Patents full text · MLC-0201
CPC subclass H10B
Electronic memory devices
| No. | Publication | Title | Published | Assignee |
|---|---|---|---|---|
| 1 | US12266660B2 | Memory device having 2-transistor memory cell and access line plate | 2025-04-01 | MICRON TECHNOLOGY INC |
| 2 | US11223014B2 | Semiconductor structures including liners comprising alucone and related methods | 2022-01-11 | MICRON TECHNOLOGY INC |
| 3 | US10367080B2 | Method of forming a germanium oxynitride film | 2019-07-30 | ASM IP HOLDING BV |
| 4 | US9865602B2 | Semiconductor devices having bit lines and method of fabricating the same | 2018-01-09 | SAMSUNG ELECTRONICS CO LTD |
| 5 | US2016163561A1 | Technique to deposit sidewall passivation for high aspect ratio cylinder etch | 2016-06-09 | LAM RES CORP |
| 6 | US8779502B2 | Nonvolatile semiconductor memory | 2014-07-15 | SAKUMA KIWAMU |
| 7 | US8710580B2 | Semiconductor device and method of manufacturing the same | 2014-04-29 | SAKUMA KIWAMU |
| 8 | US8039895B2 | Transistors having a channel region between channel-portion holes and methods of forming the same | 2011-10-18 | SAMSUNG ELECTRONICS CO LTD |
| 9 | US2007173007A1 | Semiconductor device and method for fabricating the same | 2007-07-26 | HYNIX SEMICONDUCTOR INC |
| 10 | US6740901B2 | Production of semiconductor integrated circuit | 2004-05-25 | RENESAS TECH CORP |
| 11 | US6570253B1 | Multi-layer film for a thin film structure and a capacitor using the same | 2003-05-27 | SAMSUNG ELECTRONICS CO LTD |
| 12 | US6556065B1 | 256 Meg dynamic random access memory | 2003-04-29 | MICRON TECHNOLOGY INC |
| 13 | US6452226B2 | Non-volatile semiconductor memory device and manufacturing method thereof | 2002-09-17 | MITSUBISHI ELECTRIC CORP |
| 14 | US6097625A | Magnetic random access memory (MRAM) array with magnetic tunnel junction (MTJ) cells and remote diodes | 2000-08-01 | IBM |
| 15 | US6043132A | Method for forming HSG silicon film of semiconductor device | 2000-03-28 | SAMSUNG ELECTRONICS CO LTD |
| 16 | US6004839A | Semiconductor device with conductive plugs | 1999-12-21 | NEC CORP |
| 17 | US5892714A | Method of programming and/or verifying a threshold voltage level of a nonvolatile memory cell | 1999-04-06 | LG SEMICON CO LTD |
| 18 | US5336638A | Process for manufacturing semiconductor devices | 1994-08-09 | HITACHI LTD |
18 records in this listing. Patents full text (MLC-0201). Request the full dataset.