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Patent · US10699878B2 · B2 · US

Chamber member of a plasma source and pedestal with radially outward positioned lift pins for translation of a substrate c-ring

(11) Publication number
US10699878B2
(21) Application number
15/428,585
(22) Filing date
2017-02-09
(30) Priority date
2016-02-12
(43) Publication date
2020-06-30
(45) Date of grant
2020-06-30
(51) IPC
H01J 37/32; H10P 14/60; H10P 72/00; H10P 72/76
(52) CPC
  • H01J Electric discharge tubes or discharge lamps: 37/32458, 2237/334, 37/32082, 37/321, 37/32174, 37/3244, 37/32495, 37/32532, 37/32651, 37/32715, 37/32724
  • H10P Generic processes or apparatus for the manufacture or treatment of devices covered by class H10: 72/04, 72/7612
(73) Assignee
Lam Research Corp
(72) Inventors
James Eugene Caron; Ivelin Angelov; Jason Lee Treadwell; Joon Hong Park; Canfeng Lai
(54) Title
Chamber member of a plasma source and pedestal with radially outward positioned lift pins for translation of a substrate c-ring
(57) Abstract

A chamber member of a plasma source is provided and includes a sidewall, a transition member, a top wall and an injector connecting member. The sidewall is cylindrically-shaped and surrounds an upper region of a substrate processing chamber. The transition member is connected to the sidewall. The top wall is connected to the transition member. The injector connecting member is connected to the top wall, positioned vertically higher than the sidewall, and configured to connect to a gas injector. Gas passes through the injector connecting member via the gas injector and into the upper region of the substrate processing chamber. A center height to low inner diameter ratio of the chamber member is 0.25-0.5 and/or a center height to outer height ratio of the chamber member is 0.4-0.85.

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Claims (27)

  1. A chamber member of a plasma source comprising: a sidewall surrounding an upper region of a substrate processing chamber, wherein the sidewall is cylindrically-shaped; a transition member connected to the sidewall; a top wall connected to the transition member; and an injector connecting member connected to the top wall, positioned vertically higher than the sidewall, and configured to connect to a gas injector, wherein gas passes through the injector connecting member via the gas injector and into the upper region of the substrate processing chamber, wherein an angle between the sidewall and the tog wall is between 100-145°, a thickness of at least one of the sidewall, the transition member, the top wall, or the injector connecting member is 0.4-0.6 inches, and at least one of a center height to low inner diameter ratio of the chamber member is 0.25-0.5, or an outer height to center height ratio of the chamber member is 0.4-0.85.
  2. The chamber member of claim 1, wherein the top wall is semi-linear shaped.
  3. The chamber member of claim 1, wherein the top wall is linear shaped.
  4. The chamber member of claim 1, wherein the center height to low inner diameter ratio of the chamber member is 0.35-0.45.
  5. The chamber member of claim 1, wherein the outer height to center height ratio of the chamber member is 0.5-0.6.
  6. A plasma source comprising: the chamber member of claim 1; a first coil disposed above a center portion of the chamber member and around the injector connecting member; and a second coil disposed around the sidewall.
  7. The plasma source of claim 6, wherein the first coil and the second coil are connected in series.
  8. The plasma source of claim 6, wherein the first coil and the second coil are connected in parallel.
  9. The chamber member of claim 8, further comprising a third coil connected in series with one of the first coil and the second coil.
  10. The chamber member of claim 8, further comprising: a third coil disposed above the center portion of the chamber member and around the injector connecting member and connected in series with the first coil; and a fourth coil disposed around the sidewall and connected in series with the second coil.
  11. The plasma source of claim 6, further comprising: a generator supplying current to the first coil and the second coil; and a controller configured to control the supply of current to the first coil and the second coil, wherein current supplied to the first coil is controlled independently of current supplied to the second coil.
  12. The plasma source of claim 6 further comprising a diffuser configured to spread gases in the upper region of the substrate processing chamber.
  13. The plasma source of claim 12, wherein: the diffuser includes a plurality of channels; and the plurality of channels receive respective gases.
  14. A protective enclosure comprising: the plasma source of claim 6; a ground separation shield separating a first enclosed area of the protective enclosure from a second enclosed area of the protective enclosure; and connector pins disposed partially within the first area and connected to a capacitor and the first coil, wherein the capacitor is disposed in the first area, and wherein the plasma source is disposed in the second area.
  15. A substrate processing chamber comprising: the chamber member of claim 1; and a second injector that injects gas upward and into the substrate processing chamber.
  16. A substrate processing chamber comprising: the chamber member of claim 1; and a second injector that injects gas downward, below a distribution plate or showerhead, and into the substrate processing chamber.
  17. A substrate processing chamber comprising: the chamber member of claim 1; a distribution plate; and a second injector that injects gas through the distribution plate and into the substrate processing chamber.
  18. A substrate processing system comprising: the chamber member of claim 1; a plasma source comprising the chamber member; a plurality of radio frequency components including a capacitance; a ground shield; and a protective enclosure, wherein the plasma source, the plurality of radio frequency components and the ground shield are disposed within the protective enclosure, and the ground shield separates the plurality of radio frequency components from the plasma source.
  19. The substrate processing system of claim 18, wherein the protective enclosure comprises: a top wall; insulators connected to the top wall of the protective enclosure; pins that pass through the insulators; and a controller that connects to the pins and supplies current to the plurality of radio frequency components.
  20. The substrate processing system of claim 18, further comprising a pedestal, wherein the pedestal comprises: a radio frequency electrode; a plurality of lift pins that are located radially outside the radio frequency electrode; and a c-ring that receives a substrate, wherein the plurality of lift pins move the c-ring relative to the pedestal.
  21. The chamber member of claim 1, wherein the thickness of the at least one of the sidewall, the transition member, the top wall, or the injector connecting member is 0.5 inches.
  22. The chamber member of claim 1, wherein the thickness of each of the sidewall, the transition member, the top wall, and the injector connecting member is 0.4-0.6 inches.
  23. A plasma source comprising: a chamber member comprising a sidewall surrounding an upper region of a substrate processing chamber, wherein the sidewall is cylindrically-shaped, a transition member connected to the sidewall, a top wall connected to the transition member, and an injector connecting member connected to the top wall, positioned vertically higher than the sidewall, and configured to connect to a gas injector, wherein gas passes through the injector connecting member via the gas injector and into the upper region of the substrate processing chamber, wherein an angle between the sidewall and the top wall is between 100-145°, and at least one of a center height to low inner diameter ratio of the chamber member is 0.25-0.5, or an outer height to center height ratio of the chamber member is 0.4-0.85; a first coil disposed above a center portion of the chamber member and around the injector connecting member; a second coil disposed around the sidewall; and a third coil connected in series with one of the first coil and the second coil and disposed around one of the injector connecting member or the sidewall.
  24. The plasma source of claim 23, wherein the third coil is connected in series with the first coil and disposed above the center portion and around the injector connecting member.
  25. The plasma source of claim 23, wherein the third coil is connected in series with the second coil and disposed around the sidewall.
  26. The plasma source of claim 23, further comprising a fourth coil connected in series with the second coil and disposed around the sidewall, wherein the third coil is connected in series with the first coil and disposed above the center portion and around the injector connecting member.
  27. A protective enclosure comprising: the plasma source of claim 23; a ground separation shield separating a first enclosed area of the protective enclosure from a second enclosed area of the protective enclosure; and connector pins disposed partially within the first area and connected to a capacitor and the first coil, wherein the capacitor is disposed in the first area, and wherein the plasma source is disposed in the second area.

Description

The present disclosure relates to substrate processing, and more particularly to structures of a plasma source and pedestal.

The background description provided here is for the purpose of generally presenting the context of the disclosure. Work of the presently named inventors, to the extent it is described in this background section, as well as aspects of the description that may not otherwise qualify as prior art at the time of filing, are neither expressly nor impliedly admitted as prior art against the present disclosure.

Substrate processing systems may be used to etch film on a substrate such as a semiconductor wafer. The substrate processing systems typically include a substrate processing chamber, a gas distribution device and a substrate support. During processing, the substrate is arranged on the substrate support. Different gas mixtures may be introduced into the substrate processing chamber and radio frequency (RF) plasma may be generated to activate chemical reactions. The RF plasma may be an inductively coupled plasma (ICP) or a transformer coupled plasma (TCP). The ICP or TCP may be provided by a plasma source as a result of charging one or more coils. The plasma source includes an upper portion of a substrate processing chamber and the one or more coils.

A chamber member of an ICP source may be cylindrically-shaped or dome-shaped. A chamber member of a TCP source may be flat-shaped. A cylindrically-shaped chamber member of an ICP source has coils located around a circumference of the chamber member.

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Record as JSON 
{
  "publication_number": "US10699878B2",
  "country": "US",
  "kind": "B2",
  "title": "Chamber member of a plasma source and pedestal with radially outward positioned lift pins for translation of a substrate c-ring",
  "abstract": "A chamber member of a plasma source is provided and includes a sidewall, a transition member, a top wall and an injector connecting member. The sidewall is cylindrically-shaped and surrounds an upper region of a substrate processing chamber. The transition member is connected to the sidewall. The top wall is connected to the transition member. The injector connecting member is connected to the top wall, positioned vertically higher than the sidewall, and configured to connect to a gas injector. Gas passes through the injector connecting member via the gas injector and into the upper region of the substrate processing chamber. A center height to low inner diameter ratio of the chamber member is 0.25-0.5 and/or a center height to outer height ratio of the chamber member is 0.4-0.85.",
  "claims": [
    "1. A chamber member of a plasma source comprising: a sidewall surrounding an upper region of a substrate processing chamber, wherein the sidewall is cylindrically-shaped; a transition member connected to the sidewall; a top wall connected to the transition member; and an injector connecting member connected to the top wall, positioned vertically higher than the sidewall, and configured to connect to a gas injector, wherein gas passes through the injector connecting member via the gas injector and into the upper region of the substrate processing chamber, wherein an angle between the sidewall and the tog wall is between 100-145°, a thickness of at least one of the sidewall, the transition member, the top wall, or the injector connecting member is 0.4-0.6 inches, and at least one of a center height to low inner diameter ratio of the chamber member is 0.25-0.5, or an outer height to center height ratio of the chamber member is 0.4-0.85.",
    "2. The chamber member of claim 1, wherein the top wall is semi-linear shaped.",
    "3. The chamber member of claim 1, wherein the top wall is linear shaped.",
    "4. The chamber member of claim 1, wherein the center height to low inner diameter ratio of the chamber member is 0.35-0.45.",
    "5. The chamber member of claim 1, wherein the outer height to center height ratio of the chamber member is 0.5-0.6.",
    "6. A plasma source comprising: the chamber member of claim 1; a first coil disposed above a center portion of the chamber member and around the injector connecting member; and a second coil disposed around the sidewall.",
    "7. The plasma source of claim 6, wherein the first coil and the second coil are connected in series.",
    "8. The plasma source of claim 6, wherein the first coil and the second coil are connected in parallel.",
    "9. The chamber member of claim 8, further comprising a third coil connected in series with one of the first coil and the second coil.",
    "10. The chamber member of claim 8, further comprising: a third coil disposed above the center portion of the chamber member and around the injector connecting member and connected in series with the first coil; and a fourth coil disposed around the sidewall and connected in series with the second coil.",
    "11. The plasma source of claim 6, further comprising: a generator supplying current to the first coil and the second coil; and a controller configured to control the supply of current to the first coil and the second coil, wherein current supplied to the first coil is controlled independently of current supplied to the second coil.",
    "12. The plasma source of claim 6 further comprising a diffuser configured to spread gases in the upper region of the substrate processing chamber.",
    "13. The plasma source of claim 12, wherein: the diffuser includes a plurality of channels; and the plurality of channels receive respective gases.",
    "14. A protective enclosure comprising: the plasma source of claim 6; a ground separation shield separating a first enclosed area of the protective enclosure from a second enclosed area of the protective enclosure; and connector pins disposed partially within the first area and connected to a capacitor and the first coil, wherein the capacitor is disposed in the first area, and wherein the plasma source is disposed in the second area.",
    "15. A substrate processing chamber comprising: the chamber member of claim 1; and a second injector that injects gas upward and into the substrate processing chamber.",
    "16. A substrate processing chamber comprising: the chamber member of claim 1; and a second injector that injects gas downward, below a distribution plate or showerhead, and into the substrate processing chamber.",
    "17. A substrate processing chamber comprising: the chamber member of claim 1; a distribution plate; and a second injector that injects gas through the distribution plate and into the substrate processing chamber.",
    "18. A substrate processing system comprising: the chamber member of claim 1; a plasma source comprising the chamber member; a plurality of radio frequency components including a capacitance; a ground shield; and a protective enclosure, wherein the plasma source, the plurality of radio frequency components and the ground shield are disposed within the protective enclosure, and the ground shield separates the plurality of radio frequency components from the plasma source.",
    "19. The substrate processing system of claim 18, wherein the protective enclosure comprises: a top wall; insulators connected to the top wall of the protective enclosure; pins that pass through the insulators; and a controller that connects to the pins and supplies current to the plurality of radio frequency components.",
    "20. The substrate processing system of claim 18, further comprising a pedestal, wherein the pedestal comprises: a radio frequency electrode; a plurality of lift pins that are located radially outside the radio frequency electrode; and a c-ring that receives a substrate, wherein the plurality of lift pins move the c-ring relative to the pedestal.",
    "21. The chamber member of claim 1, wherein the thickness of the at least one of the sidewall, the transition member, the top wall, or the injector connecting member is 0.5 inches.",
    "22. The chamber member of claim 1, wherein the thickness of each of the sidewall, the transition member, the top wall, and the injector connecting member is 0.4-0.6 inches.",
    "23. A plasma source comprising: a chamber member comprising a sidewall surrounding an upper region of a substrate processing chamber, wherein the sidewall is cylindrically-shaped, a transition member connected to the sidewall, a top wall connected to the transition member, and an injector connecting member connected to the top wall, positioned vertically higher than the sidewall, and configured to connect to a gas injector, wherein gas passes through the injector connecting member via the gas injector and into the upper region of the substrate processing chamber, wherein an angle between the sidewall and the top wall is between 100-145°, and at least one of a center height to low inner diameter ratio of the chamber member is 0.25-0.5, or an outer height to center height ratio of the chamber member is 0.4-0.85; a first coil disposed above a center portion of the chamber member and around the injector connecting member; a second coil disposed around the sidewall; and a third coil connected in series with one of the first coil and the second coil and disposed around one of the injector connecting member or the sidewall.",
    "24. The plasma source of claim 23, wherein the third coil is connected in series with the first coil and disposed above the center portion and around the injector connecting member.",
    "25. The plasma source of claim 23, wherein the third coil is connected in series with the second coil and disposed around the sidewall.",
    "26. The plasma source of claim 23, further comprising a fourth coil connected in series with the second coil and disposed around the sidewall, wherein the third coil is connected in series with the first coil and disposed above the center portion and around the injector connecting member.",
    "27. A protective enclosure comprising: the plasma source of claim 23; a ground separation shield separating a first enclosed area of the protective enclosure from a second enclosed area of the protective enclosure; and connector pins disposed partially within the first area and connected to a capacitor and the first coil, wherein the capacitor is disposed in the first area, and wherein the plasma source is disposed in the second area."
  ],
  "description_excerpt": "The present disclosure relates to substrate processing, and more particularly to structures of a plasma source and pedestal.\n\nThe background description provided here is for the purpose of generally presenting the context of the disclosure. Work of the presently named inventors, to the extent it is described in this background section, as well as aspects of the description that may not otherwise qualify as prior art at the time of filing, are neither expressly nor impliedly admitted as prior art against the present disclosure.\n\nSubstrate processing systems may be used to etch film on a substrate such as a semiconductor wafer. The substrate processing systems typically include a substrate processing chamber, a gas distribution device and a substrate support. During processing, the substrate is arranged on the substrate support. Different gas mixtures may be introduced into the substrate processing chamber and radio frequency (RF) plasma may be generated to activate chemical reactions. The RF plasma may be an inductively coupled plasma (ICP) or a transformer coupled plasma (TCP). The ICP or TCP may be provided by a plasma source as a result of charging one or more coils. The plasma source includes an upper portion of a substrate processing chamber and the one or more coils.\n\nA chamber member of an ICP source may be cylindrically-shaped or dome-shaped. A chamber member of a TCP source may be flat-shaped. A cylindrically-shaped chamber member of an ICP source has coils located around a circumference of the chamber member.",
  "cpc": [
    "H01J 37/32458",
    "H01J 2237/334",
    "H01J 37/32082",
    "H01J 37/321",
    "H01J 37/32174",
    "H01J 37/3244",
    "H01J 37/32495",
    "H01J 37/32532",
    "H01J 37/32651",
    "H01J 37/32715",
    "H01J 37/32724",
    "H10P 72/04",
    "H10P 72/7612"
  ],
  "ipc": [
    "H01J 37/32",
    "H10P 14/60",
    "H10P 72/00",
    "H10P 72/76"
  ],
  "assignees": [
    "Lam Research Corp"
  ],
  "inventors": [
    "James Eugene Caron",
    "Ivelin Angelov",
    "Jason Lee Treadwell",
    "Joon Hong Park",
    "Canfeng Lai"
  ],
  "filing_date": "2017-02-09",
  "publication_date": "2020-06-30",
  "grant_date": "2020-06-30",
  "priority_date": "2016-02-12",
  "application_number": "US-201715428585-A",
  "family_id": "59562267",
  "cited_by_count": 12,
  "citations": [
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}

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