Use of alkoxy N-hydroxyalkyl alkanamide as resist removing agent, composition for removing resist, method for preparing the same and resist removing method using the same

{
  "publication_number": "US6398874B2",
  "country": "US",
  "kind": "B2",
  "title": "Use of alkoxy N-hydroxyalkyl alkanamide as resist removing agent, composition for removing resist, method for preparing the same and resist removing method using the same",
  "abstract": "A resist removing agent and a resist removing composition, having an excellent capability for removing a resist and polymer and which does not attack underlying layers, a method for preparing the same and a resist removing method using the same. The resist removing agent includes alkoxy N-hydroxyalkyl alkanamide. The resist removing composition includes alkoxy N-hydroxyalkyl alkanamide, and at least one compound selected from a group consisting of a polar material having a dipole moment of 3 or greater, an attack inhibitor and alkanolamine. A substrate having the resist thereon is brought into contact with the resist removing agent or resist removing composition to remove the resist.",
  "claims": [
    "1. A resist removing method comprising: providing a substrate; forming a resist on the substrate; and contacting the substrate with a resist removing agent comprising alkoxy N-hydroxyalkyl alkanamide to remove the resist from the substrate.",
    "2. The resist removing method according to claim 1, wherein the alkoxy N-hydroxyalkyl alkanamide is of the formula (I): R 4 - O - R 3 - CO - N - R 1 R 2 OH wherein: R 1 is a hydrogen atom, a C 1 to C 5 hydrocarbon, or an aromatic hydrocarbon having 1 to 3 rings, R 2 is a C 1 to C 5 hydrocarbon or an aromatic hydrocarbon having 1 to 3 rings, and R 3 and R 4 are, independently, a C 1 to C 5 hydrocarbon.",
    "3. The resist removing method according to claim 2, wherein R 1 is hydrogen, R 2 is - CH 2 CH 2 -, R 3 is - CH 2 CH 2 -, and R 4 is - CH 3.",
    "4. A resist removing method comprising: providing a substrate; forming a resist on the substrate; and contacting the substrate with a resist removing composition to remove the resist from the substrate, the resist removing composition comprising alkoxy N-hydroxyalkyl alkanamide, and at least one compound selected from a group consisting of a polar material having a dipole moment of 3 or greater, an attack inhibitor, and alkanolamine.",
    "5. The method according to claim 4, wherein, during said contacting, the alkoxy N-hydroxyalkyl alkanamide is of the formula (I): R 4 - O - R 3 - CO - N - R 1 R 2 OH (I) wherein: R 1 is a hydrogen atom, a C 1 to C 5 hydrocarbon, or an aromatic hydrocarbon having 1 to 3 rings, R 2 is a C 1 to C 5 hydrocarbon or an aromatic hydrocarbon having 1 to 3 rings, and R 3 and R 4 are, independently, a C 1 to C 5 hydrocarbon.",
    "6. The method according to claim 4, wherein, during said contacting, the polar material is one selected from a group consisting of water, methanol and dimethylsulfoxide.",
    "7. The method according to claim 4, wherein, during said contacting, the attack inhibitor is a compound represented by formula (II): R 6 - (OH) n (II) wherein: R 6 is a C 1 to C 5 hydrocarbon, a C 1 to C 5 hydrocarbon having a - COOH group, an aromatic hydrocarbon having 1 to 3 rings, or an aromatic hydrocarbon having 1 to 3 rings having a - COOH group; and n is an integer from 1 to 4.",
    "8. The mlethod according to claim 4, wherein, during said contacting, the alkanolamine is of the following formula (II): R 1 - NH - R 2 OH (III) wherein: R 1 is hydrogen, a C 1 to C 5 hydrocarbon, or an aromatic hydrocarbon having 1 to 3 rings; and R 2 is a C 1 to C 5 hydrocarbon or an aromatic hydrocarbon having 1 to 3 rings.",
    "9. The method according to claim 4, wherein, during said contacting, the alkoxy N-hydroxyalkyl alkanamide is in a range from about 30 to about 99.9 weight % of the resist removing composition.",
    "10. The emthod according to claim 4, wherein, during said contacting, the polar material and the attack inhibitor are, independently, in a range from about 0.01 to about 30 weight % of the resist removing composition.",
    "11. The method according to claim 4, wherein, during said contacting, the alkanolamine is in a range from about 0.1 to about 70 weight % of the resist removing composition.",
    "12. The method according to claim 4, wherein, during said contacting, the alkoxy N-hydroxyalkyl alkanamide, the alkanolamine, the polar material and the attack inhibitor are in a range from about 40 to about 65 weight % of the resist removing composition, in a range from about 5 to about 30 weight % of the resist removing composition, in a range from about 5 to about 20 weight % of the resist removing composition, and in a range from about 5 to about 20 weight % of the resist removing composition, respectively.",
    "13. The method according to claim 4, after said contacting, further comprising: rising the substrate; and drying the substrate.",
    "14. The method according to claim 4, before said contacting, further comprising ashing the substrate.",
    "15. The method according to claim 4, wherein said contacting is performed at a temperature in a range from about 45° C. to about 70° C."
  ],
  "description_excerpt": "This application is a divisional of application Ser. No. 09/348,829 filed Jul. 8, 1999 U.S. Pat. No. 6,274,537, (which in turn is a continuation-in-part (CIP) of application Ser. Nos. 09/140,334 and 09/140,333 now abandoned; both filed Aug. 26, 1998 and assigned to the assignee of the present application, each disclosure of which is incorporated herein by reference in its entirety.\n\n1. Field of the Invention\n\nThe present invention relates to a resist removing agent, a composition for removing resist, a method for preparing the same and a resist removing method using the same. In particular, the present invention relates to use of an alkoxy N-hydroxyalkyl alkanamide as a resist removing agent, a composition for removing resist, a method for preparing the same, and a resist removing method using the same.\n\n2. Description of the Related Art\n\nThe resist removing process is a major process in preparing a semiconductor device. After various processes for preparing a semiconductor device, e.g., an etching process (dry or wet) or an ion implantation process, a resist pattern used as a mask must be removed. Also, in the case when the resist pattern is misaligned, it must be removed to form a new resist pattern. In particular, various different material layers, e.g., an oxide layer, an aluminum layer, a copper layer, a polysilicon layer, a silicide layer or a polyimide layer, may be present under a resist layer to be removed. Therefore, an important consideration for a resist removing process is to remove a resist completely, as quickly as possible, and without attacking underlying layers.",
  "cpc": [
    "G03F 7/425"
  ],
  "ipc": [
    "G03F 7/42"
  ],
  "assignees": [
    "Samsung Electronics Co Ltd"
  ],
  "inventors": [
    "Dong-jin Park",
    "Jin-ho Hwang",
    "June-ing Gil",
    "Je-eung Park",
    "Sang-mun Chon"
  ],
  "filing_date": "2001-06-21",
  "publication_date": "2002-06-04",
  "grant_date": "2002-06-04",
  "priority_date": "1998-08-05",
  "application_number": "US-88499201-A",
  "family_id": "27532279",
  "cited_by_count": 11,
  "citations": [
    "GB2199587A",
    "JPH02131239A",
    "US5707947A",
    "JPH11125917A",
    "GB2340256A",
    "US6274537B1"
  ]
}