Patent · US12278133B2 · B2 · US
Substrate transferring unit, substrate processing apparatus, and substrate processing method
- (11) Publication number
- US12278133B2
- (21) Application number
- 18/545,644
- (22) Filing date
- 2023-12-19
- (30) Priority date
- 2021-08-31
- (43) Publication date
- 2025-04-15
- (45) Date of grant
- 2025-04-15
- (51) IPC
- G03F 7/20; G03F 7/40; H01L 21/687
- (52) CPC
- H10P Generic processes or apparatus for the manufacture or treatment of devices covered by class H10: 72/3302, 72/0408, 72/0432, 72/0434, 72/0448, 72/0456, 72/0474, 72/14, 72/3304, 72/3311, 72/3312, 72/3402, 72/7602
- B25J Manipulators; chambers provided with manipulation devices: 11/0095, 15/0052
- G03F Photomechanical production of textured or patterned surfaces, e.g. for printing, for processing of semiconductor devices; materials therefor; originals therefor; apparatus specially adapted therefor: 7/2004, 7/3021, 7/40
- H01L Semiconductor devices; electric solid state devices not otherwise provided for: 21/68707
- (73) Assignee
- Samsung Electronics Co Ltd
- (72) Inventors
- Sangjine Park; Kuntack Lee; Jihwan Park; Seungmin SHIN
- (54) Title
- Substrate transferring unit, substrate processing apparatus, and substrate processing method
- (57) Abstract
A substrate processing apparatus includes: a first process chamber in which a developing process is performed by supplying a developer to a substrate that is in a dry state; a second process chamber in which a drying process is performed on the substrate by supplying a supercritical fluid to the substrate on which the developing process is performed and which is in a wet state; a third process chamber in which a bake operation is performed on the substrate on which the drying operation is performed and is in a dry state; a fourth process chamber in which a cooling operation is performed on the substrate on which the bake operation is performed and is in a dry state; and a substrate transferring unit configured to transfer the substrate between the first to fourth process chambers.
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Claims (4)
- A substrate transferring unit comprising: a first blade configured to transfer a substrate that is in a dry state; a second blade provided below the first blade and configured to transfer the substrate that is in a wet state; a first cover provided above the first blade; a second cover provided between the first blade and the second blade; and a carrier configured to temporarily store the substrate that is in the dry state, wherein the carrier comprises: a cassette accommodating a plurality of substrates; and a purge nozzle through which gas is injected into the cassette.
- The substrate transferring unit of claim 1, further comprising: a first module configured to move in a horizontal direction to operate the first blade, the second blade, and the carrier, and wherein a second module configured to move in a vertical direction to operate the first blade and the second blade.
- The substrate transferring unit of claim 1, further comprising first blades and second blades, wherein a number of the second blades is greater than or equal to a number of the first blades.
- The substrate transferring unit of claim 1, wherein the carrier comprises a plurality of supports configured to accommodate the substrate in an exposed state.
Description
The present disclosure relates to a substrate transferring unit, a substrate processing apparatus, and a substrate processing method, and more particularly, to a substrate transferring unit, a substrate processing apparatus, and a substrate processing method, whereby particle defects on a substrate in a manufacturing process of a semiconductor device may be reduced.
As scaling of a semiconductor device is demanded, an extreme ultra-violet (EUV) lithography method using very small EUV wavelengths (about 13.5 nm) has been suggested. By using the EUV lithography, a photoresist pattern having a relatively small horizontal dimensions and a high aspect ratio may be formed. To prevent the collapse of photoresist patterns during a process of forming fine photoresist patterns, a technique of using a supercritical fluid is being researched. However, issues such as addressing particle defects on a substrate in a semiconductor device manufacturing process need to be further researched.
Example embodiments provide a substrate processing apparatus and a substrate processing method, in which an area taken by a substrate transferring unit is not relatively large and particle defects on a substrate in a semiconductor device manufacturing process may be significantly reduced.
The objectives to be solved are not limited to the above-mentioned objectives, and other objectives not mentioned herein will be clearly understood by those skilled in the art from the following description.
Citations (13)
- US6703316B2
- US7000621B1
- US20120064727A1
- US9449857B2
- US10507516B2
- US9831081B2
- US20190273002A1
- US10593571B2
- US10985036B2
- US11101157B2
- US20200219736A1
- KR102096954B1
- US20210008606A1
Record as JSON
{
"publication_number": "US12278133B2",
"country": "US",
"kind": "B2",
"title": "Substrate transferring unit, substrate processing apparatus, and substrate processing method",
"abstract": "A substrate processing apparatus includes: a first process chamber in which a developing process is performed by supplying a developer to a substrate that is in a dry state; a second process chamber in which a drying process is performed on the substrate by supplying a supercritical fluid to the substrate on which the developing process is performed and which is in a wet state; a third process chamber in which a bake operation is performed on the substrate on which the drying operation is performed and is in a dry state; a fourth process chamber in which a cooling operation is performed on the substrate on which the bake operation is performed and is in a dry state; and a substrate transferring unit configured to transfer the substrate between the first to fourth process chambers.",
"claims": [
"1. A substrate transferring unit comprising: a first blade configured to transfer a substrate that is in a dry state; a second blade provided below the first blade and configured to transfer the substrate that is in a wet state; a first cover provided above the first blade; a second cover provided between the first blade and the second blade; and a carrier configured to temporarily store the substrate that is in the dry state, wherein the carrier comprises: a cassette accommodating a plurality of substrates; and a purge nozzle through which gas is injected into the cassette.",
"2. The substrate transferring unit of claim 1, further comprising: a first module configured to move in a horizontal direction to operate the first blade, the second blade, and the carrier, and wherein a second module configured to move in a vertical direction to operate the first blade and the second blade.",
"3. The substrate transferring unit of claim 1, further comprising first blades and second blades, wherein a number of the second blades is greater than or equal to a number of the first blades.",
"4. The substrate transferring unit of claim 1, wherein the carrier comprises a plurality of supports configured to accommodate the substrate in an exposed state."
],
"description_excerpt": "The present disclosure relates to a substrate transferring unit, a substrate processing apparatus, and a substrate processing method, and more particularly, to a substrate transferring unit, a substrate processing apparatus, and a substrate processing method, whereby particle defects on a substrate in a manufacturing process of a semiconductor device may be reduced.\n\nAs scaling of a semiconductor device is demanded, an extreme ultra-violet (EUV) lithography method using very small EUV wavelengths (about 13.5 nm) has been suggested. By using the EUV lithography, a photoresist pattern having a relatively small horizontal dimensions and a high aspect ratio may be formed. To prevent the collapse of photoresist patterns during a process of forming fine photoresist patterns, a technique of using a supercritical fluid is being researched. However, issues such as addressing particle defects on a substrate in a semiconductor device manufacturing process need to be further researched.\n\nExample embodiments provide a substrate processing apparatus and a substrate processing method, in which an area taken by a substrate transferring unit is not relatively large and particle defects on a substrate in a semiconductor device manufacturing process may be significantly reduced.\n\nThe objectives to be solved are not limited to the above-mentioned objectives, and other objectives not mentioned herein will be clearly understood by those skilled in the art from the following description.",
"cpc": [
"H10P 72/3302",
"B25J 11/0095",
"B25J 15/0052",
"G03F 7/2004",
"G03F 7/3021",
"G03F 7/40",
"H01L 21/68707",
"H10P 72/0408",
"H10P 72/0432",
"H10P 72/0434",
"H10P 72/0448",
"H10P 72/0456",
"H10P 72/0474",
"H10P 72/14",
"H10P 72/3304",
"H10P 72/3311",
"H10P 72/3312",
"H10P 72/3402",
"H10P 72/7602"
],
"ipc": [
"G03F 7/20",
"G03F 7/40",
"H01L 21/687"
],
"assignees": [
"Samsung Electronics Co Ltd"
],
"inventors": [
"Sangjine Park",
"Kuntack Lee",
"Jihwan Park",
"Seungmin SHIN"
],
"filing_date": "2023-12-19",
"publication_date": "2025-04-15",
"grant_date": "2025-04-15",
"priority_date": "2021-08-31",
"application_number": "US-202318545644-A",
"family_id": "85288616",
"cited_by_count": 0,
"citations": [
"US6703316B2",
"US7000621B1",
"US20120064727A1",
"US9449857B2",
"US10507516B2",
"US9831081B2",
"US20190273002A1",
"US10593571B2",
"US10985036B2",
"US11101157B2",
"US20200219736A1",
"KR102096954B1",
"US20210008606A1"
]
}
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