Manufacturing method of semiconductor device

{
  "publication_number": "US2014318697A1",
  "country": "US",
  "kind": "A1",
  "title": "Manufacturing method of semiconductor device",
  "abstract": "A method for manufacturing a semiconductor device with a treated member, includes: subjecting an adhesive support having a substrate and an adhesive layer capable of increasing or decreasing in adhesiveness upon irradiation with an actinic ray or radiation to pattern exposure of the adhesive layer to provide a high adhesive region and a low adhesive region in the adhesive layer, adhering a first surface of a to-be-treated member to the adhesive layer of the adhesive support, applying a mechanical or chemical treatment to a second surface different from the first surface of the to-be-treated member to obtain a treated member, and detaching the first surface of the treated member from the adhesive layer of the adhesive support.",
  "claims": [
    "1. A method for manufacturing a semiconductor device with a treated member, comprising: subjecting an adhesive support having a substrate and an adhesive layer capable of increasing or decreasing in adhesiveness upon irradiation with an actinic ray or radiation to pattern exposure of the adhesive layer to provide a high adhesive region and a low adhesive region in the adhesive layer, adhering a first surface of a to-be-treated member to the adhesive layer of the adhesive support, applying a mechanical or chemical treatment to a second surface different from the first surface of the to-be-treated member to obtain a treated member, and detaching the first surface of the treated member from the adhesive layer of the adhesive support. 2. The method for manufacturing a semiconductor device as claimed in claim 1, wherein the pattern exposure is exposure making a central region of the adhesive layer as the low adhesive region and a peripheral region surrounding the central region of the adhesive layer as the high adhesive region. 3. A method for manufacturing a semiconductor device with a treated member, comprising: preparing an adhesive support having a substrate and an adhesive layer in which a high adhesive region and a low adhesive region are provided to form a dot pattern, adhering a first surface of a to-be-treated member to the adhesive layer of the adhesive support, applying a mechanical or chemical treatment to a second surface different from the first surface of the to-be-treated member to obtain a treated member, and detaching the first surface of the treated member from the adhesive layer of the adhesive support. 4. The method for manufacturing a semiconductor device as claimed in claim 3, wherein the adhesive layer is an adhesive layer capable of increasing or decreasing in adhesiveness upon irradiation with an actinic ray or radiation and the high and low adhesive regions forming the dot pattern are provided by performing dot-imagewise pattern exposure of the adhesive layer. 5. The method for manufacturing a semiconductor device as claimed in claim 4, wherein the dot-imagewise pattern exposure is exposure through a photomask having a dot pattern formed by a light-transmitting region and a light-shielding region. 6. The method for manufacturing a semiconductor device as claimed in claim 1, wherein: the to-be-treated member comprises a to-be-treated base material and a protective layer provided above the first surface of the to-be-treated base material, a surface of the protective layer opposite the to-be-treated base material is the first surface of the to-be-treated member, and a second surface different from the first surface of the to-be-treated base material is the second surface of the to-be-treated member. 7. The method for manufacturing a semiconductor device as claimed in claim 1, wherein the to-be-treated member is a silicon substrate or a compound semiconductor substrate. 8. The method for manufacturing a semiconductor device as claimed in claim 7, wherein the to-be-treated member is a silicon substrate, and the mechanical or chemical treatment comprises a thinning treatment of the silicon substrate. 9. The method for manufacturing a semiconductor device as claimed in claim 1, wherein the to-be-treated member is a silicon substrate having a thickness of 1 to 200 μm. 10. The method for manufacturing a semiconductor device as claimed in claim 7, wherein the to-be-treated member is a compound semiconductor substrate and the compound semiconductor substrate is an SiC substrate, an SiGe substrate, a ZnS substrate, a ZnSe substrate, a GaAs substrate, an InP substrate or a GaN substrate. 11. The method for manufacturing a semiconductor device as claimed in claim 1, wherein the adhesive layer is an adhesive layer capable of decreasing in adhesiveness upon irradiation with an actinic ray or radiation. 12. The method for manufacturing a semiconductor device as claimed in claim 1, wherein the treated member is detached from the adhesive support by sliding the treated member with respect to the adhesive layer of the adhesive support or separating the treated member from the adhesive layer of the adhesive support. 13. The method for manufacturing a semiconductor device as claimed in claim 1, wherein the adhesive layer has a multilayer structure. 14. The method for manufacturing a semiconductor device as claimed in claim 1, wherein the first surface of the treated member is detached from the adhesive layer of the adhesive support without applying any treatment to the adhesive layer of the adhesive support adhering to the treated member. 15. The method for manufacturing a semiconductor device as claimed in claim 1, wherein the adhesive layer contains a photopolymerization initiator and a polymerizable compound. 16. The method for manufacturing a semiconductor device as claimed in claim 15, wherein the adhesive layer further contains a resin. 17. The method for manufacturing a semiconductor device as claimed in claim 15, wherein the adhesive layer further contains a thermal polymerization initiator."
  ],
  "description_excerpt": "The present invention relates to a manufacturing method of a semiconductor device.\n\nConventionally, in the process of producing a semiconductor device such as IC and LSI, a number of IC chips are usually formed on a semiconductor silicon wafer and individualized by dicing.\n\nIn response to needs for more size reduction and higher performance of an electronic device, the IC chip mounted in an electronic device is also required to satisfy more size reduction and higher density packaging, but the high density packaging of integrated circuits in the surface direction of a silicon substrate is reaching the near limit.\n\nAs to the method for establishing an electrical connection from an integrated circuit within an IC chip to an external terminal of the IC chip, a wire bonding method has been heretofore widely known, but in order to realize size reduction of an IC chip, a method of providing a through hole in a silicon substrate so that a metal plug as an external terminal can be passed through the through hole and thereby connected to an integrated circuit (a method of forming a so-called through-silicon via (TSV)) is recently known. However, only with the method of forming a through-silicon via, the recent needs for higher density packaging in an IC chip cannot be sufficiently responded.\n\nIn consideration of these things, a technique of fabricating multilayer integrated circuits within an IC chip and thereby increasing the integration degree per unit area of a silicon substrate is known.",
  "cpc": [
    "H10P 72/10",
    "C09J 2301/502",
    "C09J 5/04",
    "C09J 7/22",
    "C09J 7/35",
    "H01L 21/673",
    "H10P 52/00",
    "H10P 72/74",
    "H10P 72/7402",
    "H10P 72/7418",
    "H10P 72/7422",
    "H10P 72/7432",
    "H10P 72/744",
    "H10P 72/7442",
    "H10P 95/00",
    "H10W 72/20"
  ],
  "ipc": [
    "H10P 72/10"
  ],
  "assignees": [
    "Fujifilm Corp"
  ],
  "inventors": [
    "Shiro Tan",
    "Kazuhiro Fujimaki",
    "Atsushi Nakamura",
    "Yu Iwai",
    "Ichiro Koyama"
  ],
  "filing_date": "2014-07-10",
  "publication_date": "2014-10-30",
  "priority_date": "2012-03-02",
  "application_number": "US-201414328191-A",
  "family_id": "49082883",
  "cited_by_count": 23,
  "citations": [
    "US9177921B2"
  ]
}