Fabrication process of a semiconductor device including a dicing process of a semiconductor wafer

{
  "publication_number": "US5981361A",
  "country": "US",
  "kind": "A",
  "title": "Fabrication process of a semiconductor device including a dicing process of a semiconductor wafer",
  "abstract": "A method of fabricating a semiconductor device includes the steps of, after sawing a semiconductor substrate into individual semiconductor chips in a state that the semiconductor substrate is covered by an adhesive tape, applying a dry gas to the adhesive tape in a state that the adhesive tape carries thereon the semiconductor chips, applying an infrared radiation to the adhesive tape in a state that the adhesive tape carries thereon the semiconductor chips, and curing the adhesive layer on the adhesive tape in a state that the adhesive tape carries thereon the semiconductor chips, by irradiating a ultraviolet radiation to the adhesive tape, wherein the step of applying the dry gas, the step of applying the infrared radiation and the said step of curing the adhesive layer are conducted substantially simultaneously.",
  "claims": [
    "1. A method of fabricating a semiconductor device, comprising the steps of: covering a surface of a semiconductor substrate by an adhesive tape carrying thereon a ultraviolet-curing type adhesive layer; sawing said semiconductor substrate into individual semiconductor chips in a state that said semiconductor substrate is covered by said adhesive tape; applying a dry gas to said adhesive tape in a state that said adhesive tape carries thereon said semiconductor chips; applying an infrared radiation to said adhesive tape in a state that said adhesive tape carries thereon said semiconductor chips; and curing said adhesive layer on said adhesive tape in a state that said adhesive tape carries thereon said semiconductor chips, by irradiating a ultraviolet radiation to said adhesive tape; said step of applying said dry gas, said step of applying said infrared radiation and said step of curing said adhesive layer being conducted substantially simultaneously.",
    "2. A method as claimed in claim 1, further including a step, after said sawing step but before said drying step, of cleaning said semiconductor substrate by a cleaning liquid.",
    "3. A method as claimed in claim 1, wherein said step of applying infrared radiation is conducted such that said infrared radiation is applied to a side of said adhesive tape opposite to the side carrying thereon said semiconductor wafer.",
    "4. A method as claimed in claim 1, wherein said step of drying is conducted by applying said dry gas to a side of said adhesive tape carrying said semiconductor wafer.",
    "5. A method as claimed in claim 1, wherein said step of curing is conducted by applying an ultraviolet radiation to a side of said adhesive tape opposite to the side carrying thereon said semiconductor wafer.",
    "6. A method as claimed in claim 1, wherein said step of sawing is conducted such that a dicing groove formed in said semiconductor wafer as a result of said sawing has a depth equal to a thickness of said semiconductor wafer.",
    "7. A method as claimed in claim 1, wherein said step of curing is conducted such that a temperature of said adhesive tape rises to a range between about 90° C. and about 140° C.",
    "8. A method as claimed in claim 1, further including a step, after said step of curing, of detaching said adhesive tape from said semiconductor chips.",
    "9. A method of fabricating a semiconductor device, comprising the steps of: covering a surface of a semiconductor substrate by an adhesive tape carrying thereon a ultraviolet-curing type adhesive layer; holding said semiconductor substrate on an opening of a lamp house including therein an ultraviolet radiation source, in a state that said semiconductor substrate is covered by said adhesive tape; and sawing said semiconductor substrate into individual semiconductor chips in a state that said semiconductor substrate is held on said opening of said lamp house.",
    "10. A method as claimed in claim 9, wherein said step of holding said semiconductor substrate includes the steps of placing said semiconductor substrate on a vacuum chuck substantially transparent to ultraviolet radiation, in a state that said semiconductor substrate is covered by said adhesive tape, and urging said semiconductor substrate upon said vacuum chuck by evacuating said lamp house.",
    "11. A method as claimed in claim 9, further including a step, after said sawing step, of curing said adhesive tape in a state that said adhesive tape, carrying thereon said semiconductor chips, is held on said opening of said lamp house, said curing step including a step of energizing said ultraviolet radiation source."
  ],
  "description_excerpt": "The present invention generally relates to fabrication of semiconductor devices and more particularly to a fabrication process of a semiconductor device including a dicing process of a semiconductor wafer and an apparatus therefor.\n\nIn a fabrication process of semiconductor devices, a very large number of semiconductor devices are formed commonly on a single semiconductor wafer. The semiconductor wafer thus formed with the semiconductor devices are then divided into individual semiconductor chips by a dicing process that includes a sawing process conducted by a dicing saw.\n\nIn a such dicing process, it is commonly practiced to protect the semiconductor wafer, on which semiconductor devices are already formed, by an adhesive tape, such that the semiconductor devices are not damaged by the sawing process achieved by a dicing saw. The sawing may be conducted such that the depth of the dicing grooves, formed as a result of the action of the dicing saw, exceeds the thickness of the semiconductor wafer (full-cut dicing), or alternatively such that the depth of the dicing grooves is smaller than the wafer thickness (semi-full-cut dicing). Further, it is practiced to use an adhesive tape carrying a UV (ultraviolet)-cure type adhesive layer on a tape base for the foregoing adhesive tape, for facilitating the removal of the tape after the semiconductor wafer is divided into individual semiconductor chips. The tape base is typically formed of a polyvinyl chloride resin or a polyolefin resin.",
  "cpc": [
    "H10P 72/74",
    "H10P 54/00",
    "H10P 72/7402",
    "H10P 72/7416",
    "H10P 72/7428",
    "Y10S 438/977",
    "Y10T 29/5102",
    "Y10T 29/5193"
  ],
  "ipc": [
    "H10P 95/00"
  ],
  "assignees": [
    "Fujitsu Ltd"
  ],
  "inventors": [
    "Yutaka Yamada"
  ],
  "filing_date": "1997-09-11",
  "publication_date": "1999-11-09",
  "grant_date": "1999-11-09",
  "priority_date": "1996-09-13",
  "application_number": "US-92720997-A",
  "family_id": "17107484",
  "cited_by_count": 52,
  "citations": [
    "US5238876A",
    "US5534102A",
    "US5578133A",
    "US5622900A",
    "US5759874A",
    "US5641714A",
    "US5733814A"
  ]
}