined monolithic mirror to direct light to said antiresonant Fabry-Perot saturable absorber within said internal cavity.",
    "10. The laser of claim 8 further comprising an inclined monolithic mirror to direct light to said antiresonant Fabry-Perot saturable absorber disposed between said pair of diffraction Bragg reflectors within said internal cavity.",
    "11. The laser of claim 7 wherein further comprising a basal substrate, said antiresonant Fabry-Perot saturable absorber being disposed on said substrate and said semiconductor laser being disposed on said antiresonant Fabry-Perot saturable absorber.",
    "12. The laser of claim 7 wherein further comprising a basal substrate, said semiconductor laser being disposed on said substrate and said antiresonant Fabry-Perot saturable absorber being disposed on said semiconductor laser.",
    "13. The laser of claim 1 where said saturable Bragg reflector is comprised of substrate, a Bragg stack disposed on said substrate and a multiple quantum well disposed on said Bragg stack.",
    "14. The laser of claim 13 where said substrate is composed of GaAs, said Bragg stack is comprised of multiple layers of GaAs/AlAs, and said multiple quantum well is comprised of multiple layers of InGaAs/InGaAsP.",
    "15. The laser of claim 1 further comprising a dispersive optic fiber optically coupled to said semiconductor laser for receiving and transmitting output therefrom to reduce frequency chirp.",
    "16. The laser of claim 15 wherein said optic fiber has a length and wherein said length has been selected to minimize pulse width of said output from said semiconductor laser.",
    "17. A laser comprising: a semiconductor buried heterostructure multiple quantum well laser; and an external resonant optical cavity having a saturable Bragg reflector as a reflecting mirror for said external resonant optical cavity.",
    "18. The laser of claim 17 where said saturable Bragg reflector is comprised of substrate, a Bragg stack disposed on said substrate and a multiple quantum well disposed on said Bragg stack.",
    "19. The laser of claim 18 where said substrate is composed of GaAs, said Bragg stack is comprised of multiple layers of GaAs/AlAs, and said multiple quantum well is comprised of multiple layers of InGaAs/InGaAsP.",
    "20. The laser of claim 17 further comprising a dispersive optic fiber optically coupled to said semiconductor laser for receiving and transmitting output therefrom to reduce frequency chirp.",
    "21. A method of generating short laser pulses of less than 1000 femtoseconds in a mode locked laser comprising: providing a semiconductor laser; providing a resonant external optical cavity having a reflecting mirror, said mirror comprising a saturable Bragg reflector; coupling said resonant optical cavity in alignment with said semiconductor laser; adjusting external cavity alignment, reverse-bias voltage of an on-chip saturable absorber in said semiconductor laser, and forward gain currents of a gain section in said semiconductor laser to obtain a stable optical pulse output; and biasing said forward gain currents and reverse-bias voltage to minimize pulse width of said stable optical pulse output."
  ],
  "description_excerpt": "1. Field of the Invention\n\nThe invention relates to semiconductor lasers and in particular to mode locked semiconductor lasers having an external resonant cavity.\n\n2. Description of the Prior Art\n\nUltrashort optical pulses have found broad applications in electrooptic sampling, broad-band submillimeter-wave generation, optical computing, and other areas of optoeletronics. Mode locked semiconductor lasers in particular are compact sources of ultrashort pulses. Passive and hybrid mode locking has been employed to generate sub-picosecond pulses in semiconductor lasers. The saturable absorber used in a passive or hybrid mode locked semiconductor laser needs to satisfy the following requirements: (1) the absorber should saturate faster than the gain media; and (2) the recovery time of the saturable absorber should be faster than that of the gain media.\n\nTwo main kinds of semiconductor saturable absorbers have been investigated for passive mode locking: (1) proton-bombarded semiconductors; and (2) semiconductor quantum wells. The quantum-well absorbers, whose absorption saturation is due to the screening of excitons by free carriers, are very attractive for passive mode locking because they are inexpensive, compact, cover a wide wavelength range, and have fast response time. See, L. R. Brovelli, I. D. Jung, D. Kopf, M. Kamp, M. Moser, F. X. Kartner, and U. Keller, “Selfstarting Soliton Mode locked Ti-Sapphire Laser Using A Thin Semiconductor Saturable Absorber”, Electron. Lett. Vol. 31, pp.287, 1995.",
  "cpc": [
    "H01S 3/1118",
    "H01S 5/026",
    "H01S 5/0265",
    "H01S 5/0601",
    "H01S 5/06253",
    "H01S 5/065",
    "H01S 5/0657",
    "H01S 5/10",
    "H01S 5/1032",
    "H01S 5/1212",
    "H01S 5/141",
    "H01S 5/2022",
    "H01S 5/2027"
  ],
  "ipc": [
    "G02F 1/35",
    "H01S 3/098",
    "H01S 5/06",
    "H01S 5/065",
    "H01S 5/125",
    "H01S 5/14",
    "H01S 5/18",
    "H01S 5/343"
  ],
  "assignees": [
    "University of California San Diego UCSD"
  ],
  "inventors": [
    "Ming C. Wu",
    "Ji-Lin Shen"
  ],
  "filing_date": "1999-06-22",
  "publication_date": "2002-09-10",
  "grant_date": "2002-09-10",
  "priority_date": "1999-06-22",
  "application_number": "US-33845899-A",
  "family_id": "23324892",
  "cited_by_count": 92,
  "citations": [
    "US5257276A",
    "US5509026A",
    "US5701327A"
  ]
}