Method of manufacturing a semiconductor device formed using a substrate cutting method

{
  "publication_number": "US8946591B2",
  "country": "US",
  "kind": "B2",
  "title": "Method of manufacturing a semiconductor device formed using a substrate cutting method",
  "abstract": "A laser beam machining method and a laser beam machining device capable of cutting a work without producing a fusing and a cracking out of a predetermined cutting line on the surface of the work, wherein a pulse laser beam is radiated on the predetermined cutting line on the surface of the work to cause multiple photon absorption and with a condensed point located inside of the work, and a modified area is formed inside the work along the predetermined determined cutting line by moving the condensed point along the predetermined cut line, whereby the work is cut with a small force by cracking the work along the predetermined cutting line starting from the modified area and, because the pulse laser beam is hardly absorbed onto the surface.",
  "claims": [
    "1. A method of manufacturing a semiconductor device comprising the steps of: irradiating a substrate with laser light comprising a pulsed laser light at a converging point within the substrate, so that the converging point of the pulsed laser light is positioned within the substrate to form a modified spot within the substrate at the converging point; and performing the irradiating step at multiple locations along each of a plurality of intersecting cutting lines along which the substrate is to be cut to form a plurality of non-overlapping modified spots within the substrate at converging points of the pulsed laser light, respectively, without melting a pulsed laser light incident surface of the substrate, the modified spots each having a modified region, the modified spots being formed intermittently and in alignment along each of the plurality of intersecting cutting lines, the modified spots are formed in the substrate only by the laser irradiation converging within the substrate; and cutting the substrate into parts along the plurality of intersecting cutting lines by growing cracks from the modified spots to grow towards a front and a back surface of the substrate, wherein the step of cutting the substrate into the parts along the plurality of intersecting cutting lines includes deforming a sheet supporting the substrate and applying stress to the substrate to cut and separate the substrate on the sheet into the parts, and the substrate is thereby cut in order to provide at least one manufactured semiconductor device.",
    "2. The method according to claim 1, wherein the plurality of intersecting cutting lines include first cutting lines and second cutting lines, the second cutting lines cross the first cutting lines, and after formation of the modified regions has been performed, the substrate is cut into at least one piece having a chip shape.",
    "3. The method according to claim 2, wherein the first lines are arranged in parallel to each other and the second lines are arranged in parallel to each other so that the first and second lines form a grid-like pattern.",
    "4. The method according to claim 1, wherein the modified spots comprise cracks.",
    "5. The method according to claim 1, wherein the modified spots comprise a refractive index changing region."
  ],
  "description_excerpt": "1. Field of the Invention\n\nThe present invention relates to laser processing methods and laser processing apparatus used for cutting objects to be processed such as semiconductor material substrates, piezoelectric material substrates, and glass substrates.\n\n2. Related Background Art\n\nOne of laser applications is cutting. A optical cutting process effected by laser is as follows: For embodiment, a part to be cut in an object to be processed such as a semiconductor wafer or glass substrate is irradiated with laser light having a wavelength absorbed by the object, so that melting upon heating proceeds due to the laser light absorption from the surface to rear face of the object to be processed at the part to be cut, whereby the object to be processed is cut. However, this method also melts surroundings of the region to become the cutting part in the surface of the object to be cut. Therefore, in the case where the object to be processed is a semiconductor wafer, semiconductor devices located near the above-mentioned region among those formed in the surface of the semiconductor wafer might melt. In the specification, “wafer shape” means a shape similar to a semiconductor wafer made of silicon of which thickness is about 100 μm, for example, a thin circular shape having a orientation flat therein.\n\nKnown as embodiments of methods which can prevent the surface of the object to be processed from melting are laser-based cutting methods disclosed in Japanese Patent Application Laid-Open No. 2000-219528 and Japanese Patent Application Laid-Open No. 2000-15467.",
  "cpc": [
    "H10P 54/00",
    "B23K 20/023",
    "B23K 20/16",
    "B23K 20/233",
    "B23K 20/26",
    "B23K 2101/40",
    "B23K 2103/50",
    "B23K 2201/40",
    "B23K 26/0057",
    "B23K 26/03",
    "B23K 26/032",
    "B23K 26/034",
    "B23K 26/04",
    "B23K 26/046",
    "B23K 26/0624",
    "B23K 26/0635",
    "B23K 26/0656",
    "B23K 26/066",
    "B23K 26/073",
    "B23K 26/08",
    "B23K 26/0853",
    "B23K 26/16",
    "B23K 26/36",
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    "B23K 26/38",
    "B23K 26/40",
    "B23K 26/4075",
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  "ipc": [
    "B23K 101/40",
    "B23K 26/00",
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    "B23K 26/04",
    "B23K 26/06",
    "B23K 26/073",
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    "H01L 21/301"
  ],
  "assignees": [
    "Hamamatsu Photonics KK"
  ],
  "inventors": [
    "Fumitsugu Fukuyo",
    "Kenshi Fukumitsu",
    "Naoki Uchiyama",
    "Toshimitsu Wakuda"
  ],
  "filing_date": "2012-03-23",
  "publication_date": "2015-02-03",
  "grant_date": "2015-02-03",
  "priority_date": "2000-09-13",
  "application_number": "US-201213428336-A",
  "family_id": "18763489",
  "cited_by_count": 3,
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