Nmos metal gate materials, manufacturing methods, and equipment using cvd and ald processes with metal based precursors

{
  "publication_number": "US2011263115A1",
  "country": "US",
  "kind": "A1",
  "title": "Nmos metal gate materials, manufacturing methods, and equipment using cvd and ald processes with metal based precursors",
  "abstract": "Embodiments of the invention generally provide methods for depositing metal-containing materials and compositions thereof. The methods include deposition processes that form metal, metal carbide, metal silicide, metal nitride, and metal carbide derivatives by a vapor deposition process, including thermal decomposition, CVD, pulsed-CVD, or ALD. In one embodiment, a method for processing a substrate is provided which includes depositing a dielectric material having a dielectric constant greater than 10, forming a feature definition in the dielectric material, depositing a work function material conformally on the sidewalls and bottom of the feature definition, and depositing a metal gate fill material on the work function material to fill the feature definition, wherein the work function material is deposited by reacting at least one metal-halide precursor having the formula MX Y, wherein M is tantalum, hafnium, titanium, and lanthanum, X is a halide selected from the group of fluorine, chlorine, bromine, or iodine, and y is from 3 to 5.",
  "claims": [
    "1. A method for processing a substrate comprising: depositing a dielectric material having a dielectric constant greater than 10; forming a feature definition in the dielectric material; depositing a work function material conformally on the sidewalls and bottom of the feature definition; and depositing a metal gate fill material on the work function material to fill the feature definition, wherein the work function material is deposited by reacting at least one metal-halide precursor having the formula MX Y, wherein M is tantalum, hafnium, titanium, and lanthanum, X is a halide selected from the group of fluorine, chlorine, bromine, or iodine, and y is from 3 to 5. 2. The method of claim 1, wherein the work function material has a work function of less than 4.4 eV and a resistivity of less than 1,000 μΩ-cm. 3. The method of claim 1, wherein the metal gate fill material and the work function material are the same material. 4. The method of claim 1, wherein the metal gate fill material is aluminum, tungsten, copper, cobalt, or combinations thereof. 5. The method of claim 1, wherein the work function material is deposited by a thermal decomposition process, a plasma-enhanced chemical vapor deposition process, an atomic layer deposition process, or a plasma-enhanced atomic layer deposition process. 6. The method of claim 1, wherein the work function material is a lanthanum based material, a hafnium based material, a zirconium based material, a tantalum-based material, titanium based material, or combinations thereof. 7. The method for claim 6, wherein the work function material may further comprise carbon, nitrogen, silicon, aluminum, or combinations thereof. 8. The method of claim 1, wherein the work function material is one of a metal carbide material having the chemical formula of MC x, wherein x is within a range from about 0.5 to about 2 or a metal silicide material having the chemical formula of MSi x, wherein x is within a range from about 0.05 to about 2. 9. The method of claim 1, wherein the metal halide precursor is tantalum pentachloride, tantalum pentafluoride, hafnium tetrachloride, lanthanum trichloride, titanium tetrachloride, titanium tetrafluoride, or combinations thereof. 10. The method of claim 1, wherein the reaction process of the metal-halide precursor further comprises a nitrogen-free hydrogen based gas, a nitrogen-free carbon-containing gas, or a nitrogen-free silicon-containing gas. 11. The method of claim 10, wherein the work function material comprises tantalum carbide, hafnium carbide, lanthanum carbide, hafnium silicides, tantalum silicides, lanthanum silicides, tantalum silicide carbide, hafnium silicide carbide, lanthanum silicide carbide, hafnium aluminide carbide, tantalum aluminide carbide, lanthanum aluminide carbide, tantalum carbon nitride, tantalum aluminide nitride, lanthanum boride, hafnium boride, or combinations thereof. 12. The method of claim 1, wherein the reaction process of the metal-halide precursor further comprises reaction with an aluminum-based precursor. 13. The method of claim 1, wherein the reaction process of the metal-halide precursor further comprises: depositing the metal halide precursor; exposing the metal halide precursor to a hydrogen gas plasma; and reducing the halide concentration to less than 4 atomic percent of halide atoms. 14. The method of claim 1, wherein substrate temperature during the reaction process is from about 150° C. to about 425° C. 15. The method of claim 1, wherein the reaction process is an atomic layer deposition process. 16. The method of claim 15, wherein the atomic layer deposition process comprises one or more sequential cycles of: introducing a metal halide precursor into the processing chamber to form a first layer or first monolayer on the substrate surface; purging the metal halide precursor using a purge gas; introducing a nitrogen-free reactive gas into the processing chamber to form a second layer or second monolayer; purging the nitrogen-free reactive gas using the purge gas; introducing a plasma gas into the processing chamber; and generating a plasma, and purging the plasma gas from the processing chamber. 17. The method of claim 15, wherein the atomic layer deposition process comprises one or more sequential cycles of: introducing a metal halide precursor into the processing chamber to form a first layer or first monolayer on the substrate surface; purging the metal halide precursor using a purge gas; introducing a plasma gas into the processing chamber; generating a plasma; purging the plasma gas from the processing chamber; introducing a nitrogen free reactive gas into the processing chamber to form a second layer or second monolayer; and purging the processing chamber of the nitrogen free reactive gas. 18. The method of claim 15, wherein the atomic layer deposition process comprises one or more sequential cycles of: introducing a metal halide precursor into the processing chamber to form a first layer or first monolayer on the substrate surface; purging the metal halide precursor using a purge gas; introducing a first plasma gas into the processing chamber; generating a first plasma; purging the plasma gas from the processing chamber; introducing a nitrogen free reactive gas into the processing chamber to form a second layer or second monolayer; introducing a second plasma gas into the chamber; and generating a second plasma, and purging the second plasma gas from the processing chamber. 19. The method of claim 15, wherein the atomic layer deposition process comprises one or more sequential cycles of: introducing a metal halide precursor and a nitrogen free reactive gas into the processing chamber concurrently to form a first layer or first monolayer on the substrate surface; purging the chamber of the first and nitrogen free reactive gas; introducing a plasma gas into the chamber; generating a plasma; and purging the processing chamber of the plasma gas. 20. The method of claim 15, wherein the atomic layer deposition process comprises one or more sequential cycles of: introducing a metal halide precursor into the processing chamber to form a first layer or first monolayer on the substrate surface; purging the metal halide precursor using a purge gas introducing a nitrogen free reactive gas into the processing chamber; generating a plasma to form a second layer or second monolayer; and purging the nitrogen free reactive gas using the purge gas."
  ],
  "cpc": [
    "C23C 16/06",
    "C23C 16/32",
    "C23C 16/42",
    "C23C 16/45542",
    "H10D 64/013",
    "H10D 64/01316",
    "H10D 64/01318",
    "H10D 64/0132",
    "H10D 64/66",
    "H10D 64/665",
    "H10D 64/667",
    "H10D 84/017",
    "H10D 84/0177",
    "H10D 84/038",
    "H10P 14/432",
    "H10W 20/033",
    "H10W 20/042"
  ],
  "assignees": [
    "APPLIED MATERIALS INC"
  ],
  "filing_date": "2011-04-25",
  "publication_date": "2011-10-27",
  "priority_date": "2010-04-26",
  "application_number": "US-201113093710-A",
  "family_id": "44816161",
  "citations": [
    "US2004208994A1",
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    "US5055280A",
    "US6139922A",
    "US7148548B2"
  ]
}