Short inorganic trisilylamine-based polysilazanes for thin film deposition

{
  "publication_number": "US10192734B2",
  "country": "US",
  "kind": "B2",
  "title": "Short inorganic trisilylamine-based polysilazanes for thin film deposition",
  "abstract": "Si-containing film forming compositions comprising Si - C free and volatile silazane-containing precursors are disclosed. The compositions may be used to deposit high purity thin films. The Si - C free and volatile silazane-containing precursors have the formulae: [(SiR 3) 2 NSiH 2] m - NH 2-m - C≡N, with m =1 or 2; (a) [(SiR 3) 2 NSiH 2] n - NL 3-n,with n =2 or 3; (b) (SiH 3) 2 NSiH 2 - O - SiH 2 N(SiH 3) 2; and (c) (SiR′ 3) 2 N - SiH 2 - N(SiR′ 3) 2; (d) with each R independently selected from H, a dialkylamino group, or an amidinate; each R′ independently selected from H, a dialkylamino group, or an amidinate, with the provision that all R′ are not H; and L is selected from H or a C 1 -C 6 hydrocarbyl group.",
  "claims": [
    "1. A silicon-containing film forming composition comprising a precursor selected from the group consisting of: [(SiR 3) 2 NSiH 2] m - NH 2-m - C≡N, with m= 1 or 2; (a) [(SiR 3) 2 NSiH 2] n - NL 3-n,with n= 2 or 3; (b) (SiH 3) 2 NSiH 2 - O - SiH 2 N(SiH 3) 2; and (c) (SiR′ 3) 2 N - SiH 2 - N(SiR′ 3) 2; (d) wherein each R is independently selected from H, a dialkylamino group having the formula NR 1 R 2, or an amidinate, Each R′ is independently selected from H, a dialkylamino group having the formula NR 1 R 2, or an amidinate, with the provision that all R′ are not H, R 1 and R 2 are independently selected from H or a C1-C12 hydrocarbyl group, with the provision that R 1 and R 2 cannot be simultaneously equal to H, and that if R 1 is H, then R 2 is a C 2 -C12 hydrocarbyl group, and NR′ R 2 may together form an N-containing heterocyclic ligand, and L is selected from H or a C 1 -C 6 hydrocarbyl group.",
    "2. The silicon-containing film forming composition of claim 1, wherein the precursor is (SiH 3) 2 N - SiH 2 - N(SiH 3)(SiH 2 NR 1 R 2), (SiH 3) 2 NSiH 2 - O - SiH 2 N(SiH 3) 2, [(SiH 3) 2 NSiH 2] - NH - C≡N, or [(SiH 3) 2 NSiH 2] 2 N - C≡N.",
    "3. The silicon-containing film forming composition of claim 1, wherein the precursor is [(SiH 3) 2 NSiH 2] 2 NH or [(SiH 3) 2 NSiH 2] 3 N.",
    "4. The silicon-containing film forming composition of claim 1, wherein the precursor is (SiH 3) 2 N - SiH 2 - N(SiH 3)(SiH 2 NMe 2), (SiH 3) 2 N - SiH 2 - N(SiH 3)(SiH 2 NEt 2), (SiH 3) 2 N - SiH 2 - N(SiH 3)(SiH 2 NEtMe), (SiH 3) 2 N - SiH 2 - N(SiH 3)(SiH 2 NiPr 2), (SiH 3) 2 N - SiH 2 - N(SiH 3)(SiH 2 NtBu 2), (SiH 3) 2 N - SiH 2 - N(SiH 3)(SiH 2 NnBu 2), (SiH 3) 2 N - SiH 2 - N(SiH 3)(SiH 2 NsecBu 2), or (SiH 3) 2 N - SiH 2 - N(SiH 3)(SiH 2 NHtBu).",
    "5. A method of deposit a silicon-containing film on a substrate by a chemical vapor deposition method, the method comprising introducing into a reactor containing a substrate a vapor including the Si-containing film forming composition of claim 1; depositing at least part of the precursor onto the substrate to form the silicon-containing film on the substrate using a chemical vapor deposition process.",
    "6. The method of claim 5, wherein the chemical vapor deposition method is an atomic layer deposition process or a plasma enhanced atomic layer deposition process.",
    "7. The method of claim 5, wherein the silicon-containing film is a silicon oxide film.",
    "8. The method of claim 5, wherein the silicon-containing film is a silicon nitride film.",
    "9. The method of claim 5, wherein the substrate is a silicon wafer.",
    "10. The method of claim 5, wherein the substrate is glass.",
    "11. The method of claim 5, wherein the substrate is an organic material."
  ],
  "cpc": [
    "H10P 14/6682",
    "C07F 7/10",
    "C23C 16/345",
    "C23C 16/402",
    "C23C 16/45553",
    "H01L 21/02164",
    "H01L 21/0217",
    "H01L 21/02211",
    "H01L 21/02222",
    "H01L 21/02274",
    "H01L 21/0228",
    "H10P 14/6336",
    "H10P 14/6339",
    "H10P 14/6689",
    "H10P 14/69215",
    "H10P 14/69433"
  ],
  "assignees": [
    "AIR LIQUIDE ADVANCED MAT INC",
    "LAIR LIQUIDE SA POUR L ETUDE ET LEXPLOITATION DES PROCEDES GEORGES CLAUDE",
    "AIR LIQUIDE ADVANCED MAT LLC",
    "LAIR LIQUIDE SA POUR LETUDE ET LEXPLORATION DES PROCEDES GEORGES CLAUDE"
  ],
  "filing_date": "2017-07-27",
  "publication_date": "2019-01-29",
  "grant_date": "2019-01-29",
  "priority_date": "2016-12-11",
  "application_number": "US-201715661576-A",
  "family_id": "60243685",
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