Method of sequential cleaning and passivating a GaAs substrate using remote oxygen plasma

{
  "publication_number": "US4877757A",
  "country": "US",
  "kind": "A",
  "title": "Method of sequential cleaning and passivating a GaAs substrate using remote oxygen plasma",
  "abstract": "A processing apparatus and method for depositing a passivating layer on a mercury-cadmium-telluride wafer utilizing a single process chamber to provide oxygen gas to the chamber with the excitation energy being provided by a remotely generated plasma in order to remove any organic residue and then supplying either a sulfide or selenide gas in combination with illuminating the wafer with an in situ generated ultraviolet energy to produce a passivating layer.",
  "claims": [
    "1. A method for sequential cleaning and passivating a mercury-cadmium-telluride wafer with sulfide in a single process chamber, comprising: (a) disposing said wafer in a process chamber within a process module at low pressure; (b) generating a remote plasma from oxygen gas; and (c) introducing the remote plasma within said chamber and to the face of the wafer for an appropriate time period; (d) introducing a sulfide gas into the chamber and to the face of the wafer for an appropriate time period; and (e) illuminating said sulfide gas within said chamber with additional Ultraviolet light produced within said module.",
    "2. The process as set forth in claim 1 including the step of purging said chamber with oxygen gas after disposing said wafer.",
    "3. The process as set forth in claim 1 including the step of purging said chamber with nitrogen gas after illuminating said sulfide gas.",
    "4. A method for passivating a mercury-cadmium-telluride wafer with selenide comprising: (a) disposing a wafer in a process chamber within a process module at low pressure; (b) generating a remote plasma from oxygen gas; (c) introducing the remote plasma into said chamber and to the face of the wafer for an appropriate time period; (d) introducing a selenide gas within the chamber and to the face of the wafer for an appropriate time period; and (e) illuminating said selenide gas within said chamber with additional Ultraviolet light produced within said module.",
    "5. The process as set forth in claim 4 including the step of purging said chamber with oxygen gas after disposing said wafer.",
    "6. The process as set forth in claim 4 including the step of purging said chamber with nitrogen gas after illuminating said sulfide gas.",
    "7. A method for sequential cleaning and passivating a mercury-cadmium-telluride film with sulfide in a single processing chamber, comprising the steps of: (a) generating free radicals from an oxygen containing gas in a plasma generator remote from the processing chamber; and (b) introducing the free radicals to said chamber and to the face of the wafer for an appropriate time period; and (c) introducing a sulfur containing gas to the chamber and to the face of the wafer for an appropriate time period.",
    "8. The method as set forth in claim 7 including the step of illuminating said sulfur containing gas within said chamber with additional ultraviolet light produced within said module.",
    "9. The method as set forth in claim 7 including the step of purging said chamber with oxygen gas after disposing said wafer.",
    "10. The method as set forth in claim 7 including the stp of purging said chamber with nitrogen gas after illuminating said sulfide gas."
  ],
  "description_excerpt": "This application is a continuation of application Ser. No. 074,386, filed 07/16/87, now abandoned.\n\nThe present application incorporates by reference each of the following applications which are related cases of a common assignee and contain related subject matter:\n\nU.S. Pat. No. 4,687,542, issued Aug. 18, 1987, entitled Vacuum Processing System by Davis, Cecil; Matthews, Robert; and Hildenband, Randall;\n\nSer. No. 790,707, filed 10/24/85, pending, for Plasma-Assisted Etching by Davis, Cecil; Carter, Duane; and Jucha, Rhett;\n\nSer. No. 915,608, filed 10/06/86, pending, Particle Shield by Bowling, Robert; Larrabee, Graydon; and Liu, Benjamin;\n\nSer. No. 074,448, filed 7/16/87, pending, entitled Processing Apparatus and Method; by Davis, Cecil; Matthews, Robert; Loewenstein, Lee; Abernathy, Joe; and Wooldridge, Timothy;\n\nSer. No. 075,016, filed 7/16/87, pending, entitled Processing Apparatus and Method; by Davis, Cecil; Loewenstein, Lee; Matthews, Robert; and Jones, John;\n\nSer. No. 073,943, filed 7/16/87, pending, entitled Processing Apparatus and Method; by Loewenstein, Lee; Rose, Alan; Kennedy, Robert III; Huffman, Craig; and Davis, Cecil;\n\nSer. No. 073,948, filed 7/16/87, pending, entitled Processing Apparatus and Method; by Loewenstein, Lee;\n\nSer. No. 073,942, filed 7/16/87, pending, entitled Processing Apparatus and Method; by Jucha, Rhett; and Davis, Cecil;\n\nSer. No. 074,419, filed 7/16/87, pending, entitled Processing Apparatus and Method; by Davis, Cecil; and Matthews, Robert;",
  "cpc": [
    "H10P 72/0406",
    "H10P 14/69",
    "H10P 50/20",
    "H10P 52/00",
    "H10P 95/70",
    "Y10S 148/017",
    "Y10S 148/021",
    "Y10S 148/056"
  ],
  "ipc": [
    "H10P 95/00"
  ],
  "assignees": [
    "Texas Instruments Inc"
  ],
  "inventors": [
    "Rudy L. York",
    "Joseph D. Luttmer",
    "Patricia B. Smith",
    "Cecil J. Davis"
  ],
  "filing_date": "1988-12-07",
  "publication_date": "1989-10-31",
  "grant_date": "1989-10-31",
  "priority_date": "1987-07-16",
  "application_number": "US-28292788-A",
  "family_id": "26755596",
  "cited_by_count": 83,
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}