Patent · US9899405B2 · B2 · US
Semiconductor device and manufacturing method thereof
- (11) Publication number
- US9899405B2
- (21) Application number
- 14/938,180
- (22) Filing date
- 2015-11-11
- (30) Priority date
- 2014-12-22
- (43) Publication date
- 2018-02-20
- (45) Date of grant
- 2018-02-20
- (51) IPC
- H10B 43/27; H10B 69/00; H10D 62/40; H01L 21/00; H01L 21/225
- (52) CPC
- H10P Generic processes or apparatus for the manufacture or treatment of devices covered by class H10: 32/141, 32/171
- H01L Semiconductor devices; electric solid state devices not otherwise provided for: 21/2255, 21/28282, 27/11582
- H10B Electronic memory devices: 41/30, 43/27
- H10D Inorganic electric semiconductor devices: 64/037
- (73) Assignee
- ASM IP Holding BV
- (72) Inventors
- Young Jae Kim; Seung Woo Choi; Yong Min Yoo
- (54) Title
- Semiconductor device and manufacturing method thereof
- (57) Abstract
Disclosed are a semiconductor device and a manufacturing method thereof. According to the semiconductor device and the manufacturing method thereof according to exemplary embodiments of the present invention, after the dopant source layer is uniformly deposited on a channel layer of the device with the 3-demensional vertical structure by the plasma-enhanced atomic layer deposition (PEALD) method, the deposited dopant source layer is heat-treated so that the dopants are diffused into the channel layer to function as charge carriers, thereby preventing the charges in the channel layer from being reduced. According to the exemplary embodiments of the present invention, the diffusion speed and concentration of the dopant may be controlled by forming the barrier layer between the channel layer and the dopant source layer.
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Claims (17)
- A manufacturing method of a semiconductor device, comprising: forming a non-conductive layer to be perpendicular to a surface of a substrate in a trench of a structure in which a gate layer and an interlayer insulation layer are alternately stacked; forming a channel layer to be perpendicular to the surface of the substrate at a lateral surface of the non-conductive layer; repeating a first gas-supplying cycle for forming a barrier layer to be perpendicular to the surface of the substrate at a lateral surface of the channel layer wherein the first gas-supplying cycle includes, while supplying oxygen gas and a purge gas to a reactor during a first time, a second time, a third time, and a fourth time: supplying a silicon source during the first time; and activating the oxygen gas with plasma during the third time, and wherein the second gas-supplying cycle includes a first sub-gas-supplying cycle and a second sub-gas-supplying cycle, wherein, while supplying the oxygen gas and the purge gas to the reactor during a fifth time, a sixth time, a seventh time, an eighth time, a ninth time, and a tenth time, the first sub-gas-supplying cycle includes a step of supplying a silicon source gas during the fifth time without supplying the plasma and a step of stopping supplying of the silicon source gas during the sixth time, and the second sub-gas-supplying cycle includes a step of supplying phosphorous source gas during the seventh time and a step of supplying plasma during the ninth time; and repeating a second gas-supplying cycle for forming a source layer, comprising one or more dopants, at a lateral surface of the barrier layer, wherein the first gas-supplying cycle and the second gas-supplying cycle are performed by an atomic layer deposition method, and wherein the one or more dopants diffuse through the barrier layer to the channel layer.
- The manufacturing method of the semiconductor device of claim 1, wherein a number of repetitions of the first sub-gas-supplying cycle and a number of repetitions of the second sub-gas-supplying cycle are different.
- The manufacturing method of the semiconductor device of claim 1, further comprising repeating a third gas-supplying cycle for forming a capping layer at a lateral surface of the source layer.
- The manufacturing method of the semiconductor device of claim 3, wherein the third gas-supplying cycle includes: while supplying the oxygen gas and the purge gas to the reactor during an eleventh time, a twelfth time, a thirteenth time, and a fourteenth time, supplying the silicon source during the eleventh time; and activating the oxygen gas with the plasma during the thirteenth time.
- The manufacturing method of the semiconductor device of claim 3, further comprising performing heat treatment to the semiconductor device.
- The manufacturing method of the semiconductor device of claim 4, wherein conditions of the first gas-supplying cycle and the third gas-supplying cycle are different.
- The manufacturing method of the semiconductor device of claim 6, wherein the plasma powers supplied during the first gas-supplying cycle and the third gas-supplying cycle are different.
- The manufacturing method of the semiconductor device of claim 6, wherein the thickness of the films formed in the first gas-supplying cycle and the third gas-supplying cycle are different.
- The manufacturing method of the semiconductor device of claim 1, further comprising performing heat treatment to the semiconductor device to cause the one or more dopants to diffuse from the source layer to the channel layer.
- The manufacturing method of the semiconductor device of claim 1, wherein the forming of the channel layer includes forming the channel layer as a polysilicon layer.
- A manufacturing method of a semiconductor device, comprising: forming a non-conductive layer to be perpendicular to a surface of a substrate in a trench of a structure in which a gate layer and an interlayer insulation layer are alternately stacked; forming a channel layer to be perpendicular to the surface of the substrate at a lateral surface of the non-conductive layer; repeating a first gas-supplying cycle for forming a barrier layer to be perpendicular to the surface of the substrate at a lateral surface of the channel layer; and repeating a second gas-supplying cycle for forming a source layer, comprising one or more dopants, at a lateral surface of the barrier layer, wherein the first gas-supplying cycle and the second gas-supplying cycle are performed by an atomic layer deposition method, and wherein the one or more dopants diffuse through the barrier layer to the channel layer, wherein the first gas-supplying cycle includes, while supplying oxygen gas and a purge gas to a reactor during a first time, a second time, a third time, and a fourth time: supplying a silicon source during the first time; and activating the oxygen gas with plasma during the third time, repeating a third gas-supplying cycle for forming a capping layer at a lateral surface of the source layer, and wherein the third gas-supplying cycle includes: while supplying the oxygen gas and the purge gas to the reactor during an eleventh time, a twelfth time, a thirteenth time, and a fourteenth time, supplying the silicon source during the eleventh time; and activating the oxygen gas with the plasma during the thirteenth time.
- The manufacturing method of the semiconductor device of claim 11, wherein conditions of the first gas-supplying cycle and the third gas-supplying cycle are different.
- The manufacturing method of the semiconductor device of claim 12, wherein the plasma powers supplied during the first gas-supplying cycle and the third gas-supplying cycle are different.
- The manufacturing method of the semiconductor device of claim 12, wherein the thickness of the films formed in the first gas-supplying cycle and the third gas-supplying cycle are different.
- The manufacturing method of the semiconductor device of claim 11, further comprising performing heat treatment to the semiconductor device to cause the one or more dopants to diffuse from the source layer to the channel layer.
- The manufacturing method of the semiconductor device of claim 11, further comprising performing heat treatment to the semiconductor device.
- The manufacturing method of the semiconductor device of claim 11, wherein the forming of the channel layer includes forming the channel layer as a polysilicon layer.
Description
(a) Field of the Invention
The present invention relates to a semiconductor device and a manufacturing method thereof.
(b) Description of the Related Art
Recently, although a flash memory semiconductor has been highly integrated, there is a limit in improvement of the degree of integration due to a physical limit such as an increase of current leakage in a channel according to a conventional 2-dimentional gate structure.
Thus, a novel structure that is able to substitute for the conventional 2-dimentional gate structure, for example, a 3-dimentional vertical NAND (3D VNAND) flash memory that overcomes the limit of the degree of integration by vertically stacking gate structures, has attracted attention. However, since charge distribution is non-uniform in the vertically stacked polysilicon channel layer of the 3D VNAND device, the 3D VNAND device may not be normally operated.
The above information disclosed in this Background section is only to enhance the understanding of the background of the invention and therefore it may contain information that does not form the prior art that is already known in this country to a person of ordinary skill in the art.
The present invention has been made in an effort to provide a semiconductor device and a manufacturing method thereof that may prevent a reduction of charge from being able to occur in a channel layer of a 3-dimentional vertical NAND flash memory.
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Record as JSON
{
"publication_number": "US9899405B2",
"country": "US",
"kind": "B2",
"title": "Semiconductor device and manufacturing method thereof",
"abstract": "Disclosed are a semiconductor device and a manufacturing method thereof. According to the semiconductor device and the manufacturing method thereof according to exemplary embodiments of the present invention, after the dopant source layer is uniformly deposited on a channel layer of the device with the 3-demensional vertical structure by the plasma-enhanced atomic layer deposition (PEALD) method, the deposited dopant source layer is heat-treated so that the dopants are diffused into the channel layer to function as charge carriers, thereby preventing the charges in the channel layer from being reduced. According to the exemplary embodiments of the present invention, the diffusion speed and concentration of the dopant may be controlled by forming the barrier layer between the channel layer and the dopant source layer.",
"claims": [
"1. A manufacturing method of a semiconductor device, comprising: forming a non-conductive layer to be perpendicular to a surface of a substrate in a trench of a structure in which a gate layer and an interlayer insulation layer are alternately stacked; forming a channel layer to be perpendicular to the surface of the substrate at a lateral surface of the non-conductive layer; repeating a first gas-supplying cycle for forming a barrier layer to be perpendicular to the surface of the substrate at a lateral surface of the channel layer wherein the first gas-supplying cycle includes, while supplying oxygen gas and a purge gas to a reactor during a first time, a second time, a third time, and a fourth time: supplying a silicon source during the first time; and activating the oxygen gas with plasma during the third time, and wherein the second gas-supplying cycle includes a first sub-gas-supplying cycle and a second sub-gas-supplying cycle, wherein, while supplying the oxygen gas and the purge gas to the reactor during a fifth time, a sixth time, a seventh time, an eighth time, a ninth time, and a tenth time, the first sub-gas-supplying cycle includes a step of supplying a silicon source gas during the fifth time without supplying the plasma and a step of stopping supplying of the silicon source gas during the sixth time, and the second sub-gas-supplying cycle includes a step of supplying phosphorous source gas during the seventh time and a step of supplying plasma during the ninth time; and repeating a second gas-supplying cycle for forming a source layer, comprising one or more dopants, at a lateral surface of the barrier layer, wherein the first gas-supplying cycle and the second gas-supplying cycle are performed by an atomic layer deposition method, and wherein the one or more dopants diffuse through the barrier layer to the channel layer.",
"2. The manufacturing method of the semiconductor device of claim 1, wherein a number of repetitions of the first sub-gas-supplying cycle and a number of repetitions of the second sub-gas-supplying cycle are different.",
"3. The manufacturing method of the semiconductor device of claim 1, further comprising repeating a third gas-supplying cycle for forming a capping layer at a lateral surface of the source layer.",
"4. The manufacturing method of the semiconductor device of claim 3, wherein the third gas-supplying cycle includes: while supplying the oxygen gas and the purge gas to the reactor during an eleventh time, a twelfth time, a thirteenth time, and a fourteenth time, supplying the silicon source during the eleventh time; and activating the oxygen gas with the plasma during the thirteenth time.",
"5. The manufacturing method of the semiconductor device of claim 3, further comprising performing heat treatment to the semiconductor device.",
"6. The manufacturing method of the semiconductor device of claim 4, wherein conditions of the first gas-supplying cycle and the third gas-supplying cycle are different.",
"7. The manufacturing method of the semiconductor device of claim 6, wherein the plasma powers supplied during the first gas-supplying cycle and the third gas-supplying cycle are different.",
"8. The manufacturing method of the semiconductor device of claim 6, wherein the thickness of the films formed in the first gas-supplying cycle and the third gas-supplying cycle are different.",
"9. The manufacturing method of the semiconductor device of claim 1, further comprising performing heat treatment to the semiconductor device to cause the one or more dopants to diffuse from the source layer to the channel layer.",
"10. The manufacturing method of the semiconductor device of claim 1, wherein the forming of the channel layer includes forming the channel layer as a polysilicon layer.",
"11. A manufacturing method of a semiconductor device, comprising: forming a non-conductive layer to be perpendicular to a surface of a substrate in a trench of a structure in which a gate layer and an interlayer insulation layer are alternately stacked; forming a channel layer to be perpendicular to the surface of the substrate at a lateral surface of the non-conductive layer; repeating a first gas-supplying cycle for forming a barrier layer to be perpendicular to the surface of the substrate at a lateral surface of the channel layer; and repeating a second gas-supplying cycle for forming a source layer, comprising one or more dopants, at a lateral surface of the barrier layer, wherein the first gas-supplying cycle and the second gas-supplying cycle are performed by an atomic layer deposition method, and wherein the one or more dopants diffuse through the barrier layer to the channel layer, wherein the first gas-supplying cycle includes, while supplying oxygen gas and a purge gas to a reactor during a first time, a second time, a third time, and a fourth time: supplying a silicon source during the first time; and activating the oxygen gas with plasma during the third time, repeating a third gas-supplying cycle for forming a capping layer at a lateral surface of the source layer, and wherein the third gas-supplying cycle includes: while supplying the oxygen gas and the purge gas to the reactor during an eleventh time, a twelfth time, a thirteenth time, and a fourteenth time, supplying the silicon source during the eleventh time; and activating the oxygen gas with the plasma during the thirteenth time.",
"12. The manufacturing method of the semiconductor device of claim 11, wherein conditions of the first gas-supplying cycle and the third gas-supplying cycle are different.",
"13. The manufacturing method of the semiconductor device of claim 12, wherein the plasma powers supplied during the first gas-supplying cycle and the third gas-supplying cycle are different.",
"14. The manufacturing method of the semiconductor device of claim 12, wherein the thickness of the films formed in the first gas-supplying cycle and the third gas-supplying cycle are different.",
"15. The manufacturing method of the semiconductor device of claim 11, further comprising performing heat treatment to the semiconductor device to cause the one or more dopants to diffuse from the source layer to the channel layer.",
"16. The manufacturing method of the semiconductor device of claim 11, further comprising performing heat treatment to the semiconductor device.",
"17. The manufacturing method of the semiconductor device of claim 11, wherein the forming of the channel layer includes forming the channel layer as a polysilicon layer."
],
"description_excerpt": "(a) Field of the Invention\n\nThe present invention relates to a semiconductor device and a manufacturing method thereof.\n\n(b) Description of the Related Art\n\nRecently, although a flash memory semiconductor has been highly integrated, there is a limit in improvement of the degree of integration due to a physical limit such as an increase of current leakage in a channel according to a conventional 2-dimentional gate structure.\n\nThus, a novel structure that is able to substitute for the conventional 2-dimentional gate structure, for example, a 3-dimentional vertical NAND (3D VNAND) flash memory that overcomes the limit of the degree of integration by vertically stacking gate structures, has attracted attention. However, since charge distribution is non-uniform in the vertically stacked polysilicon channel layer of the 3D VNAND device, the 3D VNAND device may not be normally operated.\n\nThe above information disclosed in this Background section is only to enhance the understanding of the background of the invention and therefore it may contain information that does not form the prior art that is already known in this country to a person of ordinary skill in the art.\n\nThe present invention has been made in an effort to provide a semiconductor device and a manufacturing method thereof that may prevent a reduction of charge from being able to occur in a channel layer of a 3-dimentional vertical NAND flash memory.",
"cpc": [
"H10P 32/141",
"H01L 21/2255",
"H01L 21/28282",
"H01L 27/11582",
"H10B 41/30",
"H10B 43/27",
"H10D 64/037",
"H10P 32/171"
],
"ipc": [
"H10B 43/27",
"H10B 69/00",
"H10D 62/40",
"H01L 21/00",
"H01L 21/225"
],
"assignees": [
"ASM IP Holding BV"
],
"inventors": [
"Young Jae Kim",
"Seung Woo Choi",
"Yong Min Yoo"
],
"filing_date": "2015-11-11",
"publication_date": "2018-02-20",
"grant_date": "2018-02-20",
"priority_date": "2014-12-22",
"application_number": "US-201514938180-A",
"family_id": "56130365",
"cited_by_count": 467,
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}
Record 3,578 of 8,000 in Patents full text (MLC-0201). Request the full dataset.