Patent · US6338872B1 · B1 · US
Film forming method
- (11) Publication number
- US6338872B1
- (21) Application number
- 09/337,557
- (22) Filing date
- 1999-06-22
- (30) Priority date
- 1995-08-28
- (43) Publication date
- 2002-01-15
- (45) Date of grant
- 2002-01-15
- (51) IPC
- C23C 16/24; C23C 16/44; C23C 16/511; C23C 16/54; H01L 31/20
- (52) CPC
- C23C Coating metallic material; coating material with metallic material; surface treatment of metallic material by diffusion into the surface, by chemical conversion or substitution; coating by vacuum evaporation, by sputtering, by ion implantation or by chemical vapour deposition, in general: 16/545, 16/24, 16/4401, 16/511
- H10F Inorganic semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation: 71/103, 71/1035, 71/107
- Y02E Reduction of greenhouse gas [ghg] emissions, related to energy generation, transmission or distribution: 10/50
- Y02P Climate change mitigation technologies in the production or processing of goods: 70/50
- (73) Assignee
- Canon Inc
- (72) Inventors
- Takehito Yoshino; Hiroshi Echizen; Masahiro Kanai; Hirokazu Otoshi; Atsushi Yasuno; Kohei Yoshida; Koichiro Moriyama; Masatoshi Tanaka
- (54) Title
- Film forming method
- (57) Abstract
A film forming method is described using an apparatus with a plurality of vacuum chambers which communicate with each other via a connection, where the apparatus has one or more detachable treatment rooms and where the method includes continuously forming a plurality of films on a band-shaped substrate within the treatment rooms, while continuously moving the substrate through the treatment rooms. The treatment rooms within said desired vacuum chambers are replaced after forming the film for a predetermined period as a part of the film forming method.
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Claims (2)
- A film forming method using an apparatus with a plurality of vacuum chambers in communication to each other via a connection, having internally a detachable treatment room including the steps of: forming continuously a plurality of films on a band-shaped substrate within the treatment rooms, while continuously moving said substrate through said treatment rooms; and replacing one or more treatment rooms by removing said treatment rooms within said desired vacuum chambers, and attaching another treatment room therefore, after said step of forming the film for a predetermined period.
- A film forming method using an apparatus with a plurality of vacuum chambers in communication to each other via a connection having a gate valve settable with a pressure difference between adjacent vacuum chambers, having internally a detachable treatment room, including the steps of: forming continuously a plurality of films on a band-like substrate within the treatment rooms, while continuously moving said substrate through said treatment rooms; and replacing said treatment rooms within said desired vacuum chambers in a state where only desired vacuum chambers are set at atmospheric pressure by closing predetermined gate valves, after said step of forming the film for a predetermined period.
Description
This application is a division of application Ser. No. 08/704,138, filed Aug. 28, 1996.
1. Field of the Invention
The present invention relates to a film forming apparatus and method for forming functional deposited films for photovoltaic elements or various kinds of sensors. More particularly, the invention relates to an improved film forming apparatus and method in which the maintenance time for continuous film formation such as a roll-to-roll film formation is shortened to enhance the working efficiency of the apparatus.
2. Related Background Art
A variety of semiconductor devices or electronic devices including photovoltaic elements or various kinds of sensors are provided with one or more functional deposited films on a substrate. In a manufacturing process of such devices, it is desired to form the deposited films as having certain level of characteristics continuously and efficiently to mass produce the products of superior characteristics.
For example, in a photovoltaic element such as a solar cell of the structure in which a plurality of semiconductor layers (i-layer, n-layer, p-layer) are laminated, various examinations for the stable film forming process have been made to enhance its function.
Citations (2)
- US4666734A
- US5266116A
Record as JSON
{
"publication_number": "US6338872B1",
"country": "US",
"kind": "B1",
"title": "Film forming method",
"abstract": "A film forming method is described using an apparatus with a plurality of vacuum chambers which communicate with each other via a connection, where the apparatus has one or more detachable treatment rooms and where the method includes continuously forming a plurality of films on a band-shaped substrate within the treatment rooms, while continuously moving the substrate through the treatment rooms. The treatment rooms within said desired vacuum chambers are replaced after forming the film for a predetermined period as a part of the film forming method.",
"claims": [
"1. A film forming method using an apparatus with a plurality of vacuum chambers in communication to each other via a connection, having internally a detachable treatment room including the steps of: forming continuously a plurality of films on a band-shaped substrate within the treatment rooms, while continuously moving said substrate through said treatment rooms; and replacing one or more treatment rooms by removing said treatment rooms within said desired vacuum chambers, and attaching another treatment room therefore, after said step of forming the film for a predetermined period.",
"2. A film forming method using an apparatus with a plurality of vacuum chambers in communication to each other via a connection having a gate valve settable with a pressure difference between adjacent vacuum chambers, having internally a detachable treatment room, including the steps of: forming continuously a plurality of films on a band-like substrate within the treatment rooms, while continuously moving said substrate through said treatment rooms; and replacing said treatment rooms within said desired vacuum chambers in a state where only desired vacuum chambers are set at atmospheric pressure by closing predetermined gate valves, after said step of forming the film for a predetermined period."
],
"description_excerpt": "This application is a division of application Ser. No. 08/704,138, filed Aug. 28, 1996.\n\n1. Field of the Invention\n\nThe present invention relates to a film forming apparatus and method for forming functional deposited films for photovoltaic elements or various kinds of sensors. More particularly, the invention relates to an improved film forming apparatus and method in which the maintenance time for continuous film formation such as a roll-to-roll film formation is shortened to enhance the working efficiency of the apparatus.\n\n2. Related Background Art\n\nA variety of semiconductor devices or electronic devices including photovoltaic elements or various kinds of sensors are provided with one or more functional deposited films on a substrate. In a manufacturing process of such devices, it is desired to form the deposited films as having certain level of characteristics continuously and efficiently to mass produce the products of superior characteristics.\n\nFor example, in a photovoltaic element such as a solar cell of the structure in which a plurality of semiconductor layers (i-layer, n-layer, p-layer) are laminated, various examinations for the stable film forming process have been made to enhance its function.",
"cpc": [
"C23C 16/545",
"C23C 16/24",
"C23C 16/4401",
"C23C 16/511",
"H10F 71/103",
"H10F 71/1035",
"H10F 71/107",
"Y02E 10/50",
"Y02P 70/50"
],
"ipc": [
"C23C 16/24",
"C23C 16/44",
"C23C 16/511",
"C23C 16/54",
"H01L 31/20"
],
"assignees": [
"Canon Inc"
],
"inventors": [
"Takehito Yoshino",
"Hiroshi Echizen",
"Masahiro Kanai",
"Hirokazu Otoshi",
"Atsushi Yasuno",
"Kohei Yoshida",
"Koichiro Moriyama",
"Masatoshi Tanaka"
],
"filing_date": "1999-06-22",
"publication_date": "2002-01-15",
"grant_date": "2002-01-15",
"priority_date": "1995-08-28",
"application_number": "US-33755799-A",
"family_id": "27284116",
"cited_by_count": 29,
"citations": [
"US4666734A",
"US5266116A"
]
}
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