Patent · US8946592B2 · B2 · US
Laser processing method and laser processing apparatus
- (11) Publication number
- US8946592B2
- (21) Application number
- 13/432,833
- (22) Filing date
- 2012-03-28
- (30) Priority date
- 2000-09-13
- (43) Publication date
- 2015-02-03
- (45) Date of grant
- 2015-02-03
- (51) IPC
- B23K 101/40; B23K 26/00; B23K 26/03; B23K 26/04; B23K 26/06; B23K 26/073; B23K 26/08; B23K 26/36; B23K 26/38; B23K 26/40; B28D 5/00; C03B 33/023; C03B 33/08; C03B 33/09; C03B 33/10; C03C 23/00; G02F 1/1368; H01L 21/301
- (52) CPC
- H10P Generic processes or apparatus for the manufacture or treatment of devices covered by class H10: 54/00, 72/7402, 72/7416
- B23K Soldering or unsoldering; welding; cladding or plating by soldering or welding; cutting by applying heat locally, e.g. flame cutting; working by laser beam: 20/023, 20/16, 20/233, 20/26, 2101/40, 2103/50, 2201/40, 26/0057, 26/03, 26/032, 26/034, 26/04, 26/046, 26/0624, 26/0635, 26/0656, 26/066, 26/073, 26/08, 26/0853, 26/16, 26/36, 26/364, 26/367, 26/38, 26/40, 26/4075, 26/53, 26/70, 26/702
- B28D Working stone or stone-like materials: 5/0011
- B65G Transport or storage devices, e.g. conveyors for loading or tipping, shop conveyor systems or pneumatic tube conveyors: 2249/04
- C03B Manufacture, shaping, or supplementary processes: 33/0222, 33/023, 33/082, 33/091, 33/102
- C03C Chemical composition of glasses, glazes or vitreous enamels; surface treatment of glass; surface treatment of fibres or filaments made from glass, minerals or slags; joining glass to glass or other materials: 23/0025
- G02F Optical devices or arrangements for the control of light by modification of the optical properties of the media of the elements involved therein; non-linear optics; frequency-changing of light; optical logic elements; optical analogue/digital converters: 1/1368
- Y02P Climate change mitigation technologies in the production or processing of goods: 40/57
- Y10T Technical subjects covered by former us classification: 29/49144, 83/0341
- (73) Assignee
- Hamamatsu Photonics KK
- (72) Inventors
- Fumitsugu Fukuyo; Kenshi Fukumitsu; Naoki Uchiyama; Toshimitsu Wakuda
- (54) Title
- Laser processing method and laser processing apparatus
- (57) Abstract
A laser beam machining method and a laser beam machining device capable of cutting a work without producing a fusing and a cracking out of a predetermined cutting line on the surface of the work, wherein a pulse laser beam is radiated on the predetermined cutting line on the surface of the work to cause multiple photon absorption and with a condensed point located inside of the work, and a modified area is formed inside the work along the predetermined determined cutting line by moving the condensed point along the predetermined cut line, whereby the work is cut with a small force by cracking the work along the predetermined cutting line starting from the modified area and, because the pulse laser beam is hardly absorbed onto the surface.
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Claims (5)
- A method of cutting a substrate, the method comprising steps of: irradiating a substrate with pulsed laser light having a converging point positioned within the substrate; and performing the irradiating step at multiple locations along each of a plurality of intersecting cutting lines along which the substrate is to be cut in order to form a plurality of modified spots within the substrate at converging points of the pulsed laser light, respectively, without melting a pulsed laser light incident surface of the substrate, the modified spots being formed so that the modified spots overlap each other and make up a modified region formed only within the substrate which functions as a starting crack location for cutting the substrate along the lines along which the substrate is to be cut, wherein the starting crack location is formed in the substrate only by the laser irradiation, and a crack is grown from the starting crack location in a thickness direction of the substrate so that the crack grows towards a front and a back surface of the substrate and the substrate is thereby cut.
- The method according to claim 1, wherein the plurality of intersecting cutting lines include first lines and second lines, the second lines crossing the first lines, and after formation of the modified regions has been performed, the substrate is cut into at least one piece having a chip shape.
- The method according to claim 2, wherein the first lines are arranged in parallel to each other and the second lines are arranged in parallel to each other so that the first and second lines form a grid-like pattern.
- The method according to claim 1, wherein the modified spots comprise cracks.
- The method according to claim 1, wherein the modified spots comprise refractive index changing regions.
Description
1. Field of the Invention
The present invention relates to laser processing methods and laser processing apparatus used for cutting objects to be processed such as semiconductor material substrates, piezoelectric material substrates, and glass substrates.
2. Related Background Art
One of laser applications is cutting. A optical cutting process effected by laser is as follows: For embodiment, a part to be cut in an object to be processed such as a semiconductor wafer or glass substrate is irradiated with laser light having a wavelength absorbed by the object, so that melting upon heating proceeds due to the laser light absorption from the surface to rear face of the object to be processed at the part to be cut, whereby the object to be processed is cut. However, this method also melts surroundings of the region to become the cutting part in the surface of the object to be cut. Therefore, in the case where the object to be processed is a semiconductor wafer, semiconductor devices located near the above-mentioned region among those formed in the surface of the semiconductor wafer might melt. In the specification, “wafer shape” means a shape similar to a semiconductor wafer made of silicon of which thickness is about 100 μm, for example, a thin circular shape having a orientation flat therein.
Known as embodiments of methods which can prevent the surface of the object to be processed from melting are laser-based cutting methods disclosed in Japanese Patent Application Laid-Open No. 2000-219528 and Japanese Patent Application Laid-Open No. 2000-15467.
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Record as JSON
{
"publication_number": "US8946592B2",
"country": "US",
"kind": "B2",
"title": "Laser processing method and laser processing apparatus",
"abstract": "A laser beam machining method and a laser beam machining device capable of cutting a work without producing a fusing and a cracking out of a predetermined cutting line on the surface of the work, wherein a pulse laser beam is radiated on the predetermined cutting line on the surface of the work to cause multiple photon absorption and with a condensed point located inside of the work, and a modified area is formed inside the work along the predetermined determined cutting line by moving the condensed point along the predetermined cut line, whereby the work is cut with a small force by cracking the work along the predetermined cutting line starting from the modified area and, because the pulse laser beam is hardly absorbed onto the surface.",
"claims": [
"1. A method of cutting a substrate, the method comprising steps of: irradiating a substrate with pulsed laser light having a converging point positioned within the substrate; and performing the irradiating step at multiple locations along each of a plurality of intersecting cutting lines along which the substrate is to be cut in order to form a plurality of modified spots within the substrate at converging points of the pulsed laser light, respectively, without melting a pulsed laser light incident surface of the substrate, the modified spots being formed so that the modified spots overlap each other and make up a modified region formed only within the substrate which functions as a starting crack location for cutting the substrate along the lines along which the substrate is to be cut, wherein the starting crack location is formed in the substrate only by the laser irradiation, and a crack is grown from the starting crack location in a thickness direction of the substrate so that the crack grows towards a front and a back surface of the substrate and the substrate is thereby cut.",
"2. The method according to claim 1, wherein the plurality of intersecting cutting lines include first lines and second lines, the second lines crossing the first lines, and after formation of the modified regions has been performed, the substrate is cut into at least one piece having a chip shape.",
"3. The method according to claim 2, wherein the first lines are arranged in parallel to each other and the second lines are arranged in parallel to each other so that the first and second lines form a grid-like pattern.",
"4. The method according to claim 1, wherein the modified spots comprise cracks.",
"5. The method according to claim 1, wherein the modified spots comprise refractive index changing regions."
],
"description_excerpt": "1. Field of the Invention\n\nThe present invention relates to laser processing methods and laser processing apparatus used for cutting objects to be processed such as semiconductor material substrates, piezoelectric material substrates, and glass substrates.\n\n2. Related Background Art\n\nOne of laser applications is cutting. A optical cutting process effected by laser is as follows: For embodiment, a part to be cut in an object to be processed such as a semiconductor wafer or glass substrate is irradiated with laser light having a wavelength absorbed by the object, so that melting upon heating proceeds due to the laser light absorption from the surface to rear face of the object to be processed at the part to be cut, whereby the object to be processed is cut. However, this method also melts surroundings of the region to become the cutting part in the surface of the object to be cut. Therefore, in the case where the object to be processed is a semiconductor wafer, semiconductor devices located near the above-mentioned region among those formed in the surface of the semiconductor wafer might melt. In the specification, “wafer shape” means a shape similar to a semiconductor wafer made of silicon of which thickness is about 100 μm, for example, a thin circular shape having a orientation flat therein.\n\nKnown as embodiments of methods which can prevent the surface of the object to be processed from melting are laser-based cutting methods disclosed in Japanese Patent Application Laid-Open No. 2000-219528 and Japanese Patent Application Laid-Open No. 2000-15467.",
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"assignees": [
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"filing_date": "2012-03-28",
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}
Record 5,069 of 8,000 in Patents full text (MLC-0201). Request the full dataset.