Sensor device and method for manufacturing the same

{
  "publication_number": "US10957731B1",
  "country": "US",
  "kind": "B1",
  "title": "Sensor device and method for manufacturing the same",
  "abstract": "A sensor device is provided. The sensor device includes at least one sensor unit. The sensor unit includes at least one sensor element, an interlayer, a passivation layer, a micro-lens structure, an opening, and a first reflecting layer. The interlayer is disposed on the sensor element. The passivation layer is disposed on the interlayer. The micro-lens structure is disposed on the passivation layer. The opening is disposed in the micro-lens structure. The first reflecting layer is disposed on the micro-lens structure. In addition, the first reflecting layer extends from the opening to the passivation layer.",
  "claims": [
    "1. A sensor device, comprising: at least one sensor unit, comprising: at least one sensor element; an interlayer disposed on the at least one sensor element; a passivation layer disposed on the interlayer; a micro-lens structure disposed on the passivation layer; an opening disposed in the micro-lens structure; and a first reflecting layer disposed on the micro-lens structure, wherein the first reflecting layer extends from the opening to the passivation layer, wherein the micro-lens structure is in contact with the passivation layer.",
    "2. The sensor device as claimed in claim 1, wherein the first reflecting layer extends from a sidewall of the opening to a top surface of the passivation layer.",
    "3. The sensor device as claimed in claim 1, wherein a material of the first reflecting layer has a property of high reflection for emission light.",
    "4. The sensor device as claimed in claim 1, wherein in a cross-sectional view, the micro-lens structure has a shape of a semi-circle, semi-ellipse, triangle, rectangle, or another shape that can reflect light toward the at least one sensor element.",
    "5. The sensor device as claimed in claim 1, wherein the micro-lens structure has a parallel light or a single focus point corresponding to one sensor element, two focus points corresponding to two sensor elements, or a plurality of focus points corresponding to three or four sensor elements.",
    "6. The sensor device as claimed in claim 1, wherein the at least one sensor unit further comprises a second reflecting layer disposed between the interlayer and the micro-lens structure.",
    "7. The sensor device as claimed in claim 6, wherein the opening overlaps the second reflecting layer.",
    "8. The sensor device as claimed in claim 6, wherein a material of the second reflecting layer has a property of high reflection for excitation light.",
    "9. The sensor device as claimed in claim 6, wherein the at least one sensor unit further comprises a waveguide structure disposed above the second reflecting layer.",
    "10. The sensor device as claimed in claim 9, wherein the opening overlaps the waveguide structure.",
    "11. The sensor device as claimed in claim 1, wherein the interlayer comprises a filter, a passivation material, a metal layer, or a combination thereof.",
    "12. The sensor device as claimed in claim 11, wherein the filter is surrounded by the metal layer.",
    "13. The sensor device as claimed in claim 11, wherein the filter comprises a uniform filter, a pixelated filter, a rejection filter, or a combination thereof.",
    "14. The sensor device as claimed in claim 1, wherein the opening comprises a reaction region, and the reaction region corresponds to at least one sensor element.",
    "15. The sensor device as claimed in claim 14, wherein the reaction region corresponds to one, two, three or four sensor elements.",
    "16. A method for manufacturing a sensor device, comprising: providing a substrate comprising at least one sensor element; forming an interlayer on the at least one sensor element; forming a passivation layer on the interlayer; forming a micro-lens structure on the passivation layer; conformally forming a first reflecting layer on the micro-lens structure; and removing a portion of the first reflecting layer and a portion of the micro-lens structure, and forming an opening in the micro-lens structure, wherein the first reflecting layer extends from the opening to the passivation layer, and the micro-lens structure is in contact with the passivation layer after the opening is formed.",
    "17. The method for manufacturing a sensor device as claimed in claim 16, further comprising forming a second reflecting layer on the interlayer before forming the passivation layer.",
    "18. The method for manufacturing a sensor device as claimed in claim 17, further comprising forming a waveguide structure on the passivation layer before forming the micro-lens structure.",
    "19. The method for manufacturing a sensor device as claimed in claim 17, further comprising patterning the second reflecting layer to form an aperture.",
    "20. The method for manufacturing a sensor device as claimed in claim 16, further comprising forming a planarization layer on the first reflecting layer."
  ],
  "description_excerpt": "The present disclosure relates to a sensor device and a method for manufacturing the sensor device, and in particular, it relates to an optical sensor device that may improve light collection efficiency for bio-sensing.\n\nComplementary metal-oxide-semiconductor (CMOS) image sensors have been widely used in electronic devices, including digital cameras, medical imaging equipment, spectrometers, radar devices, and so on. CMOS image sensors usually include integrated circuits and photodiodes and therefore they may capture light and convert it into electrical signals.\n\nRecently, CMOS image sensors also have been used for biological or chemical analysis. For such analysis, a biological or biochemical sample may be placed on a photodiode, and light emitted by the biological or biochemical sample may be directed to the photodiode. The fluorescence or chemiluminescence of the sample may be detected by the photodiode, and spectrum distribution and intensity of the fluorescence or chemiluminescence may be determined. The spectrum and intensity may be used to identify the interaction or properties of the biological or biochemical sample.\n\nAlthough existing CMOS image sensors have been adequate for their intended purposes, they have not been entirely satisfactory in all respects. For example, the emission light collection efficiency of a biological reaction to the photodiode is low (e.g., lower than 50%) since the light emitted in the opposite direction from the photodiode may not be detected. Therefore, there are still some problems with CMOS image sensors that remain to be solved.",
  "cpc": [
    "H10F 39/8067",
    "G01N 2021/6478",
    "G01N 21/253",
    "G01N 21/6454",
    "G01N 21/6486",
    "G01N 21/76",
    "H01L 27/14621",
    "H01L 27/14627",
    "H01L 27/14629",
    "H01L 27/14645",
    "H01L 27/14689",
    "H10F 39/014",
    "H10F 39/024",
    "H10F 39/026",
    "H10F 39/182",
    "H10F 39/8023",
    "H10F 39/8053",
    "H10F 39/8063",
    "H10F 39/809"
  ],
  "ipc": [
    "G01N 21/64",
    "H01L 27/146"
  ],
  "assignees": [
    "VisEra Technologies Co Ltd"
  ],
  "inventors": [
    "Hsin-Yi Hsieh"
  ],
  "filing_date": "2019-10-04",
  "publication_date": "2021-03-23",
  "grant_date": "2021-03-23",
  "priority_date": "2019-10-04",
  "application_number": "US-201916593417-A",
  "family_id": "68731764",
  "cited_by_count": 4,
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}