Laser irradiation apparatus, laser irradiation method, and method of manufacturing semiconductor device

{
  "publication_number": "US11446762B2",
  "country": "US",
  "kind": "B2",
  "title": "Laser irradiation apparatus, laser irradiation method, and method of manufacturing semiconductor device",
  "abstract": "A laser irradiation apparatus (1) according to one embodiment irradiates a workpiece (16) with a laser beam (15) while conveying the workpiece (16) caused to float with the use of a flotation unit (10). The flotation unit (10) includes precision float regions (11 a, 11 b) and rough float regions (13 a to 13 j). The precision float regions (11 a, 11 b) are configured to cause the workpiece (16) to float by utilizing ejection and suction of a gas, and the rough float regions are configured to cause the workpiece (16) to float by utilizing ejection of a gas without suction of a gas.",
  "claims": [
    "1. A laser irradiation apparatus, comprising: a laser generating device configured to generate a laser beam; and a flotation unit configured to cause a workpiece to float, the workpiece being to be irradiated with the laser beam, wherein the flotation unit includes a first region and a second region, the first region and the second region are disposed so that, as viewed in a plan view, a focal point of the laser beam is superposed on the first region and the focal point of the laser beam is not superposed on the second region, the first region is configured to cause the workpiece to float by utilizing ejection and suction of a gas, and the second region is configured to cause the workpiece to float by utilizing ejection of a gas without suction of a gas, a flatness of a surface of the first region that opposes the workpiece is smaller than a flatness of a surface of the second region that opposes the workpiece.",
    "2. The laser irradiation apparatus according to claim 1, wherein the flotation unit further includes a third region disposed between the first region and the second region, the third region is configured to cause the workpiece to float by utilizing ejection and suction of a gas, and the first region and the third region are configured to allow the gas in the first region and the gas in the third region to be controlled independently from each other in the first region and the third region.",
    "3. The laser irradiation apparatus according to claim 2, wherein the first region includes a first gas ejecting unit configured to cause the workpiece to float by ejecting a gas upward; and a plurality of first intake pores configured to suck in a gas present between the workpiece and the first region.",
    "4. The laser irradiation apparatus according to claim 3, wherein the first gas ejecting unit is constituted by a porous member, and the plurality of first intake pores are disposed evenly in a surface of the porous member that opposes the workpiece.",
    "5. The laser irradiation apparatus according to claim 3, wherein the third region includes a second gas ejecting unit configured to cause the workpiece to float by ejecting a gas upward; and a plurality of second intake pores configured to suck in a gas present between the workpiece and the third region.",
    "6. The laser irradiation apparatus according to claim 5, wherein the second gas ejecting unit is constituted by a porous member, and the plurality of second intake pores are disposed in a surface of the porous member that opposes the workpiece, the plurality of second intake pores being disposed more densely on the first region side than on the second region side.",
    "7. The laser irradiation apparatus according to claim 5, wherein the second region includes a third gas ejecting unit configured to cause the workpiece to float by ejecting a gas upward.",
    "8. The laser irradiation apparatus according to claim 5, wherein an amount of a gas fed to the first gas ejecting unit and an amount of a gas fed to the second gas ejecting unit can be controlled independently from each other, and an amount of a gas sucked in through the first intake pores and an amount of a gas sucked in through the second intake pores can be controlled independently from each other.",
    "9. The laser irradiation apparatus according to claim 1, wherein disposed in the first region are a lower unit disposed below a conveyance path of the workpiece, the lower unit including a gas ejecting unit and a plurality of intake pores, the gas ejecting unit being configured to cause the workpiece to float by ejecting a gas upward, the plurality of intake pores being configured to suck in a gas present between the workpiece and the lower unit; and an upper unit disposed above the conveyance path of the workpiece, the upper unit being configured to blow a gas against an upper surface of the workpiece.",
    "10. The laser irradiation apparatus according to claim 9, wherein a space is formed in the upper unit, the space allowing the laser beam to pass therethrough, and a sealing gas is fed through the space onto an irradiation region of the laser beam on the workpiece.",
    "11. A laser irradiation apparatus, comprising: a laser generating device configured to generate a laser beam; and a flotation unit configured to cause a workpiece to float, the workpiece being to be irradiated with the laser beam, wherein the flotation unit includes a first region and a second region, the first region and the second region are disposed so that, as viewed in a plan view, a focal point of the laser beam is superposed on the first region and the focal point of the laser beam is not superposed on the second region, the first region is configured to cause the workpiece to float by utilizing ejection and suction of a gas, and the second region is configured to cause the workpiece to float by utilizing ejection of a gas, and a flatness of a surface of the first region that opposes the workpiece is smaller than a flatness of a surface of the second region that opposes the workpiece.",
    "12. The laser irradiation apparatus according to claim 11, wherein the flotation unit further includes a third region disposed between the first region and the second region, the third region is configured to cause the workpiece to float by utilizing ejection and suction of a gas, and a flatness of a surface of the third region that opposes the workpiece is larger than the flatness of the surface of the first region that opposes the workpiece and is smaller than the flatness of the surface of the second region that opposes the workpiece.",
    "13. A laser irradiation apparatus, comprising: a laser generating device configured to generate a laser beam; and a flotation unit configured to cause a workpiece to float, the workpiece being to be irradiated with the laser beam, wherein the flotation unit includes a first region and a second region, the first region and the second region are disposed so that, as viewed in a plan view, a focal point of the laser beam is superposed on the first region and the focal point of the laser beam is not superposed on the second region, the first region is configured to cause the workpiece to float by utilizing ejection and suction of a gas, and the second region is configured to cause the workpiece to float by utilizing ejection of a gas, a flatness of a surface of the first region that opposes the workpiece is smaller than a flatness of a surface of the second region that opposes the workpiece, and a deflection amount of the workpiece held when the workpiece passes through the first region is smaller than the deflection amount of the workpiece held when the workpiece passes through the second region.",
    "14. The laser irradiation apparatus according to claim 13, wherein the flotation unit further includes a third region disposed between the first region and the second region, the third region is configured to cause the workpiece to float by utilizing ejection and suction of a gas, and the flotation unit in the third region conveys the workpiece so that the deflection amount of the workpiece changes smoothly while the workpiece is conveyed from the second region to the first region.",
    "15. A laser irradiation method of irradiating a workpiece with a laser beam while the workpiece is being made to float with the use of a flotation unit, wherein the flotation unit includes a first region and a second region, the first region being superposed on a focal point of the laser beam as viewed in a plan view, the second region not being superposed on the focal point of the laser beam as viewed in a plan view, a flatness of a surface of the first region that opposes the workpiece is smaller than a flatness of a surface of the second region that opposes the workpiece, and when the workpiece is conveyed with the use of the flotation unit, the first region conveys the workpiece while causing the workpiece to float by utilizing ejection and suction of a gas, and the second region conveys the workpiece while causing the workpiece to float by utilizing ejection of a gas without suction of a gas.",
    "16. A method of manufacturing a semiconductor device, the method comprising steps of: (a) forming an amorphous film over a substrate; and (b) irradiating the amorphous film with a laser beam to crystalize the amorphous film, wherein the step of (b) is a step of irradiating the amorphous film with the laser beam while conveying the substrate caused to float with the use of a flotation unit, the flotation unit includes a first region and a second region, the first region being superposed on a focal point of the laser beam as viewed in a plan view, the second region not being superposed on the focal point of the laser beam as viewed in a plan view, a flatness of a surface of the first region that opposes the substrate is smaller than a flatness of a surface of the second region that opposes the substrate, and when the substrate is conveyed with the use of the flotation unit, the first region conveys the substrate while causing the substrate to float by utilizing ejection and suction of a gas, and the second region conveys the substrate while causing the substrate to float by utilizing ejection of a gas without suction of a gas.",
    "17. A laser irradiation method of irradiating a workpiece with a laser beam while the workpiece is being made to float with the use of a flotation unit, wherein the flotation unit includes a first region and a second region, the first region being superposed on a focal point of the laser beam as viewed in a plan view, the second region not being superposed on the focal point of the laser beam as viewed in a plan view, a flatness of a surface of the first region that opposes the workpiece is smaller than a flatness of a surface of the second region that opposes the workpiece, when the workpiece is conveyed with the use of the flotation unit, the first region conveys the workpiece while causing the workpiece to float by utilizing ejection and suction of a gas, and the second region conveys the workpiece while causing the workpiece to float by utilizing ejection of a gas, and a deflection amount of the workpiece held when the workpiece passes through the first region is smaller than the deflection amount of the workpiece held when the workpiece passes through the second region.",
    "18. A method of manufacturing a semiconductor device, the method comprising steps of: (a) forming an amorphous film over a substrate; and (b) irradiating the amorphous film with a laser beam to crystalize the amorphous film, wherein the step of (b) is a step of irradiating the amorphous film with the laser beam while conveying the substrate caused to float with the use of a flotation unit, the flotation unit includes a first region and a second region, the first region being superposed on a focal point of the laser beam as viewed in a plan view, the second region not being superposed on the focal point of the laser beam as viewed in a plan view, a flatness of a surface of the first region that opposes the substrate is smaller than a flatness of a surface of the second region that opposes the substrate, when the substrate is conveyed with the use of the flotation unit, the first region conveys the substrate while causing the substrate to float by utilizing ejection and suction of a gas, the second region conveys the workpiece while causing the workpiece to float by utilizing ejection of a gas, and a deflection amount of the workpiece held when the workpiece passes through the first region is smaller than the deflection amount of the workpiece held when the workpiece passes through the second region.",
    "19. The laser irradiation apparatus according to claim 2, wherein disposed in the first region are a lower unit disposed below a conveyance path of the workpiece, the lower unit including a gas ejecting unit and a plurality of intake pores, the gas ejecting unit being configured to cause the workpiece to float by ejecting a gas upward, the plurality of intake pores being configured to suck in a gas present between the workpiece and the lower unit; and an upper unit disposed above the conveyance path of the workpiece, the upper unit being configured to blow a gas against an upper surface of the workpiece.",
    "20. The laser irradiation apparatus according to claim 19, wherein a space is formed in the upper unit, the space allowing the laser beam to pass therethrough, and a sealing gas is fed through the space onto an irradiation region of the laser beam on the workpiece."
  ],
  "description_excerpt": "The present invention relates to laser irradiation apparatuses, laser irradiation methods, and methods of manufacturing semiconductor devices. For example, the present invention relates to a laser irradiation apparatus provided with a flotation unit that conveys a workpiece while causing the workpiece to float, a laser irradiation method, and a method of manufacturing a semiconductor device.\n\nA laser annealing apparatus that irradiates an amorphous film formed on a silicon substrate, a glass substrate, or the like with a laser beam to crystallize the amorphous film is known. Patent Literature 1 discloses a laser annealing apparatus that irradiates a substrate with a laser beam while conveying the substrate caused to float with the use of a gas floating device.\n\nPatent Literature 1: Japanese Unexamined Patent Application Publication No. 2002-280321\n\nIn a laser annealing apparatus that conveys a workpiece with the workpiece caused to float by blowing a gas against the substrate, as in the laser annealing apparatus disclosed in Patent Literature 1, if the gas blown against the workpiece becomes uneven, the deflection amount of the workpiece increases during conveyance, which leads to a problem in that the workpiece goes out of the depth of focus (DOF) of the laser beam.\n\nOther issues and novel features will become apparent from the descriptions in the present specification and the appended drawings.\n\nA laser irradiation apparatus according to one embodiment includes a flotation unit provided with a first region and a second region.",
  "cpc": [
    "B23K 26/10",
    "B23K 2101/18",
    "B23K 2101/40",
    "B23K 2103/172",
    "B23K 2103/50",
    "B23K 26/0738",
    "B23K 26/0838",
    "B23K 26/38",
    "B23K 26/702",
    "B23K 37/0408",
    "B65G 51/03",
    "H01L 21/20",
    "H01L 21/268",
    "H01L 21/67115",
    "H01L 21/6776",
    "H01L 21/67784",
    "H01L 21/683",
    "H10P 14/20",
    "H10P 34/42",
    "H10P 72/0402",
    "H10P 72/0428",
    "H10P 72/0431",
    "H10P 72/0436",
    "H10P 72/3208",
    "H10P 72/3302",
    "H10P 72/3314",
    "H10P 72/36",
    "H10P 72/70",
    "H10P 72/7612"
  ],
  "ipc": [
    "B23K 101/18",
    "B23K 101/40",
    "B23K 103/00",
    "B23K 103/16",
    "B23K 26/073",
    "B23K 26/08",
    "B23K 26/10",
    "B23K 26/70",
    "B23K 37/04",
    "B65G 51/03",
    "H01L 21/20",
    "H01L 21/268",
    "H01L 21/67",
    "H01L 21/677",
    "H01L 21/683"
  ],
  "assignees": [
    "JSW Aktina System Co Ltd"
  ],
  "inventors": [
    "Takahiro Fuji",
    "Yuki Suzuki",
    "Takahiro Mikami",
    "Yoshihiro Yamaguchi"
  ],
  "filing_date": "2017-06-02",
  "publication_date": "2022-09-20",
  "grant_date": "2022-09-20",
  "priority_date": "2016-08-29",
  "application_number": "US-201716323323-A",
  "family_id": "61301752",
  "cited_by_count": 1,
  "citations": [
    "JP2002231654A",
    "JP2002280321A",
    "US20040106242A1",
    "JP2004179653A",
    "US20070241086A1",
    "US20070017442A1",
    "JP2007027495A",
    "US20090181552A1",
    "JP2009194370A",
    "JP2010225602A"
  ]
}