Target substrate with micro semiconductor structures

{
  "publication_number": "US10872801B2",
  "country": "US",
  "kind": "B2",
  "title": "Target substrate with micro semiconductor structures",
  "abstract": "A target substrate with micro semiconductor structures is manufactured by following steps of: attaching a pre-adhesive layer on a target substrate; patterning the adhesive layer to form a plurality of micro contact protrusions; and using the target substrate to perform a selective batch pickup procedure to pick up a plurality of micro semiconductor structures so as to form the target substrate with micro semiconductor structures.",
  "claims": [
    "1. A target substrate with micro semiconductor structures, comprising: a target substrate having a substrate body and a plurality of conductive portions disposed on the substrate body; a plurality of micro semiconductor structures patternedly disposed on the target substrate, wherein each of the micro semiconductor structures comprises a main body and at least a pair of electrodes disposed on the main body, and each of the electrodes is directly contacted and eutectic bonded with corresponding one of the conductive portions of the target substrate excluding a solder between the electrode and the conductive portion; and a plurality of micro contact protrusions connecting the main bodies of the patterned micro semiconductor structures to the substrate body of the target substrate, wherein with respect to the pair of the electrodes of one of the micro semiconductor structures, a zone is between the pair of the electrodes, at least one part of the micro contact protrusions is beyond the zone and at a periphery of the pair of the electrodes; wherein each of the micro semiconductor structures is a single structure excluding semiconductor package.",
    "2. The target substrate with micro semiconductor structures according to claim 1, wherein the micro contact protrusions are disposed around the corresponding conductive portions at the periphery of the pair of the electrodes.",
    "3. The target substrate with micro semiconductor structures according to claim 1, wherein the micro contact protrusions are continuously or discontinuously disposed.",
    "4. The target substrate with micro semiconductor structures according to claim 1, wherein one part of the micro contact protrusions is disposed between the pair of the electrodes of each of the micro semiconductor structures.",
    "5. The target substrate with micro semiconductor structures according to claim 1, wherein the micro contact protrusions are not disposed at the zone between the pair of the electrodes of each of the micro semiconductor structures.",
    "6. The target substrate with micro semiconductor structures according to claim 1, wherein the micro semiconductor structures are horizontal-electrode or flip-chip micro LED dies.",
    "7. The target substrate with micro semiconductor structures according to claim 1, wherein the micro semiconductor structures are vertical-electrode micro LED dies.",
    "8. The target substrate with micro semiconductor structures according to claim 1, wherein the micro contact protrusions connect the main bodies of the patterned micro semiconductor structures to the substrate body of the target substrate before each of the electrodes is eutectic bonded with corresponding one of the conductive portions of the target substrate.",
    "9. The target substrate with micro semiconductor structures according to claim 1, wherein with respect to one of the electrodes, at least one of the micro contact protrusions is disposed surrounding the one of the electrodes.",
    "10. The target substrate with micro semiconductor structures according to claim 1, wherein each of the electrodes is restricted by the micro contact protrusion to be beside the micro contact protrusion, directly contacted and eutectic bonded with corresponding one of the conductive portions of the target substrate excluding a solder between the electrode and the conductive portion.",
    "11. The target substrate with micro semiconductor structures according to claim 10, wherein a space at the zone between the pair of the electrodes is fully filled with a corresponding one of the micro contact protrusions.",
    "12. A target substrate with micro semiconductor structures, comprising: a target substrate; a plurality of micro semiconductor structures disposed on the target substrate; and a first connecting element and a second connecting element connecting the micro semiconductor structures to the target substrate; wherein the target substrate has a substrate body and a plurality of conductive portions disposed on the substrate body, and each of the micro semiconductor structures comprises a main body and at least a pair of electrodes disposed on the main body; wherein the first connecting element excludes a solder and is formed from directly connecting and eutectic bonding the electrode of each of the micro semiconductor structures with corresponding one of the conductive portions of the target substrate; and wherein the second connecting element connects the main bodies of the micro semiconductor structures to the substrate body of the target substrate, and the second connecting element is formed by at least a micro contact protrusion, wherein with respect to the pair of the electrodes of one of the micro semiconductor structures, a zone is between the pair of the electrodes, at least one part of the second connecting element is beyond the zone and at a periphery of the pair of the electrodes; wherein each of the micro semiconductor structures is a single structure excluding semiconductor package.",
    "13. The target substrate with micro semiconductor structures according to claim 12, wherein the micro contact protrusions are disposed around the corresponding conductive portions at the periphery of the pair of the electrodes.",
    "14. The target substrate with micro semiconductor structures according to claim 12, wherein the micro contact protrusion is continuously or discontinuously disposed.",
    "15. The target substrate with micro semiconductor structures according to claim 12, wherein with respect to the corresponding one of the conductive portions, the micro contact protrusion is disposed surrounding the corresponding one conductive portion.",
    "16. The target substrate with micro semiconductor structures according to claim 12, wherein one part of the micro contact protrusions is disposed between the pair of the electrodes of each of the micro semiconductor structures.",
    "17. The target substrate with micro semiconductor structures according to claim 12, wherein the second connecting element connects the main bodies of the micro semiconductor structures to the substrate body of the target substrate before the first connecting element is formed from eutectic bonding the electrode of each of the micro semiconductor structures with corresponding one of the conductive portions of the target substrate.",
    "18. The target substrate with micro semiconductor structures according to claim 12, wherein the second connecting element is not disposed at the zone between the pair of the electrodes of each of the micro semiconductor structures.",
    "19. The target substrate with micro semiconductor structures according to claim 12, wherein the first connecting element excludes a solder and is restricted by the second connecting element to be beside the second connecting element and formed from directly connecting and eutectic bonding the electrode of each of the micro semiconductor structures with corresponding one of the conductive portions of the target substrate.",
    "20. The target substrate with micro semiconductor structures according to claim 19, wherein a space at the zone between the pair of the electrodes is fully filled with the second connecting element."
  ],
  "description_excerpt": "The present disclosure relates to a target substrate with micro semiconductor structures and, in particular, to a target substrate containing micro semiconductor structures, which are disposed by batch transferring.\n\nIn practice, the transferring of huge amount of micro LEDs encounters some technical thresholds and restrictions.\n\nIn the conventional manufacturing process of LED (having a length over 100 micrometers), a plurality of individually independent and arrayed LED dies are manufactured by a series processes (e.g. half cutting (electrical insulation), testing, and full cutting) after the epitaxial process. Then, a pick-up head is used to select and transfer the LED dies one by one to a carrier substrate. However, in the micronization of LEDs, for example, the edge length of the micro LED die is relatively smaller (e.g. 100 micron or less), so the pick-up head, which has limitation in scale minimization, cannot effectively pick up the micro LED dies. For another example, the micronization of the die size means that the number of LED dies fabricated by the same sized wafer can be greatly increased. Unfortunately, the conventional process of picking and transferring the LED dies one by one cannot meet the needs of huge amount of manufactured LED dies and will result in a very low yield.\n\nIn the industry, the micro contact printing technology has been applied to form a huge number of concave and convex patterns on the polymer material plate for correspondingly picking the micro LED dies. This method can achieve the requirement of transferring a huge number of micro LED dies.",
  "cpc": [
    "H10P 72/74",
    "B65G 47/90",
    "H01L 21/6835",
    "H01L 2221/68354",
    "H01L 2221/68363",
    "H01L 2221/68368",
    "H01L 25/0753",
    "H01L 2933/0066",
    "H01L 33/62",
    "H10D 86/441",
    "H10D 86/60",
    "H10H 20/0364",
    "H10H 20/83",
    "H10H 20/857",
    "H10P 72/7428",
    "H10P 72/7432",
    "H10P 72/7434",
    "H10W 72/0198",
    "H10W 90/00"
  ],
  "ipc": [
    "B65G 47/90",
    "H01L 21/683",
    "H01L 25/075",
    "H01L 33/62"
  ],
  "assignees": [
    "Ultra Display Technology Corp"
  ],
  "inventors": [
    "Hsien-Te Chen"
  ],
  "filing_date": "2018-09-05",
  "publication_date": "2020-12-22",
  "grant_date": "2020-12-22",
  "priority_date": "2017-09-06",
  "application_number": "US-201816121945-A",
  "family_id": "65518293",
  "cited_by_count": 1,
  "citations": [
    "US20170207193A1",
    "US20190006564A1",
    "US20170048976A1",
    "US20170256521A1",
    "US20190259728A1",
    "US20180286734A1"
  ]
}