Nbmc layers

{
  "publication_number": "US2017117141A1",
  "country": "US",
  "kind": "A1",
  "title": "Nbmc layers",
  "abstract": "Methods of forming thin-film structures including one or more NbMC layers, and structures and devices including the one or more NbMC layers are disclosed. The NbMC layers enable tuning of various structure and device properties, including resistivity, current leakage, and work function.",
  "claims": [
    "1. A method of forming a thin-film structure, the method comprising the steps of: providing a substrate within a reaction space; and using a first cyclic deposition process, forming a layer comprising NbAlC, on the surface of the substrate, wherein the first cyclic deposition process comprises at least one deposition cycle comprising exposing the substrate to a first precursor comprising Nb and a second precursor comprising aluminum and carbon. 2. The method of claim 1, wherein the first precursor comprises a niobium halide. 3. The method of claim 2, wherein the niobium halide comprises niobium chloride. 4. The method of claim 1, wherein the first cyclic deposition process comprises an atomic layer deposition cyclic process. 5. The method of claim 1, further comprising a step of introducing one or more plasma-excited species to the reaction space. 6. The method of claim 1, wherein the second precursor comprises an organometallic precursor. 7. The method of claim 1, wherein the second precursor comprises triethylaluminum (TEA). 8. The method of claim 1, wherein the second precursor comprises tritertbutylaluminum (TTBA). 9. The method of claim 1, further comprising using a second cyclic deposition process comprising at least one deposition cycle comprising exposing the substrate alternately to a third precursor comprising Nb and a fourth precursor comprising a metal and carbon, wherein at least one of: the third precursor differs from the first precursor and the fourth precursor differs from the second precursor. 10. The method of claim 1, wherein the NbAlC layer is a part of NMOS metal gate structure and the work function of the metal gate in the structure is less than about 4.5 eV. 11. The method of claim 1, wherein the deposition cycle further comprises exposing the substrate to a purge gas and/or removing excess first precursor and reaction by products, if any, from the substrate; and exposing the substrate to the purge gas and/or removing excess second precursor and reaction by products, if any, from the substrate; 12. The method of claim 1, wherein the NbAlC layer comprises at least about 20% of aluminum on atomic basis. 13. The method of claim 1, wherein the NbAlC layer resistivity is less than about 1000 μohm-cm. 14. The method of claim 1, wherein the second precursor comprises an aluminum hydrocarbon compound comprising a C2-C4 alkyl ligand. 15. The method of claim 1, further comprising depositing a layer comprising TiN before depositing the NbAlC layer. 16. The method of claim 1, further comprising exposing the substrate alternatively to a first precursor comprising Nb and a second precursor comprising aluminum and carbon. 17. A method of forming a thin-film structure, the method comprising the steps of: providing a substrate within a reaction space; and using a cyclic deposition process, forming a layer comprising NbMC, where M comprises one or more of a metal and a metalloid, on the surface of the substrate, wherein the cyclic deposition process comprises at least one deposition cycle comprising alternately providing to the surface of the substrate a first precursor comprising Nb and a second precursor comprising one or more of a metal and a metalloid and carbon. 18. The method of claim 17, wherein the cyclic deposition cycle is performed in a reaction space. 19. The method of claim 17, wherein the cyclic deposition cycle is performed using a spatial deposition reactor. 20. A thin-film structure comprising: a substrate; and a layer comprising NbMC, where M represents one or more of a metal and a metalloid, formed overlying the substrate, wherein the layer comprising NbMC comprises about 10 at % to about 40 at % Nb, about 10 at % to about 40 at % M, and about 30 at % to about 60 at % C. 21. The structure of claim 20, wherein the structure further comprises a layer comprising TiN overlying the layer comprising NbMC. 22. The structure of claim 20, wherein M comprises aluminum. 23. The structure of claim 20, wherein a resistivity of the layer comprising NbMC is less than about 1000 μohm-cm. 24. The structure of claim 20, wherein a work function of the thin-film structure is ≦4.5 eV, as measured on electronic test structures."
  ],
  "description_excerpt": "The present disclosure generally relates to techniques for forming structures including one or more niobium metal or metalloid carbide (NbMC) layers, to devices including the one or more niobium metal or metalloid carbide layers, and to methods of forming the structures and devices.\n\nField-effect transistor (FET) devices, such as metal-oxide-semiconductor FET (MOSFET) devices generally include a source region, a drain region, a channel region between the source and drain regions, and a gate electrode overlying the channel region and separated from the channel region by a dielectric material. A complimentary MOSFET (CMOS) device includes a p-type MOSFET device and an n-type MOSFET device. There are also three-dimensional transistor architectures like FinFET's. To operate as desired, a work function of the gate electrode of the n-type device and of the p-type device must differ by a certain amount. The difference in the work function is generally obtained by tuning the gate electrode material.\n\nTraditionally, MOSFET devices are formed using silicon oxide as the dielectric material and polysilicon as the gate electrode material. Polysilicon has worked relatively well as a gate electrode material, because it allows relatively easy tuning of a work function of the devices and consequently a threshold voltage of the devices.\n\nAs MOSFET devices are scaled down to meet desired performance criteria, metal has generally replaced polysilicon as a gate electrode material and high dielectric constant material has generally replaced silicon oxide as the dielectric material for high performance devices.",
  "cpc": [
    "H01L 21/02194",
    "C23C 16/045",
    "C23C 16/32",
    "C23C 16/45531",
    "C23C 16/45536",
    "H01L 21/02205",
    "H01L 21/0228",
    "H01L 29/517",
    "H10D 30/60",
    "H10D 64/01318",
    "H10D 64/667",
    "H10D 64/669",
    "H10P 14/412",
    "H10P 14/432",
    "H10P 14/6339",
    "H10P 14/6514",
    "H10P 14/66",
    "H10P 14/69391",
    "H10P 14/69397"
  ],
  "ipc": [
    "H01L 21/02",
    "H10D 30/01",
    "H10D 64/27",
    "H10D 64/66",
    "H10D 64/68",
    "C23C 16/04",
    "C23C 16/32",
    "C23C 16/455",
    "H01L 21/285",
    "H01L 21/3205"
  ],
  "assignees": [
    "ASM IP Holding BV"
  ],
  "inventors": [
    "Chiyu Zhu",
    "Timo Asikainen",
    "Robert Brennan Milligan"
  ],
  "filing_date": "2015-10-21",
  "publication_date": "2017-04-27",
  "priority_date": "2015-10-21",
  "application_number": "US-201514919536-A",
  "family_id": "58558934",
  "cited_by_count": 471
}