Precursors for depositing silicon containing films and processes thereof

{
  "publication_number": "US7122222B2",
  "country": "US",
  "kind": "B2",
  "title": "Precursors for depositing silicon containing films and processes thereof",
  "abstract": "Processes for precursors for silicon dielectric depositions of silicon nitride, silicon oxide and silicon oxynitride on a substrate using a hydrazinosilane of the formula: [R 1 2 N - NH] n Si(R 2) 4−n where each R 1 is independently selected from alkyl groups of C 1 to C 6; each R 2 is independently selected from the group consisting of hydrogen, alkyl, vinyl, allyl, and phenyl; and n=1-4. Some of the hydrazinosilanes are novel precursors.",
  "claims": [
    "1. A process for the chemical vapor deposition of material selected from the group consisting of silicon nitride, silicon oxide, and silicon oxynitride on a substrate using a hydrazinosilane of the formula: [R 1 2 N - NH] n Si(R 2) 4−n where each R 1 is independently selected from alkyl groups of C 1 to C 6; each R 2 is independently selected from the group consisting of hydrogen, alkyl, vinyl, allyl, and phenyl; and n=1-4.",
    "2. The process of claim 1 wherein the hydrazinosilane is selected from the group consisting of: Bis(1,1-dimethylhydrazino)methylsilane, Tris(1,1-dimethylhydrazino)silane, Tris(1,1-dimethylhydrazino)-t-butylsilane, Tris(1,1-dimethylhydrazino)s-butylsilane, Tris(1,1-dimethylhydrazino)ethylsilane, Bis(1,1-dimethylhydrazino)ethylsilane, Bis(1,1-dimethylhydrazino)Iso-propylsilane, Bis(1,1-dimethylhydrazino)allylsilane, Bis(1,1-dimethylhydrazino)silane, Tetrakis(1,1-dimethylhydrazino)silane, N,N′,N″-Tris(dimethylamino)cyclotrisilazane, N,N′,N″,N′″-Tetrakis(dimethylamino)cyclotrisilazane, Tris(1,1-dimethylhydrazino)Iso-propylsilane, Tris(1,1-dimethylhydrazino)allylsilane and mixtures thereof.",
    "3. The process of claim 1 wherein the temperature of the substrate is in the range of approximately 100 to 800° C.",
    "4. The process of claim 1 wherein the pressure is in the range of approximately 10 −5 Torr to 760 Torr.",
    "5. The process of claim 1 wherein the hydrazinosilane is reacted with a nitrogen source selected from the group consisting of nitrogen, ammonia, hydrazine, amines, and mixtures thereof.",
    "6. The process of claim 5 wherein the molar ratio of ammonia to hydrazinosilane can be greater than or equal to zero.",
    "7. The process of claim 1 wherein the substrate is silicon.",
    "8. The process of claim 1 wherein the substrate is an electronic device.",
    "9. The process of claim 1 wherein the substrate is a flat panel display.",
    "10. The process of claim 1 wherein each R 1 is independently selected from the group consisting of methyl and ethyl and each R 2 is independently selected from the group consisting of hydrogen, methyl, ethyl, propyl, iso-propyl, n-butyl, iso-butyl, tert-butyl, allyl and phenyl.",
    "11. The process of claim 1 wherein the material is silicon nitride.",
    "12. The process of claim 1 wherein the material is silicon oxynitride.",
    "13. The process of claim 1 wherein the material is silicon nitride and the chemical vapor deposition is plasma enhanced chemical vapor deposition.",
    "14. The process of claim 1 wherein the material is silicon oxide and the chemical vapor deposition is plasma enhanced chemical vapor deposition.",
    "15. The process of claim 1 wherein the material is silicon oxynitride and the chemical vapor deposition is plasma enhanced chemical vapor deposition.",
    "16. The process of claim 1 wherein the chemical vapor deposition is atomic layer deposition.",
    "17. A low temperature chemical vapor deposition of silicon nitride in a reaction zone, comprising the steps of: a) heating a substrate to a temperature in the range of approximately 100-800° C. in said zone; b) maintaining the substrate in a vacuum at a pressure in the range of approximately 10 −5 Torr-760 Torr in said zone; c) introducing into said zone a hydrazinosilane of the formula: [R 1 2 N - NH] n Si(R 2) 4−n where each R 1 is independently selected from alkyl groups of C 1 to C 6; each R 2 is independently selected from the group consisting of hydrogen, alkyl, allyl, and phenyl; and n=1-4; and d) maintaining the conditions of a) through c) sufficient to cause a film of silicon nitride to deposit on the substrate.",
    "18. The process of claim 17 wherein the hydrazinosilane is selected from the group consisting of: Bis(1,1-dimethylhydrazino)methylsilane, Tris(1,1-dimethylhydrazino)silane, Tris(1,1-dimethylhydrazino)-t-butylsilane, Tris(1,1-dimethylhydrazino)s-butylsilane, Tris(1,1-dimethylhydrazino)ethylsilane, Bis(1,1-dimethylhydrazino)ethylsilane, Bis(1,1-dimethylhydrazino)Iso-propylsilane, Bis(1,1-dimethylhydrazino)allylsilane, Bis(1,1-dimethylhydrazino)silane, Tetrakis(1,1-dimethylhydrazino)silane, N,N′,N″-Tris(dimethylamino)cyclotrisilazane, N,N′,N″,N′″-Tetrakis(dimethylamino)cyclotrisilazane, Tris(1,1-dimethylhydrazino)Iso-propylsilane, Tris(1,1-dimethylhydrazino)allylsilane and mixtures thereof.",
    "19. The process of claim 17 wherein the hydrazinosilane is reacted with nitrogen source selected from the group consisting of nitrogen, ammonia hydrazine and mixtures thereof."
  ],
  "cpc": [
    "H10P 14/6687",
    "C07F 7/10",
    "C23C 16/308",
    "C23C 16/345",
    "C23C 16/46",
    "C23C 16/52",
    "H10P 14/60",
    "H10P 14/6326",
    "H10P 14/6334",
    "H10P 14/6336",
    "H10P 14/6339",
    "H10P 14/6682",
    "H10P 14/6689",
    "H10P 14/69215",
    "H10P 14/6927",
    "H10P 14/69433"
  ],
  "assignees": [
    "AIR PROD & CHEM"
  ],
  "filing_date": "2003-10-27",
  "publication_date": "2006-10-17",
  "grant_date": "2006-10-17",
  "priority_date": "2003-01-23",
  "application_number": "US-69537903-A",
  "family_id": "32600303",
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}