Patents full text · MLC-0201
CPC subclass H10D
Inorganic electric semiconductor devices
| No. | Publication | Title | Published | Assignee |
|---|---|---|---|---|
| 1 | US12266660B2 | Memory device having 2-transistor memory cell and access line plate | 2025-04-01 | MICRON TECHNOLOGY INC |
| 2 | US12230617B2 | Display device using micro-LED, and manufacturing method therefor | 2025-02-18 | LG ELECTRONICS INC |
| 3 | US11088182B2 | Method for transferring light emitting elements, display panel, method for making display panel, and substrate | 2021-08-10 | CENTURY TECH SHENZHEN CORPORATION LIMITED |
| 4 | US10367080B2 | Method of forming a germanium oxynitride film | 2019-07-30 | ASM IP HOLDING BV |
| 5 | US10332747B1 | Selective titanium nitride deposition using oxides of lanthanum masks | 2019-06-25 | GLOBALFOUNDRIES INC |
| 6 | US10290508B1 | Method for forming vertical spacers for spacer-defined patterning | 2019-05-14 | ASM IP HOLDING BV |
| 7 | US10217678B2 | Display device and method of manufacturing the display device | 2019-02-26 | INNOLUX CORP |
| 8 | US9865602B2 | Semiconductor devices having bit lines and method of fabricating the same | 2018-01-09 | SAMSUNG ELECTRONICS CO LTD |
| 9 | US9799736B1 | High acceptor level doping in silicon germanium | 2017-10-24 | IBM |
| 10 | US9741847B2 | Methods of forming a contact structure for a vertical channel semiconductor device and the resulting device | 2017-08-22 | GLOBALFOUNDRIES INC |
| 11 | US9640715B2 | Printable inorganic semiconductor structures | 2017-05-02 | X CELEPRINT LTD |
| 12 | US9450086B2 | Semiconductor device | 2016-09-20 | RENESAS ELECTRONICS CORP |
| 13 | US9281277B2 | Methods of forming wiring structures | 2016-03-08 | SAMSUNG ELECTRONICS CO LTD |
| 14 | US9117940B2 | Optical systems fabricated by printing-based assembly | 2015-08-25 | UNIV ILLINOIS |
| 15 | US2015179640A1 | Common fabrication of different semiconductor devices with different threshold voltages | 2015-06-25 | GLOBALFOUNDRIES INC |
| 16 | US8779502B2 | Nonvolatile semiconductor memory | 2014-07-15 | SAKUMA KIWAMU |
| 17 | US8710580B2 | Semiconductor device and method of manufacturing the same | 2014-04-29 | SAKUMA KIWAMU |
| 18 | US8367528B2 | Cyclical epitaxial deposition and etch | 2013-02-05 | ASM INC |
| 19 | US2012032311A1 | Multi component dielectric layer | 2012-02-09 | GATES STEPHEN M |
| 20 | US8076230B2 | Method of forming self-aligned contacts and local interconnects | 2011-12-13 | WEI AN CHYI |
| 21 | US8071452B2 | Atomic layer deposition of hafnium lanthanum oxides | 2011-12-06 | RAISANEN PETRI I |
| 22 | US2011263115A1 | Nmos metal gate materials, manufacturing methods, and equipment using cvd and ald processes with metal based precursors | 2011-10-27 | APPLIED MATERIALS INC |
| 23 | US8039895B2 | Transistors having a channel region between channel-portion holes and methods of forming the same | 2011-10-18 | SAMSUNG ELECTRONICS CO LTD |
| 24 | US7982296B2 | Methods and devices for fabricating and assembling printable semiconductor elements | 2011-07-19 | UNIV ILLINOIS |
| 25 | US7932123B2 | Release strategies for making transferable semiconductor structures, devices and device components | 2011-04-26 | UNIV ILLINOIS |
| 26 | US7795160B2 | ALD of metal silicate films | 2010-09-14 | ASM INC |
| 27 | US2010213594A1 | Semiconductor device and a manufacturing method of the same | 2010-08-26 | RENESAS TECH CORP |
| 28 | US7575968B2 | Inverse slope isolation and dual surface orientation integration | 2009-08-18 | FREESCALE SEMICONDUCTOR INC |
| 29 | US2009095956A1 | Single-crystal silicon substrate, soi substrate, semiconductor device, display device, and manufacturing method of semiconductor device | 2009-04-16 | TAKAFUJI YUTAKA |
| 30 | US7511382B2 | Semiconductor chip arrangement and method | 2009-03-31 | INFINEON TECHNOLOGIES AG |
| 31 | US2007173007A1 | Semiconductor device and method for fabricating the same | 2007-07-26 | HYNIX SEMICONDUCTOR INC |
| 32 | US2007029577A1 | Field effect transistor and method of manufacturing the same | 2007-02-08 | TOSHIBA KK |
| 33 | US2006151203A1 | Encapsulated electronic component and production method | 2006-07-13 | KRUEGER HANS |
| 34 | US2005253218A1 | High voltage gate driver integrated circuit including high voltage junction capacitor and high voltage LDMOS transistor | 2005-11-17 | JEON CHANG-KI |
| 35 | US2005170554A1 | Multi-layer inductor formed in a semiconductor substrate and having a core of ferromagnetic material | 2005-08-04 | |
| 36 | US2004241981A1 | Structure and method to fabricate ultra-thin si channel devices | 2004-12-02 | IBM |
| 37 | US6788507B2 | Electrostatic discharge protection circuit | 2004-09-07 | UNITED MICROELECTRONICS CORP |
| 38 | US6740901B2 | Production of semiconductor integrated circuit | 2004-05-25 | RENESAS TECH CORP |
| 39 | US6683663B1 | Web fabrication of devices | 2004-01-27 | ALIEN TECHNOLOGY CORP |
| 40 | US6664129B2 | Integrated circuits and methods for their fabrication | 2003-12-16 | TRI SI TECHNOLOGIES INC |
| 41 | US6570253B1 | Multi-layer film for a thin film structure and a capacitor using the same | 2003-05-27 | SAMSUNG ELECTRONICS CO LTD |
| 42 | US6566204B1 | Use of mask shadowing and angled implantation in fabricating asymmetrical field-effect transistors | 2003-05-20 | NAT SEMICONDUCTOR CORP |
| 43 | US6534395B2 | Method of forming graded thin films using alternating pulses of vapor phase reactants | 2003-03-18 | ASM MICROCHEMISTRY OY |
| 44 | US6498107B1 | Interface control for film deposition by gas-cluster ion-beam processing | 2002-12-24 | EPION CORP |
| 45 | US6452226B2 | Non-volatile semiconductor memory device and manufacturing method thereof | 2002-09-17 | MITSUBISHI ELECTRIC CORP |
| 46 | US6424028B1 | Semiconductor devices configured to tolerate connection misalignment | 2002-07-23 | KONINKL PHILIPS ELECTRONICS NV |
| 47 | US6287964B1 | Method for forming a metallization layer of a semiconductor device | 2001-09-11 | HYUNDAI ELECTRONICS IND |
| 48 | US6180977B1 | Self-aligned edge implanted cell to reduce leakage current and improve program speed in split-gate flash | 2001-01-30 | TAIWAN SEMICONDUCTOR MFG |
| 49 | US6023074A | Active matrix display having storage capacitor associated with each pixel transistor | 2000-02-08 | SEMICONDUTOR ENERGY LAB CO LTD |
| 50 | US5858819A | Fabrication method for a thin film semiconductor device, the thin film semiconductor device itself, liquid crystal display, and electronic device | 1999-01-12 | SEIKO EPSON CORP |
| 51 | US5476810A | Manufacture of electronic devices comprising thin-film circuits using a metal foil as a temporary support | 1995-12-19 | PHILIPS CORP |
| 52 | US5411906A | Method of fabricating auxiliary gate lightly doped drain (AGLDD) structure with dielectric sidewalls | 1995-05-02 | VLSI TECHNOLOGY INC |
| 53 | US5336638A | Process for manufacturing semiconductor devices | 1994-08-09 | HITACHI LTD |
| 54 | US3990099A | Planar Trapatt diode | 1976-11-02 | RCA CORP |
| 55 | US3670218A | Monolithic heteroepitaxial microwave tunnel die | 1972-06-13 | NORTH AMERICAN ROCKWELL |
55 records in this listing. Patents full text (MLC-0201). Request the full dataset.