Manufacturing method of ESD protection device

{
  "publication_number": "US11328946B2",
  "country": "US",
  "kind": "B2",
  "title": "Manufacturing method of ESD protection device",
  "abstract": "A manufacturing method of the ESD protection device includes the following steps. A surface treatment is performed on the substrate. A link layer is formed on the substrate after the surface treatment, wherein a material of the link layer includes a metal material. A progressive layer is formed on the link layer, wherein a material of the progressive layer includes a non-stoichiometric metal oxide material, and an oxygen concentration in the non-stoichiometric metal oxide material is increased gradually away from the substrate in a thickness direction of the progressive layer. A composite layer is formed on the progressive layer, wherein the composite layer includes a stoichiometric metal oxide material and a non-stoichiometric metal oxide material, and a ratio of the non-stoichiometric metal oxide material and the stoichiometric metal oxide material in the composite layer may make a sheet resistance value of the composite layer 1×10 7 to 1×10 8 Ω/sq.",
  "claims": [
    "1. A manufacturing method of an ESD protection device comprising the following steps: A. performing a surface treatment on a substrate; B. forming a link layer on the substrate after the surface treatment, wherein a material of the link layer comprises a metal material; C. forming a progressive layer on the link layer, wherein a material of the progressive layer comprises a non-stoichiometric metal oxide material, and an oxygen concentration in the non-stoichiometric metal oxide material is increased gradually away from the substrate in a thickness direction of the progressive layer; and D. forming a composite layer on the progressive layer, wherein the composite layer comprises a stoichiometric metal oxide material and a non-stoichiometric metal oxide material, and a ratio of the non-stoichiometric metal oxide material and the stoichiometric metal oxide material in the composite layer may make a sheet resistance value of the composite layer 1×10 7 Ω/sq to 1×10 8 Ω/sq.",
    "2. The manufacturing method of the ESD protection device of claim 1, wherein a ratio of the non-stoichiometric metal oxide material and the stoichiometric metal oxide material in the composite layer is 0.005:1 to 0.01:1.",
    "3. The manufacturing method of the ESD protection device of claim 1, wherein: step A comprises performing the surface treatment on the substrate using a plasma; step B comprises providing a metal source and depositing a metal ion produced by the metal source on the substrate; step C comprises providing an oxygen as a reaction gas at the same time the metal ion is provided by the metal source to deposit the resulting non-stoichiometric metal oxide material on the link layer, wherein a supply of the oxygen is gradually increased with a process time; and step D comprises providing an oxygen as a reaction gas at the same time the metal ion is provided by the metal source to deposit the resulting stoichiometric metal oxide material and non-stoichiometric metal oxide material on the progressive layer, wherein a supply of the oxygen is configured such that the ratio of the non-stoichiometric metal oxide material and the stoichiometric metal oxide material in the resulting composite layer may make a sheet resistance of the composite layer 1×10 7 Ω/sq to 1×10 8 Ω/sq.",
    "4. The manufacturing method of the ESD protection device of claim 3, wherein step A to step D are performed using a same deposition equipment, and a same metal source is used in step B to step D.",
    "5. The manufacturing method of the ESD protection device of claim 3, wherein the plasma used in step A comprises an oxygen/argon plasma.",
    "6. The manufacturing method of the ESD protection device of claim 3, wherein the metal source comprises a metal target, and the metal target comprises a Ti target, an Al target, a Cu target, a Ni target, a Cr target, a Ta target, or a V target.",
    "7. The manufacturing method of the ESD protection device of claim 3, wherein step A to step D are performed using an arc ion plating apparatus, and the Ti target is used as the metal source in step B to step D."
  ],
  "description_excerpt": "The disclosure relates to a manufacturing method of ESD protection device.\n\nIn the current semiconductor industry, many related specifications and related materials of ESD protection have been developed. For instance, a conventional process and shipping process both have corresponding steps and materials, and even the humidity environment inside the factory is strictly regulated. However, in recent years, as electronic components have become smaller and more centralized, the circuit of the conductor equipment is more sophisticated, and spacing between wires is smaller, and therefore antistatic properties need to be improved.\n\nIn particular, in a high-temperature process, a carrier tray carrying a semiconductor device needs to tolerate a high-temperature environment (temperature resistance in prolonged use >300° C.). To meet the demand of tolerating a high-temperature environment above, the carrier tray in a high-temperature process is still based on a metal material, but since the equivalent resistance of the metal material is low, once electrostatic discharge damage occurs, the discharge current thereof is large and the discharge duration is very short, such that significant damage to the device occurs. Therefore, an ESD protection material needs to be formed on the metal carrier tray to avoid the issue of damage to the semiconductor device on the carrier tray by the generation of electrostatic discharge.",
  "cpc": [
    "H10P 72/1902",
    "B65G 47/74",
    "C23C 14/0021",
    "C23C 14/022",
    "C23C 14/024",
    "C23C 14/083",
    "C23C 14/14",
    "C23C 14/325",
    "H01L 21/67353",
    "H01L 21/67366",
    "H01L 21/67396",
    "H05F 3/04",
    "H10P 72/123",
    "H10P 72/135",
    "H10P 72/145",
    "H10P 72/155",
    "H10P 72/1911",
    "H10P 72/1928"
  ],
  "ipc": [
    "B65G 47/74",
    "C23C 14/00",
    "C23C 14/02",
    "C23C 14/08",
    "C23C 14/14",
    "C23C 14/32",
    "H01L 21/673",
    "H05F 3/04"
  ],
  "assignees": [
    "Industrial Technology Research Institute ITRI"
  ],
  "inventors": [
    "Ding-Shiang Wang",
    "Jia-Jen Chang",
    "Ming-Sheng Leu",
    "Tai-Sheng Chen",
    "Chin-Te Shih"
  ],
  "filing_date": "2021-05-24",
  "publication_date": "2022-05-10",
  "grant_date": "2022-05-10",
  "priority_date": "2018-05-25",
  "application_number": "US-202117327783-A",
  "family_id": "67348070",
  "cited_by_count": 0,
  "citations": [
    "US5955762A",
    "US6503627B1",
    "US7041365B2",
    "US20100157496A1"
  ]
}