Patent · US11223014B2 · B2 · US

Semiconductor structures including liners comprising alucone and related methods

(11) Publication number

US11223014B2

(21) Application number

16/446,746

(22) Filing date

2019-06-20

(30) Priority date

2014-02-25

(43) Publication date

2022-01-11

(45) Date of grant

2022-01-11

(52) CPC

H10P Generic processes or apparatus for the manufacture or treatment of devices covered by class H10: 14/69391, 14/6339, 14/6548, 14/662, 14/683, 50/285, 50/71, 76/4085
H01L Electric elements: 21/02118, 21/02178, 21/0228, 21/02362, 21/0337, 27/1157, 27/11582, 27/2409, 27/2427, 27/249, 45/06, 45/065, 45/1233, 45/126, 45/141, 45/1608, 45/1675, 45/1691
H10B Electronic memory devices: 43/27, 43/35, 63/20, 63/24, 63/845
H10N Electric solid-state devices not otherwise provided for: 70/021, 70/063, 70/068, 70/231, 70/235, 70/826, 70/8413, 70/882

(73) Assignee

MICRON TECHNOLOGY INC

(54) Title

Semiconductor structures including liners comprising alucone and related methods

(57) Abstract

A semiconductor device including stacked structures. The stacked structures include at least two chalcogenide materials or alternating dielectric materials and conductive materials. A liner including alucone is formed on sidewalls of the stacked structures. Methods of forming the semiconductor device are also disclosed.

Full text

View on Google Patents

Claims (18)

A semiconductor device, comprising: stack structures overlying a material; and a liner on sidewalls of the stack structures, the liner comprising: a first portion comprising aluminum oxide in contact with the sidewalls of the stack structures; and a second portion comprising alucone contacting the first portion, the second portion further comprising at least one of silicon atoms or nitrogen atoms.
The semiconductor device of claim 1, wherein the liner comprises a gradient of alucone and aluminum oxide.
The semiconductor device of claim 1, wherein the second portion comprises from about 10 atomic percent to about 20 atomic percent silicon.
The semiconductor device of claim 1, wherein the liner comprises a ratio of aluminum oxide to alucone of from about 1:1 to about 1:10.
The semiconductor device of claim 1, wherein the stack structures comprise an electrode and a switching material adjacent the electrode.
The semiconductor device of claim 1, wherein the liner further comprises a third portion between the first portion and the second portion, the third portion comprising a greater amount of alucone than the first portion.
The semiconductor device of claim 1, wherein the stack structures comprise an electrode between a switching material and a phase change material.
The semiconductor device of claim 1, wherein the liner has a thickness ranging from about 5 Å to about 30 Å.
The semiconductor device of claim 1, wherein the stack structures comprise alternating conductive materials and dielectric materials.
A semiconductor device, comprising: a base material; 3D-NAND memory structures comprising stack structures vertically overlying the base material, each stack structure comprising alternating dielectric materials and conductive materials, the alternating dielectric materials vertically spaced from each other by the conductive materials; and a liner comprising alucone on sidewalls of the stack structures, the liner comprising a gradient of aluminum oxide and alucone, a concentration of alucone increasing from about zero percent at the sidewalls of each stack structure to about one-hundred percent at an outer surface of the liner distal from the sidewalls of the respective stack structure.
The semiconductor device of claim 10, wherein the stack structures comprises a control gate material.
The semiconductor device of claim 10, wherein the liner has a thickness between about 5 Å and about 30 Å.
The semiconductor device of claim 10, wherein the alternating dielectric materials comprise silicon dioxide.
The semiconductor device of claim 10, wherein the alternating conductive materials comprise tungsten.
The semiconductor device of claim 10, wherein the liner further comprises from about 10 atomic percent to about 20 atomic percent of at least one of silicon and nitrogen.
A method of forming a semiconductor device, the method comprising: forming stack structures overlying a base material; and forming a liner on sidewalls of the stack structures, forming the liner comprising: forming a first portion comprising aluminum oxide in contact with the sidewalls of the stack structures; and forming a second portion comprising alucone contacting the first portion, the second portion further comprising at least one of silicon atoms and nitrogen atoms.
The method of claim 16, wherein forming a second portion comprising alucone contacting the first portion comprises forming the second portion to exhibit a gradient of alucone and aluminum oxide.
The method of claim 16, wherein forming stack structures overlying a base material comprises forming stack structures comprising alternating dielectric materials and conductive materials overlying the base material.

Citations (100)

KR20040068024A
KR20080060321A
KR20100018445A
US10249819B2
US10573513B2
US10665782B2
US2003142944A1
US2004227227A1
US2005167842A1
US2005263829A1
US2006056233A1
US2006097240A1
US2007105306A1
US2007117256A1
US2007166980A1
US2007275560A1
US2008102560A1
US2008124917A1
US2008293207A1
US2008315359A1
US2009072274A1
US2009231911A1
US2009251944A1
US2009302362A1
US2010032637A1
US2010155723A1
US2010163818A1
US2010237502A1
US2011068313A1
US2011244666A1
US2011272664A1
US2012001145A1
US2012040528A1
US2012080792A1
US2012098146A1
US2012181596A1
US2012220099A1
US2012225534A1
US2012235109A1
US2012236642A1
US2012313064A1
US2012313199A1
US2012315384A1
US2013016557A1
US2013043455A1
US2013056698A1
US2013137275A1
US2013207068A1
US2013294152A1
US2013333835A1
US2014048795A1
US2014168490A1
US2014170234A1
US2014190565A1
US2014273516A1
US2014273524A1
US2015041749A1
US2015069473A1
US2015069559A1
US2015069581A1
US2015137061A1
US2015171324A1
US2015179706A1
US2015243708A1
US2015243709A1
US2015243885A1
US2015287916A1
US2016056208A1
US2016133671A1
US6404003B1
US6486070B1
US7215564B2
US7482616B2
US7491600B2
US7700472B2
US7741638B2
US7838860B2
US7875516B2
US7936027B2
US8129705B2
US8143610B2
US8153527B2
US8203134B2
US8207557B2
US8237213B2
US8394683B2
US8450714B2
US8519371B2
US8536015B2
US8822968B2
US8902634B2
US8937292B2
US9012326B2
US9093632B2
US9136307B2
US9224615B2
US9406877B2
US9484196B2
US9748311B2
WO2015088921A1

Record as JSON

{
  "publication_number": "US11223014B2",
  "country": "US",
  "kind": "B2",
  "title": "Semiconductor structures including liners comprising alucone and related methods",
  "abstract": "A semiconductor device including stacked structures. The stacked structures include at least two chalcogenide materials or alternating dielectric materials and conductive materials. A liner including alucone is formed on sidewalls of the stacked structures. Methods of forming the semiconductor device are also disclosed.",
  "claims": [
    "1. A semiconductor device, comprising: stack structures overlying a material; and a liner on sidewalls of the stack structures, the liner comprising: a first portion comprising aluminum oxide in contact with the sidewalls of the stack structures; and a second portion comprising alucone contacting the first portion, the second portion further comprising at least one of silicon atoms or nitrogen atoms.",
    "2. The semiconductor device of claim 1, wherein the liner comprises a gradient of alucone and aluminum oxide.",
    "3. The semiconductor device of claim 1, wherein the second portion comprises from about 10 atomic percent to about 20 atomic percent silicon.",
    "4. The semiconductor device of claim 1, wherein the liner comprises a ratio of aluminum oxide to alucone of from about 1:1 to about 1:10.",
    "5. The semiconductor device of claim 1, wherein the stack structures comprise an electrode and a switching material adjacent the electrode.",
    "6. The semiconductor device of claim 1, wherein the liner further comprises a third portion between the first portion and the second portion, the third portion comprising a greater amount of alucone than the first portion.",
    "7. The semiconductor device of claim 1, wherein the stack structures comprise an electrode between a switching material and a phase change material.",
    "8. The semiconductor device of claim 1, wherein the liner has a thickness ranging from about 5 Å to about 30 Å.",
    "9. The semiconductor device of claim 1, wherein the stack structures comprise alternating conductive materials and dielectric materials.",
    "10. A semiconductor device, comprising: a base material; 3D-NAND memory structures comprising stack structures vertically overlying the base material, each stack structure comprising alternating dielectric materials and conductive materials, the alternating dielectric materials vertically spaced from each other by the conductive materials; and a liner comprising alucone on sidewalls of the stack structures, the liner comprising a gradient of aluminum oxide and alucone, a concentration of alucone increasing from about zero percent at the sidewalls of each stack structure to about one-hundred percent at an outer surface of the liner distal from the sidewalls of the respective stack structure.",
    "11. The semiconductor device of claim 10, wherein the stack structures comprises a control gate material.",
    "12. The semiconductor device of claim 10, wherein the liner has a thickness between about 5 Å and about 30 Å.",
    "13. The semiconductor device of claim 10, wherein the alternating dielectric materials comprise silicon dioxide.",
    "14. The semiconductor device of claim 10, wherein the alternating conductive materials comprise tungsten.",
    "15. The semiconductor device of claim 10, wherein the liner further comprises from about 10 atomic percent to about 20 atomic percent of at least one of silicon and nitrogen.",
    "16. A method of forming a semiconductor device, the method comprising: forming stack structures overlying a base material; and forming a liner on sidewalls of the stack structures, forming the liner comprising: forming a first portion comprising aluminum oxide in contact with the sidewalls of the stack structures; and forming a second portion comprising alucone contacting the first portion, the second portion further comprising at least one of silicon atoms and nitrogen atoms.",
    "17. The method of claim 16, wherein forming a second portion comprising alucone contacting the first portion comprises forming the second portion to exhibit a gradient of alucone and aluminum oxide.",
    "18. The method of claim 16, wherein forming stack structures overlying a base material comprises forming stack structures comprising alternating dielectric materials and conductive materials overlying the base material."
  ],
  "cpc": [
    "H10P 14/69391",
    "H01L 21/02118",
    "H01L 21/02178",
    "H01L 21/0228",
    "H01L 21/02362",
    "H01L 21/0337",
    "H01L 27/1157",
    "H01L 27/11582",
    "H01L 27/2409",
    "H01L 27/2427",
    "H01L 27/249",
    "H01L 45/06",
    "H01L 45/065",
    "H01L 45/1233",
    "H01L 45/126",
    "H01L 45/141",
    "H01L 45/1608",
    "H01L 45/1675",
    "H01L 45/1691",
    "H10B 43/27",
    "H10B 43/35",
    "H10B 63/20",
    "H10B 63/24",
    "H10B 63/845",
    "H10N 70/021",
    "H10N 70/063",
    "H10N 70/068",
    "H10N 70/231",
    "H10N 70/235",
    "H10N 70/826",
    "H10N 70/8413",
    "H10N 70/882",
    "H10P 14/6339",
    "H10P 14/6548",
    "H10P 14/662",
    "H10P 14/683",
    "H10P 50/285",
    "H10P 50/71",
    "H10P 76/4085"
  ],
  "assignees": [
    "MICRON TECHNOLOGY INC"
  ],
  "filing_date": "2019-06-20",
  "publication_date": "2022-01-11",
  "grant_date": "2022-01-11",
  "priority_date": "2014-02-25",
  "application_number": "US-201916446746-A",
  "family_id": "68097393",
  "citations": [
    "KR20040068024A",
    "KR20080060321A",
    "KR20100018445A",
    "US10249819B2",
    "US10573513B2",
    "US10665782B2",
    "US2003142944A1",
    "US2004227227A1",
    "US2005167842A1",
    "US2005263829A1",
    "US2006056233A1",
    "US2006097240A1",
    "US2007105306A1",
    "US2007117256A1",
    "US2007166980A1",
    "US2007275560A1",
    "US2008102560A1",
    "US2008124917A1",
    "US2008293207A1",
    "US2008315359A1",
    "US2009072274A1",
    "US2009231911A1",
    "US2009251944A1",
    "US2009302362A1",
    "US2010032637A1",
    "US2010155723A1",
    "US2010163818A1",
    "US2010237502A1",
    "US2011068313A1",
    "US2011244666A1",
    "US2011272664A1",
    "US2012001145A1",
    "US2012040528A1",
    "US2012080792A1",
    "US2012098146A1",
    "US2012181596A1",
    "US2012220099A1",
    "US2012225534A1",
    "US2012235109A1",
    "US2012236642A1",
    "US2012313064A1",
    "US2012313199A1",
    "US2012315384A1",
    "US2013016557A1",
    "US2013043455A1",
    "US2013056698A1",
    "US2013137275A1",
    "US2013207068A1",
    "US2013294152A1",
    "US2013333835A1",
    "US2014048795A1",
    "US2014168490A1",
    "US2014170234A1",
    "US2014190565A1",
    "US2014273516A1",
    "US2014273524A1",
    "US2015041749A1",
    "US2015069473A1",
    "US2015069559A1",
    "US2015069581A1",
    "US2015137061A1",
    "US2015171324A1",
    "US2015179706A1",
    "US2015243708A1",
    "US2015243709A1",
    "US2015243885A1",
    "US2015287916A1",
    "US2016056208A1",
    "US2016133671A1",
    "US6404003B1",
    "US6486070B1",
    "US7215564B2",
    "US7482616B2",
    "US7491600B2",
    "US7700472B2",
    "US7741638B2",
    "US7838860B2",
    "US7875516B2",
    "US7936027B2",
    "US8129705B2",
    "US8143610B2",
    "US8153527B2",
    "US8203134B2",
    "US8207557B2",
    "US8237213B2",
    "US8394683B2",
    "US8450714B2",
    "US8519371B2",
    "US8536015B2",
    "US8822968B2",
    "US8902634B2",
    "US8937292B2",
    "US9012326B2",
    "US9093632B2",
    "US9136307B2",
    "US9224615B2",
    "US9406877B2",
    "US9484196B2",
    "US9748311B2",
    "WO2015088921A1"
  ]
}

Record 538 of 5,000 in Patents full text (MLC-0201). Request the full dataset.