Patents full text · MLC-0201
CPC subclass H10D
Inorganic electric semiconductor devices
| No. | Publication | Title | Published | Assignee |
|---|---|---|---|---|
| 101 | US5411906A | Method of fabricating auxiliary gate lightly doped drain (AGLDD) structure with dielectric sidewalls | 1995-05-02 | VLSI Technology Inc |
| 102 | US5336638A | Process for manufacturing semiconductor devices | 1994-08-09 | Hitachi Ltd |
| 103 | US3990099A | Planar Trapatt diode | 1976-11-02 | RCA Corp |
| 104 | US3670218A | Monolithic heteroepitaxial microwave tunnel die | 1972-06-13 | North American Rockwell Corp |
104 records in this listing. Patents full text (MLC-0201). Request the full dataset.