Patent · US9434150B2 · B2 · US

Apparatus and methods for micro-transfer-printing

(11) Publication number

US9434150B2

(21) Application number

14/803,997

(22) Filing date

2015-07-20

(30) Priority date

2014-07-20

(43) Publication date

2016-09-06

(45) Date of grant

2016-09-06

(51) IPC

B25J 15/00; B41F 16/00; B41K 3/12; H01L 21/30; H01L 21/3065; H01L 21/52; H01L 21/56; H01L 21/67; H01L 21/683; H01L 23/00; H01L 23/29; H01L 23/31; H01L 25/00; H01L 31/18

(52) CPC

B41F Printing machines or presses: 16/00, 16/0046, 16/006, 16/0073
B25J Manipulators; chambers provided with manipulation devices: 15/00
B41K Stamps; stamping or numbering apparatus or devices: 3/04, 3/12
H01L Semiconductor devices; electric solid state devices not otherwise provided for: 21/3065, 21/52, 21/565, 21/568, 21/67103, 21/683, 21/6835, 2221/68318, 2221/68354, 2221/68368, 2221/68377, 2221/68381, 2224/32225, 2224/32245, 2224/75315, 2224/7598, 2224/83001, 2224/83011, 2224/83013, 2224/83024, 2224/832, 2224/83894, 2224/83895, 23/293, 23/3171, 24/75, 24/83, 25/50, 2924/10253, 2924/1032, 2924/10328, 2924/10329, 2924/10332, 2924/10335, 2924/10336, 2924/10337, 2924/10338, 2924/1034, 31/1892
H10F Inorganic semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation: 71/139
H10P Generic processes or apparatus for the manufacture or treatment of devices covered by class H10: 50/242, 72/0432, 72/70, 72/74, 72/7412, 72/7428, 72/7434, 72/7438, 72/744
H10W Generic packages, interconnections, connectors or other constructional details of devices covered by class H10: 72/013, 72/01371, 72/0198, 72/071, 72/0711, 72/07141, 72/07304, 72/07311, 72/07331, 74/016, 74/019, 74/137, 74/47, 90/00, 90/734, 90/736

(73) Assignee

X Celeprint Ltd

(72) Inventors

Christopher Bower; Matthew Meitl; David Gomez; Salvatore Bonafede; David Kneeburg

(54) Title

Apparatus and methods for micro-transfer-printing

(57) Abstract

In an aspect, a system and method for assembling a semiconductor device on a receiving surface of a destination substrate is disclosed. In another aspect, a system and method for assembling a semiconductor device on a destination substrate with topographic features is disclosed. In another aspect, a gravity-assisted separation system and method for printing semiconductor device is disclosed. In another aspect, various features of a transfer device for printing semiconductor devices are disclosed.

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Claims (18)

A method for assembling a semiconductor device on a receiving surface of a destination substrate by micro-transfer printing, the method comprising: Providing the semiconductor device formed on a native substrate; contacting a top surface of the semiconductor device with a conformable transfer device having a contact surface, wherein contact between the contact surface and the top surface of the semiconductor device at least temporarily binds the semiconductor device to the conformable transfer device; separating the semiconductor device from the native substrate such that the contact surface of the conformable transfer device has the semiconductor device disposed thereon with the semiconductor device released from the native substrate; prior to contacting the semiconductor device with the receiving surface of the destination substrate, exposing a backside surface of the semiconductor device to a plasma including atmospheric plasma following separation from the native substrate; contacting the semiconductor device disposed on the contact surface with the receiving surface of the destination substrate; and separating the contact surface of the conformable transfer device from the semiconductor device, thereby micro-transfer printing assembling the semiconductor device onto on the receiving surface of the destination substrate, wherein the semiconductor device is micro-transfer printed onto the receiving surface of the destination substrate such that a metal backside surface of the semiconductor device at least partially contacts a flux layer on the destination substrate; and after assembling the semiconductor device on the receiving surface of the destination substrate, thermally treating the flux layer, thereby securing the metal backside surface to the metal pad.
The method of claim 1, wherein exposing the backside surface to plasma improves bonding between the semiconductor device and the receiving substrate of the destination substrate.
The method of claim 1, wherein exposing the backside surface to plasma cleans the backside surface of the semiconductor device.
The method of claim 1, wherein exposing the backside surface to plasma removes thin layers of oxides from the backside surface of the semiconductor device.
The method of claim 1, wherein the destination substrate is a member selected from the group consisting of polymer, plastic, resin, polyimide, PEN, PET, metal, metal foil, glass, a semiconductor, and sapphire.
The method of claim 1, wherein the destination substrate has a transparency greater than or equal to 50%, 80%, 90%, or 95% for visible light.
The method of claim 1, wherein the native substrate comprises a member selected form the group consisting of inorganic semiconductor material, single crystalline silicon wafers, silicon on insulator wafers, polycrystalline silicon wafers, GaAs wafers, Si (1 1 1), InAlP, InP, GaAs, InGaAs, AlGaAs, GaSb, GaAlSb, AlSb, InSb, InGaAlSbAs, InAlSb, and InGaP.
The method of claim 1, wherein the plasma comprises a reducing gas.
The method of claim 1, comprising controlling at least one of a duty cycle, residence time, power of the plasma, and distance of the plasma to the semiconductor device to prevent shearing and delamination of the semiconductor devices from the contacting surface of the conformable transfer device.
The method of claim 1, comprising: prior to contacting the semiconductor device disposed on the contact surface with the receiving surface of the destination substrate, separating the conformable transfer device from the native substrate, thereby picking up the semiconductor device from the native substrate.
The method of claim 10, wherein separating the conformable transfer device from the native substrate is performed with an initial acceleration of no less than 5 g (e.g., 5-100 g).
The method of claim 1, wherein said separating the conformable transfer device from the native substrate comprises one or both of the following: (i) moving the conformable transfer device away from the native substrate; and (ii) moving the native substrate away from the conformable transfer device.
The method of claim 1, comprising, after contacting the semiconductor device disposed on the contact surface with the receiving surface of the destination substrate, heating, by a heating element, the polymer layer.
The method of claim 1, comprising: after providing the semiconductor device formed on a native substrate, etching at least a portion of a release layer formed between the semiconductor device and the native substrate.
The method of claim 1, wherein the semiconductor device comprises a unitary inorganic semiconductor structure.
The method of claim 1, wherein the semiconductor device comprises an encapsulating polymer layer.
The method of claim 1, wherein the conformable transfer device comprises one or more anti-sag posts of the same height as the a plurality of transfer posts, each anti-sag post located between at least two posts of the plurality of posts.
The method of claim 1, wherein the semiconductor device has a polymer layer disposed on a top surface of the semiconductor device.

Description

This application claims priority to and the benefit of U.S. Provisional Patent Application No. 62/026,694, filed Jul. 20, 2014, entitled “Apparatus and Method for Micro-Transfer Printing” and U.S. Provisional Patent Application No. 62/027,166, filed Jul. 21, 2014, entitled “Methods and Tools for Micro-Transfer Printing,” the contents of each of which is incorporated by reference herein in its entirety.

The present invention relates to methods and tools for micro-transfer-printing printable devices to destination substrates.

The disclosed technology relates generally to methods and tools for micro-transfer-printing. It is often difficult to pick up and place ultra-thin and/or small devices using this technology. Micro transfer printing permits the selection and application of these ultra-thin, fragile, and/or small devices without causing damage to the devices themselves.

Micro-transfer-printing allows for deterministically assembling and integrating arrays of micro-scale, high-performance devices onto non-native substrates. In its simplest embodiment, micro-transfer-printing is analogous to using a rubber stamp to transfer liquid-based inks from an ink-pad onto paper. However, in micro-transfer-printing the “inks” are composed of high-performance solid-state semiconductor devices and the “paper” can be substrates, including plastics and other semiconductors. The micro-transfer-printing process leverages engineered elastomer stamps coupled with high-precision motion-controlled print-heads to selectively pick-up and print large arrays of micro-scale devices onto non-native destination substrates.

Citations (108)

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Record as JSON

{
  "publication_number": "US9434150B2",
  "country": "US",
  "kind": "B2",
  "title": "Apparatus and methods for micro-transfer-printing",
  "abstract": "In an aspect, a system and method for assembling a semiconductor device on a receiving surface of a destination substrate is disclosed. In another aspect, a system and method for assembling a semiconductor device on a destination substrate with topographic features is disclosed. In another aspect, a gravity-assisted separation system and method for printing semiconductor device is disclosed. In another aspect, various features of a transfer device for printing semiconductor devices are disclosed.",
  "claims": [
    "1. A method for assembling a semiconductor device on a receiving surface of a destination substrate by micro-transfer printing, the method comprising: Providing the semiconductor device formed on a native substrate; contacting a top surface of the semiconductor device with a conformable transfer device having a contact surface, wherein contact between the contact surface and the top surface of the semiconductor device at least temporarily binds the semiconductor device to the conformable transfer device; separating the semiconductor device from the native substrate such that the contact surface of the conformable transfer device has the semiconductor device disposed thereon with the semiconductor device released from the native substrate; prior to contacting the semiconductor device with the receiving surface of the destination substrate, exposing a backside surface of the semiconductor device to a plasma including atmospheric plasma following separation from the native substrate; contacting the semiconductor device disposed on the contact surface with the receiving surface of the destination substrate; and separating the contact surface of the conformable transfer device from the semiconductor device, thereby micro-transfer printing assembling the semiconductor device onto on the receiving surface of the destination substrate, wherein the semiconductor device is micro-transfer printed onto the receiving surface of the destination substrate such that a metal backside surface of the semiconductor device at least partially contacts a flux layer on the destination substrate; and after assembling the semiconductor device on the receiving surface of the destination substrate, thermally treating the flux layer, thereby securing the metal backside surface to the metal pad.",
    "2. The method of claim 1, wherein exposing the backside surface to plasma improves bonding between the semiconductor device and the receiving substrate of the destination substrate.",
    "3. The method of claim 1, wherein exposing the backside surface to plasma cleans the backside surface of the semiconductor device.",
    "4. The method of claim 1, wherein exposing the backside surface to plasma removes thin layers of oxides from the backside surface of the semiconductor device.",
    "5. The method of claim 1, wherein the destination substrate is a member selected from the group consisting of polymer, plastic, resin, polyimide, PEN, PET, metal, metal foil, glass, a semiconductor, and sapphire.",
    "6. The method of claim 1, wherein the destination substrate has a transparency greater than or equal to 50%, 80%, 90%, or 95% for visible light.",
    "7. The method of claim 1, wherein the native substrate comprises a member selected form the group consisting of inorganic semiconductor material, single crystalline silicon wafers, silicon on insulator wafers, polycrystalline silicon wafers, GaAs wafers, Si (1 1 1), InAlP, InP, GaAs, InGaAs, AlGaAs, GaSb, GaAlSb, AlSb, InSb, InGaAlSbAs, InAlSb, and InGaP.",
    "8. The method of claim 1, wherein the plasma comprises a reducing gas.",
    "9. The method of claim 1, comprising controlling at least one of a duty cycle, residence time, power of the plasma, and distance of the plasma to the semiconductor device to prevent shearing and delamination of the semiconductor devices from the contacting surface of the conformable transfer device.",
    "10. The method of claim 1, comprising: prior to contacting the semiconductor device disposed on the contact surface with the receiving surface of the destination substrate, separating the conformable transfer device from the native substrate, thereby picking up the semiconductor device from the native substrate.",
    "11. The method of claim 10, wherein separating the conformable transfer device from the native substrate is performed with an initial acceleration of no less than 5 g (e.g., 5-100 g).",
    "12. The method of claim 1, wherein said separating the conformable transfer device from the native substrate comprises one or both of the following: (i) moving the conformable transfer device away from the native substrate; and (ii) moving the native substrate away from the conformable transfer device.",
    "13. The method of claim 1, comprising, after contacting the semiconductor device disposed on the contact surface with the receiving surface of the destination substrate, heating, by a heating element, the polymer layer.",
    "14. The method of claim 1, comprising: after providing the semiconductor device formed on a native substrate, etching at least a portion of a release layer formed between the semiconductor device and the native substrate.",
    "15. The method of claim 1, wherein the semiconductor device comprises a unitary inorganic semiconductor structure.",
    "16. The method of claim 1, wherein the semiconductor device comprises an encapsulating polymer layer.",
    "17. The method of claim 1, wherein the conformable transfer device comprises one or more anti-sag posts of the same height as the a plurality of transfer posts, each anti-sag post located between at least two posts of the plurality of posts.",
    "18. The method of claim 1, wherein the semiconductor device has a polymer layer disposed on a top surface of the semiconductor device."
  ],
  "description_excerpt": "This application claims priority to and the benefit of U.S. Provisional Patent Application No. 62/026,694, filed Jul. 20, 2014, entitled “Apparatus and Method for Micro-Transfer Printing” and U.S. Provisional Patent Application No. 62/027,166, filed Jul. 21, 2014, entitled “Methods and Tools for Micro-Transfer Printing,” the contents of each of which is incorporated by reference herein in its entirety.\n\nThe present invention relates to methods and tools for micro-transfer-printing printable devices to destination substrates.\n\nThe disclosed technology relates generally to methods and tools for micro-transfer-printing. It is often difficult to pick up and place ultra-thin and/or small devices using this technology. Micro transfer printing permits the selection and application of these ultra-thin, fragile, and/or small devices without causing damage to the devices themselves.\n\nMicro-transfer-printing allows for deterministically assembling and integrating arrays of micro-scale, high-performance devices onto non-native substrates. In its simplest embodiment, micro-transfer-printing is analogous to using a rubber stamp to transfer liquid-based inks from an ink-pad onto paper. However, in micro-transfer-printing the “inks” are composed of high-performance solid-state semiconductor devices and the “paper” can be substrates, including plastics and other semiconductors. The micro-transfer-printing process leverages engineered elastomer stamps coupled with high-precision motion-controlled print-heads to selectively pick-up and print large arrays of micro-scale devices onto non-native destination substrates.",
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  "assignees": [
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  "inventors": [
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  "filing_date": "2015-07-20",
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  "priority_date": "2014-07-20",
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