Method for forming HSG silicon film of semiconductor device

{
  "publication_number": "US6043132A",
  "country": "US",
  "kind": "A",
  "title": "Method for forming HSG silicon film of semiconductor device",
  "abstract": "Methods of forming a uniform HSG silicon film on a conductive layer pattern use C x F y and HF to remove the polymer by-products resulted etching, ashing and stripping steps. This effective removal promotes the formation of uniform HSG silicon film the conductive layer pattern. Accordingly, when the conductive layer pattern is used as the storage node of a capacitor, the capacitance of the capacitor increases, and the difference in the capacitance between capacitors minimizes, resulting in stabilized operation characteristics of the semiconductor device.",
  "claims": [
    "1. A method of forming an HSG silicon film of a semiconductor device, comprising: (a) forming a conductive layer on a semiconductor substrate; (b) forming a patterned photosensitive layer on the conductive layer; (c) etching the conductive layer to form a patterned conductive layer using the patterned photosensitive layer as an etching mask and using a source gas including C x F y; (d) ashing and stripping the patterned photosensitive layer using a gas including C x F y; and (e) forming an HSG silicon film on the entire surface of the patterned conductive layer.",
    "2. The method of claim 1, wherein C x F y is CF 4, C 2 F 6, or C 4 F 8.",
    "3. The method of claim 1, wherein a surface treatment of the patterned photosensitive layer and the patterned conductive layer is performed using a gas in which C x F y and O 2 are mixed at a ratio of 1:5 before ashing and stripping the patterned photosensitive layer.",
    "4. The method of claim 1, wherein, after ashing the patterned photosensitive layer in the step (d), the patterned conductive layer is processed using C x F y.",
    "5. The method of claim 1, wherein, after ashing the patterned photosensitive layer, a gas in which C x F y and O 2 are mixed in a ratio of 1:5 ratio is used for surface-treatment of the patterned conductive layer.",
    "6. The method of claim 1, wherein, after ashing and stripping the patterned photosensitive layer, the patterned conductive layer is wet processed by C x F y and the temperature of the semiconductor substrate is maintained at a temperature of 200° C. or higher.",
    "7. The method of claim 1, wherein, after ashing and stripping the patterned photosensitive layer, the patterned conductive layer is processed using HF and the temperature of the semiconductor substrate is maintained at a temperature of 200° C. or higher.",
    "8. A method of forming an HSG film of a semiconductor device, comprising: (a) sequentially forming a first insulating film and a conductive layer on a semiconductor substrate; (b) forming a photosensitive layer pattern on the conductive layer; (c) patterning the conductive layer to form a patterned conductive layer using the photosensitive layer pattern as an etching mask and using a source gas; (d) processing the surface of the patterned conductive layer using C x F y; (e) ashing and stripping the photosensitive layer pattern and processing the patterned conductive layer using an HF gas; and (f) forming an HSG silicon film on the patterned conductive layer.",
    "9. The method of claim 8, wherein in step (d), C x F y is used as a gas in which C x F y and O 2 are mixed in a ratio of 1:5, and the semiconductor substrate is maintained at a temperature of 200° C. or higher.",
    "10. The method of claim 8, wherein C x F y is CF 4, C 2 F 6, or C 4 F 8.",
    "11. The method of claim 8, wherein, after ashing the patterned photosensitive layer in the step (f), the patterned conductive layer is processed using a gas in which C x F y and O 2 are mixed in a ratio of 1:5 before stripping the patterned photosensitive layer and the semiconductor substrate is maintained at a temperature of 200° C. or higher.",
    "12. A method of forming an HSG film of a semiconductor device, comprising: (a) sequentially forming a first insulating film and a conductive layer on a semiconductor substrate; (b) forming a photosensitive layer pattern on the conductive layer; (c) patterning the conductive layer to form a patterned conductive layer using the photosensitive layer pattern as an etching mask and using a source gas; (d) baking the semiconductor substrate; (e) ashing and stripping the photosensitive layer pattern and processing the patterned conductive layer using an HF gas; and (f) forming an HSG silicon film on the patterned conductive layer.",
    "13. A method in claim 12, wherein in step (d), the baking temperature is 200° C.",
    "14. A method of forming an HSG silicon film, comprising: (a) sequentially forming a first insulating film and a conductive layer on a semiconductor substrate; (b) forming a patterned photosensitive layer on the conductive layer; (c) patterning the conductive layer to form a patterned conductive layer using the patterned photosensitive layer as an etching mask; (d) processing the patterned conductive layer and the patterned photosensitive layer using HF; (e) ashing and stripping the patterned photosensitive layer; (f) processing the patterned conductive pattern using HF; and (g) forming an HSG silicon film on the patterned conductive layer.",
    "15. The method of claim 14, wherein C x F y is used in the step (e) with the temperature of the semiconductor substrate being maintained at a temperature of about 200° C.",
    "16. The method of claim 15, wherein C x F y is CF 4, C 2 F 6, or C 4 F 8."
  ],
  "cpc": [
    "H10P 50/267",
    "H10B 12/00",
    "H10P 50/287",
    "H10W 20/01"
  ],
  "assignees": [
    "SAMSUNG ELECTRONICS CO LTD"
  ],
  "filing_date": "1998-09-25",
  "publication_date": "2000-03-28",
  "grant_date": "2000-03-28",
  "priority_date": "1997-09-26",
  "application_number": "US-16106598-A",
  "family_id": "19521761",
  "citations": [
    "US5851877A",
    "US5874336A",
    "US5930625A",
    "US5968374A"
  ]
}