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Patent · US9780225B2 · B2 · US

Semiconductor device and manufacturing method thereof

(11) Publication number
US9780225B2
(21) Application number
14/518,126
(22) Filing date
2014-10-20
(30) Priority date
2010-12-28
(43) Publication date
2017-10-03
(45) Date of grant
2017-10-03
(51) IPC
H01L 29/24; H01L 29/786; H10B 10/00; H10B 12/00; H10B 41/70; H10B 69/00; H10B 99/00; H10P 95/00; G11C 11/403; H01L 21/16; H01L 21/336; H01L 27/12; H01L 29/04; H01L 29/10; H01L 29/12; H01L 29/76; H01L 31/036; H01L 31/112
(52) CPC
  • H10D Inorganic electric semiconductor devices: 30/6755, 30/6713, 30/6756, 30/6757, 62/80, 86/201
  • G11C Static stores: 11/403, 16/0433
  • H01L Semiconductor devices; electric solid state devices not otherwise provided for: 21/02554, 21/02565, 21/02631, 27/10873, 27/1108, 27/1156, 27/1203, 29/24, 29/78618, 29/7869, 29/78693, 29/78696
  • H10B Electronic memory devices: 10/125, 12/05, 41/70
  • H10P Generic processes or apparatus for the manufacture or treatment of devices covered by class H10: 14/22, 14/3426, 14/3434
(73) Assignee
Semiconductor Energy Laboratory Co Ltd
(72) Inventors
Shunpei Yamazaki
(54) Title
Semiconductor device and manufacturing method thereof
(57) Abstract

A semiconductor device capable of high speed operation is provided. Further, a semiconductor device in which change in electric characteristics due to a short channel effect is hardly caused is provided. An oxide semiconductor having crystallinity is used for a semiconductor layer of a transistor. A channel formation region, a source region, and a drain region are formed in the semiconductor layer. The source region and the drain region are formed by self-aligned process in which one or more elements selected from Group 15 elements are added to the semiconductor layer with the use of a gate electrode as a mask. The source region and the drain region can have a wurtzite crystal structure.

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Claims (24)

  1. A semiconductor device comprising: an oxide semiconductor layer including a channel formation region, a source region and a drain region, wherein: the oxide semiconductor layer contains zinc, indium and gallium; the channel formation region includes a crystal; the crystal is c-axis-oriented in a direction substantially perpendicular to a surface of the oxide semiconductor layer; the crystal comprises atoms arranged to have a triangular or hexagonal shape in an a-b plane; each of the source region and the drain region includes at least one element selected from Group 15 elements; each of the source region and the drain region comprises a wurtzite crystal structure, and a crystal structure of each of the source region and the drain region is different from a crystal structure of the channel formation region.
  2. The semiconductor device according to claim 1, wherein: a concentration of the at least one element selected from Group 15 elements included in the source region is higher than or equal to 5×10 19 atoms/cm 3 and lower than or equal to 1×10 22 atoms/cm 3; and a concentration of the at least one element selected from Group 15 elements included in the drain region is higher than or equal to 5×10 19 atoms/cm 3 and lower than or equal to 1×10 22 atoms/cm 3.
  3. The semiconductor device according to claim 1, wherein the at least one element is nitrogen.
  4. The semiconductor device according to claim 1, further comprising an insulating layer under the oxide semiconductor layer, wherein: an amount of oxygen released from the insulating layer is greater than or equal to 3.0×10 20 atoms/cm 3 in thermal desorption spectroscopy when the amount of oxygen is converted into oxygen atoms; the insulating layer contains oxygen and is capable of supplying oxygen to the oxide semiconductor layer; and the insulating layer contains SiO x where x is larger than 2.
  5. The semiconductor device according to claim 1, further comprising a gate electrode over the oxide semiconductor layer, wherein the source region and the drain region are formed by self-aligned process with respect to the gate electrode.
  6. A semiconductor device comprising: an oxide semiconductor layer including a channel formation region, a source region and a drain region; a source electrode electrically connected to the source region; and a drain electrode electrically connected to the drain region, wherein: the channel formation region includes a crystal; the crystal is c-axis-oriented in a direction substantially perpendicular to a surface of the oxide semiconductor layer; the crystal comprises atoms arranged to have a triangular or hexagonal shape in an a-b plane; each of the source electrode and the drain electrode is a metal electrode; an energy gap of the channel formation region is larger than an energy gap of each of the source region and the drain region; the energy gap of the channel formation region is 2.5 eV or more, and a crystal structure of each of the source region and the drain region is different from a crystal structure of the channel formation region.
  7. The semiconductor device according to claim 6, wherein: each of the source region and the drain region includes at least one element selected from Group 15 elements; a concentration of the at least one element selected from Group 15 elements included in the source region is higher than or equal to 5×10 19 atoms/cm 3 and lower than or equal to 1×10 22 atoms/cm 3; and a concentration of the at least one element selected from Group 15 elements included in the drain region is higher than or equal to 5×10 19 atoms/cm 3 and lower than or equal to 1×10 22 atoms/cm 3.
  8. The semiconductor device according to claim 7, wherein the at least one element is nitrogen.
  9. The semiconductor device according to claim 6, further comprising an insulating layer under the oxide semiconductor layer, wherein: an amount of oxygen released from the insulating layer is greater than or equal to 3.0×10 20 atoms/cm 3 in thermal desorption spectroscopy when the amount of oxygen is converted into oxygen atoms; the insulating layer contains oxygen and is capable of supplying oxygen to the oxide semiconductor layer; and the insulating layer contains SiO x, where x is larger than 2.
  10. The semiconductor device according to claim 6, further comprising a gate electrode over the oxide semiconductor layer, wherein the source region and the drain region are formed by self-aligned process with respect to the gate electrode.
  11. The semiconductor device according to claim 6, wherein: a work function of the channel formation region is larger than a work function of the source region; and the work function of the source region is larger than a work function of the source electrode.
  12. The semiconductor device according to claim 6, wherein the energy gap of the channel formation region is 3 eV or more.
  13. A semiconductor device comprising: an oxide semiconductor layer including a channel formation region, a source region and a drain region, wherein: the oxide semiconductor layer contains zinc, indium and gallium; the channel formation region includes a crystal; the crystal is c-axis-oriented in a direction substantially perpendicular to a surface of the oxide semiconductor layer; the crystal comprises atoms arranged to have a triangular or hexagonal shape in an a-b plane; each of the source region and the drain region includes at least one element selected from Group 15 elements; each of the source region and the drain region comprises a wurtzite crystal structure; an energy gap of the channel formation region is larger than an energy gap of each of the source region and the drain region; the energy gap of the channel formation region is 2.5 eV or more, and a crystal structure of each of the source region and the drain region is different from a crystal structure of the channel formation region.
  14. The semiconductor device according to claim 13, wherein: a concentration of the at least one element selected from Group 15 elements included in the source region is higher than or equal to 5×10 19 atoms/cm 3 and lower than or equal to 1×10 22 atoms/cm 3; and a concentration of the at least one element selected from Group 15 elements included in the drain region is higher than or equal to 5×10 19 atoms/cm 3 and lower than or equal to 1×10 22 atoms/cm 3.
  15. The semiconductor device according to claim 13, wherein the at least one element is nitrogen.
  16. The semiconductor device according to claim 13, further comprising an insulating layer under the oxide semiconductor layer, wherein: an amount of oxygen released from the insulating layer is greater than or equal to 3.0×10 20 atoms/cm 3 in thermal desorption spectroscopy when the amount of oxygen is converted into oxygen atoms; the insulating layer contains oxygen and is capable of supplying oxygen to the oxide semiconductor layer; and the insulating layer contains SiO x where x is larger than 2.
  17. The semiconductor device according to claim 13, further comprising a gate electrode over the oxide semiconductor layer, wherein the source region and the drain region are formed by self-aligned process with respect to the gate electrode.
  18. The semiconductor device according to claim 13, further comprising a source electrode electrically connected to the source region, wherein: a work function of the channel formation region is larger than a work function of the source region; and the work function of the source region is larger than a work function of the source electrode.
  19. The semiconductor device according to claim 13, wherein the energy gap of the channel formation region is 3 eV or more.
  20. A semiconductor device comprising: an oxide semiconductor layer including a channel formation region, a source region and a drain region, wherein: the oxide semiconductor layer contains zinc, indium and gallium; the channel formation region includes a crystal; each of the source region and the drain region includes at least one element selected from Group 15 elements; each of the source region and the drain region comprises a wurtzite crystal structure, and a crystal structure of each of the source region and the drain region is different from a crystal structure of the channel formation region.
  21. The semiconductor device according to claim 20, wherein: an energy gap of the channel formation region is larger than an energy gap of each of the source region and the drain region; and the energy gap of the channel formation region is 2.5 eV or more.
  22. The semiconductor device according to claim 20, wherein: a concentration of the at least one element selected from Group 15 elements included in the source region is higher than or equal to 5×10 19 atoms/cm 3 and lower than or equal to 1×10 22 atoms/cm 3; and a concentration of the at least one element selected from Group 15 elements included in the drain region is higher than or equal to 5×10 19 atoms/cm 3 and lower than or equal to 1×10 22 atoms/cm 3.
  23. The semiconductor device according to claim 20, wherein the at least one element is nitrogen.
  24. The semiconductor device according to claim 20, further comprising a gate electrode over the oxide semiconductor layer, wherein the source region and the drain region are formed by self-aligned process with respect to the gate electrode.

Description

The present invention relates to a semiconductor device which includes a circuit including a semiconductor element such as a transistor, and a method for manufacturing the semiconductor device. For example, the present invention relates to an electronic device which includes, as a component, a power device mounted on a power supply circuit; a semiconductor integrated circuit including a memory, a thyristor, a converter, an image sensor, or the like; an electro-optical device typified by a liquid crystal display panel; a light-emitting display device including a light-emitting element; or the like.

Note that in this specification, a semiconductor device means any device that can function by utilizing semiconductor characteristics. An electro-optical device, a light-emitting display device, a semiconductor circuit, and an electronic device are all semiconductor devices.

A transistor formed over a glass substrate or the like is manufactured using amorphous silicon, polycrystalline silicon, or the like, as typically seen in a liquid crystal display device. Although a transistor including amorphous silicon has low field-effect mobility, it can be formed over a larger glass substrate. On the other hand, although a transistor including polycrystalline silicon has high field-effect mobility, it is not suitable for being formed over a larger glass substrate.

In view of the foregoing, attention has been drawn to a technique by which a transistor is manufactured using an oxide semiconductor, and such a transistor is applied to an electronic device an optical device.

Citations (234)

  • JPS60198861A
  • JPS63239117A
  • JPS63210024A
  • JPS63210022A
  • JPS63210023A
  • JPS63215519A
  • JPS63265818A
  • JPH05251705A
  • JPH0643122A
  • US5528032A
  • JPH06275697A
  • JPH08264794A
  • US5744864A
  • JPH11505377A
  • US5817548A
  • US5943593A
  • US5731856A
  • US6087679A
  • JPH11213763A
  • JP2000044236A
  • US6294274B1
  • US6727522B1
  • US7064346B2
  • JP2000150900A
  • US6878962B1
  • EP1912298A1
  • EP1199755A1
  • US6987029B2
  • JP2001044500A
  • US7605012B2
  • US6674098B1
  • US20010046027A1
  • JP2002076356A
  • EP1209748A1
  • JP2003050405A
  • US20020056838A1
  • US20020132454A1
  • JP2002289859A
  • US6563174B2
  • JP2003086808A
  • JP2003086000A
  • US7061014B2
  • EP1443130A1
  • US20050039670A1
  • US7323356B2
  • JP2003273400A
  • US20040038446A1
  • US7049190B2
  • US20030189401A1
  • US20030218222A1
  • US20050173734A1
  • US7205640B2
  • US7501293B2
  • US7105868B2
  • JP2004103957A
  • US20060035452A1
  • US20040127038A1
  • JP2004273614A
  • JP2004273732A
  • US20060244107A1
  • US8093589B2
  • WO2004114391A1
  • US20110175090A1
  • US20050017302A1
  • EP1737044A1
  • US20070194379A1
  • US20090280600A1
  • US20080254569A1
  • US20090278122A1
  • EP2226847A2
  • US20060043377A1
  • US20050199959A1
  • US7297977B2
  • US7282782B2
  • US7462862B2
  • JP2005340370A
  • US7211825B2
  • US20060038242A1
  • US7385224B2
  • US20080006877A1
  • US20060091793A1
  • US7453065B2
  • US20060113565A1
  • US20060113536A1
  • US20060110867A1
  • US20060108636A1
  • US20060108529A1
  • US20060113549A1
  • US20060113539A1
  • US20090073325A1
  • US20060170111A1
  • US20060169973A1
  • US20090152541A1
  • US20090134399A1
  • US20060197092A1
  • US20060208977A1
  • US20060231882A1
  • US20060228974A1
  • US20060238135A1
  • US20060270175A1
  • US20060284172A1
  • US7402506B2
  • US20060284171A1
  • US20060292777A1
  • US20070024187A1
  • US20070046191A1
  • US7468304B2
  • US7453087B2
  • US20070052025A1
  • US20070054507A1
  • US20090114910A1
  • JP2007123861A
  • EP1995787A2
  • US7732819B2
  • JP2010267975A
  • US20150340513A1
  • US7910490B2
  • US7674650B2
  • US9099562B2
  • US7932521B2
  • EP1998375A2
  • EP1998373A2
  • US8790959B2
  • US20110104851A1
  • US8669550B2
  • US8629069B2
  • US8466463B2
  • US8274077B2
  • EP1770788A2
  • US20110121290A1
  • US20080308805A1
  • US8796069B2
  • JP2007096055A
  • EP1998374A2
  • US20070090365A1
  • US20070108446A1
  • US20070152217A1
  • US20090068773A1
  • US20080050595A1
  • US20070172591A1
  • US20070187760A1
  • JP2007220816A
  • US20070187678A1
  • US8003981B2
  • US20070272922A1
  • US20070252928A1
  • US7993964B2
  • US20070278490A1
  • WO2007142167A1
  • US7598520B2
  • US20090200545A1
  • US20070287296A1
  • US20080038882A1
  • US20080038929A1
  • US7411209B2
  • US20080073653A1
  • US20080106191A1
  • US20080083950A1
  • US20080116500A1
  • US20080128689A1
  • US20080129195A1
  • US20100051936A1
  • US20080166834A1
  • US20080277656A1
  • US20080182358A1
  • US20100102309A1
  • US20080224133A1
  • US20080258139A1
  • US20080258143A1
  • US20080258141A1
  • US20080258140A1
  • US20100109002A1
  • JP2008277665A
  • US20080296568A1
  • US20090008645A1
  • US20090057674A1
  • JP2009135350A
  • US8202365B2
  • US20090152506A1
  • JP2009147192A
  • JP2009167087A
  • US20100244022A1
  • US20090283763A1
  • EP2120267A1
  • CN101582453A
  • EP2408011A2
  • JP2009278115A
  • KR20090119666A
  • JP2010040552A
  • US20100065844A1
  • EP2175493A1
  • CN101719514A
  • US20100084655A1
  • KR20100039806A
  • JP2010093070A
  • US20100092800A1
  • JP2010135774A
  • US20100117073A1
  • US8643011B2
  • US20160111282A1
  • US8329506B2
  • JP2010153802A
  • US9252288B2
  • US20130134418A1
  • JP2010141230A
  • US8378341B2
  • US20100159639A1
  • US8492756B2
  • JP2010192881A
  • US8785929B2
  • US9040985B2
  • JP2010202454A
  • US20100224871A1
  • JP2011001249A
  • US8334532B2
  • US20120256179A1
  • US20110062436A1
  • US9214563B2
  • US8492758B2
  • US8890146B2
  • WO2011070929A1
  • US9349757B2
  • US9171868B2
  • JP2011141543A
  • US8415665B2
  • JP2011146694A
  • US20110147738A1
  • WO2011074407A1
  • US20120161126A1
  • US20120161123A1
  • US20120161122A1
  • US20120161125A1
  • US20120161124A1
  • US20120161121A1
Record as JSON 
{
  "publication_number": "US9780225B2",
  "country": "US",
  "kind": "B2",
  "title": "Semiconductor device and manufacturing method thereof",
  "abstract": "A semiconductor device capable of high speed operation is provided. Further, a semiconductor device in which change in electric characteristics due to a short channel effect is hardly caused is provided. An oxide semiconductor having crystallinity is used for a semiconductor layer of a transistor. A channel formation region, a source region, and a drain region are formed in the semiconductor layer. The source region and the drain region are formed by self-aligned process in which one or more elements selected from Group 15 elements are added to the semiconductor layer with the use of a gate electrode as a mask. The source region and the drain region can have a wurtzite crystal structure.",
  "claims": [
    "1. A semiconductor device comprising: an oxide semiconductor layer including a channel formation region, a source region and a drain region, wherein: the oxide semiconductor layer contains zinc, indium and gallium; the channel formation region includes a crystal; the crystal is c-axis-oriented in a direction substantially perpendicular to a surface of the oxide semiconductor layer; the crystal comprises atoms arranged to have a triangular or hexagonal shape in an a-b plane; each of the source region and the drain region includes at least one element selected from Group 15 elements; each of the source region and the drain region comprises a wurtzite crystal structure, and a crystal structure of each of the source region and the drain region is different from a crystal structure of the channel formation region.",
    "2. The semiconductor device according to claim 1, wherein: a concentration of the at least one element selected from Group 15 elements included in the source region is higher than or equal to 5×10 19 atoms/cm 3 and lower than or equal to 1×10 22 atoms/cm 3; and a concentration of the at least one element selected from Group 15 elements included in the drain region is higher than or equal to 5×10 19 atoms/cm 3 and lower than or equal to 1×10 22 atoms/cm 3.",
    "3. The semiconductor device according to claim 1, wherein the at least one element is nitrogen.",
    "4. The semiconductor device according to claim 1, further comprising an insulating layer under the oxide semiconductor layer, wherein: an amount of oxygen released from the insulating layer is greater than or equal to 3.0×10 20 atoms/cm 3 in thermal desorption spectroscopy when the amount of oxygen is converted into oxygen atoms; the insulating layer contains oxygen and is capable of supplying oxygen to the oxide semiconductor layer; and the insulating layer contains SiO x where x is larger than 2.",
    "5. The semiconductor device according to claim 1, further comprising a gate electrode over the oxide semiconductor layer, wherein the source region and the drain region are formed by self-aligned process with respect to the gate electrode.",
    "6. A semiconductor device comprising: an oxide semiconductor layer including a channel formation region, a source region and a drain region; a source electrode electrically connected to the source region; and a drain electrode electrically connected to the drain region, wherein: the channel formation region includes a crystal; the crystal is c-axis-oriented in a direction substantially perpendicular to a surface of the oxide semiconductor layer; the crystal comprises atoms arranged to have a triangular or hexagonal shape in an a-b plane; each of the source electrode and the drain electrode is a metal electrode; an energy gap of the channel formation region is larger than an energy gap of each of the source region and the drain region; the energy gap of the channel formation region is 2.5 eV or more, and a crystal structure of each of the source region and the drain region is different from a crystal structure of the channel formation region.",
    "7. The semiconductor device according to claim 6, wherein: each of the source region and the drain region includes at least one element selected from Group 15 elements; a concentration of the at least one element selected from Group 15 elements included in the source region is higher than or equal to 5×10 19 atoms/cm 3 and lower than or equal to 1×10 22 atoms/cm 3; and a concentration of the at least one element selected from Group 15 elements included in the drain region is higher than or equal to 5×10 19 atoms/cm 3 and lower than or equal to 1×10 22 atoms/cm 3.",
    "8. The semiconductor device according to claim 7, wherein the at least one element is nitrogen.",
    "9. The semiconductor device according to claim 6, further comprising an insulating layer under the oxide semiconductor layer, wherein: an amount of oxygen released from the insulating layer is greater than or equal to 3.0×10 20 atoms/cm 3 in thermal desorption spectroscopy when the amount of oxygen is converted into oxygen atoms; the insulating layer contains oxygen and is capable of supplying oxygen to the oxide semiconductor layer; and the insulating layer contains SiO x, where x is larger than 2.",
    "10. The semiconductor device according to claim 6, further comprising a gate electrode over the oxide semiconductor layer, wherein the source region and the drain region are formed by self-aligned process with respect to the gate electrode.",
    "11. The semiconductor device according to claim 6, wherein: a work function of the channel formation region is larger than a work function of the source region; and the work function of the source region is larger than a work function of the source electrode.",
    "12. The semiconductor device according to claim 6, wherein the energy gap of the channel formation region is 3 eV or more.",
    "13. A semiconductor device comprising: an oxide semiconductor layer including a channel formation region, a source region and a drain region, wherein: the oxide semiconductor layer contains zinc, indium and gallium; the channel formation region includes a crystal; the crystal is c-axis-oriented in a direction substantially perpendicular to a surface of the oxide semiconductor layer; the crystal comprises atoms arranged to have a triangular or hexagonal shape in an a-b plane; each of the source region and the drain region includes at least one element selected from Group 15 elements; each of the source region and the drain region comprises a wurtzite crystal structure; an energy gap of the channel formation region is larger than an energy gap of each of the source region and the drain region; the energy gap of the channel formation region is 2.5 eV or more, and a crystal structure of each of the source region and the drain region is different from a crystal structure of the channel formation region.",
    "14. The semiconductor device according to claim 13, wherein: a concentration of the at least one element selected from Group 15 elements included in the source region is higher than or equal to 5×10 19 atoms/cm 3 and lower than or equal to 1×10 22 atoms/cm 3; and a concentration of the at least one element selected from Group 15 elements included in the drain region is higher than or equal to 5×10 19 atoms/cm 3 and lower than or equal to 1×10 22 atoms/cm 3.",
    "15. The semiconductor device according to claim 13, wherein the at least one element is nitrogen.",
    "16. The semiconductor device according to claim 13, further comprising an insulating layer under the oxide semiconductor layer, wherein: an amount of oxygen released from the insulating layer is greater than or equal to 3.0×10 20 atoms/cm 3 in thermal desorption spectroscopy when the amount of oxygen is converted into oxygen atoms; the insulating layer contains oxygen and is capable of supplying oxygen to the oxide semiconductor layer; and the insulating layer contains SiO x where x is larger than 2.",
    "17. The semiconductor device according to claim 13, further comprising a gate electrode over the oxide semiconductor layer, wherein the source region and the drain region are formed by self-aligned process with respect to the gate electrode.",
    "18. The semiconductor device according to claim 13, further comprising a source electrode electrically connected to the source region, wherein: a work function of the channel formation region is larger than a work function of the source region; and the work function of the source region is larger than a work function of the source electrode.",
    "19. The semiconductor device according to claim 13, wherein the energy gap of the channel formation region is 3 eV or more.",
    "20. A semiconductor device comprising: an oxide semiconductor layer including a channel formation region, a source region and a drain region, wherein: the oxide semiconductor layer contains zinc, indium and gallium; the channel formation region includes a crystal; each of the source region and the drain region includes at least one element selected from Group 15 elements; each of the source region and the drain region comprises a wurtzite crystal structure, and a crystal structure of each of the source region and the drain region is different from a crystal structure of the channel formation region.",
    "21. The semiconductor device according to claim 20, wherein: an energy gap of the channel formation region is larger than an energy gap of each of the source region and the drain region; and the energy gap of the channel formation region is 2.5 eV or more.",
    "22. The semiconductor device according to claim 20, wherein: a concentration of the at least one element selected from Group 15 elements included in the source region is higher than or equal to 5×10 19 atoms/cm 3 and lower than or equal to 1×10 22 atoms/cm 3; and a concentration of the at least one element selected from Group 15 elements included in the drain region is higher than or equal to 5×10 19 atoms/cm 3 and lower than or equal to 1×10 22 atoms/cm 3.",
    "23. The semiconductor device according to claim 20, wherein the at least one element is nitrogen.",
    "24. The semiconductor device according to claim 20, further comprising a gate electrode over the oxide semiconductor layer, wherein the source region and the drain region are formed by self-aligned process with respect to the gate electrode."
  ],
  "description_excerpt": "The present invention relates to a semiconductor device which includes a circuit including a semiconductor element such as a transistor, and a method for manufacturing the semiconductor device. For example, the present invention relates to an electronic device which includes, as a component, a power device mounted on a power supply circuit; a semiconductor integrated circuit including a memory, a thyristor, a converter, an image sensor, or the like; an electro-optical device typified by a liquid crystal display panel; a light-emitting display device including a light-emitting element; or the like.\n\nNote that in this specification, a semiconductor device means any device that can function by utilizing semiconductor characteristics. An electro-optical device, a light-emitting display device, a semiconductor circuit, and an electronic device are all semiconductor devices.\n\nA transistor formed over a glass substrate or the like is manufactured using amorphous silicon, polycrystalline silicon, or the like, as typically seen in a liquid crystal display device. Although a transistor including amorphous silicon has low field-effect mobility, it can be formed over a larger glass substrate. On the other hand, although a transistor including polycrystalline silicon has high field-effect mobility, it is not suitable for being formed over a larger glass substrate.\n\nIn view of the foregoing, attention has been drawn to a technique by which a transistor is manufactured using an oxide semiconductor, and such a transistor is applied to an electronic device an optical device.",
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  "assignees": [
    "Semiconductor Energy Laboratory Co Ltd"
  ],
  "inventors": [
    "Shunpei Yamazaki"
  ],
  "filing_date": "2014-10-20",
  "publication_date": "2017-10-03",
  "grant_date": "2017-10-03",
  "priority_date": "2010-12-28",
  "application_number": "US-201414518126-A",
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Record 3,852 of 8,000 in Patents full text (MLC-0201). Request the full dataset.