MLchartDataset catalogue

Patent · US12278133B2 · B2 · US

Substrate transferring unit, substrate processing apparatus, and substrate processing method

(11) Publication number
US12278133B2
(21) Application number
18/545,644
(22) Filing date
2023-12-19
(30) Priority date
2021-08-31
(43) Publication date
2025-04-15
(45) Date of grant
2025-04-15
(51) IPC
G03F 7/20; G03F 7/40; H01L 21/687
(52) CPC
  • H10P Generic processes or apparatus for the manufacture or treatment of devices covered by class H10: 72/3302, 72/0408, 72/0432, 72/0434, 72/0448, 72/0456, 72/0474, 72/14, 72/3304, 72/3311, 72/3312, 72/3402, 72/7602
  • B25J Manipulators; chambers provided with manipulation devices: 11/0095, 15/0052
  • G03F Photomechanical production of textured or patterned surfaces, e.g. for printing, for processing of semiconductor devices; materials therefor; originals therefor; apparatus specially adapted therefor: 7/2004, 7/3021, 7/40
  • H01L Semiconductor devices; electric solid state devices not otherwise provided for: 21/68707
(73) Assignee
Samsung Electronics Co Ltd
(72) Inventors
Sangjine Park; Kuntack Lee; Jihwan Park; Seungmin SHIN
(54) Title
Substrate transferring unit, substrate processing apparatus, and substrate processing method
(57) Abstract

A substrate processing apparatus includes: a first process chamber in which a developing process is performed by supplying a developer to a substrate that is in a dry state; a second process chamber in which a drying process is performed on the substrate by supplying a supercritical fluid to the substrate on which the developing process is performed and which is in a wet state; a third process chamber in which a bake operation is performed on the substrate on which the drying operation is performed and is in a dry state; a fourth process chamber in which a cooling operation is performed on the substrate on which the bake operation is performed and is in a dry state; and a substrate transferring unit configured to transfer the substrate between the first to fourth process chambers.

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Claims (4)

  1. A substrate transferring unit comprising: a first blade configured to transfer a substrate that is in a dry state; a second blade provided below the first blade and configured to transfer the substrate that is in a wet state; a first cover provided above the first blade; a second cover provided between the first blade and the second blade; and a carrier configured to temporarily store the substrate that is in the dry state, wherein the carrier comprises: a cassette accommodating a plurality of substrates; and a purge nozzle through which gas is injected into the cassette.
  2. The substrate transferring unit of claim 1, further comprising: a first module configured to move in a horizontal direction to operate the first blade, the second blade, and the carrier, and wherein a second module configured to move in a vertical direction to operate the first blade and the second blade.
  3. The substrate transferring unit of claim 1, further comprising first blades and second blades, wherein a number of the second blades is greater than or equal to a number of the first blades.
  4. The substrate transferring unit of claim 1, wherein the carrier comprises a plurality of supports configured to accommodate the substrate in an exposed state.

Description

The present disclosure relates to a substrate transferring unit, a substrate processing apparatus, and a substrate processing method, and more particularly, to a substrate transferring unit, a substrate processing apparatus, and a substrate processing method, whereby particle defects on a substrate in a manufacturing process of a semiconductor device may be reduced.

As scaling of a semiconductor device is demanded, an extreme ultra-violet (EUV) lithography method using very small EUV wavelengths (about 13.5 nm) has been suggested. By using the EUV lithography, a photoresist pattern having a relatively small horizontal dimensions and a high aspect ratio may be formed. To prevent the collapse of photoresist patterns during a process of forming fine photoresist patterns, a technique of using a supercritical fluid is being researched. However, issues such as addressing particle defects on a substrate in a semiconductor device manufacturing process need to be further researched.

Example embodiments provide a substrate processing apparatus and a substrate processing method, in which an area taken by a substrate transferring unit is not relatively large and particle defects on a substrate in a semiconductor device manufacturing process may be significantly reduced.

The objectives to be solved are not limited to the above-mentioned objectives, and other objectives not mentioned herein will be clearly understood by those skilled in the art from the following description.

Citations (13)

  • US6703316B2
  • US7000621B1
  • US20120064727A1
  • US9449857B2
  • US10507516B2
  • US9831081B2
  • US20190273002A1
  • US10593571B2
  • US10985036B2
  • US11101157B2
  • US20200219736A1
  • KR102096954B1
  • US20210008606A1
Record as JSON
{
  "publication_number": "US12278133B2",
  "country": "US",
  "kind": "B2",
  "title": "Substrate transferring unit, substrate processing apparatus, and substrate processing method",
  "abstract": "A substrate processing apparatus includes: a first process chamber in which a developing process is performed by supplying a developer to a substrate that is in a dry state; a second process chamber in which a drying process is performed on the substrate by supplying a supercritical fluid to the substrate on which the developing process is performed and which is in a wet state; a third process chamber in which a bake operation is performed on the substrate on which the drying operation is performed and is in a dry state; a fourth process chamber in which a cooling operation is performed on the substrate on which the bake operation is performed and is in a dry state; and a substrate transferring unit configured to transfer the substrate between the first to fourth process chambers.",
  "claims": [
    "1. A substrate transferring unit comprising: a first blade configured to transfer a substrate that is in a dry state; a second blade provided below the first blade and configured to transfer the substrate that is in a wet state; a first cover provided above the first blade; a second cover provided between the first blade and the second blade; and a carrier configured to temporarily store the substrate that is in the dry state, wherein the carrier comprises: a cassette accommodating a plurality of substrates; and a purge nozzle through which gas is injected into the cassette.",
    "2. The substrate transferring unit of claim 1, further comprising: a first module configured to move in a horizontal direction to operate the first blade, the second blade, and the carrier, and wherein a second module configured to move in a vertical direction to operate the first blade and the second blade.",
    "3. The substrate transferring unit of claim 1, further comprising first blades and second blades, wherein a number of the second blades is greater than or equal to a number of the first blades.",
    "4. The substrate transferring unit of claim 1, wherein the carrier comprises a plurality of supports configured to accommodate the substrate in an exposed state."
  ],
  "description_excerpt": "The present disclosure relates to a substrate transferring unit, a substrate processing apparatus, and a substrate processing method, and more particularly, to a substrate transferring unit, a substrate processing apparatus, and a substrate processing method, whereby particle defects on a substrate in a manufacturing process of a semiconductor device may be reduced.\n\nAs scaling of a semiconductor device is demanded, an extreme ultra-violet (EUV) lithography method using very small EUV wavelengths (about 13.5 nm) has been suggested. By using the EUV lithography, a photoresist pattern having a relatively small horizontal dimensions and a high aspect ratio may be formed. To prevent the collapse of photoresist patterns during a process of forming fine photoresist patterns, a technique of using a supercritical fluid is being researched. However, issues such as addressing particle defects on a substrate in a semiconductor device manufacturing process need to be further researched.\n\nExample embodiments provide a substrate processing apparatus and a substrate processing method, in which an area taken by a substrate transferring unit is not relatively large and particle defects on a substrate in a semiconductor device manufacturing process may be significantly reduced.\n\nThe objectives to be solved are not limited to the above-mentioned objectives, and other objectives not mentioned herein will be clearly understood by those skilled in the art from the following description.",
  "cpc": [
    "H10P 72/3302",
    "B25J 11/0095",
    "B25J 15/0052",
    "G03F 7/2004",
    "G03F 7/3021",
    "G03F 7/40",
    "H01L 21/68707",
    "H10P 72/0408",
    "H10P 72/0432",
    "H10P 72/0434",
    "H10P 72/0448",
    "H10P 72/0456",
    "H10P 72/0474",
    "H10P 72/14",
    "H10P 72/3304",
    "H10P 72/3311",
    "H10P 72/3312",
    "H10P 72/3402",
    "H10P 72/7602"
  ],
  "ipc": [
    "G03F 7/20",
    "G03F 7/40",
    "H01L 21/687"
  ],
  "assignees": [
    "Samsung Electronics Co Ltd"
  ],
  "inventors": [
    "Sangjine Park",
    "Kuntack Lee",
    "Jihwan Park",
    "Seungmin SHIN"
  ],
  "filing_date": "2023-12-19",
  "publication_date": "2025-04-15",
  "grant_date": "2025-04-15",
  "priority_date": "2021-08-31",
  "application_number": "US-202318545644-A",
  "family_id": "85288616",
  "cited_by_count": 0,
  "citations": [
    "US6703316B2",
    "US7000621B1",
    "US20120064727A1",
    "US9449857B2",
    "US10507516B2",
    "US9831081B2",
    "US20190273002A1",
    "US10593571B2",
    "US10985036B2",
    "US11101157B2",
    "US20200219736A1",
    "KR102096954B1",
    "US20210008606A1"
  ]
}

Record 215 of 8,000 in Patents full text (MLC-0201). Request the full dataset.