Gas flow system

{
  "publication_number": "US11211230B2",
  "country": "US",
  "kind": "B2",
  "title": "Gas flow system",
  "abstract": "A gas flow system is provided, including a gas flow source, one or more gas inlets, one or more gas outlets, a gas flow region, a low pressure region, wherein the low pressure region is fluidly coupled to the one or more gas outlets, a high pressure region, and a gap. The one or more gas inlets are fluidly coupleable to the gas flow source. The gas flow region is fluidly coupled to the one or more gas inlets and the one or more gas outlets. The gap fluidly couples the gas flow region to the high pressure region. The high pressure region near the targets allows for process gas interactions with the target to sputter onto the substrate below. The low pressure region near the substrate prevents unwanted chemical interactions between the process gas and the substrate.",
  "claims": [
    "1. A gas flow system, comprising: one or more gas inlets fluidly coupleable to a gas flow source; one or more gas outlets; a gas flow region, wherein the gas flow region is fluidly coupled to the one or more gas inlets and the one or more gas outlets; a low pressure region, wherein the low pressure region is fluidly coupled to the one or more gas outlets; a high pressure region fluidly coupled to the gas flow region via a gap between a first plate and a second plate, wherein the first plate separates the gas flow region from the high pressure region; an elbow path fluidly coupled to the high pressure region; a flow pipe fluidly coupled to the elbow path; and a pressure gauge fluidly coupled to the flow pipe, the pressure gauge configured to measure pressure in the high pressure region.",
    "2. The gas flow system of claim 1, wherein the gap is formed between a bottom end of the first plate and a top surface of the second plate, and wherein the second plate separates the high pressure region from the low pressure region.",
    "3. The gas flow system of claim 1, further comprising: the gas flow source fluidly coupled to the gas flow region via the one or more gas inlets; and a vacuum pump fluidly coupled to the low pressure region, the vacuum pump configured to maintain low pressure in the low pressure region.",
    "4. The gas flow system of claim 3, wherein a rate of gas flow from the gas flow source and the vacuum pump are controlled to maintain a pressure gradient between the high pressure region and the low pressure region.",
    "5. The gas flow system of claim 3, wherein a process gas supplied by the gas flow source comprises argon gas (Ar).",
    "6. The gas flow system of claim 3, wherein a process gas supplied by the gas flow source comprises nitrogen gas (N 2) or oxygen gas (O 2).",
    "7. The gas flow system of claim 1, wherein an aperture is disposed in the second plate, wherein the second plate is a top panel separating the high pressure region from the low pressure region, and wherein the aperture fluidly couples the low pressure region and the high pressure region.",
    "8. A processing system, comprising: a gas flow system, comprising: a gas flow source; one or more gas inlets, wherein the one or more gas inlets are fluidly coupled to the gas flow source; one or more gas outlets; a gas flow region, wherein the gas flow region is fluidly coupled to the one or more gas inlets and the one or more gas outlets; a low pressure region, wherein the low pressure region is fluidly coupled to the one or more gas outlets; a high pressure region fluidly coupled to the gas flow region via a gap between a first plate and a second plate, wherein the first plate separates the gas flow region from the high pressure region; an elbow path fluidly coupled to the high pressure region; a flow pipe fluidly coupled to the elbow path; and a pressure gauge fluidly coupled to the flow pipe, the pressure gauge configured to measure pressure in the high pressure region; and a moveable substrate support disposed in the low pressure region, wherein the moveable substrate support is configured to move along a movement path.",
    "9. The processing system of claim 8, wherein the gas flow system further comprises a vacuum pump fluidly coupled to the low pressure region, the vacuum pump configured to maintain low pressure in the low pressure region.",
    "10. The processing system of claim 9, wherein a rate of gas flow from the gas flow source and the vacuum pump are controlled to maintain a pressure gradient between the high pressure region and the low pressure region.",
    "11. The processing system of claim 8, wherein the moveable substrate support comprises: a support structure, comprising: a substrate support surface; a ring, the substrate support surface surrounded by the ring; and a halo; a robot arm, the robot arm connected to the support structure; and a robot actuator connected to the robot arm, wherein the robot actuator is configured to move the robot arm and the substrate support surface along the movement path.",
    "12. The processing system of claim 8, wherein the gap is formed between a bottom end of the first plate and a top surface of the second plate, and wherein the second plate separates the high pressure region from the low pressure region.",
    "13. The processing system of claim 8, wherein a portion of the moveable substrate support does not cover at least one of the gas inlets or at least one of the gas outlets along any portion of the movement path.",
    "14. A processing chamber, comprising: a gas flow system, comprising: a gas flow source; one or more gas inlets, wherein the one or more gas inlets are fluidly coupled to the gas flow source; one or more gas outlets; a gas flow region, wherein the gas flow region is fluidly coupled to the one or more gas inlets and the one or more gas outlets; a low pressure region, wherein the low pressure region is fluidly coupled to the one or more gas outlets; a high pressure region fluidly coupled to the gas flow region via a gap; an elbow path fluidly coupled to the high pressure region; a flow pipe fluidly coupled to the elbow path; and a pressure gauge fluidly coupled to the flow pipe, the pressure gauge configured to measure pressure in the high pressure region; a moveable substrate support, comprising: a support structure, comprising: a substrate support surface; a ring, the substrate support surface surrounded by the ring; and a halo; a robot arm, the robot arm connected to the support structure; and a robot actuator connected to the robot arm, wherein the robot actuator is configured to move the robot arm and the substrate support surface along a movement path; a top panel having an aperture disposed therethrough, the top panel separating the high pressure region from the low pressure region, the aperture fluidly coupling the high pressure region to the low pressure region, and the gap being formed between the top panel and a side plate separating the gas flow region from the high pressure region; one or more chamber walls; and a chamber bottom, wherein an interior volume is at least partially bounded by the top panel, one or more chamber walls, and the chamber bottom, the moveable substrate support disposed within the interior volume, and wherein the interior volume contains the low pressure region.",
    "15. The processing chamber of claim 14, wherein the gap is formed between a bottom end of the side plate and a top surface of the top panel.",
    "16. The processing chamber of claim 14, wherein the gas flow system further comprises a vacuum pump fluidly coupled to the low pressure region, the vacuum pump configured to maintain low pressure in the low pressure region.",
    "17. The processing chamber of claim 16, wherein a rate of gas flow from the gas flow source and the operation of the vacuum pump are controlled to maintain a pressure gradient between the high pressure region and the low pressure region.",
    "18. The processing chamber of claim 14, wherein a portion of the moveable substrate support does not cover at least one of the gas inlets or at least one of the gas outlets along any portion of the movement path.",
    "19. The processing chamber of claim 14, wherein the movement path is approximately a straight line."
  ],
  "description_excerpt": "Embodiments of the invention relate to an apparatus and, more specifically, to a gas flow system.\n\nIntegrated circuits (IC) may include more than one million micro-electronic devices such as transistors, capacitors, and resistors. Modern ICs are manufactured in processing chambers using a multitude of steps, such as sputter deposition. Sputter deposition is a physical vapor deposition (PVD) method of thin film deposition by sputtering. This involves ejecting material from a target onto a substrate, such as a silicon wafer. Sputtered atoms ejected from the target have a wide energy distribution, typically up to tens of eV. The sputtered ions can ballistically fly from the target in straight lines and impact energetically on substrates within the processing chamber, on walls of the processing chamber, or on other components of the processing chamber.\n\nSputtering is used extensively in the semiconductor industry to deposit thin films of various materials in IC processing. Thin antireflection coatings on glass for optical applications are also deposited by sputtering. Because of the low substrate temperatures used, sputtering is an ideal method to deposit contact metals for thin-film transistors. Another familiar application of sputtering is low-emissivity coatings on glass, used in double-pane window assemblies. The coating is a multilayer containing silver and metal oxides such as zinc oxide, tin oxide, or titanium dioxide.",
  "cpc": [
    "H01J 37/32449",
    "B25J 18/00",
    "C23C 14/0036",
    "C23C 14/04",
    "C23C 14/228",
    "C23C 14/34",
    "C23C 14/352",
    "C23C 14/50",
    "C23C 14/54",
    "C23C 14/56",
    "C23C 14/568",
    "H01J 2237/006",
    "H01J 2237/202",
    "H01J 37/32642",
    "H01J 37/32715"
  ],
  "ipc": [
    "B25J 18/00",
    "C23C 14/34",
    "C23C 14/50",
    "H01J 37/32"
  ],
  "assignees": [
    "Applied Materials Inc"
  ],
  "inventors": [
    "Keith A. Miller",
    "Wei W. Wang",
    "Alexander ERENSTEIN",
    "John J. Mazzocco"
  ],
  "filing_date": "2020-04-02",
  "publication_date": "2021-12-28",
  "grant_date": "2021-12-28",
  "priority_date": "2019-04-22",
  "application_number": "US-202016838987-A",
  "family_id": "72830842",
  "cited_by_count": 0,
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  ]
}