Plasma Etching

{
  "id": "MLC-T-ENV-021204",
  "term": "Plasma Etching",
  "field": "Environment",
  "definition": "Process type that consists of any production process using fluorinated GHG reagents to selectively remove materials from a substrate during electronics manufacturing. The materials removed may include SiO2, SiOX-based or fully organic-based thin-film material, SiN, SiON, Si3N4, SiC, SiCO, SiCN, etc. (represented by the general chemical formula, SiwOXNyXz where w, x, y and z are zero or integers and X may be some other element such as carbon), substrate, or metal films (such as aluminum or tungsten).",
  "references": [
    "40 CFR 98.98 (CFR 2013)"
  ],
  "url": "https://mlchart.com/terminology/environment/plasma-etching/"
}