Patent · US7982296B2 · B2 · US

Methods and devices for fabricating and assembling printable semiconductor elements

(11) Publication number

US7982296B2

(21) Application number

US-56456609-A

(22) Filing date

2009-09-22

(30) Priority date

2004-06-04

(43) Publication date

2011-07-19

(45) Date of grant

2011-07-19

(52) CPC

B82Y Specific uses or applications of nanostructures; measurement or analysis of nanostructures; manufacture or treatment of nanostructures: 10/00
B81C Processes or apparatus specially adapted for the manufacture or treatment of microstructural devices or systems: 2201/0185
H10D Inorganic electric semiconductor devices: 30/675, 30/6757, 30/6758, 48/36, 62/10, 62/118, 62/121, 62/122, 62/123, 62/40, 62/81, 86/0229, 86/0241, 86/40, 86/60
H10F Inorganic semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation: 71/00, 71/121, 71/128, 71/1395, 77/169, 77/1698
H10H Inorganic light-emitting semiconductor devices having potential barriers: 20/01335, 20/018, 20/825
H10P Generic processes or apparatus for the manufacture or treatment of devices covered by class H10: 14/265, 14/3402, 14/3462, 36/00, 50/691, 72/74, 72/7434, 72/744
H10W Generic packages, interconnections, connectors or other constructional details of devices covered by class H10: 72/019, 72/01923, 72/01938, 72/01951, 72/01953, 72/0198, 72/073, 72/07307, 72/07323, 72/07337, 72/07338, 72/354, 72/923, 72/932, 72/952, 76/10, 80/163, 80/211, 80/312, 90/00, 90/734, 90/794, 99/00
Y02E Reduction of greenhouse gas [ghg] emissions, related to energy generation, transmission or distribution: 10/547
Y02P Climate change mitigation technologies in the production or processing of goods: 70/50
Y10S Technical subjects covered by former uspc cross-reference art collections [xracs] and digests: 977/707, 977/724

(73) Assignee

UNIV ILLINOIS

(54) Title

Methods and devices for fabricating and assembling printable semiconductor elements

(57) Abstract

The invention provides methods and devices for fabricating printable semiconductor elements and assembling printable semiconductor elements onto substrate surfaces. Methods, devices and device components of the present invention are capable of generating a wide range of flexible electronic and optoelectronic devices and arrays of devices on substrates comprising polymeric materials. The present invention also provides stretchable semiconductor structures and stretchable electronic devices capable of good performance in stretched configurations.

Full text

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Claims (9)

An electrical device comprising: a first electrode; a second electrode; and a printable semiconductor element positioned in electrical contact with said first and second electrodes, said printable semiconductor element comprising a unitary inorganic semiconductor structure having at least one cross sectional dimension greater than or equal to about 500 nanometers.
The electrical device of claim 1 wherein said unitary inorganic semiconductor structure has thickness greater than or equal to about 10 nanometers, a width greater than or equal to about 100 nanometers and a length greater than or equal to about 1 micron.
The electrical device of claim 1 wherein said unitary inorganic semiconductor structure has a thickness selected from the range of about 10 nanometers to about 100 microns, a width selected from the range of about 100 nanometers to about 1 millimeter and a length selected from the range of about 1 micron to about 1 millimeter.
The electrical device of claim 1 wherein said unitary inorganic semiconductor structure has a ratio of length to width equal to or less than about 10.
The electrical device of claim 1 wherein said unitary inorganic semiconductor structure has a ratio of length to width equal to or less than about 1.5.
The electrical device of claim 1 wherein said unitary inorganic semiconductor structure has a ratio of thickness to width equal to or less than about 0.1.
The electrical device of claim 1 wherein said printable semiconductor element comprises a microstructured printable semiconductor element or a nanostructured printable semiconductor element.
The electrical device of claim 1 wherein said printable semiconductor element has a shape selected from the group consisting of a ribbon; a platelet; a column; a cylinder; a disc; and a block.
The electrical device of claim 1 further comprising at least one additional printable semiconductor element, wherein additional printable semiconductor elements are in electrical contact with said first and second electrodes.

Citations (197)

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Record as JSON

{
  "publication_number": "US7982296B2",
  "country": "US",
  "kind": "B2",
  "title": "Methods and devices for fabricating and assembling printable semiconductor elements",
  "abstract": "The invention provides methods and devices for fabricating printable semiconductor elements and assembling printable semiconductor elements onto substrate surfaces. Methods, devices and device components of the present invention are capable of generating a wide range of flexible electronic and optoelectronic devices and arrays of devices on substrates comprising polymeric materials. The present invention also provides stretchable semiconductor structures and stretchable electronic devices capable of good performance in stretched configurations.",
  "claims": [
    "1. An electrical device comprising: a first electrode; a second electrode; and a printable semiconductor element positioned in electrical contact with said first and second electrodes, said printable semiconductor element comprising a unitary inorganic semiconductor structure having at least one cross sectional dimension greater than or equal to about 500 nanometers.",
    "2. The electrical device of claim 1 wherein said unitary inorganic semiconductor structure has thickness greater than or equal to about 10 nanometers, a width greater than or equal to about 100 nanometers and a length greater than or equal to about 1 micron.",
    "3. The electrical device of claim 1 wherein said unitary inorganic semiconductor structure has a thickness selected from the range of about 10 nanometers to about 100 microns, a width selected from the range of about 100 nanometers to about 1 millimeter and a length selected from the range of about 1 micron to about 1 millimeter.",
    "4. The electrical device of claim 1 wherein said unitary inorganic semiconductor structure has a ratio of length to width equal to or less than about 10.",
    "5. The electrical device of claim 1 wherein said unitary inorganic semiconductor structure has a ratio of length to width equal to or less than about 1.5.",
    "6. The electrical device of claim 1 wherein said unitary inorganic semiconductor structure has a ratio of thickness to width equal to or less than about 0.1.",
    "7. The electrical device of claim 1 wherein said printable semiconductor element comprises a microstructured printable semiconductor element or a nanostructured printable semiconductor element.",
    "8. The electrical device of claim 1 wherein said printable semiconductor element has a shape selected from the group consisting of a ribbon; a platelet; a column; a cylinder; a disc; and a block.",
    "9. The electrical device of claim 1 further comprising at least one additional printable semiconductor element, wherein additional printable semiconductor elements are in electrical contact with said first and second electrodes."
  ],
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