Substrate processing apparatus, substrate supporter and method of manufacturing semiconductor device

{
  "publication_number": "US2014004710A1",
  "country": "US",
  "kind": "A1",
  "title": "Substrate processing apparatus, substrate supporter and method of manufacturing semiconductor device",
  "abstract": "A substrate processing apparatus of the present invention includes a substrate placement stage installed in the process chamber, and configured to place the substrate on a substrate placement surface, with a flange provided on its side face; a heating element arranged in the substrate placement stage and configured to heat the substrate; a plurality of struts configured to support the flange from below, and an exhaust unit configured to exhaust an atmosphere in the process chamber, wherein the supporting member is provided between the substrate placement stage and the plurality of struts.",
  "claims": [
    "1. A substrate processing apparatus, comprising: a process chamber configured to process a substrate: a gas supply unit configured to supply a processing gas into the process chamber; a substrate placement stage installed in the process chamber, and configured to place the substrate on a substrate placement surface, with a flange provided on its side face; a heating element arranged in the substrate placement stage and configured to heat the substrate; a plurality of struts configured to support the flange from below, and an exhaust unit configured to exhaust an atmosphere in the process chamber, wherein the supporting member is provided between the substrate placement stage and the plurality of struts. 2. The substrate processing apparatus according to claim 1, wherein the supporting member is made of a material having a lower thermal conductivity than that of the substrate placement stage. 3. The substrate processing apparatus according to claim 1, wherein the substrate placement stage is made of aluminum. 4. The substrate processing apparatus according to claim 1, wherein the substrate processing apparatus includes a substrate carrier provided in the process chamber and configured to transfer the substrates into the process chamber, and set in a standby mode in the process chamber while processing each substrate; a surface of the flange is formed to be lower than a height position of the substrate placement surface; one or a plurality of exhaust holes are formed outside of the substrate placement surface; a storage space of the substrate carrier is formed by a line connecting the exhaust hole and the upper end portion of the substrate placement stage, and an upper surface of the flange; and the substrate carrier is stored in the storage space while processing each substrate. 5. A substrate supporter, comprising: a substrate placement stage configured to place a substrate on a substrate placement surface, with a flange provided on its side face; a heating element arranged in the substrate placement stage, and configured to heat the substrate; and a plurality of struts configured to support the flange from below, wherein a supporting member is provided between the substrate placement stage and the plurality of struts. 6. A method of manufacturing a semiconductor device, comprising: loading a substrate into a process chamber; placing the substrate on a substrate placement surface of a substrate supporter including a substrate placement stage installed in the process chamber, with a flange provided on its side face and configured to place the substrate on the substrate placement surface, and a plurality of struts for supporting the flange from below, and a supporting member for supporting at least the flange between the substrate placement stage and the plurality of struts; processing the substrate by heating the substrate by the heating element while exhausting an inside of the process chamber by an exhaust unit, with the substrate placed on the substrate placement surface, and supplying a processing gas into the process chamber by a gas supply unit; and unloading the substrate after processing, from the process chamber. 7. The substrate processing apparatus according to claim 2, wherein the substrate placement stage is made of aluminum. 8. The substrate processing apparatus according to claim 2, wherein the substrate processing apparatus includes a substrate carrier provided in the process chamber and configured to transfer the substrates into the process chamber, and set in a standby mode in the process chamber while processing each substrate; a surface of the flange is formed to be lower than a height position of the substrate placement surface; one or a plurality of exhaust holes are formed outside of the substrate placement surface; a storage space of the substrate carrier is formed by a line connecting the exhaust hole and the upper end portion of the substrate placement stage, and an upper surface of the flange; and the substrate carrier is stored in the storage space while processing each substrate. 9. The substrate processing apparatus according to claim 3, wherein the substrate processing apparatus includes a substrate carrier provided in the process chamber and configured to transfer the substrates into the process chamber, and set in a standby mode in the process chamber while processing each substrate; a surface of the flange is formed to be lower than a height position of the substrate placement surface; one or a plurality of exhaust holes are formed outside of the substrate placement surface; a storage space of the substrate carrier is formed by a line connecting the exhaust hole and the upper end portion of the substrate placement stage, and an upper surface of the flange; and the substrate carrier is stored in the storage space while processing each substrate. 10. The substrate processing apparatus according to claim 7, wherein the substrate processing apparatus includes a substrate carrier provided in the process chamber and configured to transfer the substrates into the process chamber, and set in a standby mode in the process chamber while processing each substrate; a surface of the flange is formed to be lower than a height position of the substrate placement surface; one or a plurality of exhaust holes are formed outside of the substrate placement surface; a storage space of the substrate carrier is formed by a line connecting the exhaust hole and the upper end portion of the substrate placement stage, and an upper surface of the flange; and the substrate carrier is stored in the storage space while processing each substrate."
  ],
  "cpc": [
    "H10P 14/00",
    "H01L 21/02104",
    "H10P 72/0462",
    "H10P 72/3412",
    "H10P 72/7612",
    "H10P 72/7614",
    "H10P 95/00"
  ],
  "assignees": [
    "SAKATA MASAKAZU",
    "YANAI HIDEHIRO",
    "HITACHI INT ELECTRIC INC"
  ],
  "filing_date": "2012-01-16",
  "publication_date": "2014-01-02",
  "priority_date": "2011-01-18",
  "application_number": "US-201213980144-A",
  "family_id": "46515689",
  "citations": [
    "US2001025691A1",
    "US2003164226A1",
    "US2009258148A1",
    "US2010163403A1",
    "US2012329290A1",
    "US6120608A"
  ]
}