Method for manufacturing semiconductor device

{
  "publication_number": "US2009111244A1",
  "country": "US",
  "kind": "A1",
  "title": "Method for manufacturing semiconductor device",
  "abstract": "A single crystal semiconductor substrate is irradiated with ions that are generated by exciting a hydrogen gas and are accelerated with an ion doping apparatus, thereby forming a damaged region that contains a large amount of hydrogen. After the single crystal semiconductor substrate and a supporting substrate are bonded, the single crystal semiconductor substrate is heated to be separated along the damaged region. While a single crystal semiconductor layer separated from the single crystal semiconductor substrate is heated, this single crystal semiconductor layer is irradiated with a laser beam. The single crystal semiconductor layer undergoes re-single-crystallization by being melted through laser beam irradiation, thereby recovering its crystallinity and planarizing the surface of the single crystal semiconductor layer.",
  "claims": [
    "1. A method for manufacturing a semiconductor device, comprising the steps of: irradiating a single crystal semiconductor substrate with ions that are accelerated with an ion doping apparatus to form a damaged region in a region at a predetermined depth from a surface of the single crystal semiconductor substrate; forming a buffer layer over at least one of a supporting substrate and the single crystal semiconductor substrate; disposing the supporting substrate and the single crystal semiconductor substrate in contact with each other with the buffer layer interposed between the supporting substrate and the single crystal semiconductor substrate to bond the supporting substrate and the single crystal semiconductor substrate to each other; causing a crack in the damaged region by heating the single crystal semiconductor substrate to separate the single crystal semiconductor substrate from the supporting substrate, thereby forming a supporting substrate to which a single crystal semiconductor layer that is separated from the single crystal semiconductor substrate is fixed; and irradiating the single crystal semiconductor layer fixed to the supporting substrate with a laser beam while heating the single crystal semiconductor layer to melt the single crystal semiconductor layer, thereby performing re-single-crystallization of the single crystal semiconductor layer.",
    "2. The method for manufacturing a semiconductor device according to claim 1, wherein a surface and a vicinity of the surface of a region irradiated with the laser beam in the single crystal semiconductor layer are melted by irradiating the single crystal semiconductor layer with the laser beam while heating the single crystal semiconductor layer.",
    "3. The method for manufacturing a semiconductor device according to claim 1, wherein a part of the single crystal semiconductor layer in a depth direction of a region irradiated with the laser beam is melted by irradiating the single crystal semiconductor layer with the laser beam while heating the single crystal semiconductor layer.",
    "4. The method for manufacturing a semiconductor device according to claim 1, wherein a region irradiated with the laser beam in the single crystal semiconductor layer is melted entirely in a depth direction by irradiating the single crystal semiconductor layer with the laser beam while heating the single crystal semiconductor layer.",
    "5. The method for manufacturing a semiconductor device according to claim 1, wherein the single crystal semiconductor layer is heated at a temperature equal to or higher than 400° C. and equal to or lower than a strain point of the supporting substrate when the single crystal semiconductor layer is irradiated with the laser beam.",
    "6. The method for manufacturing a semiconductor device according to claim 1, wherein the single crystal semiconductor layer is heated at a temperature equal to or higher than 400° C. and equal to or lower than 650° C. when the single crystal semiconductor layer is irradiated with the laser beam.",
    "7. The method for manufacturing a semiconductor device according to claim 1, wherein the single crystal semiconductor layer is melted for 200 nanoseconds to 1000 nanoseconds by being irradiated with the laser beam.",
    "8. The method for manufacturing a semiconductor device according to claim 1, wherein the single crystal semiconductor layer fixed to the supporting substrate is irradiated with the laser beam while the supporting substrate to which the single crystal semiconductor layer is fixed is heated at a temperature equal to or higher than 400° C. and equal to or lower than a strain point of the supporting substrate.",
    "9. The method for manufacturing a semiconductor device according to claim 1, wherein the single crystal semiconductor layer fixed to the supporting substrate is irradiated with the laser beam while the supporting substrate to which the single crystal semiconductor layer is fixed is heated at a temperature equal to or higher than 450° C. and equal to or lower than 650° C.",
    "10. The method for manufacturing a semiconductor device according to claim 1 wherein the single crystal semiconductor layer is irradiated with the laser beam in an inert gas atmosphere.",
    "11. The method for manufacturing a semiconductor device according to claim 10, wherein the inert gas is a nitrogen gas or a noble gas.",
    "12. The method for manufacturing a semiconductor device according to claim 10, wherein the inert gas has a concentration of an oxygen gas of 30 ppm or less.",
    "13. The method for manufacturing a semiconductor device according to claim 1, wherein the damaged region is formed by exciting a hydrogen gas to generate a plasma including H 3 + and by irradiating the single crystal semiconductor substrate with ions that are included in the plasma and accelerated.",
    "14. The method for manufacturing a semiconductor device according to claim 1, wherein the supporting substrate has a strain point of 650° C. to 690° C.",
    "15. The method for manufacturing a semiconductor device according to claim 1, wherein the supporting substrate is a glass substrate.",
    "16. The method for manufacturing a semiconductor device according to claim 1, wherein the supporting substrate is one of a non-alkali glass substrate (product name: AN100), a non-alkali glass substrate (product name: EAGLE2000 (registered trademark)), and a non-alkali glass substrate (product name: EAGLE XG (registered trademark)).",
    "17. The method for manufacturing a semiconductor device according to claim 1, wherein the laser beam has a cross-sectional shape of one of a linear shape, a square shape, and a rectangular shape on an irradiation surface.",
    "18. The method for manufacturing a semiconductor device according to claim 1, wherein the buffer layer has a multilayer structure and comprises an insulating film in contact with the single crystal semiconductor layer, and the insulating film includes a halogen.",
    "19. A method for manufacturing a semiconductor device, comprising the steps of: fixing a single crystal semiconductor layer to a glass substrate with a buffer layer interposed therebetween; and while heating the single crystal semiconductor layer fixed to the glass substrate at a temperature equal to or lower than a strain point of the glass substrate, irradiating a part of the single crystal semiconductor layer with a laser beam to melt an upper portion with leaving a single crystal region in a lower portion, thereby performing re-single-crystallization of the upper portion into a single crystal state having the same crystal orientation as the single crystal region of the lower portion.",
    "20. The method for manufacturing a semiconductor device according to claim 19, wherein the laser beam has a cross-sectional shape of one of a square shape, a rectangular shape, and a linear shape, and wherein the part of the single crystal semiconductor layer is irradiated with the laser beam while the glass substrate to which the single crystal semiconductor layer is fixed is moved.",
    "21. The method for manufacturing a semiconductor device according to claim 19, wherein re-single-crystallization of the melted portion is performed and a defect in the melted portion is recovered by irradiating the single crystal semiconductor layer with the laser beam.",
    "22. The method for manufacturing a semiconductor device according to claim 19, wherein the glass substrate is one of a non-alkali glass substrate (product name: AN100), a non-alkali glass substrate (product name: EAGLE2000 (registered trademark)), and a non-alkali glass substrate (product name: EAGLE XG (registered trademark)).",
    "23. The method for manufacturing a semiconductor device according to claim 19, wherein the buffer layer has a multilayer structure and comprises a barrier layer capable of preventing sodium from entering the single crystal semiconductor layer.",
    "24. The method for manufacturing a semiconductor device according to claim 19, wherein the buffer layer has a multilayer structure and comprises a silicon nitride film or a silicon nitride oxide film.",
    "25. The method for manufacturing a semiconductor device according to claim 19, wherein the buffer layer has a multilayer structure and comprises a bonding layer that is bonded to the glass substrate or the single crystal semiconductor layer.",
    "26. The method for manufacturing a semiconductor device according to claim 19, wherein the buffer layer has a multilayer structure and comprises an oxide film obtained by oxidizing the single crystal semiconductor layer.",
    "27. The method for manufacturing a semiconductor device according to claim 19, wherein the buffer layer has a multilayer structure and comprises a bonding layer that is bonded to the glass substrate or the single crystal semiconductor layer and a barrier layer capable of preventing sodium from entering the single crystal semiconductor layer.",
    "28. The method for manufacturing a semiconductor device according to claim 19, wherein the buffer layer has a multilayer structure and comprises a bonding layer that is bonded to the glass substrate, an insulating film in contact with the single crystal semiconductor layer, and a barrier layer capable of preventing sodium from entering the single crystal semiconductor layer, the barrier layer being formed between the bonding layer and the insulating film.",
    "29. The method for manufacturing a semiconductor device according to claim 28, wherein the insulating film in contact with the single crystal semiconductor layer is a silicon oxide film or a silicon oxynitride film.",
    "30. The method for manufacturing a semiconductor device according to claim 28, wherein the insulating film in contact with the single crystal semiconductor layer is an oxide film obtained by oxidizing the single crystal semiconductor layer.",
    "31. The method for manufacturing a semiconductor device according to claim 28, wherein the barrier layer is a silicon nitride film or a silicon nitride oxide film.",
    "32. The method for manufacturing a semiconductor device according to claim 19, wherein the buffer layer has a multilayer structure and comprises an insulating film in contact with the single crystal semiconductor layer, the insulating film including a halogen.",
    "33. A method for manufacturing a semiconductor device, comprising the steps of: fixing a single crystal semiconductor layer to a glass substrate with a buffer layer interposed therebetween; and while heating the single crystal semiconductor layer fixed to the glass substrate at a temperature equal to or lower than a strain point of the glass substrate, irradiating a part of the single crystal semiconductor layer with a laser beam to melt a region irradiated with the laser beam in the single crystal semiconductor layer, thereby performing re-single-crystallization into a single crystal state having the same crystal orientation as a single crystal state in a region adjacent to the region irradiated with the laser beam.",
    "34. The method for manufacturing a semiconductor device according to claim 33, wherein the laser beam has a cross-sectional shape of one of a square shape, a rectangular shape, and a linear shape on an irradiation surface, and wherein the part of the single crystal semiconductor layer is irradiated with the laser beam while the glass substrate to which the single crystal semiconductor layer is fixed is moved.",
    "35. The method for manufacturing a semiconductor device according to claim 33, wherein re-single-crystallization of the melted portion is performed and a defect in the melted portion is recovered by irradiating the single crystal semiconductor layer with the laser beam.",
    "36. The method for manufacturing a semiconductor device according to claim 33, wherein the glass substrate is one of a non-alkali glass substrate (product name: AN100), a non-alkali glass substrate (product name: EAGLE2000 (registered trademark)), and a non-alkali glass substrate (product name: EAGLE XG (registered trademark)).",
    "37. The method for manufacturing a semiconductor device according to claim 33, wherein the buffer layer has a multilayer structure and comprises a barrier layer capable of preventing sodium from entering the single crystal semiconductor layer.",
    "38. The method for manufacturing a semiconductor device according to claim 33, wherein the buffer layer has a multilayer structure and comprises a silicon nitride film or a silicon nitride oxide film.",
    "39. The method for manufacturing a semiconductor device according to claim 33, wherein the buffer layer has a multilayer structure and comprises a bonding layer that is bonded to the glass substrate or the single crystal semiconductor layer.",
    "40. The method for manufacturing a semiconductor device according to claim 33, wherein the buffer layer has a multilayer structure and comprises an oxide film obtained by oxidizing the single crystal semiconductor layer.",
    "41. The method for manufacturing a semiconductor device according to claim 33, wherein the buffer layer has a multilayer structure and comprises a bonding layer that is bonded to the glass substrate or the single crystal semiconductor layer and a barrier layer capable of preventing sodium from entering the single crystal semiconductor layer.",
    "42. The method for manufacturing a semiconductor device according to claim 33, wherein the buffer layer has a multilayer structure and comprises a bonding layer that is bonded to the glass substrate, an insulating film in contact with the single crystal semiconductor layer, and a barrier layer capable of preventing sodium from entering the single crystal semiconductor layer, the barrier layer being formed between the bonding layer and the insulating film.",
    "43. The method for manufacturing a semiconductor device according to claim 42, wherein the insulating film in contact with the single crystal semiconductor layer is a silicon oxide film or a silicon oxynitride film.",
    "44. The method for manufacturing a semiconductor device according to claim 42, wherein the insulating film in contact with the single crystal semiconductor layer is an oxide film obtained by oxidizing the single crystal semiconductor layer.",
    "45. The method for manufacturing a semiconductor device according to claim 42, wherein the barrier layer is a silicon nitride film or a silicon nitride oxide film.",
    "46. The method for manufacturing a semiconductor device according to claim 33, wherein the buffer layer has a multilayer structure and comprises an insulating film in contact with the single crystal semiconductor layer, the insulating film including a halogen."
  ],
  "description_excerpt": "1. Field of the Invention\n\nThe present invention relates to a method for manufacturing a semiconductor substrate to which a single crystal semiconductor layer is fixed with a buffer layer interposed therebetween and a method for manufacturing a semiconductor device.\n\n2. Description of the Related Art\n\nIn recent years, integrated circuits using a silicon-on-insulator (SOI) substrate instead of a bulk silicon wafer have been developed. A feature of a thin single crystal silicon layer formed over an insulating layer can be taken advantage of to form a completely electrically isolated semiconductor layer of a transistor in an integrated circuit and to form a completely depleted transistor. Accordingly, a semiconductor integrated circuit having high added values such as high integration, high-speed operation, and low power consumption can be realized.\n\nKnown examples of SOI substrates are SIMOX substrates and bonded substrates. For example, an SOI structure of a SIMOX substrate is obtained by implantation of oxygen ions into a single crystal silicon substrate and by heat treatment performed at 1300° C. or higher to form a buried oxide (BOX) layer, whereby a single crystal silicon thin film is formed on the surface.\n\nAn SOI structure of bonded substrates is obtained by bonding of two single crystal silicon substrates (a base substrate and a bond substrate) to each other with an oxide film interposed therebetween and by thinning of one of the single crystal silicon substrates (the bond substrate) on a back side (a side which is opposite to a bonding surface), whereby a single crystal silicon thin film is formed.",
  "cpc": [
    "H10D 86/0214",
    "B23K 26/03",
    "B23K 26/083",
    "B23K 26/12",
    "B23K 26/127",
    "B23K 26/14",
    "H10D 30/0323",
    "H10D 86/40",
    "H10D 86/411",
    "H10D 86/60",
    "H10P 14/20",
    "H10P 34/42",
    "H10P 90/1916",
    "H10P 95/90",
    "H10P 95/906",
    "H10W 10/181"
  ],
  "ipc": [
    "H10P 34/42",
    "H10P 95/00",
    "H10P 95/90"
  ],
  "assignees": [
    "Semiconductor Energy Laboratory Co Ltd"
  ],
  "inventors": [
    "Shunpei Yamazaki",
    "Junpei MOMO",
    "Fumito Isaka",
    "Eiji Higa",
    "Masaki Koyama",
    "Akihisa Shimomura"
  ],
  "filing_date": "2008-10-07",
  "publication_date": "2009-04-30",
  "priority_date": "2007-10-10",
  "application_number": "US-24657708-A",
  "family_id": "40583366",
  "cited_by_count": 68,
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