Optoelectronic semiconductor device

{
  "publication_number": "US2015028361A1",
  "country": "US",
  "kind": "A1",
  "title": "Optoelectronic semiconductor device",
  "abstract": "An optoelectronic semiconductor device includes at least one radiation-emitting and/or radiation-receiving semiconductor chip including a radiation passage surface and a mounting surface opposite the radiation passage surface, wherein the mounting surface includes a first electrical contact structure and a second electrical contact structure electrically insulated from the first electrical contact structure, and wherein the radiation passage surface is free of contact structures, a reflective sheath surrounding the at least one semiconductor chip at least in sections, and a protective sheath surrounding the at least one semiconductor chip and/or the reflective sheath at least in sections.",
  "claims": [
    "1. An optoelectronic semiconductor device, comprising: at least one radiation-emitting and/or radiation-receiving semiconductor chip comprising a radiation passage surface and a mounting surface opposite the radiation passage surface, wherein the mounting surface comprises a first electrical contact structure and a second electrical contact structure electrically insulated from the first electrical contact structure, and wherein the radiation passage surface is free of contact structures, a reflective sheath surrounding the at least one semiconductor chip at least in sections, and a protective sheath surrounding the at least one semiconductor chip and/or the reflective sheath at least in sections. 2. The semiconductor device according to claim 1, wherein the semiconductor chip is a volume emitter and the semiconductor device is, by virtue of the reflective sheath, a surface emitter. 3. The semiconductor device according to claim 1, wherein at the mounting surface a region between the first electrical contact structure and the second electrical contact structure is free of material of the reflective sheath. 4. The semiconductor device according to claim 1, wherein the reflective sheath contains light-scattering and/or light-reflecting particles. 5. The semiconductor device according to claim 4, wherein the light-scattering and/or light-reflecting particles are TiO 2 particles, BaSO 4 particles, ZnO particles, Al x O y particles and/or ZrO 2 particles. 6. The semiconductor device according to claim 1, wherein the reflective sheath comprises a silicone filled with light-scattering and/or light-reflecting particles. 7. The semiconductor device according to claim 1 wherein the reflective sheath is formed by a casting compound. 8. The semiconductor device according to claim, wherein at least one surface of the reflective sheath remote from the semiconductor chip is curved. 9. The semiconductor device according to claim 1, wherein the protective sheath is formed by a casting compound and the reflective sheath is embedded into the casting compound. 10. The semiconductor device according to claim 1, wherein the protective sheath is transparent to the radiation emitted by the semiconductor chip. 11. The semiconductor device according to claim 1, further comprising a conversion element disposed on the radiation passage surface of the semiconductor chip that converts the radiation emitted by the semiconductor chip, at least partially into radiation of a different wavelength. 12. The semiconductor device according to claim 11, wherein the conversion element is not covered by the reflective sheath. 13. The semiconductor device according to claim 1, wherein the semiconductor chip and the reflective sheath are arranged on a carrier substrate and the reflective sheath extends from the carrier substrate to the semiconductor chip, wherein the reflective sheath extends at the most to an upper chip edge. 14. The semiconductor device according to claim 13, further comprising a border surrounding the semiconductor chip, wherein the reflective sheath is delimited by the circumferential border. 15. The semiconductor device according to claim 1, wherein in the radiation direction an optical element is disposed downstream of the semiconductor chip. 16. An optoelectronic semiconductor device comprising: at least one radiation-emitting and/or radiation-receiving semiconductor chip comprising a radiation passage surface and a mounting surface opposite the radiation passage surface, wherein the mounting surface comprises a first electrical contact structure and a second electrical contact structure electrically insulated from the first electrical contact structure, and wherein the radiation passage surface is free of contact structures, a reflective sheath surrounding the at least one semiconductor chip at least in sections, and a protective sheath surrounding the at least one semiconductor chip and/or the reflective sheath at least in sections, wherein a conversion element is disposed on the radiation passage surface of the semiconductor chip which converts the radiation, is emitted by the semiconductor chip, at least partially into radiation of a different wavelength, the conversion element not being covered by the reflective sheath."
  ],
  "description_excerpt": "This disclosure relates to an optoelectronic device comprising a semiconductor chip and a reflective sheath, as well as an arrangement having a plurality of such semiconductor devices.\n\nEP 2 216 834 Al describes an optoelectronic semiconductor device.\n\nSome devices comprise a lead frame having a suitable plastic material injection-molded around it. The plastic material forms a basic housing comprising a cavity in which a semiconductor chip is arranged and electrically contacted. To increase the external efficiency in such devices, it is conventional to form the cavity with inclined inner surfaces so that they serve as a reflector. The semiconductor chip in the cavity mostly emits radiation directed forwardly, sidewardly and rearwardly. In those devices, in spite of the inclined cavity inner surfaces sideward- or rearward-emitted light of the semiconductor chip is absorbed at least partially by the basic housing, which means that the light portion disadvantageously does not contribute to the forward light current of the device.\n\nMoreover, in some devices, absorption losses of the radiation emitted by the semiconductor chip can occur on absorbing contact structures arranged, e.g., at a radiation passage side of the semiconductor chip. Moreover, by reason of the properties of the semiconductor chip as a volume emitter, efficient coupling of light into optical elements such as, e.g., into waveguides, cannot easily be accomplished using such devices.\n\nTo counteract those disadvantages at least in part, it is possible to use a housing material which is preferably reflective.",
  "cpc": [
    "H10F 55/20",
    "H01L 31/02325",
    "H01L 31/16",
    "H01L 33/60",
    "H10F 77/206",
    "H10F 77/407",
    "H10F 77/413",
    "H10H 20/841",
    "H10H 20/852",
    "H10H 20/854",
    "H10H 20/855",
    "H10H 20/856",
    "H10W 72/884"
  ],
  "ipc": [
    "H01L 31/0232",
    "H01L 31/16",
    "H01L 33/60",
    "H01L 31/0224",
    "H01L 31/12",
    "H01L 33/46",
    "H01L 33/52"
  ],
  "assignees": [
    "Osram Opto Semiconductors GmbH"
  ],
  "inventors": [
    "Thomas Schlereth",
    "Stephan Kaiser",
    "Alexander Linkov"
  ],
  "filing_date": "2013-02-08",
  "publication_date": "2015-01-29",
  "priority_date": "2012-02-10",
  "application_number": "US-201314376165-A",
  "family_id": "47681902",
  "cited_by_count": 13,
  "citations": [
    "US20030094691A1",
    "US20020185752A1",
    "US20120287628A1",
    "US20110248304A1",
    "WO2011147636A1",
    "US20130077280A1"
  ]
}