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Patent · US4584427A · A · US

Thin film solar cell with free tin on tin oxide transparent conductor

(11) Publication number
US4584427A
(21) Application number
US-66364884-A
(22) Filing date
1984-10-22
(30) Priority date
1984-10-22
(43) Publication date
1986-04-22
(45) Date of grant
1986-04-22
(52) CPC
  • H10F Inorganic semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation: 77/1692, 77/244
  • Y02E Reduction of greenhouse gas [ghg] emissions, related to energy generation, transmission or distribution: 10/50
(73) Assignee
ATLANTIC RICHFIELD CO
(54) Title
Thin film solar cell with free tin on tin oxide transparent conductor
(57) Abstract

A thin film solar cell structure having a free metal layer between a transparent conductor front face contact and the front face surface of the actual thin film photovoltaic device. The free metal, preferably tin, may be formed by glow discharge reduction of the transparent conductor surface or by direct deposition of free metal.

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Claims (13)

  1. A solar cell comprising: a transparent front face electrode comprising oxides of one or more metals, a layer of free metal on said front face electrode, said free metal layer comprising at least one of said one or more metals, said layer of free metal being substantially transparent to visible light, a thin film photovoltaic device on said free metal layer, and a back face electrode on said photovoltaic device.
  2. A solar cell according to claim 1 wherein said transparent front face electrode is supported on a transparent insulating substrate through which incident light may be received.
  3. A solar cell according to claim 1 wherein said transparent front face electrode comprises tin oxide.
  4. A solar cell according to claim 1 wherein said layer of free metal has a thickness of from 10 to 100 angstroms.
  5. In the method for manufacturing a thin film photovoltaic cell wherein a substrate having a transparent conductive layer of primarily tin oxide is positioned in a glow discharge chamber and semiconductor layers are deposited on said transparent conductive layer, the improvement comprising: before deposition of said semiconductor layers, treating said transparent conductive layer with a glow discharge atmosphere for a time sufficient to generate an essentially transparent layer of free tin on the surface of said transparent conductive layer.
  6. The improved method of claim 5 wherein said glow discharge atmosphere includes hydrogen gas.
  7. The improvement method of claim 5 wherein said glow discharge atmosphere includes only nonreactive gases.
  8. The improvement method of claim 7 wherein said glow discharge atmosphere comprises argon gas.
  9. In the method for manufacturing a thin film photovoltaic cell wherein a substrate having a transparent conductive layer of primarily tin oxide is positioned in a glow discharge chamber and semiconductor layers are deposited on said transparent conductive layer, the improvement comprising: after deposition of a first semiconductor layer, treating said substrate with a glow discharge including hydrogen gas for a time sufficient to generate an essentially transparent layer of free tin at the interface of said transparent conductive layer and said first semiconductor layer.
  10. A solar cell comprising: a transparent front face electrode comprising oxides of one or more metals, a layer of free metal on said front face electrode, said free metal layer formed by reduction of a portion of said front face electrode, said layer of free metal being substantially transparent to visible light, a thin film photovoltaic device on said free metal layer, and a back face electrode on said photovoltaic device.
  11. A solar cell according to claim 10 wherein said transparent front face electrode is supported on a transparent insulating substrate through which incident light may be received.
  12. A solar cell according to claim 10 wherein said transparent front face electrode comprises tin oxide.
  13. A solar cell according to claim 10 wherein said layer of free metal has a thickness of from 10 to 100 angstroms.

Citations (11)

  • EP0025872A2
  • JPS56114384A
  • JPS5878473A
  • JPS5892281A
  • US3941672A
  • US4330182A
  • US4330182B1
  • US4385200A
  • US4387387A
  • US4388482A
  • US4410559A
Record as JSON
{
  "publication_number": "US4584427A",
  "country": "US",
  "kind": "A",
  "title": "Thin film solar cell with free tin on tin oxide transparent conductor",
  "abstract": "A thin film solar cell structure having a free metal layer between a transparent conductor front face contact and the front face surface of the actual thin film photovoltaic device. The free metal, preferably tin, may be formed by glow discharge reduction of the transparent conductor surface or by direct deposition of free metal.",
  "claims": [
    "1. A solar cell comprising: a transparent front face electrode comprising oxides of one or more metals, a layer of free metal on said front face electrode, said free metal layer comprising at least one of said one or more metals, said layer of free metal being substantially transparent to visible light, a thin film photovoltaic device on said free metal layer, and a back face electrode on said photovoltaic device.",
    "2. A solar cell according to claim 1 wherein said transparent front face electrode is supported on a transparent insulating substrate through which incident light may be received.",
    "3. A solar cell according to claim 1 wherein said transparent front face electrode comprises tin oxide.",
    "4. A solar cell according to claim 1 wherein said layer of free metal has a thickness of from 10 to 100 angstroms.",
    "5. In the method for manufacturing a thin film photovoltaic cell wherein a substrate having a transparent conductive layer of primarily tin oxide is positioned in a glow discharge chamber and semiconductor layers are deposited on said transparent conductive layer, the improvement comprising: before deposition of said semiconductor layers, treating said transparent conductive layer with a glow discharge atmosphere for a time sufficient to generate an essentially transparent layer of free tin on the surface of said transparent conductive layer.",
    "6. The improved method of claim 5 wherein said glow discharge atmosphere includes hydrogen gas.",
    "7. The improvement method of claim 5 wherein said glow discharge atmosphere includes only nonreactive gases.",
    "8. The improvement method of claim 7 wherein said glow discharge atmosphere comprises argon gas.",
    "9. In the method for manufacturing a thin film photovoltaic cell wherein a substrate having a transparent conductive layer of primarily tin oxide is positioned in a glow discharge chamber and semiconductor layers are deposited on said transparent conductive layer, the improvement comprising: after deposition of a first semiconductor layer, treating said substrate with a glow discharge including hydrogen gas for a time sufficient to generate an essentially transparent layer of free tin at the interface of said transparent conductive layer and said first semiconductor layer.",
    "10. A solar cell comprising: a transparent front face electrode comprising oxides of one or more metals, a layer of free metal on said front face electrode, said free metal layer formed by reduction of a portion of said front face electrode, said layer of free metal being substantially transparent to visible light, a thin film photovoltaic device on said free metal layer, and a back face electrode on said photovoltaic device.",
    "11. A solar cell according to claim 10 wherein said transparent front face electrode is supported on a transparent insulating substrate through which incident light may be received.",
    "12. A solar cell according to claim 10 wherein said transparent front face electrode comprises tin oxide.",
    "13. A solar cell according to claim 10 wherein said layer of free metal has a thickness of from 10 to 100 angstroms."
  ],
  "cpc": [
    "H10F 77/1692",
    "H10F 77/244",
    "Y02E 10/50"
  ],
  "assignees": [
    "ATLANTIC RICHFIELD CO"
  ],
  "filing_date": "1984-10-22",
  "publication_date": "1986-04-22",
  "grant_date": "1986-04-22",
  "priority_date": "1984-10-22",
  "application_number": "US-66364884-A",
  "family_id": "24662728",
  "citations": [
    "EP0025872A2",
    "JPS56114384A",
    "JPS5878473A",
    "JPS5892281A",
    "US3941672A",
    "US4330182A",
    "US4330182B1",
    "US4385200A",
    "US4387387A",
    "US4388482A",
    "US4410559A"
  ]
}

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