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Patent · US8946830B2 · B2 · US

Metal oxide protective layer for a semiconductor device

(11) Publication number
US8946830B2
(21) Application number
13/439,528
(22) Filing date
2012-04-04
(30) Priority date
2012-04-04
(43) Publication date
2015-02-03
(45) Date of grant
2015-02-03
(51) IPC
H01L 29/78; H10P 14/24; H10P 14/60; H10P 14/692
(52) CPC
  • H10D Inorganic electric semiconductor devices: 64/0135, 64/01342, 64/685, 64/691
  • C23C Coating metallic material; coating material with metallic material; surface treatment of metallic material by diffusion into the surface, by chemical conversion or substitution; coating by vacuum evaporation, by sputtering, by ion implantation or by chemical vapour deposition, in general: 16/405, 16/409, 16/45527
  • H10P Generic processes or apparatus for the manufacture or treatment of devices covered by class H10: 14/6339, 14/6548, 14/662, 14/69394, 14/69398
(73) Assignee
ASM IP Holding BV
(72) Inventors
Sung-Hoon Jung
(54) Title
Metal oxide protective layer for a semiconductor device
(57) Abstract

Embodiments related to metal oxide protective layers formed on a surface of a halogen-sensitive metal-including layer present on a substrate processed in a semiconductor processing reactor are provided. In one example, a method for forming a metal oxide protective layer is provided. The example method includes forming a metal-including active species on the halogen-sensitive metal-including layer, the metal-including active species being derived from a non-halogenated metal oxide precursor. The example method also includes reacting an oxygen-containing reactant with the metal-including active species to form the metal oxide protective layer.

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Claims (20)

  1. A method of forming a metal oxide protective layer on a surface of a halogen-sensitive metal-including layer present on a substrate processed in a semiconductor processing reactor, the method comprising: forming a metal-including active species on the halogen-sensitive metal-including layer, the metal-including active species being derived from a non-halogenated metal oxide precursor, reacting an oxygen-containing reactant with the metal-including active species to form the metal oxide protective layer; and forming a metal-including film comprising material selected from the group consisting of a metal-including dielectric material and a metal-including barrier material and comprising residual halogen atoms on top of the metal oxide protective layer by exposing the metal oxide protective layer to a halogen-including metal compound.
  2. The method of claim 1, where the halogen-sensitive metal-including layer comprises an alkaline earth metal-including metal oxide.
  3. The method of claim 1, wherein the metal oxide protecting layer comprises TiO 2.
  4. The method of claim 1, where the metal-including film includes oxygen or nitrogen.
  5. The method of claim 1, where the halogen-including metal compound includes a transition metal.
  6. The method of claim 1, where the oxygen-containing reactant is selected from the group consisting of O 2, O 3, and H 2 O, and where the non-halogenated metal oxide precursor is selected from the group consisting of metal alkoxides, metal amino complexes, metal silanes, and metal cyclopentadiene complexes.
  7. The method of claim 1, further comprising depositing the metal oxide protective layer as a film having a thickness of 20 Å or less.
  8. The method of claim 1, further comprising: after forming the metal-including active species on the halogen-sensitive metal-including layer, removing the non-halogenated metal oxide precursor from the reactor; and after removing the non-halogenated metal oxide precursor from the reactor, supplying the oxygen-containing reactant to the halogen-sensitive metal-including layer so that the metal-including active species reacts with the oxygen-containing reactant.
  9. The method of claim 1, where the halogen-sensitive metal-including layer is sensitive to chlorine and where the non-halogenated metal oxide precursor comprises a non-chlorinated metal oxide precursor.
  10. A method of fabricating a semiconductor device, comprising: forming a halogen-sensitive high-K dielectric material on a substrate; forming a metal oxide protective layer on the halogen-sensitive high-K dielectric material by reacting a metal-including active species derived from a non-halogenated metal oxide precursor with an oxygen-containing reactant; and forming a metal-including film comprising material selected from the group consisting of a metal-including dielectric material and a metal-including barrier material and comprising residual halogen atoms on the metal oxide protective layer by exposing the metal oxide protective layer to a halogen-including metal compound.
  11. The method of claim 10, where forming the metal oxide protective layer comprises, in a reactor for processing a substrate: forming the metal-including active species from a non-halogenated metal oxide precursor on the halogen-sensitive high-K dielectric material; after forming the metal-including active species on the halogen-sensitive high-K dielectric material, removing the non-halogenated metal oxide precursor from the reactor; after removing the non-halogenated metal oxide precursor from the reactor, supplying the oxygen-containing reactant to the exposed surface; and reacting the oxygen-containing reactant with the metal-including active species to form the metal oxide protective layer.
  12. The method of claim 10, where the halogen-sensitive high-K dielectric material comprises an alkaline earth metal-including metal oxide and where the metal-including film includes oxygen or nitrogen.
  13. The method of claim 10, where the halogen-including metal compound includes a transition metal.
  14. The method of claim 10, where the oxygen-containing reactant is selected from the group consisting of O 2, O 3, and H 2 O, and where the non-halogenated metal oxide precursor is a non-chlorinated metal oxide precursor selected from the group consisting of metal alkoxides, metal amino complexes, metal silanes, and metal cyclopentadiene complexes.
  15. The method of claim 10, where forming the metal oxide protective layer on the halogen-sensitive high-K dielectric material comprises forming the metal oxide comprising TiO 2.
  16. A gate assembly for a semiconductor device, comprising: a first dielectric layer comprising a halogen-sensitive high-K dielectric material; a metal oxide protective layer formed on top of the halogen-sensitive high-K dielectric material; and a film comprising material selected from the group consisting of a metal-including dielectric material and a metal-including barrier material and comprising residual halogen atoms formed on top of the metal oxide protective layer.
  17. The device of claim 16, where the film comprising residual halogen atoms comprises a metal-including film formed on top of the metal oxide protective layer via reaction of a halogen-including metal compound.
  18. The device of claim 17, where the film comprising residual halogen atoms comprises a transition metal compound.
  19. The device of claim 16, where the halogen-sensitive high-K dielectric material comprises an alkaline earth metal-including metal oxide.
  20. The device of claim 16, where the metal oxide protective layer comprising TiO 2.

Description

Some semiconductor devices employ a high-K dielectric material (relative to SiO 2) as a gate dielectric to achieve a desired equivalent oxide thickness (EOT) with a film that is sufficiently thick to avoid undesirable leakage. However, some high-K dielectric materials may be incompatible with subsequently deposited materials. In some settings, the effect of such incompatibilities may compromise device performance.

Various embodiments are disclosed herein that relate to forming a metal oxide protective layer on a surface of a halogen-sensitive metal-including layer present on a substrate processed in a semiconductor processing reactor. For example, one embodiment provides a method for forming a metal oxide protective layer comprising forming a metal-including active species on the halogen-sensitive metal-including layer, the metal-including active species being derived from a non-halogenated metal oxide precursor. The example method also includes reacting an oxygen-containing reactant with the metal-including active species to form the metal oxide protective layer.

This Summary is provided to introduce a selection of concepts in a simplified form that are further described below in the Detailed Description. This Summary is not intended to identify key features or essential features of the claimed subject matter, nor is it intended to be used to limit the scope of the claimed subject matter. Furthermore, the claimed subject matter is not limited to implementations that solve any or all disadvantages noted in any part of this disclosure.

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Record as JSON 
{
  "publication_number": "US8946830B2",
  "country": "US",
  "kind": "B2",
  "title": "Metal oxide protective layer for a semiconductor device",
  "abstract": "Embodiments related to metal oxide protective layers formed on a surface of a halogen-sensitive metal-including layer present on a substrate processed in a semiconductor processing reactor are provided. In one example, a method for forming a metal oxide protective layer is provided. The example method includes forming a metal-including active species on the halogen-sensitive metal-including layer, the metal-including active species being derived from a non-halogenated metal oxide precursor. The example method also includes reacting an oxygen-containing reactant with the metal-including active species to form the metal oxide protective layer.",
  "claims": [
    "1. A method of forming a metal oxide protective layer on a surface of a halogen-sensitive metal-including layer present on a substrate processed in a semiconductor processing reactor, the method comprising: forming a metal-including active species on the halogen-sensitive metal-including layer, the metal-including active species being derived from a non-halogenated metal oxide precursor, reacting an oxygen-containing reactant with the metal-including active species to form the metal oxide protective layer; and forming a metal-including film comprising material selected from the group consisting of a metal-including dielectric material and a metal-including barrier material and comprising residual halogen atoms on top of the metal oxide protective layer by exposing the metal oxide protective layer to a halogen-including metal compound.",
    "2. The method of claim 1, where the halogen-sensitive metal-including layer comprises an alkaline earth metal-including metal oxide.",
    "3. The method of claim 1, wherein the metal oxide protecting layer comprises TiO 2.",
    "4. The method of claim 1, where the metal-including film includes oxygen or nitrogen.",
    "5. The method of claim 1, where the halogen-including metal compound includes a transition metal.",
    "6. The method of claim 1, where the oxygen-containing reactant is selected from the group consisting of O 2, O 3, and H 2 O, and where the non-halogenated metal oxide precursor is selected from the group consisting of metal alkoxides, metal amino complexes, metal silanes, and metal cyclopentadiene complexes.",
    "7. The method of claim 1, further comprising depositing the metal oxide protective layer as a film having a thickness of 20 Å or less.",
    "8. The method of claim 1, further comprising: after forming the metal-including active species on the halogen-sensitive metal-including layer, removing the non-halogenated metal oxide precursor from the reactor; and after removing the non-halogenated metal oxide precursor from the reactor, supplying the oxygen-containing reactant to the halogen-sensitive metal-including layer so that the metal-including active species reacts with the oxygen-containing reactant.",
    "9. The method of claim 1, where the halogen-sensitive metal-including layer is sensitive to chlorine and where the non-halogenated metal oxide precursor comprises a non-chlorinated metal oxide precursor.",
    "10. A method of fabricating a semiconductor device, comprising: forming a halogen-sensitive high-K dielectric material on a substrate; forming a metal oxide protective layer on the halogen-sensitive high-K dielectric material by reacting a metal-including active species derived from a non-halogenated metal oxide precursor with an oxygen-containing reactant; and forming a metal-including film comprising material selected from the group consisting of a metal-including dielectric material and a metal-including barrier material and comprising residual halogen atoms on the metal oxide protective layer by exposing the metal oxide protective layer to a halogen-including metal compound.",
    "11. The method of claim 10, where forming the metal oxide protective layer comprises, in a reactor for processing a substrate: forming the metal-including active species from a non-halogenated metal oxide precursor on the halogen-sensitive high-K dielectric material; after forming the metal-including active species on the halogen-sensitive high-K dielectric material, removing the non-halogenated metal oxide precursor from the reactor; after removing the non-halogenated metal oxide precursor from the reactor, supplying the oxygen-containing reactant to the exposed surface; and reacting the oxygen-containing reactant with the metal-including active species to form the metal oxide protective layer.",
    "12. The method of claim 10, where the halogen-sensitive high-K dielectric material comprises an alkaline earth metal-including metal oxide and where the metal-including film includes oxygen or nitrogen.",
    "13. The method of claim 10, where the halogen-including metal compound includes a transition metal.",
    "14. The method of claim 10, where the oxygen-containing reactant is selected from the group consisting of O 2, O 3, and H 2 O, and where the non-halogenated metal oxide precursor is a non-chlorinated metal oxide precursor selected from the group consisting of metal alkoxides, metal amino complexes, metal silanes, and metal cyclopentadiene complexes.",
    "15. The method of claim 10, where forming the metal oxide protective layer on the halogen-sensitive high-K dielectric material comprises forming the metal oxide comprising TiO 2.",
    "16. A gate assembly for a semiconductor device, comprising: a first dielectric layer comprising a halogen-sensitive high-K dielectric material; a metal oxide protective layer formed on top of the halogen-sensitive high-K dielectric material; and a film comprising material selected from the group consisting of a metal-including dielectric material and a metal-including barrier material and comprising residual halogen atoms formed on top of the metal oxide protective layer.",
    "17. The device of claim 16, where the film comprising residual halogen atoms comprises a metal-including film formed on top of the metal oxide protective layer via reaction of a halogen-including metal compound.",
    "18. The device of claim 17, where the film comprising residual halogen atoms comprises a transition metal compound.",
    "19. The device of claim 16, where the halogen-sensitive high-K dielectric material comprises an alkaline earth metal-including metal oxide.",
    "20. The device of claim 16, where the metal oxide protective layer comprising TiO 2."
  ],
  "description_excerpt": "Some semiconductor devices employ a high-K dielectric material (relative to SiO 2) as a gate dielectric to achieve a desired equivalent oxide thickness (EOT) with a film that is sufficiently thick to avoid undesirable leakage. However, some high-K dielectric materials may be incompatible with subsequently deposited materials. In some settings, the effect of such incompatibilities may compromise device performance.\n\nVarious embodiments are disclosed herein that relate to forming a metal oxide protective layer on a surface of a halogen-sensitive metal-including layer present on a substrate processed in a semiconductor processing reactor. For example, one embodiment provides a method for forming a metal oxide protective layer comprising forming a metal-including active species on the halogen-sensitive metal-including layer, the metal-including active species being derived from a non-halogenated metal oxide precursor. The example method also includes reacting an oxygen-containing reactant with the metal-including active species to form the metal oxide protective layer.\n\nThis Summary is provided to introduce a selection of concepts in a simplified form that are further described below in the Detailed Description. This Summary is not intended to identify key features or essential features of the claimed subject matter, nor is it intended to be used to limit the scope of the claimed subject matter. Furthermore, the claimed subject matter is not limited to implementations that solve any or all disadvantages noted in any part of this disclosure.",
  "cpc": [
    "H10D 64/0135",
    "C23C 16/405",
    "C23C 16/409",
    "C23C 16/45527",
    "H10D 64/01342",
    "H10D 64/685",
    "H10D 64/691",
    "H10P 14/6339",
    "H10P 14/6548",
    "H10P 14/662",
    "H10P 14/69394",
    "H10P 14/69398"
  ],
  "ipc": [
    "H01L 29/78",
    "H10P 14/24",
    "H10P 14/60",
    "H10P 14/692"
  ],
  "assignees": [
    "ASM IP Holding BV"
  ],
  "inventors": [
    "Sung-Hoon Jung"
  ],
  "filing_date": "2012-04-04",
  "publication_date": "2015-02-03",
  "grant_date": "2015-02-03",
  "priority_date": "2012-04-04",
  "application_number": "US-201213439528-A",
  "family_id": "49291631",
  "cited_by_count": 510,
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