Structure and method to fabricate ultra-thin si channel devices

{
  "publication_number": "US2004241981A1",
  "country": "US",
  "kind": "A1",
  "title": "Structure and method to fabricate ultra-thin si channel devices",
  "abstract": "A method for preventing polysilicon stringer formation under the active device area of an isolated ultra-thin Si channel device is provided. The method utilizes a chemical oxide removal (COR) processing step to prevent stinger formation, instead of a conventional wet etch process wherein a chemical etchant such as HF is employed. A silicon-on-insulator (SOI) structure is also provided. The structure includes at least a top Si-containing layer located on a buried insulating layer; and an oxide filled trench isolation region located in the top Si-containing layer and a portion of the buried insulating layer. No undercut regions are located beneath the top Si-containing layer.",
  "claims": [
    "1. A method to fabricate ultra-thin Si channel devices comprising the steps of: providing a structure having at least one trench region that includes a recessed, deposited oxide fill material, said at least one trench region is located in a nitride pad layer, a thermally grown oxide pad layer, a top-Si-containing layer of an SOI substrate and a portion of a buried insulating layer of said SOI substrate; removing said nitride pad layer to expose said thermally grown oxide pad layer; and removing said exposed thermally grown oxide pad layer and a portion of said recessed, deposited oxide fill material utilizing a chemical oxide removal process, said chemical oxide removal process etches the thermally grown oxide at a faster rate than the recessed, deposited oxide to provide a silicon-on-insulator structure having an oxide filled trench isolation region comprising said recessed, deposited oxide that has a height that is above an upper surface of said top Si-containing layer and a sloping oxide structure, wherein no undercut regions are located beneath the top Si-containing layer. 2. The method of claim 1 wherein said recessed, deposited oxide fill material is formed by first depositing a deposited oxide layer atop the structure; planarizing the deposited oxide layer to an upper surface of the pad nitride layer; and recessing the planarized deposited oxide layer utilizing a timed etching process. 3. The method of claim 1 wherein said removing of said pad nitride layer is performed utilizing an etching step that selectively removes nitride as compared to oxide. 4. The method of claim 1 wherein said chemical oxide removal process is conducted in a gaseous mixture of HF and ammonia. 5. The method of claim 4 wherein said gaseous mixture of HF and ammonia is used in a ratio of HF to ammonia of from about 1:10 to about 10:1. 6. The method of claim 1 wherein said chemical oxide removal process is conducted at a pressure of about 30 mTorr or less and at temperature of about 25° C. 7 - 10. (Cancelled). 11. The method of claim 1 further comprising forming a transistor on the top Si-containing layer abutting the oxide filled trench isolation region. 12 - 20. (Cancelled). 21. A method to fabricate ultra-thin Si channel devices comprising the steps of: providing a structure having at least one trench region that includes a recessed, deposited oxide fill material, said at least one trench region is located in a nitride pad layer, a thermally grown oxide pad layer, a top-Si-containing layer of an SOI substrate and a portion of a buried insulating layer of said SOI substrate; removing said nitride pad layer to expose said thermally grown oxide pad layer; and removing said exposed thermally grown oxide pad layer and a portion of said recessed, deposited oxide fill material utilizing a chemical oxide removal process, said chemical oxide removal process etches the thermally grown oxide at a faster rate than the recessed, deposited oxide to provide a silicon-on-insulator structure having an oxide filled trench isolation region comprising said recessed, deposited oxide that has a height that is below an upper surface of said top Si-containing layer and a sloping oxide structure, wherein no undercut regions are located beneath the top Si-containing layer. 22. The method of claim 21 wherein said recessed, deposited oxide fill material is formed by first depositing a deposited oxide layer atop the structure; planarizing the deposited oxide layer to an upper surface of the pad nitride layer; and recessing the planarized deposited oxide layer utilizing a timed etching process. 23. The method of claim 21 wherein said removing of said pad nitride layer is performed utilizing an etching step that selectively removes nitride as compared to oxide. 24. The method of claim 21 wherein said chemical oxide removal process is conducted in a gaseous mixture of HF and ammonia. 25. The method of claim 24 wherein said gaseous mixture of HE and ammonia is used in a ratio of HF to ammonia of from about 1:10 to about 10:1. 26. The method of claim 21 wherein said chemical oxide removal process is conducted at a pressure of about 30 mTorr or less and at temperature of about 25° C. 27. The method of claim 21 further comprising forming a transistor on the top Si-containing layer abutting the oxide filled trench isolation region."
  ],
  "cpc": [
    "H10D 86/01",
    "H10P 90/1906",
    "H10W 10/014",
    "H10W 10/061",
    "H10W 10/17",
    "H10W 10/181"
  ],
  "assignees": [
    "IBM"
  ],
  "filing_date": "2003-06-02",
  "publication_date": "2004-12-02",
  "priority_date": "2003-06-02",
  "application_number": "US-25006903-A",
  "family_id": "33449437",
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}