Chemical Etching
Term · Environment · MLC-T-ENV-004751
1. Any step in the chemical milling or etching processes in which metal is chemically or electrochemically removed from the work piece and which is followed by a rinse; this includes related metal cleaning operations which preceded chemical milling or etching, when each operation is followed by a rinse.
2. In the context of semiconductor manufacturing, a process type that uses plasma-generated fluorine atoms and other reactive fluorine-containing fragments that chemically react with exposed thin films ( e.g., dielectric, metals) or substrate ( e.g., silicon) to selectively remove portions of material. This includes semiconductor production processes using fluorinated GHG reagents to clean wafers.
| Identifier | MLC-T-ENV-004751 |
|---|---|
| Field | Environment |
| References | 40 CFR 413.61 (CFR 2017); 40 CFR 84.3 (CFR 2022) |
Record as JSON
{
"id": "MLC-T-ENV-004751",
"term": "Chemical Etching",
"field": "Environment",
"definition": "1. Any step in the chemical milling or etching processes in which metal is chemically or electrochemically removed from the work piece and which is followed by a rinse; this includes related metal cleaning operations which preceded chemical milling or etching, when each operation is followed by a rinse.\n\n2. In the context of semiconductor manufacturing, a process type that uses plasma-generated fluorine atoms and other reactive fluorine-containing fragments that chemically react with exposed thin films ( e.g., dielectric, metals) or substrate ( e.g., silicon) to selectively remove portions of material. This includes semiconductor production processes using fluorinated GHG reagents to clean wafers.",
"references": [
"40 CFR 413.61 (CFR 2017)",
"40 CFR 84.3 (CFR 2022)"
],
"url": "https://mlchart.com/terminology/environment/chemical-etching/"
}
Record 4,751 of 30,736 in Environment terminology (MLC-0121). Request the full dataset.