Single-crystal silicon substrate, soi substrate, semiconductor device, display device, and manufacturing method of semiconductor device

{
  "publication_number": "US2009095956A1",
  "country": "US",
  "kind": "A1",
  "title": "Single-crystal silicon substrate, soi substrate, semiconductor device, display device, and manufacturing method of semiconductor device",
  "abstract": "A semiconductor device of the present invention is arranged in such a manner that a MOS non-single-crystal silicon thin-film transistor including a non-single-crystal silicon thin film made of polycrystalline silicon, a MOS single-crystal silicon thin-film transistor including a single-crystal silicon thin film, and a metal wiring are provided on an insulating substrate. With this arrangement, (i) a semiconductor device in which a non-single-crystal silicon thin film and a single-crystal silicon thin-film device are formed and high-performance systems are integrated, (ii) a method of manufacturing the semiconductor device, and (iii) a single-crystal silicon substrate for forming the single-crystal silicon thin-film device of the semiconductor device are obtained.",
  "claims": [
    "1. A single-crystal silicon substrate, comprising: an oxidized film, a gate pattern, and an impurity ion implanted interface on a surface of the single-crystal silicon substrate, and the surface is planarized after forming the oxidized film, the gate pattern, and the impurity ion implanted interface, and a dense position of implanted hydrogen ions, to which a predetermined concentration of hydrogen ions is implanted for a predetermined depth.",
    "2. A single-crystal silicon substrate, comprising: an impurity ion implanted/diffused area in which a PNP junction structure or an NPN junction structure, to which impurity ions are implanted, is provided near a surface of the single-crystal silicon substrate; and an oxidized film formed on the impurity ion implanted/diffused area.",
    "3. The single-crystal silicon substrate as defined in claim 2, further comprising a dense position of implanted hydrogen ions, to which a predetermined concentration of hydrogen ions is implanted for a predetermined depth.",
    "4. The single-crystal silicon substrate as defined in claim 1, wherein, a thickness of the oxidized film is not less than 200 nm.",
    "5. The single-crystal silicon substrate as defined in claim 2, wherein, a thickness of the oxidized film is not less than 200 nm.",
    "6. An SOI substrate in which a single-crystal thin film is provided on an insulating substrate, comprising: a bonded interface at which an insulating film formed on the insulating substrate is bonded with a covering film with which the single-crystal silicon substrate is covered, the single-crystal silicon substrate being separated at a dense position of implanted hydrogen ions so that the single-crystal silicon thin film is formed, the insulating substrate being a light-transmitting substrate, and the single-crystal silicon substrate being separated by means of heat treatment.",
    "7. An SOI substrate in which a single-crystal silicon thin film is provided on an insulating substrate, comprising: a bonded interface at which an insulating film formed on the insulating substrate is bonded with a covering film with which a single-crystal silicon substrate is covered, the single-crystal silicon thin film being formed by separating the single-crystal silicon substrate at a dense position of implanted hydrogen ions by means of heat treatment, and at the bonded interface, the insulating film is arranged to satisfy that a tan θ is not more than 0.06, where θ is the angle between (i) a maximum slope curve of micro-roughness, the micro-roughness being measured in a 1-5 μm square and not more than 5 nm in height, and (ii) an average surface plane.",
    "8. An SOI substrate in which a single-crystal silicon thin film is provided on an insulating substrate, comprising: a bonded interface at which an insulating film formed on the insulating substrate is bonded with a covering film with which a single-crystal silicon substrate is covered, the single-crystal silicon thin film being formed by separating the single-crystal silicon substrate at a dense position of implanted hydrogen ions by means of heat treatment, and contact angles of a surface of the insulating film and a surface of the covering film with respect to water being not more than 10°.",
    "9. An SOI substrate in which a single-crystal silicon thin film is provided on an insulating substrate, comprising: a bonded interface at which an insulating film formed on the insulating substrate is bonded with a covering film with which a single-crystal silicon substrate is covered, the single-crystal silicon thin film being formed by separating the single-crystal silicon substrate at a dense position of implanted hydrogen ions by means of heat treatment, and the insulating film being an oxidized silicon film formed by a plasma chemical vapor deposition method using a gas mixture of a TEOS gas and an oxygen gas.",
    "10. An SOI substrate in which a single-crystal silicon thin film is provided on an insulating substrate, comprising: a bonded interface at which an insulating film formed on the insulating substrate is bonded with a covering film with which a single-crystal silicon substrate is covered, the single-crystal silicon thin film being formed by separating the single-crystal silicon substrate at a dense position of implanted hydrogen ions by means of heat treatment, and at the bonded interface, the insulating film which is made of oxidized silicon and 5-300 nm thick being bonded.",
    "11. An SOI substrate in which a single-crystal silicon thin film is provided on an insulating substrate, comprising: a bonded interface at which an insulating film formed on the insulating substrate is bonded with a covering film with which a single-crystal silicon substrate is covered, the single-crystal silicon thin film being formed by separating the single-crystal silicon substrate at a dense position of implanted hydrogen ions by means of heat treatment, and a adhesive strength at the bonded interface being not less than 0.6 N/m.",
    "12. The SOI substrate as defined in claim 6, wherein, a single-crystal thin-film device is formed on the single-crystal silicon substrate, and the single-crystal thin-film contains the single-crystal thin-film device being formed by separating the single-crystal silicon substrate at the dense position by means of heat treatment.",
    "13. The SOI substrate as defined in claim 7, wherein, a single-crystal thin-film device is formed on the single-crystal silicon substrate, and the single-crystal thin-film contains the single-crystal thin-film device being formed by separating the single-crystal silicon substrate at the dense position by means of heat treatment.",
    "14. The SOI substrate as defined in claim 6, further comprising: a single-crystal silicon thin-film device manufactured from the single-crystal silicon thin film; and a non-single-crystal silicon thin-film device which is manufactured from a non-single-crystal silicon thin film provided in an area on the insulating substrate, the area being different from an area where the single-crystal silicon thin film is provided.",
    "15. The SOI substrate as defined in claim 7, further comprising: a single-crystal silicon thin-film device manufactured from the single-crystal silicon thin film; and a non-single-crystal silicon thin-film device which is manufactured from a non-single-crystal silicon thin film provided in an area on the insulating substrate, the area being different from an area where the single-crystal silicon thin film is provided.",
    "16. A display device, comprising: an SOI substrate including a single-crystal silicon thin film provided on an insulating substrate, on the single-crystal silicon thin film a semiconductor device structure being formed, wherein, the SOI substrate includes a bonded interface at which an insulating film formed on the insulating substrate is bonded with a covering film with which a single-crystal silicon substrate is covered, the single-crystal silicon substrate is separated at a dense position of implanted hydrogen ions by heat treatment so that the single-crystal silicon thin film is formed, and the insulating substrate is a light-transmitting substrate.",
    "17. A display device, comprising: a semiconductor device in which a non-single-crystal silicon thin-film device and a single-crystal silicon thin-film device are provided on different areas of an insulating substrate, the semiconductor device being used as an active matrix substrate of a display panel.",
    "18. A method of manufacturing a semiconductor device in which a single-crystal silicon thin-film device manufactured from a single-crystal silicon thin film and a non-single-crystal silicon thin film are formed on an insulating substrate, wherein, after a circuit including the single-crystal silicon thin-film device is formed on the insulating substrate, the non-single-crystal silicon thin film is formed.",
    "19. The method of manufacturing the semiconductor device as defined in claim 18, wherein, on the single-crystal silicon thin-film device, a protective interlayer insulating film, a contact hole, and a metal wiring are formed.",
    "20. The method of manufacturing the semiconductor device as defined in claim 18, wherein, after the single-crystal silicon thin-film device is formed, an interlayer insulating film is formed, and then the non-single-crystal silicon thin film is formed.",
    "21. A method of manufacturing a semiconductor device in which a single-crystal silicon thin-film device manufactured from a single-crystal silicon thin film and a non-single-crystal silicon thin film are formed on an insulating substrate, wherein, after the non-single-crystal silicon thin film is formed on the insulating substrate, the single-crystal silicon thin-film device is formed.",
    "22. The method of manufacturing the semiconductor device as defined in claim 18, wherein, the single-crystal silicon thin-film device is a MOS single-crystal silicon thin-film transistor.",
    "23. The method of manufacturing the semiconductor device as defined in claim 21, wherein, the single-crystal silicon thin-film device is a MOS single-crystal silicon thin-film transistor.",
    "24. The method of manufacturing the semiconductor device as defined in claim 18, wherein, the single-crystal silicon thin-film device is a bipolar single-crystal silicon thin-film transistor.",
    "25. The method of manufacturing the semiconductor device as defined in claim 21, wherein, the single-crystal silicon thin-film device is a bipolar single-crystal silicon thin-film transistor.",
    "26. The method of manufacturing the semiconductor device as defined in claim 18, wherein, with respect to a single-crystal silicon substrate for manufacturing the single-crystal silicon thin-film device, a predetermined concentration of hydrogen ions is implanted for a predetermined depth.",
    "27. The method of manufacturing the semiconductor device as defined in claim 21, wherein, with respect to a single-crystal silicon substrate for manufacturing the single-crystal silicon thin-film device, a predetermined concentration of hydrogen ions is implanted for a predetermined depth.",
    "28. The method of manufacturing the semiconductor device as defined in claim 26, wherein, an energy for implanting the hydrogen ions is arranged so that an energy which is figured out by subtracting an energy corresponding to a projection range of the hydrogen ions, the projection range corresponding to a thickness of an oxidized film, from the energy for implanting the hydrogen ions is smaller than an energy corresponding to a projection range of atoms constituting a material in a layer formed on the oxidized film.",
    "29. The method of manufacturing the semiconductor device as defined in claim 27, wherein, an energy for implanting the hydrogen ions is arranged so that an energy after subtracting an energy corresponding to a projection range of the hydrogen ions in a gate electrode material for a gate electrode thickness from an incident energy of the hydrogen ions is no more than an energy corresponding to a projection range of the heaviest ions of gate constituent materials for a gate oxide thickness.",
    "30. The method of manufacturing the semiconductor device as defined in claim 26, wherein, a thickness of the single-crystal silicon substrate including the dense position is about not more than 100 μm.",
    "31. The method of manufacturing the semiconductor device as defined in claim 27, wherein, a thickness of the single-crystal silicon substrate including the dense position is about not more than 100 μm.",
    "32. The method of manufacturing the semiconductor device as defined in claim 21, wherein, after the non-single-crystal silicon thin film is formed on the insulating substrate, at least a surface area from which the non-single-crystal silicon is removed and to which a single-crystal silicon is to be bonded is planarized in advance by performing a GCIB (Gas Cluster Ion Beam) using halide in approximately 3 keV.",
    "33. A method of manufacturing a semiconductor device, comprising the step of: (a) bonding an insulating film formed on an insulating substrate with a covering film with which a single-crystal silicon substrate is covered, the method further comprising the step of: (b) before the step (a), regulating a tangent of a maximum slope of micro-roughness on a surface of the insulating film to a surface plane of the insulating substrate, measured in a 1-5 μm square, is not more than 0.06, the micro-roughness being not more than 5 nm in height."
  ],
  "cpc": [
    "H10D 86/0214",
    "H10D 30/6731",
    "H10D 30/6744",
    "H10D 30/6745",
    "H10D 30/6746",
    "H10D 30/6758",
    "H10D 86/425",
    "H10D 86/471",
    "H10D 86/60",
    "H10K 59/12",
    "H10P 30/204",
    "H10P 30/208",
    "H10P 30/224",
    "H10P 30/225",
    "H10P 72/7432",
    "H10P 90/1916",
    "H10W 10/181",
    "H10W 90/00"
  ],
  "assignees": [
    "TAKAFUJI YUTAKA",
    "ITOGA TAKASHI"
  ],
  "filing_date": "2008-09-29",
  "publication_date": "2009-04-16",
  "priority_date": "2002-09-25",
  "application_number": "US-24042808-A",
  "family_id": "34279455",
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