MLchartDataset catalogue

Chemical Etching

Term · Environment · MLC-T-ENV-004751

1. Any step in the chemical milling or etching processes in which metal is chemically or electrochemically removed from the work piece and which is followed by a rinse; this includes related metal cleaning operations which preceded chemical milling or etching, when each operation is followed by a rinse.

2. In the context of semiconductor manufacturing, a process type that uses plasma-generated fluorine atoms and other reactive fluorine-containing fragments that chemically react with exposed thin films ( e.g., dielectric, metals) or substrate ( e.g., silicon) to selectively remove portions of material. This includes semiconductor production processes using fluorinated GHG reagents to clean wafers.

Table 1. Record
IdentifierMLC-T-ENV-004751
FieldEnvironment
References40 CFR 413.61 (CFR 2017); 40 CFR 84.3 (CFR 2022)
Record as JSON
{
  "id": "MLC-T-ENV-004751",
  "term": "Chemical Etching",
  "field": "Environment",
  "definition": "1. Any step in the chemical milling or etching processes in which metal is chemically or electrochemically removed from the work piece and which is followed by a rinse; this includes related metal cleaning operations which preceded chemical milling or etching, when each operation is followed by a rinse.\n\n2. In the context of semiconductor manufacturing, a process type that uses plasma-generated fluorine atoms and other reactive fluorine-containing fragments that chemically react with exposed thin films ( e.g., dielectric, metals) or substrate ( e.g., silicon) to selectively remove portions of material. This includes semiconductor production processes using fluorinated GHG reagents to clean wafers.",
  "references": [
    "40 CFR 413.61 (CFR 2017)",
    "40 CFR 84.3 (CFR 2022)"
  ],
  "url": "https://mlchart.com/terminology/environment/chemical-etching/"
}

Record 4,751 of 30,736 in Environment terminology (MLC-0121). Request the full dataset.