Manufacturing method of semiconductor device, and semiconductor device

{
  "publication_number": "US9673073B2",
  "country": "US",
  "kind": "B2",
  "title": "Manufacturing method of semiconductor device, and semiconductor device",
  "abstract": "Provided is a semiconductor device that suppresses the occurrence of defects due to photocorrosion. A method for manufacturing the semiconductor device includes the steps of: forming an insulating layer with a concave portion over a substrate; forming a conductive film over the insulating film and the inside of the concave portion; polishing and removing the conductive film positioned over the insulating layer; and cleaning the insulating layer in a light-shielded state. Between the step of polishing and the step of cleaning, or after the step of cleaning, the substrate SUB is moved by detecting the presence or absence of the substrate SUB in the light-shielded state using an infrared sensor.",
  "claims": [
    "1. A method for manufacturing a semiconductor device by using a semiconductor manufacturing apparatus, comprising steps of: (a) forming a first wiring over a semiconductor substrate; (b) forming an insulating film over the first wiring; (c) forming, in the insulating film, a hole connected to the first wiring and a trench connected to the hole; (d) forming a conductive film over the insulating film in order to fill in the hole and the trench; (e) polishing the conductive film outside the hole and the trench, thereby a second wiring is formed in the trench and a via is formed in the hole; and (f) cleaning surfaces of the insulating film and the second wiring, wherein the step (e) is performed in a polishing chamber of the semiconductor manufacturing apparatus, wherein the step (f) is performed in a cleaning chamber of the semiconductor manufacturing apparatus, wherein, while the semiconductor substrate is moved from the polishing chamber to the cleaning chamber, the presence of the semiconductor substrate is confirmed by using an infrared sensor, and wherein the steps (e) and (f) are performed in the light shielded state.",
    "2. A method for manufacturing a semiconductor device according to claim 1, wherein the conductive film includes a metal film and a barrier metal film, wherein the polishing chamber includes a first polishing chamber and a second polishing chamber, wherein the metal film is polished in the first polishing chamber, and wherein the barrier metal film is polished in the second polishing chamber.",
    "3. A method for manufacturing a semiconductor device according to claim 2, wherein the metal film is a Cu film.",
    "4. A method for manufacturing a semiconductor device according to claim 1, wherein the step (f) is performed by using pure water.",
    "5. A method for manufacturing a semiconductor device according to claim 1, wherein a detectable wavelength region by the infrared sensor is not less than 8 μm and not more than 10 μm.",
    "6. A method for manufacturing a semiconductor device by using a semiconductor manufacturing apparatus, comprising steps of: (a) forming a first wiring over a semiconductor substrate; (b) forming an insulating film over the first wiring; (c) forming, in the insulating film, a hole connected to the first wiring and a trench connected to the hole; (d) forming a conductive film over the insulating film in order to fill in the hole and the trench; (e) polishing the conductive film outside the hole and the trench, thereby a second wiring is formed in the trench and a via is formed in the hole; and (f) cleaning surfaces of the insulating film and the second wiring, wherein the step (e) is performed in a polishing chamber of the semiconductor manufacturing apparatus, wherein the step (f) is performed in a cleaning chamber of the semiconductor manufacturing apparatus, and wherein, while the semiconductor substrate is moved from the polishing chamber to the cleaning chamber, the presence of the semiconductor substrate is confirmed by using an infrared sensor, wherein the conductive film includes a metal film and a barrier metal film, wherein the polishing chamber includes a first polishing chamber and a second polishing chamber, wherein the metal film is polished in the first polishing chamber, and wherein the barrier metal film is polished in the second polishing chamber.",
    "7. A method for manufacturing a semiconductor device according to claim 6, wherein the metal film is a Cu film.",
    "8. A method for manufacturing a semiconductor device according to claim 6, wherein the step (f) is performed by using pure water."
  ],
  "description_excerpt": "The present invention relates to manufacturing methods of semiconductor devices, and semiconductor devices, and more particularly, to a technique applicable to a manufacturing method of a semiconductor device including a step of polishing and removing a conductive film, and a semiconductor device manufactured by the same.\n\nOne of processes used in a step of forming a wiring layer of a semiconductor device is chemical mechanical polishing (CMP). The outline of the step using CMP is as follows. First, a concave portion is formed in an insulating layer over a substrate, and a conductive film is formed over the inside of the concave portion and the insulating layer. Then, the conductive film over the insulating layer is polished and removed by use of a slurry. Thereafter, the substrate is cleaned.\n\nTechniques regarding the CMP include, for example, a technique disclosed in Patent Document 1 and a technique disclosed in Patent Document 2.\n\nAs disclosed in Patent Document 1, in forming a copper wiring by the CMP method, the copper wiring often undergoes photocorrosion. Further, as disclosed in Patent Documents 1 and 2, the emission of infrared light from the substrate is detected to determine the state of the CMP process.\n\n[Patent Document 1] Japanese Unexamined Patent Publication No. 2005-505122\n\n[Patent Document 2] WO 2008/044477\n\nSome materials for a conductive film can cause the photocorrosion in the conductive film. On the other hand, water is an essential factor in the CMP step. In order to suppress the photocorrosion in the CMP step, a series of processes needs to be performed in a light-shielded state.",
  "cpc": [
    "H10P 72/0412",
    "B65G 35/00",
    "H01L 21/02065",
    "H01L 21/02074",
    "H01L 21/67046",
    "H01L 21/67051",
    "H01L 21/67138",
    "H01L 21/67173",
    "H01L 21/67219",
    "H01L 21/67259",
    "H01L 21/6776",
    "H01L 21/76801",
    "H01L 21/76802",
    "H01L 21/76807",
    "H01L 21/7684",
    "H01L 21/76843",
    "H01L 21/76873",
    "H01L 21/76877",
    "H01L 22/10",
    "H10P 70/237",
    "H10P 70/277",
    "H10P 72/0414",
    "H10P 72/0444",
    "H10P 72/0456",
    "H10P 72/0472",
    "H10P 72/0606",
    "H10P 72/3314",
    "H10P 74/20",
    "H10W 20/033",
    "H10W 20/043",
    "H10W 20/056",
    "H10W 20/062",
    "H10W 20/071",
    "H10W 20/081",
    "H10W 20/084"
  ],
  "ipc": [
    "B65G 35/00",
    "H01L 21/02",
    "H01L 21/66",
    "H01L 21/67",
    "H01L 21/677",
    "H01L 21/768"
  ],
  "assignees": [
    "Renesas Electronics Corp"
  ],
  "inventors": [
    "Takayuki Nosaka"
  ],
  "filing_date": "2016-08-01",
  "publication_date": "2017-06-06",
  "grant_date": "2017-06-06",
  "priority_date": "2013-05-10",
  "application_number": "US-201615224804-A",
  "family_id": "51852675",
  "cited_by_count": 0,
  "citations": [
    "JP3165435B2",
    "US5236515A",
    "US5240546A",
    "US6447668B1",
    "US6475909B2",
    "JP2005505122A",
    "US6540587B1",
    "JP2002184839A",
    "US20030130754A1",
    "JP2004014999A",
    "JP2006114714A",
    "US20060222480A1",
    "WO2008044477A1",
    "US8574330B2",
    "US9428342B2"
  ]
}