Patent · US10181483B2 · B2 · US

Laser assisted transfer welding process

(11) Publication number

US10181483B2

(21) Application number

14/879,581

(22) Filing date

2015-10-09

(30) Priority date

2010-03-29

(43) Publication date

2019-01-15

(45) Date of grant

2019-01-15

(51) IPC

H01L 23/00; H01L 21/78; H01S 5/02315; H01L 21/683; H01L 21/768; H01L 23/48; H01L 23/544; H01L 27/00; H01L 27/12; H01L 27/146; H01L 31/0203; H01L 31/043; H01L 31/048; H01L 31/18; H05K 1/18; H05K 13/04

(52) CPC

H10D Inorganic electric semiconductor devices: 86/0214, 86/40, 86/60
H01L Semiconductor devices; electric solid state devices not otherwise provided for: 21/6835, 21/76898, 21/7806, 2221/68318, 2221/68322, 2221/6835, 2221/68368, 2221/68372, 2221/68381, 2223/5442, 2223/54426, 2223/54486, 2224/02371, 2224/02372, 2224/0239, 2224/04026, 2224/05548, 2224/056, 2224/08238, 2224/13111, 2224/24011, 2224/24137, 2224/24147, 2224/24226, 2224/245, 2224/24998, 2224/2731, 2224/29078, 2224/291, 2224/29101, 2224/29111, 2224/2919, 2224/2929, 2224/29344, 2224/3012, 2224/32104, 2224/32146, 2224/32227, 2224/73267, 2224/75263, 2224/75314, 2224/7598, 2224/76155, 2224/80203, 2224/80224, 2224/82007, 2224/821, 2224/82102, 2224/82106, 2224/83093, 2224/83121, 2224/83132, 2224/83191, 2224/83192, 2224/83224, 2224/83805, 2224/83815, 2224/8384, 2224/83851, 2224/83855, 2224/83859, 2224/83862, 2224/83868, 2224/83871, 2224/83874, 2224/92244, 2224/9512, 2224/97, 23/481, 23/544, 24/02, 24/05, 24/08, 24/24, 24/27, 24/29, 24/30, 24/32, 24/73, 24/75, 24/799, 24/82, 24/83, 24/92, 24/94, 24/97, 24/98, 27/1214, 27/1266, 27/14618, 2924/00, 2924/00014, 2924/01005, 2924/01006, 2924/01013, 2924/01023, 2924/01029, 2924/01032, 2924/01033, 2924/01047, 2924/01049, 2924/0105, 2924/01057, 2924/01075, 2924/01079, 2924/01082, 2924/0132, 2924/01322, 2924/0133, 2924/014, 2924/10329, 2924/12041, 2924/12044, 2924/14, 2924/15787, 31/0203, 31/043, 31/048, 31/1892
H01S Devices using the process of light amplification by stimulated emission of radiation [laser] to amplify or generate light; devices using stimulated emission of electromagnetic radiation in wave ranges other than optical: 5/02236, 5/02276, 5/02315, 5/0233, 5/02345, 5/0235
H05K Printed circuits; casings or constructional details of electric apparatus; manufacture of assemblages of electrical components: 1/18, 13/04, 13/046
H10F Inorganic semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation: 19/40, 19/80, 39/804, 71/139, 77/50
H10P Generic processes or apparatus for the manufacture or treatment of devices covered by class H10: 72/74, 72/7412, 72/7414, 72/7426, 72/7434, 72/7436, 72/744, 95/11
H10W Generic packages, interconnections, connectors or other constructional details of devices covered by class H10: 20/023, 20/20, 46/00, 46/101, 46/301, 46/607, 70/093, 70/099, 70/60, 70/65, 70/66, 72/01323, 72/0198, 72/071, 72/0711, 72/07131, 72/07141, 72/073, 72/07323, 72/07331, 72/07335, 72/07336, 72/07338, 72/07341, 72/07354, 72/074, 72/324, 72/325, 72/344, 72/348, 72/352, 72/354, 72/59, 72/874, 72/922, 72/952, 80/334, 80/338, 90/00, 90/10, 90/22, 90/732, 90/734, 90/794
Y02E Reduction of greenhouse gas [ghg] emissions, related to energy generation, transmission or distribution: 10/50
Y10T Technical subjects covered by former us classification: 29/49124, 29/51

(73) Assignee

X Celeprint Ltd; University of Illinois System

(72) Inventors

Etienne Menard; Matthew Meitl; John A. Rogers

(54) Title

Laser assisted transfer welding process

(57) Abstract

A method of printing transferable components includes pressing a stamp including at least one transferable semiconductor component thereon on a target substrate such that the at least one transferable component and a surface of the target substrate contact opposite surfaces of a conductive eutectic layer. During pressing of the stamp on the target substrate, the at least one transferable component is exposed to electromagnetic radiation that is directed through the transfer stamp to reflow the eutectic layer. The stamp is then separated from the target substrate to delaminate the at least one transferable component from the stamp and print the at least one transferable component onto the surface of the target substrate. Related systems and methods are also discussed.

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Claims (16)

A method of printing transferable components, the method comprising: providing a eutectic layer comprising a conductive material on a surface of a target substrate; providing a transfer stamp having front and back opposing sides and a plurality of protruding posts extending from the front side that uses kinetic or shear assisted control of adhesion to transfer arrays of semiconductor dies from a source wafer to a target substrate; providing two or more transferable semiconductor components on a source wafer, wherein the two or more transferable semiconductor components comprise two or more semiconductor dies; pressing two or more posts of the plurality of protruding posts against the two or more transferable semiconductor components on the source wafer to adhere the two or more transferable semiconductor components to the two or more posts of the transfer stamp, respectively; pressing the two or more posts with the two or more transferable semiconductor components against the eutectic layer on a side of the eutectic layer opposite the target substrate; during pressing of the two or more posts on the target substrate, exposing the two or more transferable semiconductor components to electromagnetic radiation directed through the two or more posts to reflow the eutectic layer; and then separating the two or more posts from the target substrate to delaminate the two or more transferable semiconductor components from the transfer stamp and print the two or more transferable semiconductor components onto the surface of the target substrate, wherein pressing the stamp includes applying external pressure to the back side of the stamp.
The method of claim 1, wherein the target substrate has a non-planar surface and the eutectic layer reflows to provide a substantially planar surface to which the transferable component is bonded.
The method of claim 1, wherein the target substrate is at least one of a non-planar substrate, an unpolished ceramic substrate, an unpolished polysilicon substrate, an unpolished metal substrate, a printed circuit board, and a plastic substrate.
The method of claim 1, wherein the eutectic layer is a self-planarizing layer.
The method of claim 1, wherein at least one of the opposite surfaces of the eutectic layer is non-planar.
The method of claim 1, wherein the transfer stamp includes a transparent portion that is at least partially aligned in plan view with the two or more transferable semiconductor components.
The method of claim 1, wherein the electromagnetic radiation is laser radiation.
The method of claim 1, the method further comprising selectively exposing some but not all of the two or more transferable semiconductor components to the electromagnetic radiation and delaminating from the transfer stamp only the exposed transferable semiconductor components.
The method of claim 1, wherein the eutectic layer is a multi-layer stack including at least two different layers.
The method of claim 1, wherein the eutectic layer has a first portion on the surface of the target substrate comprising a first eutectic stack and a second portion on the surface of the target substrate different from the first portion comprising a second eutectic stack different from the first eutectic stack, wherein the second portion is between respective ones of the two or more transferable semiconductor components and the target substrate, and wherein the first portion is adjacent to the second portion, and the first eutectic stack forms a bond between a semiconductor component and the target substrate.
The method of claim 10, further comprising selectively exposing to electromagnetic radiation the first eutectic stack to reflow the first eutectic stack without reflowing the second eutectic stack.
The method of claim 10, wherein the first eutectic stack has a higher melting temperature than the second eutectic stack.
The method of claim 10, wherein the first eutectic stack includes a metal alloy and the second eutectic stack includes a metal-semiconductor alloy.
The method of claim 1, further comprising identifying at least one of the two or more transferable semiconductor components as defective and other transferable semiconductor components as functional and selectively exposing the functional transferable semiconductor components of the two or more transferable semiconductor components to the electromagnetic radiation and delaminating from the stamp only the functional transferable semiconductor components.
The method of claim 1, wherein the eutectic layer provides an electrical connection between respective ones of the two or more transferable semiconductor components and a metal interconnection line on the target substrate.
The method of claim 1, wherein the two or more transferable semiconductor components comprise one or more metal fingers protruding from a surface thereof and the eutectic layer on the target substrate is in contact with the metal fingers during pressing of the transfer stamp on the target substrate.

Description

This invention is in the general field of wafer scale semiconductor processing and packaging solutions. More specifically, this invention pertains to the parallel assembly of an ultra-thin die array that is released from a source wafer and then selectively bonded onto a target substrate.

Transfer printing processes typically rely on the use of kinetic or shear assisted control of adhesion of transfer stamps to transfer arrays of ultra-thin semiconductor dies onto target substrates, which are typically coated with polymeric adhesive layers. When the surface of the target substrate is relatively smooth, as with polished semiconductor wafers or ultra-flat glass substrates, high transfer printing yields can be achieved without an adhesive layer. However, when the roughness of the target substrate is too high to permit high transfer yields, or too high to provide for the formation of a reliable chemically bonded interface, polymeric adhesive layers can be used.

However, the typically low thermal transport and high coefficient of thermal expansion properties of polymeric adhesive layers can limit the performance or long term reliability of certain classes of semiconductor transfer-printable devices, such as solar cells, light emitting diodes, laser diodes, transistors, and/or integrated circuits. In addition, the electrical insulation properties of polymeric adhesive layers may not permit the formation of electrical contacts at the bonded interface. Thus, further processing steps are typically necessary to deposit and pattern metal interconnection lines over the surface of transfer printed semiconductor dies.

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Record as JSON

{
  "publication_number": "US10181483B2",
  "country": "US",
  "kind": "B2",
  "title": "Laser assisted transfer welding process",
  "abstract": "A method of printing transferable components includes pressing a stamp including at least one transferable semiconductor component thereon on a target substrate such that the at least one transferable component and a surface of the target substrate contact opposite surfaces of a conductive eutectic layer. During pressing of the stamp on the target substrate, the at least one transferable component is exposed to electromagnetic radiation that is directed through the transfer stamp to reflow the eutectic layer. The stamp is then separated from the target substrate to delaminate the at least one transferable component from the stamp and print the at least one transferable component onto the surface of the target substrate. Related systems and methods are also discussed.",
  "claims": [
    "1. A method of printing transferable components, the method comprising: providing a eutectic layer comprising a conductive material on a surface of a target substrate; providing a transfer stamp having front and back opposing sides and a plurality of protruding posts extending from the front side that uses kinetic or shear assisted control of adhesion to transfer arrays of semiconductor dies from a source wafer to a target substrate; providing two or more transferable semiconductor components on a source wafer, wherein the two or more transferable semiconductor components comprise two or more semiconductor dies; pressing two or more posts of the plurality of protruding posts against the two or more transferable semiconductor components on the source wafer to adhere the two or more transferable semiconductor components to the two or more posts of the transfer stamp, respectively; pressing the two or more posts with the two or more transferable semiconductor components against the eutectic layer on a side of the eutectic layer opposite the target substrate; during pressing of the two or more posts on the target substrate, exposing the two or more transferable semiconductor components to electromagnetic radiation directed through the two or more posts to reflow the eutectic layer; and then separating the two or more posts from the target substrate to delaminate the two or more transferable semiconductor components from the transfer stamp and print the two or more transferable semiconductor components onto the surface of the target substrate, wherein pressing the stamp includes applying external pressure to the back side of the stamp.",
    "2. The method of claim 1, wherein the target substrate has a non-planar surface and the eutectic layer reflows to provide a substantially planar surface to which the transferable component is bonded.",
    "3. The method of claim 1, wherein the target substrate is at least one of a non-planar substrate, an unpolished ceramic substrate, an unpolished polysilicon substrate, an unpolished metal substrate, a printed circuit board, and a plastic substrate.",
    "4. The method of claim 1, wherein the eutectic layer is a self-planarizing layer.",
    "5. The method of claim 1, wherein at least one of the opposite surfaces of the eutectic layer is non-planar.",
    "6. The method of claim 1, wherein the transfer stamp includes a transparent portion that is at least partially aligned in plan view with the two or more transferable semiconductor components.",
    "7. The method of claim 1, wherein the electromagnetic radiation is laser radiation.",
    "8. The method of claim 1, the method further comprising selectively exposing some but not all of the two or more transferable semiconductor components to the electromagnetic radiation and delaminating from the transfer stamp only the exposed transferable semiconductor components.",
    "9. The method of claim 1, wherein the eutectic layer is a multi-layer stack including at least two different layers.",
    "10. The method of claim 1, wherein the eutectic layer has a first portion on the surface of the target substrate comprising a first eutectic stack and a second portion on the surface of the target substrate different from the first portion comprising a second eutectic stack different from the first eutectic stack, wherein the second portion is between respective ones of the two or more transferable semiconductor components and the target substrate, and wherein the first portion is adjacent to the second portion, and the first eutectic stack forms a bond between a semiconductor component and the target substrate.",
    "11. The method of claim 10, further comprising selectively exposing to electromagnetic radiation the first eutectic stack to reflow the first eutectic stack without reflowing the second eutectic stack.",
    "12. The method of claim 10, wherein the first eutectic stack has a higher melting temperature than the second eutectic stack.",
    "13. The method of claim 10, wherein the first eutectic stack includes a metal alloy and the second eutectic stack includes a metal-semiconductor alloy.",
    "14. The method of claim 1, further comprising identifying at least one of the two or more transferable semiconductor components as defective and other transferable semiconductor components as functional and selectively exposing the functional transferable semiconductor components of the two or more transferable semiconductor components to the electromagnetic radiation and delaminating from the stamp only the functional transferable semiconductor components.",
    "15. The method of claim 1, wherein the eutectic layer provides an electrical connection between respective ones of the two or more transferable semiconductor components and a metal interconnection line on the target substrate.",
    "16. The method of claim 1, wherein the two or more transferable semiconductor components comprise one or more metal fingers protruding from a surface thereof and the eutectic layer on the target substrate is in contact with the metal fingers during pressing of the transfer stamp on the target substrate."
  ],
  "description_excerpt": "This invention is in the general field of wafer scale semiconductor processing and packaging solutions. More specifically, this invention pertains to the parallel assembly of an ultra-thin die array that is released from a source wafer and then selectively bonded onto a target substrate.\n\nTransfer printing processes typically rely on the use of kinetic or shear assisted control of adhesion of transfer stamps to transfer arrays of ultra-thin semiconductor dies onto target substrates, which are typically coated with polymeric adhesive layers. When the surface of the target substrate is relatively smooth, as with polished semiconductor wafers or ultra-flat glass substrates, high transfer printing yields can be achieved without an adhesive layer. However, when the roughness of the target substrate is too high to permit high transfer yields, or too high to provide for the formation of a reliable chemically bonded interface, polymeric adhesive layers can be used.\n\nHowever, the typically low thermal transport and high coefficient of thermal expansion properties of polymeric adhesive layers can limit the performance or long term reliability of certain classes of semiconductor transfer-printable devices, such as solar cells, light emitting diodes, laser diodes, transistors, and/or integrated circuits. In addition, the electrical insulation properties of polymeric adhesive layers may not permit the formation of electrical contacts at the bonded interface. Thus, further processing steps are typically necessary to deposit and pattern metal interconnection lines over the surface of transfer printed semiconductor dies.",
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  "assignees": [
    "X Celeprint Ltd",
    "University of Illinois System"
  ],
  "inventors": [
    "Etienne Menard",
    "Matthew Meitl",
    "John A. Rogers"
  ],
  "filing_date": "2015-10-09",
  "publication_date": "2019-01-15",
  "grant_date": "2019-01-15",
  "priority_date": "2010-03-29",
  "application_number": "US-201514879581-A",
  "family_id": "47633571",
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