Method for forming film with low dielectric constant on semiconductor substrate

{
  "publication_number": "US6410463B1",
  "country": "US",
  "kind": "B1",
  "title": "Method for forming film with low dielectric constant on semiconductor substrate",
  "abstract": "In a method for forming in a reactor a film having a low relative dielectric constant on a semiconductor substrate by plasma reaction, the improvement can be achieved by lengthening a residence time, Rt, of a reaction gas in the reactor, wherein 100 msec<=Rt. The film includes insulation films and mask films.",
  "claims": [
    "1. In a method for forming in a reactor a film having a low relative dielectric constant on a semiconductor substrate by plasma reaction, wherein the improvement comprises reducing a relative dielectric constant of the film by lengthening a residence time, Rt, of the reaction gas in the reactor, wherein 100 msec≦Rt, Rt[s]= 9.42×10 7 (Pr·Ts/Ps·Tr) r w 2 d/F wherein: Pr: reaction chamber pressure (Pa) Ps: standard atmospheric pressure (Pa) Tr: average temperature of the reaction gas (K) Ts: standard temperature (K) r w: radius of the silicon substrate (m) d: space between the silicon substrate and the upper electrode (m) F: total flow volume of the reaction gas (sccm).",
    "2. The method according to claim 1, wherein Rt is lengthened by (i) reducing a flow of the reaction gas, (ii) enlarging the reaction space, or (iii) increasing the reaction pressure.",
    "3. The method according to claim 1, wherein the reaction gas comprises at least one selected from the group consisting of Si(CH 3) n H 4−n (n=1-4), Si 2 (CH 3) n H 6−n (n=1-6), C 5 F 5, C 6 F n (n=6-12), C n F 2n+2 (n>1), CH n F 4−n (n=1-4), Si x F 2x+2 (x=1-4), SiH n F 4−n (n=1-4), Si n H 2n+2 (n=1-3), Si(OC n H 2n+1) 4 (n=1-2), and SiF(OC n H 2n+1) 3 (n=1-2), thereby forming a low-k insulation film.",
    "4. The method according to claim 1, wherein the reaction gas comprises at least one selected from the group consisting of Si α O α−1 R 2α−β+2 (OC n H 2n−1) β, wherein R is a hydrocarbon, α and β are an integer, including Si α (CH 3) 2 (OCH 3) 2, in combination with at least one selected from the group consisting of C 5 F 5, C 6 F n (n=6-12), C n F 2n+2 (n≧1), CH n F 4−n (n=1-4), Si x F 2x+2 (x=1-4), and SiH n F 4−n (n=1-4), thereby forming a low-k insulation film.",
    "5. The method according to claim 1, wherein the reaction gas comprises at least one compound selected from the group consisting of Si(CH 3) n H 4−n (n=1-4), Si 2 (CH 3) n H 6−n (n=1-6), (CH 3) 3 SiNHSi(CH 3) 3, and (CH 3) 3 SiNCH 3 Si(CH 3) 3, thereby forming a low-k hard mask film including a SiC, SiCH, SiNC, or SiNCH film.",
    "6. A method for reducing a relative dielectric constant of an insulation film formed on a semiconductor substrate by plasma reaction, wherein an insulation film comprising: introducing a reaction gas into a reactor wherein a semiconductor substrate is placed; activating plasma reaction in the reactor; lengthening a residence time, Rt, of the reaction gas in the reactor, wherein 100 msec≦Rt, Rt[s]= 9.42×10 7 (Pr·Ts/Ps·Tr) r w 2 d/F wherein: Pr: reaction chamber pressure (Pa) Ps: standard atmospheric pressure (Pa) Tr: average temperature of the reaction gas (K) Ts: standard temperature (K) r w: radius of the silicon substrate (m) d: space between the silicon substrate and the upper electrode (m) F: total flow volume of the reaction gas (sccm).",
    "7. The method according to claim 6, wherein Rt is lengthened by (i) reducing a flow of the reaction gas, (ii) enlarging the reaction space, or (iii) increasing the reaction pressure.",
    "8. The method according to claim 6, wherein the reaction gas comprises at least one selected from the group consisting of Si(CH 3) n H 4−n (n=1-4), Si 2 (CH 3) n H 6−n (n=1-6), C 5 F 5, C 6 F n (n=6-12), C n F 2n+2 (n>1), CH n F 4−n (n=1-4), Si x F 2x+2 (x=1-4), SiH n F 4−n (n=1-4), Si n H 2n+2 (n=1-3), Si(OC n H 2n+1) 4 (n=1-2), and SiF(OC n H 2n+1) 3 (n=1-2), thereby forming a low-k insulation film.",
    "9. The method according to claim 6, wherein the reaction gas comprises at least one selected from the group consisting of Si α O α−1 R 2α−β+2 (OC n H 2n+1) β, wherein R is a hydrocarbon, α and β are an integer, including Si α (CH 3) 2 (OCH 3) 2, in combination with at least one selected from the group consisting of C 5 F 5, C 6 F n (n=6-12), C n F 2n+2 (n≧1), CH n F 4−n (n=1-4), Si x F 2x+2 (x=1-4), and SiH n F 4−n (n=1-4), thereby forming a low-k insulation film.",
    "10. The method according to claim 6, wherein the reaction gas comprises at least one compound selected from the group consisting of Si(CH 3) n H 4−n (n=1-4), Si 2 (CH 3) n H 6−n (n=1-6), (CH 3) 3 SiNHSi(CH 3) 3, and (CH 3) 3 SiNCH 3 Si(CH 3) 3, thereby forming a low-k hard mask film including a SiC, SiCH, SiNC, or SiNCH film."
  ],
  "cpc": [
    "C09D 4/00",
    "B05D 1/62",
    "C23C 16/30",
    "C23C 16/401",
    "H10P 14/6336",
    "H10P 14/6686",
    "H10P 14/6922",
    "H10W 74/476"
  ],
  "assignees": [
    "ASM JAPAN"
  ],
  "filing_date": "2000-10-18",
  "publication_date": "2002-06-25",
  "grant_date": "2002-06-25",
  "priority_date": "1998-02-05",
  "application_number": "US-69107900-A",
  "family_id": "46276408",
  "citations": [
    "EP0826791A2",
    "JPH10284486A",
    "US5314724A",
    "US5380555A",
    "US5433786A",
    "US5494712A",
    "US5554570A",
    "US5989998A",
    "US6051321A",
    "US6054379A",
    "US6068884A"
  ]
}