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Patent · US10794681B2 · B2 · US

Long range capacitive gap measurement in a wafer form sensor system

(11) Publication number
US10794681B2
(21) Application number
16/121,191
(22) Filing date
2018-09-04
(30) Priority date
2018-09-04
(43) Publication date
2020-10-06
(45) Date of grant
2020-10-06
(51) IPC
G01B 7/14; H01J 37/32; H10P 14/60; H10P 72/00; G01B 7/00; G01B 7/02; G01B 7/06; G01R 27/26
(52) CPC
  • G01B Measuring length, thickness or similar linear dimensions; measuring angles; measuring areas; measuring irregularities of surfaces or contours: 7/14, 7/003, 7/023, 7/08, 7/087
  • B65H Handling thin or filamentary material, e.g. sheets, webs, cables: 2220/03, 2511/13, 2511/16, 2511/162, 2515/70, 2515/712
  • H01J Electric discharge tubes or discharge lamps: 2237/2446, 2237/24578, 37/32807, 37/32935
  • H10P Generic processes or apparatus for the manufacture or treatment of devices covered by class H10: 72/06, 74/203, 74/238, 74/277
(73) Assignee
Applied Materials Inc
(72) Inventors
Charles G. Potter; Eli Mor
(54) Title
Long range capacitive gap measurement in a wafer form sensor system
(57) Abstract

Embodiments disclosed herein include a sensor wafer. In an embodiment, the sensor wafer comprises a substrate, wherein the substrate comprises a first surface and a second surface opposite the first surface. In an embodiment, the sensor wafer further comprises a first conductive pad with a first surface area, wherein the first conductive pad has a surface that is substantially coplanar with the first surface of the substrate. In an embodiment, the sensor wafer further comprises a second conductive pad with a second surface area that is smaller than the first surface area, wherein the second conductive pad has a surface that is substantially coplanar with the first surface of the substrate.

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Claims (19)

  1. A sensor wafer, comprising: a substrate, wherein the substrate comprises a first surface and a second surface opposite the first surface; a first conductive pad with a first surface area, wherein the first conductive pad has a surface that is substantially coplanar with the first surface of the substrate, and wherein an edge of the first conductive pad that faces an edge of the substrate has a curvature that matches a curvature of the substrate; and a second conductive pad with a second surface area that is smaller than the first surface area, wherein the second conductive pad has a surface that is substantially coplanar with the first surface of the substrate, and wherein an edge of the second conductive pad that faces an edge of the substrate has a curvature that matches the curvature of the substrate.
  2. The sensor wafer of claim 1, wherein the second surface area is at least 5% smaller than the first surface area.
  3. The sensor wafer of claim 1, further comprising: a plurality of first conductive pads; and a plurality of second conductive pads.
  4. The sensor wafer of claim 3, wherein the first conductive pads and the second conductive pads are arranged in an alternating pattern around a perimeter of the substrate.
  5. The sensor wafer of claim 1, further comprising: an electric field guard around the perimeters of the first conductive pad and the second conductive pad.
  6. The sensor wafer of claim 1, wherein a shortest distance between an edge of the first conductive pad or an edge of the second conductive pad and an edge of the substrate is at least 1 inch.
  7. The sensor wafer of claim 1, further comprising: a control module embedded in the substrate, wherein the control module comprises circuitry for sensing a distance between the first surface of the substrate and a surface external to the sensor wafer opposing the first surface using the first conductive pad and the second conductive pad.
  8. The sensor wafer of claim 7, wherein the circuitry provides an output phase of the first conductive pad that is 180 degrees offset from an output phase of the second conductive pad.
  9. The sensor wafer of claim 7, wherein the distance between the first surface of the substrate and a surface external to the sensor wafer is up to 1.5 inches.
  10. The sensor wafer of claim 9, wherein an accuracy of the measured distance is at least +/−0.0005 inches.
  11. The sensor wafer of claim 7, wherein the control module further comprises a wireless communication module, wherein the wireless communication module transmits measurement data to an external device.
  12. A method for measuring a gap between a showerhead and a support surface in a processing chamber, comprising: pumping down a processing chamber, wherein the processing chamber comprises a support surface and a showerhead opposing the support surface; placing a sensor wafer on the support surface, wherein the sensor wafer comprises a first conductive pad with a first surface area and a second conductive pad with a second surface area that is smaller than the first surface area; measuring a gap between the sensor wafer and the showerhead with the first conductive pad and the second conductive pad, wherein measuring the gap comprises providing an output phase to the first conductive pad that is 180 degrees offset from an output phase of the second conductive pad; and removing the sensor wafer from the processing chamber without venting the processing chamber.
  13. The method of claim 12, wherein the gap between the sensor wafer and the showerhead is greater than 1 inch.
  14. The method of claim 13, wherein an accuracy of the measured gap between the sensor wafer and the showerhead is at least +/−0.0005 inches.
  15. The method of claim 12, wherein the sensor wafer comprises a plurality of first conductive pads and a plurality of second conductive pads.
  16. The method of claim 15, wherein the gap between the showerhead and the sensor wafer is measured in a plurality of locations to provide a parallelism measurement.
  17. A sensor wafer, comprising: a substrate, wherein the substrate comprises a first surface and a second surface opposite the first surface; a plurality of first conductive pads with a first surface area, wherein the first conductive pads have surfaces that are substantially coplanar with the first surface of the substrate; a plurality of second conductive pads with a second surface area that is smaller than the first surface area, wherein the second conductive pads have surfaces that are substantially coplanar with the first surface of the substrate, wherein the first conductive pads and second conductive pads are arranged radially around the substrate in an alternating pattern, and wherein outer edges of the first conductive pads and outer edges of the second conductive pads are equidistant from an edge of the substrate; and a control module embedded in the substrate, wherein the control module comprises circuitry for sensing a distance between the first surface of the substrate and a surface external to the sensor wafer opposing the first surface using the first conductive pads and the second conductive pads.
  18. The sensor wafer of claim 17, wherein the circuitry provides an output phase of the first conductive pads that is 180 degrees offset from an output phase of the second conductive pads.
  19. The sensor wafer of claim 17, wherein the distance between the first surface of the substrate and a surface external to the sensor wafer is up to 1.5 inches.

Description

Embodiments relate to the field of semiconductor manufacturing and, in particular, to methods and apparatuses for measuring gaps in semiconductor manufacturing environments with a capacitive sensor system.

In semiconductor manufacturing, process uniformity over an entire substrate is critical to provide high yields. In plasma processes the relationship of the electrode (e.g., a showerhead or gas distribution pad) opposing the substrate needs to have highly accurate spacing and parallelism. Typically, the gap distance between the substrate and the electrode is greater than 1 inch.

However, currently available measurement tools, such as capacitive sensors, have a maximum range that is only between approximately 0.25 inches and 0.75 inches. As such, additional hardware must be used to bring the sensors closer to the electrode. The use of additional hardware prevents the sensors from being able to be removed from the processing chamber without also needing to vent the chamber after the calibration is completed. Accordingly, equipment down-time for calibration is increased. Additionally, the calibration may not be as accurate since the chamber needs to be vented and pumped back down after removal of the calibration equipment.

Embodiments disclosed herein include a sensor wafer. In an embodiment, the sensor wafer comprises a substrate, wherein the substrate comprises a first surface and a second surface opposite the first surface.

Citations (31)

  • US6499367B1
  • US20030227624A1
  • US20070046284A1
  • EP1669808A2
  • US20070222462A1
  • US20080231291A1
  • US7804306B2
  • US20130029433A1
  • US7778793B2
  • US20080246493A1
  • US20090001616A1
  • JP4956328B2
  • US20110074341A1
  • US20110193573A1
  • US20180114681A1
  • US20160220172A1
  • US20120304928A1
  • US20180240694A1
  • US20150369583A1
  • US20160141154A1
  • US20160211166A1
  • JP2017003557A
  • US20160363433A1
  • US9903739B2
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  • US20180218998A1
  • KR20170014384A
  • US20170131217A1
  • JP2017228754A
  • KR101841607B1
  • US20200058611A1
Record as JSON
{
  "publication_number": "US10794681B2",
  "country": "US",
  "kind": "B2",
  "title": "Long range capacitive gap measurement in a wafer form sensor system",
  "abstract": "Embodiments disclosed herein include a sensor wafer. In an embodiment, the sensor wafer comprises a substrate, wherein the substrate comprises a first surface and a second surface opposite the first surface. In an embodiment, the sensor wafer further comprises a first conductive pad with a first surface area, wherein the first conductive pad has a surface that is substantially coplanar with the first surface of the substrate. In an embodiment, the sensor wafer further comprises a second conductive pad with a second surface area that is smaller than the first surface area, wherein the second conductive pad has a surface that is substantially coplanar with the first surface of the substrate.",
  "claims": [
    "1. A sensor wafer, comprising: a substrate, wherein the substrate comprises a first surface and a second surface opposite the first surface; a first conductive pad with a first surface area, wherein the first conductive pad has a surface that is substantially coplanar with the first surface of the substrate, and wherein an edge of the first conductive pad that faces an edge of the substrate has a curvature that matches a curvature of the substrate; and a second conductive pad with a second surface area that is smaller than the first surface area, wherein the second conductive pad has a surface that is substantially coplanar with the first surface of the substrate, and wherein an edge of the second conductive pad that faces an edge of the substrate has a curvature that matches the curvature of the substrate.",
    "2. The sensor wafer of claim 1, wherein the second surface area is at least 5% smaller than the first surface area.",
    "3. The sensor wafer of claim 1, further comprising: a plurality of first conductive pads; and a plurality of second conductive pads.",
    "4. The sensor wafer of claim 3, wherein the first conductive pads and the second conductive pads are arranged in an alternating pattern around a perimeter of the substrate.",
    "5. The sensor wafer of claim 1, further comprising: an electric field guard around the perimeters of the first conductive pad and the second conductive pad.",
    "6. The sensor wafer of claim 1, wherein a shortest distance between an edge of the first conductive pad or an edge of the second conductive pad and an edge of the substrate is at least 1 inch.",
    "7. The sensor wafer of claim 1, further comprising: a control module embedded in the substrate, wherein the control module comprises circuitry for sensing a distance between the first surface of the substrate and a surface external to the sensor wafer opposing the first surface using the first conductive pad and the second conductive pad.",
    "8. The sensor wafer of claim 7, wherein the circuitry provides an output phase of the first conductive pad that is 180 degrees offset from an output phase of the second conductive pad.",
    "9. The sensor wafer of claim 7, wherein the distance between the first surface of the substrate and a surface external to the sensor wafer is up to 1.5 inches.",
    "10. The sensor wafer of claim 9, wherein an accuracy of the measured distance is at least +/−0.0005 inches.",
    "11. The sensor wafer of claim 7, wherein the control module further comprises a wireless communication module, wherein the wireless communication module transmits measurement data to an external device.",
    "12. A method for measuring a gap between a showerhead and a support surface in a processing chamber, comprising: pumping down a processing chamber, wherein the processing chamber comprises a support surface and a showerhead opposing the support surface; placing a sensor wafer on the support surface, wherein the sensor wafer comprises a first conductive pad with a first surface area and a second conductive pad with a second surface area that is smaller than the first surface area; measuring a gap between the sensor wafer and the showerhead with the first conductive pad and the second conductive pad, wherein measuring the gap comprises providing an output phase to the first conductive pad that is 180 degrees offset from an output phase of the second conductive pad; and removing the sensor wafer from the processing chamber without venting the processing chamber.",
    "13. The method of claim 12, wherein the gap between the sensor wafer and the showerhead is greater than 1 inch.",
    "14. The method of claim 13, wherein an accuracy of the measured gap between the sensor wafer and the showerhead is at least +/−0.0005 inches.",
    "15. The method of claim 12, wherein the sensor wafer comprises a plurality of first conductive pads and a plurality of second conductive pads.",
    "16. The method of claim 15, wherein the gap between the showerhead and the sensor wafer is measured in a plurality of locations to provide a parallelism measurement.",
    "17. A sensor wafer, comprising: a substrate, wherein the substrate comprises a first surface and a second surface opposite the first surface; a plurality of first conductive pads with a first surface area, wherein the first conductive pads have surfaces that are substantially coplanar with the first surface of the substrate; a plurality of second conductive pads with a second surface area that is smaller than the first surface area, wherein the second conductive pads have surfaces that are substantially coplanar with the first surface of the substrate, wherein the first conductive pads and second conductive pads are arranged radially around the substrate in an alternating pattern, and wherein outer edges of the first conductive pads and outer edges of the second conductive pads are equidistant from an edge of the substrate; and a control module embedded in the substrate, wherein the control module comprises circuitry for sensing a distance between the first surface of the substrate and a surface external to the sensor wafer opposing the first surface using the first conductive pads and the second conductive pads.",
    "18. The sensor wafer of claim 17, wherein the circuitry provides an output phase of the first conductive pads that is 180 degrees offset from an output phase of the second conductive pads.",
    "19. The sensor wafer of claim 17, wherein the distance between the first surface of the substrate and a surface external to the sensor wafer is up to 1.5 inches."
  ],
  "description_excerpt": "Embodiments relate to the field of semiconductor manufacturing and, in particular, to methods and apparatuses for measuring gaps in semiconductor manufacturing environments with a capacitive sensor system.\n\nIn semiconductor manufacturing, process uniformity over an entire substrate is critical to provide high yields. In plasma processes the relationship of the electrode (e.g., a showerhead or gas distribution pad) opposing the substrate needs to have highly accurate spacing and parallelism. Typically, the gap distance between the substrate and the electrode is greater than 1 inch.\n\nHowever, currently available measurement tools, such as capacitive sensors, have a maximum range that is only between approximately 0.25 inches and 0.75 inches. As such, additional hardware must be used to bring the sensors closer to the electrode. The use of additional hardware prevents the sensors from being able to be removed from the processing chamber without also needing to vent the chamber after the calibration is completed. Accordingly, equipment down-time for calibration is increased. Additionally, the calibration may not be as accurate since the chamber needs to be vented and pumped back down after removal of the calibration equipment.\n\nEmbodiments disclosed herein include a sensor wafer. In an embodiment, the sensor wafer comprises a substrate, wherein the substrate comprises a first surface and a second surface opposite the first surface.",
  "cpc": [
    "G01B 7/14",
    "B65H 2220/03",
    "B65H 2511/13",
    "B65H 2511/16",
    "B65H 2511/162",
    "B65H 2515/70",
    "B65H 2515/712",
    "G01B 7/003",
    "G01B 7/023",
    "G01B 7/08",
    "G01B 7/087",
    "H01J 2237/2446",
    "H01J 2237/24578",
    "H01J 37/32807",
    "H01J 37/32935",
    "H10P 72/06",
    "H10P 74/203",
    "H10P 74/238",
    "H10P 74/277"
  ],
  "ipc": [
    "G01B 7/14",
    "H01J 37/32",
    "H10P 14/60",
    "H10P 72/00",
    "G01B 7/00",
    "G01B 7/02",
    "G01B 7/06",
    "G01R 27/26"
  ],
  "assignees": [
    "Applied Materials Inc"
  ],
  "inventors": [
    "Charles G. Potter",
    "Eli Mor"
  ],
  "filing_date": "2018-09-04",
  "publication_date": "2020-10-06",
  "grant_date": "2020-10-06",
  "priority_date": "2018-09-04",
  "application_number": "US-201816121191-A",
  "family_id": "69639701",
  "cited_by_count": 8,
  "citations": [
    "US6499367B1",
    "US20030227624A1",
    "US20070046284A1",
    "EP1669808A2",
    "US20070222462A1",
    "US20080231291A1",
    "US7804306B2",
    "US20130029433A1",
    "US7778793B2",
    "US20080246493A1",
    "US20090001616A1",
    "JP4956328B2",
    "US20110074341A1",
    "US20110193573A1",
    "US20180114681A1",
    "US20160220172A1",
    "US20120304928A1",
    "US20180240694A1",
    "US20150369583A1",
    "US20160141154A1",
    "US20160211166A1",
    "JP2017003557A",
    "US20160363433A1",
    "US9903739B2",
    "US20170012021A1",
    "US20180218998A1",
    "KR20170014384A",
    "US20170131217A1",
    "JP2017228754A",
    "KR101841607B1",
    "US20200058611A1"
  ]
}

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